KR101477807B1 - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

Info

Publication number
KR101477807B1
KR101477807B1 KR1020080069792A KR20080069792A KR101477807B1 KR 101477807 B1 KR101477807 B1 KR 101477807B1 KR 1020080069792 A KR1020080069792 A KR 1020080069792A KR 20080069792 A KR20080069792 A KR 20080069792A KR 101477807 B1 KR101477807 B1 KR 101477807B1
Authority
KR
South Korea
Prior art keywords
leads
lead
common
delete delete
suspension
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020080069792A
Other languages
English (en)
Korean (ko)
Other versions
KR20090009142A (ko
Inventor
노리유끼 다까하시
Original Assignee
르네사스 일렉트로닉스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 르네사스 일렉트로닉스 가부시키가이샤 filed Critical 르네사스 일렉트로닉스 가부시키가이샤
Publication of KR20090009142A publication Critical patent/KR20090009142A/ko
Application granted granted Critical
Publication of KR101477807B1 publication Critical patent/KR101477807B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/325—Die-attach connectors having a filler embedded in a matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5366—Shapes of wire connectors the bond wires having kinks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Wire Bonding (AREA)
KR1020080069792A 2007-07-19 2008-07-18 반도체 장치 및 그 제조 방법 Active KR101477807B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007187789 2007-07-19
JPJP-P-2007-00187789 2007-07-19
JPJP-P-2007-00316920 2007-12-07
JP2007316920A JP5155644B2 (ja) 2007-07-19 2007-12-07 半導体装置

Publications (2)

Publication Number Publication Date
KR20090009142A KR20090009142A (ko) 2009-01-22
KR101477807B1 true KR101477807B1 (ko) 2014-12-30

Family

ID=40444481

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080069792A Active KR101477807B1 (ko) 2007-07-19 2008-07-18 반도체 장치 및 그 제조 방법

Country Status (4)

Country Link
JP (1) JP5155644B2 (https=)
KR (1) KR101477807B1 (https=)
CN (2) CN101452902B (https=)
TW (2) TWI452663B (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102044514A (zh) * 2010-04-29 2011-05-04 中颖电子股份有限公司 芯片引线键合区及应用其的半导体器件
JP5798021B2 (ja) * 2011-12-01 2015-10-21 ルネサスエレクトロニクス株式会社 半導体装置
KR102071078B1 (ko) 2012-12-06 2020-01-30 매그나칩 반도체 유한회사 멀티 칩 패키지
CN104103620B (zh) * 2014-07-29 2017-02-15 日月光封装测试(上海)有限公司 引线框架及半导体封装体
CN104485323B (zh) * 2014-12-23 2017-08-25 日月光封装测试(上海)有限公司 引线框架和半导体封装体
CN104547477A (zh) * 2015-01-29 2015-04-29 李秀娟 一种用于肛周脓肿引流术后护理的中药制剂及制备方法
JP2017045944A (ja) 2015-08-28 2017-03-02 ルネサスエレクトロニクス株式会社 半導体装置
JP6394634B2 (ja) * 2016-03-31 2018-09-26 日亜化学工業株式会社 リードフレーム、パッケージ及び発光装置、並びにこれらの製造方法
US10714418B2 (en) * 2018-03-26 2020-07-14 Texas Instruments Incorporated Electronic device having inverted lead pins
US11862540B2 (en) 2020-03-06 2024-01-02 Stmicroelectronics Sdn Bhd Mold flow balancing for a matrix leadframe
CN114203665B (zh) * 2021-12-31 2025-02-11 矽典微电子(上海)有限公司 封装框架及封装结构

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058739A (ja) * 1998-08-10 2000-02-25 Hitachi Ltd 半導体装置およびその製造に用いるリードフレーム
US20040061204A1 (en) * 2002-09-30 2004-04-01 St Assembly Test Services Ltd. Integrated circuit leadframe with ground plane

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4862246A (en) * 1984-09-26 1989-08-29 Hitachi, Ltd. Semiconductor device lead frame with etched through holes
US4791472A (en) * 1985-09-23 1988-12-13 Hitachi, Ltd. Lead frame and semiconductor device using the same
JPS6476745A (en) * 1987-09-17 1989-03-22 Hitachi Ltd Lead frame
JPH01106461A (ja) * 1987-10-20 1989-04-24 Fujitsu Ltd リードフレーム
US5543657A (en) * 1994-10-07 1996-08-06 International Business Machines Corporation Single layer leadframe design with groundplane capability
TW363333B (en) * 1995-04-24 1999-07-01 Toshiba Corp Semiconductor apparatus and manufacturing method thereof and electric apparatus
JPH11168169A (ja) * 1997-12-04 1999-06-22 Hitachi Ltd リードフレームおよびそれを用いた半導体装置ならびにその製造方法
JP2002026179A (ja) * 2000-07-04 2002-01-25 Nec Kyushu Ltd 半導体装置およびその製造方法
JP2002043497A (ja) * 2000-07-27 2002-02-08 Mitsubishi Electric Corp 半導体装置
JP2003023134A (ja) * 2001-07-09 2003-01-24 Hitachi Ltd 半導体装置およびその製造方法
JP4611579B2 (ja) * 2001-07-30 2011-01-12 ルネサスエレクトロニクス株式会社 リードフレーム、半導体装置およびその樹脂封止法
WO2003012863A1 (fr) * 2001-07-31 2003-02-13 Renesas Technology Corp. Dispositif semi-conducteur et procede de fabrication associe
AU2003234812A1 (en) * 2002-06-05 2003-12-22 Hitachi Ulsi Systems Co., Ltd. Semiconductor device
JP3851845B2 (ja) * 2002-06-06 2006-11-29 株式会社ルネサステクノロジ 半導体装置
KR100975692B1 (ko) * 2002-07-01 2010-08-12 가부시끼가이샤 르네사스 테크놀로지 반도체 장치
JP4159431B2 (ja) * 2002-11-15 2008-10-01 株式会社ルネサステクノロジ 半導体装置の製造方法
WO2005024933A1 (ja) * 2003-08-29 2005-03-17 Renesas Technology Corp. 半導体装置の製造方法
JP2005191342A (ja) * 2003-12-26 2005-07-14 Renesas Technology Corp 半導体装置およびその製造方法
JP4417150B2 (ja) * 2004-03-23 2010-02-17 株式会社ルネサステクノロジ 半導体装置
JP2007180077A (ja) * 2005-12-27 2007-07-12 Renesas Technology Corp 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058739A (ja) * 1998-08-10 2000-02-25 Hitachi Ltd 半導体装置およびその製造に用いるリードフレーム
US20040061204A1 (en) * 2002-09-30 2004-04-01 St Assembly Test Services Ltd. Integrated circuit leadframe with ground plane

Also Published As

Publication number Publication date
TWI452663B (zh) 2014-09-11
KR20090009142A (ko) 2009-01-22
TWI514534B (zh) 2015-12-21
TW200915520A (en) 2009-04-01
CN102709268B (zh) 2015-04-08
JP2009044114A (ja) 2009-02-26
JP5155644B2 (ja) 2013-03-06
TW201445691A (zh) 2014-12-01
CN102709268A (zh) 2012-10-03
CN101452902B (zh) 2012-08-08
CN101452902A (zh) 2009-06-10

Similar Documents

Publication Publication Date Title
KR101477807B1 (ko) 반도체 장치 및 그 제조 방법
KR100743335B1 (ko) 반도체 장치
JP5379189B2 (ja) 半導体装置
US8148200B2 (en) Semiconductor device and manufacturing method of the same
KR20000048011A (ko) 반도체 장치
US8368191B2 (en) Semiconductor device and manufacturing method of the same
CN104103534A (zh) 半导体器件制造方法和半导体器件
KR20020052930A (ko) 반도체장치 및 그 제조방법
US20110309483A1 (en) Semiconductor Device
JP4764608B2 (ja) 半導体装置
JP2871575B2 (ja) リードフレームおよびその製造方法ならびに樹脂封止型半導体装置およびその製造方法
JP2019087565A (ja) 半導体装置
KR100384335B1 (ko) 반도체패키지와 그 제조방법
JP2025187353A (ja) リードフレーム、半導体装置及びリードフレームの製造方法
CN116613130A (zh) 引线框架及其制造方法、半导体封装结构及其制造方法
JP2003007953A (ja) 樹脂封止型半導体装置およびその製造方法
JPH1092967A (ja) 底面突起状端子配列型集積回路装置及びその製造方法
JPH09172042A (ja) 半導体装置
JPH1187603A (ja) 樹脂封止型半導体装置及びその製造方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20171120

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20181213

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20191212

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000