KR101556492B1 - 회로캐리어의 배치방법과 회로캐리어 - Google Patents

회로캐리어의 배치방법과 회로캐리어 Download PDF

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KR101556492B1
KR101556492B1 KR1020147035661A KR20147035661A KR101556492B1 KR 101556492 B1 KR101556492 B1 KR 101556492B1 KR 1020147035661 A KR1020147035661 A KR 1020147035661A KR 20147035661 A KR20147035661 A KR 20147035661A KR 101556492 B1 KR101556492 B1 KR 101556492B1
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led
smd
circuit carrier
light emitting
reference point
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KR1020147035661A
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KR20150013850A (ko
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안드레아스 카르히
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아베 미크로엘렉트로닉 게젤샤프트 미트 베슈렝크터 하프퉁
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Abstract

본 발명은 적어도 하나의 표면실장형 LED(SMD-LED)(2)가 회로캐리어(1)에서 회로캐리어(1)의 하나 이상의 기준점(3)에 대하여 배향되게 배치되는, 상기 적어도 하나의 SMD-LED가 구비된 회로캐리어(1)의 제조를 위한 방법으로서, 적어도 하나의 SMD-LED(2)의 발광영역(4)의 위치가 SMD-LED(2)에서 광학적으로 검출되고 적어도 하나의 SMD-LED(2)가 적어도 하나의 SMD-LED(2)의 발광영역(4)의 검출된 위치에 따라 회로캐리어(1)에 취부되는 회로캐리어의 제조방법에 관한 것이고, 이러한 회로캐리어(1)에 관한 것이다.

Description

회로캐리어의 배치방법과 회로캐리어 {PLACEMENT METHOD FOR CIRCUIT CARRIER AND CIRCUIT CARRIER}
본 발명은 청구범위 제1항의 특징부를 갖는 적어도 하나의 표면실장형 LED(surface-mount LED: SMD-LED)가 구비된 회로캐리어의 제조를 위한 방법과 청구범위 제10항의 특징부를 갖는 회로캐리어에 관한 것이다.
표면실장형 LED(SMD-LED) 소자에 기초하는 광-광학(light-optical)의 적용을 구현하기 위하여, 회로캐리어에 SMD-LED 소자를 고도로 정밀하게 취부하는 것이 요구된다. 이러한 예로서는 광원이 LED인 차량의 전면헤드라이트, 주간주행등, 방향지시등, 액티브 벤딩 라이트(active bending light) 등이 있다.
이와 같은 경우, SMD-LED는 회로캐리어에서 하나 이상의 정의된 기준점에 정확히 취부되어야 하며, 광학계[어태치먼트 렌즈(attachment lens)를 예로 들 수 있다]는 이들 기준점에 대하여 정확한 방향을 향하도록 정확히 배향(配向)될 수 있다.
지금까지 SMD-LED 소자는 소위 "픽 앤 플레이스(Pick & Place)" 방법으로 회로캐리어상에 배치되었고 "리플로(Reflow)" 방법으로 납땜되었다. 이와 같은 경우, LED의 발광영역의 최종위치는 다음의 요인에 의하여 결정된다: - LED 소자의 공차(예를 들어, LED 외형 또는 LED 단자패드의 위치에 대한 발광영역의 위치), - 솔더링 패드(soldering pad)의 위치를 결정하는 회로캐리어의 공차[예를 들어, 회로캐리어의 외형 및/또는 통공에 대한 도체트랙(conductor track)의 위치, 도체트랙 위치에 대한 솔더 마스크(solder mask)의 위치], 및 - 예열영역에서 솔더 페이스트(solder paste)의 "슬럼핑(slumping)" 현상과 용융되었을 때 상부영역(peak zone)에서 솔더의 습윤력(부동상승)에 의한 리플로 솔더링방법에서 SMD-LED의 이동.
SMD-LED 소자의 발광영역에 대하여 이러한 방법으로 얻을 수 있는 배치정확도의 최종레벨은 오로지 SMD-LED와 회로캐리어의 공차만 고려할 때 이미 +/- 110㎛ 이상이다(아직은 리플로 솔더링방법의 영향은 고려하지 않았다).
리플로 솔더링방법의 영향은 특히 SMD-LED 소자에 대하여 각지고 경사진 위치상의 정확성(positional truth)의 영역에서 부가적인 배치 부정확성을 야기한다.
현재의 은소결방법(silver sintering processes)으로 SMD-LED를 취부하는 것은 이러한 방법이 10초 이상의 허용할 수 없는 긴 공정시간이 소요되기 때문에 배제된다.
본 발명의 목적은 상기 언급된 일반적인 유형의 방법을 제공하는 바, 이러한 방법에서 SMD-LED와 회로캐리어의 필연적으로 존재하는 공차가 보정될 수 있고, 특히 회로캐리어상에 SMD-LED의 배치와 취부에 고도의 정확도를 얻을 수 있으며 이와 같이 구비된 회로캐리어를 제공할 수 있도록 하는데 있다.
이러한 본 발명의 목적은 청구범위 제1항의 특징부를 갖는 방법과 청구범위 제10항의 특징부를 갖는 회로캐리어에 의하여 달성된다.
SMD-LED의 발광영역의 위치에 따라서 회로캐리어에 적어도 하나의 SMD-LED를 취부함으로써 LED 소자와 회로캐리어의 공차에 기인하는 이들의 부정확도를 배제하는 것이 가능하다. 이와 같이 함으로써 회로캐리어에 SMD-LED를 배치할 때 +/- 100 ㎛ 이하의 공차를 달성하는 것이 가능하다. 출원인의 시험결과는 +/- 50 ㎛ 보다 작거나 같은 공차를 달성하는 것도 가능함을 보여준다.
환언컨데, 본 발명에 따른 방법으로 SMD-LED와 회로캐리어의 소자고유의 공차를 실질적으로 또는 심지어 완전히 제거하는 것이 가능하다. 환언컨데, 본 발명에 따른 방법으로 얻을 수 있는 공차는 SMD-LED의 발광영역을 위하여 사용되는 검출방법의 정밀성에 의하여서만 현재 실질적으로 제한된다. 프로젝트(project) 요구에 따라서, SMD-LED와 회로캐리어의 구조에 관계없이 충분히 정밀한 검출방법을 선택할 수 있고 이로써 프로젝트에 규정된 공차의 구현이 이루어질 수 있다. 환언컨데, 가격이 더 저렴하거나 더 간단한 소자의 더 큰 공차는 보다 정밀한 검출방법을 이용하여 보정될 수 있다. 보다 정밀한 검출방법은 보다 정밀한 광학카메라 또는 보다 정밀한 "픽 앤 플레이스" 장치를 이용하거나 또는 이들 장치를 함께 이용하여 성취될 수 있다.
적어도 하나의 SMD-LED의 발광영역의 검출은 예를 들어 발광영역의 특징적인 외형을 검출하는 광학카메라를 이용하여 이루어질 수 있다.
본 발명의 유리한 실시형태가 첨부된 청구범위에 열거되어 있다.
본 발명은 예를 들어 광원이 LED인 차량의 전면헤드라이트, 주간주행등, 방향지시등, 액티브 벤딩 라이트 등에 사용되는 회로캐리어에 대하여 사용될 수 있다.
기준점 또는 기준점들은 예를 들어 통공(원형공 또는 장공)의 형태일 수 있다. 부가적으로 또는 다른 방식으로 에칭구조 또는 인쇄구조를 이용할 수도 있다.
예를 들어, 회로캐리어에 SMD-LED를 취부하는 것은 SMD-LED의 발광영역의 중심점의 위치에 따라 이루어질 수 있다. 이는 통상적으로 SMD-LED 의 빔경로내에 배치되는 광학계의 배향이 SMD-LED의 발광영역의 중심점에 대하여 이루어지기 때문에 특히 유리하다.
적어도 하나의 기준점이 적어도 하나의 SMD-LED를 위한 광학계를 배치하기 위하여 그리고 좋기로는 고정하기 위하여 사용되는 것이 특히 좋다. 종래의 기술에서는 SMD-LED가 구비된 회로캐리어가 취부과정에서 전용의 공정단계에서 광학계에 대하여 배향되어야 한다. 이러한 것은 본 발명의 우선실시형태에서는 생략될 수 있는데 그 이유는 광학계의 배치를 위하여 적어도 하나의 기준점을 이용하는 것은 광학계가 이미 정확하게 배향된다는 것을 의미하기 때문이다. 만약 적어도 하나의 기준점이 광학계의 배치뿐만 아니라 회로캐리어에 대한 광학계의 고정을 위하여 사용되는 경우(이러한 경우 적어도 하나의 기준점이 예를 들어 광학계를 취부하기 위한 취부공의 형태이다), 이는 최상의 정확도를 제공한다. 많은 경우에 있어서, 적어도 하나의 기준점에 대하여 배향되는, 광학계를 위한 별도의 고정장소를 제공할 수 있다.
추후 회로캐리어의 기준점 또는 기준점들에 대하여 적어도 하나의 SMD-LED를 배향하는 것이 가능하도록 하기 위하여, 회로캐리어의 기준점의 위치를 검출할 필요가 있다. 이는 예를 들어 광학카메라가 기존의 기준점들을 통과하고 소자의 고유공차로 유발되는(arise out of) 목표위치에 대한 각 편차를 확인하는 방식으로 이루어질 수 있다. SMD-LED에 대하여 광학계를 배치하기 위해 추후에 또한 사용되는 이들 기준점의 위치가 사용되는 것이 좋다.
통상적으로 SMD-LED들은 피드 벨트(feed belt)에 제공되고 이들은 종래기술에 해당하는 "픽 앤 플레이스" 시스템, 예를 들어 흡착기[진공피펫(vacuum pipette)]에 의하여 피드 벨트에 배치된 포켓으로부터 이송된다. 종래기술에서 SMD-LED의 외형 또는 단자패드(terminal pad)의 위치는 피드 벨트로부터 이송된 후에 하측으로부터 검출된다. 이것은 SMD-LED의 상측부인 발광영역의 위치가 중요하기 때문에 본 발명의 경우에 있어서는 가능하지 않다. 따라서 진공피펫 시스템을 사용할 때 발광영역의 검출은 흡착기에 의하여 접촉하기 전에 이루어져야 한다. 다른 방식으로 제공되는 SMD-LED의 경우에 있어서는 이러한 요건이 반드시 발생할 필요는 없다.
진공피펫 시스템이 사용될 때 본 발명은 다음과 같이 수행될 수 있다: 벨트로부터 이송될 SMD-LED의 발광영역의 위치가 피드 벨트의 각 포켓을 볼 수 있는 위치에 배치되거나 이러한 위치로 이동가능한 카메라에 의하여 검출된다. 검출된 위치는 포켓내의 SMD-LED의 목표위치와 비교되는 것이 좋으며, 여기에서 SMD-LED는 피드 벨트의 이동방향에 배향된 상태로 포켓의 중앙에 배치되어 있게 한다(Y-방향, X-방향 = 피드 벨트의 평면에서 Y-방향에 직각인 방향). 발광영역의 중심점의 X- 및 Y-방향과 발광영역의 각위치(angular position)에 비교하여 목표위치에 대하여 발광영역의 검출된 위치에 대한 편차가 계산된다. 환언컨데, 피드 벨트의 포켓에서 SMD-LED의 임의위치가 확인되고 목표위치와 비교된다.
발광영역의 위치의 검출은 LED 스펙트럼에 적응된 파장을 갖는 광원으로 조명되는 SMD-LED 에 의하여 보다 강화될 수 있다. 이와 같이 함으로써 SMD-LED의 발광영역과 남은 영역 사이의 콘트라스트(contrast)가 증가될 수 있다. 적응된 파장은 예를 들어 400 nm 내지 500 nm의 범위, 좋기로는 420 nm 내지 490 nm의 범위일 수 있다.
상기 임의위치는 진공피펫에 의하여 포켓으로부터 이송될 때 더 이상 변경되지 않아야 한다. 이를 위하여 발광영역 또는 SMD-LED의 Z-위치(Z-방향 = X-방향 및 Y-방향에 직각이다)를 확인하는 것이 또한 유리할 수 있는데 그 이유는 이후에 진공피펫에 의한 접촉이 이러한 접촉시에 포켓내에서 SMD-LED의 위치가 변경되지 않는 방식으로 부드럽게 이루어질 수 있기 때문이다.
회로캐리어의 위치는 기준점의 위치를 확인함으로써 알 수 있기 때문에, SMD-LED의 발광영역의 확인된 편차에 의하여 진공피펫이 X- 및 Y-방향에서의 기존 편차 그리고 또한 SMD-LED에 직각인 축선을 중심으로 하는 회전에 의한 기존 편차를 바로잡고 따라서 이 진공피펫이 SMD-LED를 발광영역에 대하여 정확한 위치로 배향하는 방식으로 진공피펫이 작동될 수 있다. 진공피펫에 고정된다는 것은 진공피펫의 축선에 대하여 다른 각도가 관련될 수 없음을 의미하므로 SMD-LED의 경사는 고려할 필요가 없다.
이후 설명되는 것은 정확한 위치로 배향된 SMD-LED가 정확한 위치에서 회로캐리어에 취부될 수 있는 두 방법에 관한 것이다.
적어도 하나의 SMD-LED를 회로캐리어에 취부하기 위한 제1 방법에서, 적어도 하나의 SMD-LED가 배향된 후에 SMD-LED에 은소결물질이 배치되고 적어도 하나의 SMD-LED가 은-소결된다.
구비될 회로캐리어 또는 SMD-LED 또는 구비될 회로캐리와 SMD-LED 모두는 온도가 상승되고 이 상승된 온도에서 소결물질이 구비된 SMD-LED를 가압하자마자 그리고 가압함으로써 이 소결물질이 소결되는 것이 좋다.
공정시간을 현저히 줄이기 위하여, 은소결물질의 입자크기는 약 100 nm 이하, 좋기로는 약 60 nm 이하이어야 한다. 이와 같이 함으로써, 공정이 시작된 후 1 초 내지 5 초 이하의 접촉시간 내에 소결이 이루어진다. 예를 들어 약 20 nm 내지 약 40 nm 범위의 입자크기를 갖는 소결물질이 사용될 수 있다. 요구된 입자크기의 은소결물질은 다양한 공급자로부터 입수할 수 있다.
SMD-LED 상에 은소결물질을 배치하는 것은 예를 들어 SMD-LED에 은소결물질과 적당한 유기분리제의 페이스트를 도포함으로써 이루어질 수 있다.
예를 들어 제조공급된 페이스트의 침전물에 단자패드를 침지함으로써 진공피펫에 대하여 SMD-LED의 위치를 변경시키지 않고 페이스트가 도포될 수 있다.
또는 은소결물질은 "다이전사필름(Die Transfer Film: DTF)" 방법으로 SMD-LED에 도포될 수 있다. 이 경우에 있어서, 은소결물질은 필름의 형태이다. 이러한 종류의 필름도 상업적으로 입수될 수 있는 것이다.
소결공정이 종료될 때까지 SMD-LED가 진공피펫에 의하여 단단히 고정될 수 있으므로 소결공정에 의하여 SMD-LED의 정확한 위치로 배향된 것에 차후의 변화는 일어나지 않는다. SMD-LED가 진공피펫에 의하여 회로캐리어의 표면에 대하여 가압되므로 SMD-LED는 경사지지 않을 수 있다.
적어도 하나의 SMD-LED를 회로캐리어에 취부하기 위한 제2 방법은 리플로 솔더링방법에 기반한다.
이와 같은 경우 솔더 페이스트가 회로캐리어에 도포되는데, 인쇄하여 도포되는 것이 좋다. 그리고 접착제가 적어도 하나의 SMD-LED의 발광영역의 검출된 위치에 따라 회로캐리어에 도포되는 것이 좋다. SMD-LED가 회로캐리어상에 배치된다. 그리고 접착제가 적어도 부분적으로 경화된다. 이어서 솔더 페이스트의 리플로 솔더링이 이루어질 수 있다.
접착제를 사용함으로써 리플로 솔더링과정에서 SMD-LED가 부동(浮動)하는 것을 방지할 수 있다.
사용된 접착제는 UV-경화형 접착제가 특히 좋다. 이와 같은 경우, 접착제는 UV 광에 노출시켜 적어도 부분적으로 경화될 수 있다. 더욱 특히 좋기로는 UV- 및 온도경화형의 하이브리드 접착제가 사용되는 것이다. 접착제는 추후에 노(furnace)내에서 솔더링 과정중에 경화될 수 있다.
각 개별적인 SMD-LED의 개별적인 조명이 이루어질 수 있으나, 사이클시간을 줄이기 위하여 모든 SMD-LED의 동시조명이 이루어지는 것이 좋다.
본 발명의 다른 이점과 상세한 내용들이 도면과 이러한 도면에 관련된 설명으로부터 명백하게 될 것이다. 도면에서 동일한 구성요소에 대하여서는 동일한 도면부호를 붙였다.
도 1 내지 도 3은 각 개별적인 SMD-LED(2)의 위치상 정확도를 체크하는 테스트 레이아웃(test layout)을 보인 설명도.
도 4a 내지 도 4c는 본 발명의 방법에 따른 단계를 보인 설명도.
도 1 내지 도 3은 각 개별적인 SMD-LED(2)의 위치상 정확도를 체크하는 테스트 레이아웃을 보인 것이다. 회로캐리어(1)는 절연영역(6)에 의하여 서로 절연된 전기 전도면(5)을 갖는다. 전도면(5)에는 단자(7)에 의하여 전력이 공급될 수 있다.
도 1은 6개의 SMD-LED(2)가 구비된 회로캐리어(1)를 보이고 있다. 여기에서는 한편으로는 회로캐리어(1)에서 SMD-LED(2)에 대한 목표위치의 편차를 확인할 수 있도록 하고 다른 한편으로는 SMD-LED(2)에 대하여 광학계(도시하지 않았음)를 고정하기 위하여 또한 사용될 수 있는 두개의 기준점(3)을 볼 수 있다. 광학계는 이 도면에 도시하지 않은 별도의 기준점에 의하여 배향된다.
도 1에서, 취부공정은 종래기술에 따른 "픽 앤 플레이스" 및 리플로 솔더링공정으로 이루어졌다. 본래는 SMD-LED(2)가 기준점(3)에 대하여 이들의 외형에 의하여 배향된다. 리플로 솔더링 공정은 SMD-LED의 위치가 흔들리는 것(blurring)을 포함하므로 이러한 상황은 SMD-LED(2)의 외형의 정연한 배향을 더 이상 포함하지 않는다. SMD-LED(2)의 발광영역(4)에 대한 배향이 전혀 이루어지지 않는다.
도 2는 6개의 SMD-LED(2)가 구비된 회로캐리어(1)를 보인 것으로, 도 1에서 보인 것과 차이가 있다면 SMD-LED(2)가 외형에 대하여 정확한 위치에서 회로캐리어(1)에 취부되지만, SMD-LED(2)의 발광영역(4)에 따라 취부가 이루어지는 것이 아니다. 이러한 회로캐리어(1)는 또한 발광영역(4)의 위치상 정확도에 관련한 조건에 부합되지 않는다.
대조적으로 도 3은 SMD-LED(2)가 회로캐리어(1)에서, 이들의 발광영역(4)에 대하여, 회로캐리어(1)의 기준점(3)에 대해 정확한 위치에 취부된 것을 보인 본 발명의 예에 의한 실시형태를 보인 것이다. 이러한 회로캐리어(1)는 발광영역(4)의 위치상 정확도에 관련된 조건에 부합한다.
도 4는 다음의 단계를 포함하는 본 발명에 따른 방법을 보인 것이다: - 모든 기준점 i(3)에 대하여 기준점 i(3)의 X-방향 및 Y-방향에서 목표위치에 대하여 편차를 확인하는 단계(도 4a), - 이송될 SMD-LED(2)의 발광영역(4)의 X,Y-방향과 각위치에서 그리고 이송될 SMD-LED(2)의 Z-방향에서 목표위치에 대한 편차를 확인하는 단계(도 4b), 및 - 회로캐리어(1)의 기준점 i(3)에 대하여 정확한 위치에서 회로캐리어(1)에 SMD-LED(2)를 취부하는 단계(도 4c).
1: 회로캐리어, 2: SMD-LED, 3: 기준점, 4: 발광영역, 5: 전도면, 6: 절연영역, 7: 단자.

Claims (14)

  1. 적어도 하나의 표면실장형 LED(SMD-LED)(2)가 회로캐리어(1)에서 회로캐리어(1)의 하나 이상의 기준점(3)을 향하도록 배치되는, 상기 적어도 하나의 SMD-LED가 구비된 회로캐리어(1)의 제조를 위한 방법에 있어서, 적어도 하나의 SMD-LED(2)에서 적어도 하나의 SMD-LED(2)의 발광영역(4)의 위치가 광학적으로 검출되고 적어도 하나의 SMD-LED(2)가 적어도 하나의 SMD-LED(2)의 발광영역(4)의 검출된 위치에 따라 회로캐리어(1)에 취부됨을 특징으로 하는 제조방법.
  2. 제1항에 있어서, 발광영역(4)의 위치가 모든 3차원(X, Y, Z)에서 결정되고 각위치가 SMD-LED(2)의 평면에 대하여 직각인 회전축선에 대하여 결정됨을 특징으로 하는 제조방법.
  3. 제1항에 있어서, 회로캐리어(1)에 대한 적어도 하나의 SMD-LED(2)의 취부가 적어도 하나의 SMD-LED(2)의 발광영역(4)의 중심점의 위치에 따라 이루어짐을 특징으로 하는 제조방법.
  4. 제1항에 있어서, 적어도 하나의 기준점(3)이 적어도 하나의 SMD-LED(2)에 대한 광학계의 배치를 위하여 사용됨을 특징으로 하는 제조방법.
  5. 제1항에 있어서, SMD-LED(2)가 LED 스펙트럼에 적응된 파장을 갖는 광원으로 조명됨을 특징으로 하는 제조방법.
  6. 제1항에 있어서, 회로캐리어(1)에 적어도 하나의 SMD-LED(2)를 취부하기 위하여 배향이 이루어진 후에 은소결물질이 적어도 하나의 SMD-LED(2)에 배치되고 적어도 하나의 SMD-LED(2)가 소결됨을 특징으로 하는 제조방법.
  7. 제6항에 있어서, 100 nm 이하의 입자크기를 갖는 은소결물질이 사용됨을 특징으로 하는 제조방법.
  8. 제7항에 있어서, 은소결물질이 20 nm 내지 40 nm 범위의 입자크기를 갖는 것으로 선택됨을 특징으로 하는 제조방법.
  9. 제1항에 있어서, 회로캐리어(1)에 적어도 하나의 SMD-LED(2)를 취부하기 위하여
    - 솔더 페이스트가 회로캐리어(1)에 도포되고,
    - 접착제가 회로캐리어(1)에 도포되며,
    - 회로캐리어(1)에 적어도 하나의 SMD-LED(2)의 배치 후에 접착제가 적어도 부분적으로 경화되고, 그리고
    - 솔더 페이스트의 리플로 솔더링이 이루어짐을
    특징으로 하는 제조방법.
  10. 하나 이상의 기준점(3)과 적어도 하나의 SMD-LED(2)를 갖는 회로캐리어(1)에 있어서, 적어도 하나의 SMD-LED(2)의 발광영역(4)의 위치가 기준점 또는 기준점들(3)을 향하여 배치되는 것을 특징으로 하는 회로캐리어(1).
  11. 제1항에 있어서, 적어도 하나의 기준점(3)이 적어도 하나의 SMD-LED(2)에 대한 광학계를 고정하기 위하여 사용됨을 특징으로 하는 제조방법.
  12. 제1항에 있어서, 회로캐리어(1)에 적어도 하나의 SMD-LED(2)를 취부하기 위하여 배향이 이루어진 후에 은소결물질이 적어도 하나의 SMD-LED(2)에 배치되고, 회로캐리어(1)에 적어도 하나의 SMD-LED(2)를 가압하는 과정 또는 가압한 결과에 의해, 또는 가압하는 과정 및 가압한 결과에 의해 SMD-LED(2)가 소결됨을 특징으로 하는 제조방법.
  13. 제6항에 있어서, 60 nm 이하의 입자 크기를 갖는 은소결물질로 사용됨을 특징으로 하는 제조방법.
  14. 제1항에 있어서, 회로캐리어(1)에 적어도 하나의 SMD-LED(2)를 취부하기 위하여
    - 솔더 페이스트가 인쇄방식으로 회로캐리어(1)에 도포되고,
    - 접착제가 적어도 하나의 SMD-LED(2)의 발광영역(4)의 검출된 위치에 따라 회로캐리어(1)에 도포되며,
    - 회로캐리어(1)에 적어도 하나의 SMD-LED(2)의 배치 후에 접착제가 적어도 부분적으로 경화되고, 그리고
    - 솔더 페이스트의 리플로 솔더링이 이루어짐을
    특징으로 하는 제조방법.
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