KR101447048B1 - Ｓｏｉ 기판 및 반도체장치의 제조방법 - Google Patents

Ｓｏｉ 기판 및 반도체장치의 제조방법 Download PDF

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KR101447048B1
KR101447048B1 KR1020097022636A KR20097022636A KR101447048B1 KR 101447048 B1 KR101447048 B1 KR 101447048B1 KR 1020097022636 A KR1020097022636 A KR 1020097022636A KR 20097022636 A KR20097022636 A KR 20097022636A KR 101447048 B1 KR101447048 B1 KR 101447048B1
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layer
substrate
single crystal
crystal semiconductor
semiconductor substrate
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KR20090130091A (ko
Inventor
야스히로 진보
히로노부 쇼지
히데토 오누마
순페이 야마자키
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
KR1020097022636A 2007-04-20 2008-03-14 Ｓｏｉ 기판 및 반도체장치의 제조방법 Expired - Fee Related KR101447048B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2007-112239 2007-04-20
JP2007112239 2007-04-20
PCT/JP2008/055174 WO2008132895A1 (en) 2007-04-20 2008-03-14 Method for manufacturing soi substrate and semiconductor device

Publications (2)

Publication Number Publication Date
KR20090130091A KR20090130091A (ko) 2009-12-17
KR101447048B1 true KR101447048B1 (ko) 2014-10-06

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KR1020097022636A Expired - Fee Related KR101447048B1 (ko) 2007-04-20 2008-03-14 Ｓｏｉ 기판 및 반도체장치의 제조방법

Country Status (7)

Country Link
US (4) US7709337B2 (https=)
EP (1) EP2140480A4 (https=)
JP (2) JP5490371B2 (https=)
KR (1) KR101447048B1 (https=)
CN (1) CN101663733B (https=)
TW (2) TWI527151B (https=)
WO (1) WO2008132895A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180046668A (ko) * 2016-10-28 2018-05-09 주식회사 다원시스 플랙서블 기판의 제조 방법 및 플랙서블 소자 제조 장치
US12156401B2 (en) 2020-09-18 2024-11-26 Samsung Electronics Co., Ltd. Three-dimensional semiconductor memory device and a method of manufacturing the same

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EP2140480A4 (en) * 2007-04-20 2015-04-22 Semiconductor Energy Lab METHOD FOR PRODUCING AN SOI SUBSTRATE AND SEMICONDUCTOR ARRANGEMENT
EP1993126B1 (en) * 2007-05-18 2011-09-21 Semiconductor Energy Laboratory Co., Ltd. Manufacturing methods of semiconductor substrate
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US7763502B2 (en) * 2007-06-22 2010-07-27 Semiconductor Energy Laboratory Co., Ltd Semiconductor substrate, method for manufacturing semiconductor substrate, semiconductor device, and electronic device
JP5367330B2 (ja) * 2007-09-14 2013-12-11 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法及び半導体装置の作製方法
US8101500B2 (en) * 2007-09-27 2012-01-24 Fairchild Semiconductor Corporation Semiconductor device with (110)-oriented silicon
US8236668B2 (en) * 2007-10-10 2012-08-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
TWI493609B (zh) * 2007-10-23 2015-07-21 半導體能源研究所股份有限公司 半導體基板、顯示面板及顯示裝置的製造方法
JP5464843B2 (ja) * 2007-12-03 2014-04-09 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
US7858495B2 (en) * 2008-02-04 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
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EP2105957A3 (en) * 2008-03-26 2011-01-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing soi substrate and method for manufacturing semiconductor device
JP5654206B2 (ja) * 2008-03-26 2015-01-14 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法及び該ｓｏｉ基板を用いた半導体装置
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JP5522914B2 (ja) * 2008-09-11 2014-06-18 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
US8741740B2 (en) * 2008-10-02 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
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KR102369012B1 (ko) 2009-09-16 2022-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
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US8637381B2 (en) * 2011-10-17 2014-01-28 International Business Machines Corporation High-k dielectric and silicon nitride box region
JP2015111603A (ja) * 2012-03-22 2015-06-18 シャープ株式会社 半導体装置の製造方法、半導体装置、及び表示装置
US8877603B2 (en) 2012-03-30 2014-11-04 International Business Machines Corporation Semiconductor-on-oxide structure and method of forming
JP6175294B2 (ja) * 2012-06-25 2017-08-02 株式会社半導体エネルギー研究所 機能性基板の作製方法および半導体装置の作製方法
WO2014087742A1 (ja) * 2012-12-04 2014-06-12 シャープ株式会社 半導体装置の製造方法及び半導体装置
JP6119325B2 (ja) * 2013-03-14 2017-04-26 セイコーエプソン株式会社 干渉フィルター、干渉フィルターの製造方法、光学モジュール、電子機器、及び接合基板
KR102134845B1 (ko) * 2013-07-12 2020-07-17 삼성디스플레이 주식회사 유기 발광 디스플레이 장치와, 이의 제조 방법
KR102392059B1 (ko) * 2013-07-29 2022-04-28 삼성전자주식회사 반도체 소자 및 그 제조 방법
KR102099881B1 (ko) 2013-09-03 2020-05-15 삼성전자 주식회사 반도체 소자 및 그 제조 방법
CN104808370B (zh) * 2015-05-22 2017-10-31 合肥京东方光电科技有限公司 一种对盒设备、对位方法
JP6396854B2 (ja) * 2015-06-02 2018-09-26 信越化学工業株式会社 酸化物単結晶薄膜を備えた複合ウェーハの製造方法
JP6447439B2 (ja) * 2015-09-28 2019-01-09 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
US9806025B2 (en) 2015-12-29 2017-10-31 Globalfoundries Inc. SOI wafers with buried dielectric layers to prevent Cu diffusion
JP6427712B2 (ja) * 2016-03-25 2018-11-21 日本碍子株式会社 接合方法
US10957722B2 (en) * 2016-05-26 2021-03-23 Joled Inc. Method of manufacturing flexible device using multidirectional oblique irradiation of an interface between a support substrate and a flexible substrate
CN110112192B (zh) * 2019-04-29 2021-07-13 云谷（固安）科技有限公司 一种有机发光显示模组及电子设备
CN110223981A (zh) * 2019-06-05 2019-09-10 中国科学院上海微系统与信息技术研究所 一种柔性soi器件结构及其制备方法
FR3110282B1 (fr) * 2020-05-18 2022-04-15 Soitec Silicon On Insulator Procédé de fabrication d’un substrat semi-conducteur sur isolant pour applications radiofréquences
CN113921694A (zh) * 2020-07-10 2022-01-11 济南晶正电子科技有限公司 一种制备复合压电薄膜的方法

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KR20180046668A (ko) * 2016-10-28 2018-05-09 주식회사 다원시스 플랙서블 기판의 제조 방법 및 플랙서블 소자 제조 장치
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US12156401B2 (en) 2020-09-18 2024-11-26 Samsung Electronics Co., Ltd. Three-dimensional semiconductor memory device and a method of manufacturing the same

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JP2008288578A (ja) 2008-11-27
CN101663733B (zh) 2013-02-27
EP2140480A1 (en) 2010-01-06
TW201515146A (zh) 2015-04-16
WO2008132895A1 (en) 2008-11-06
US20140087543A1 (en) 2014-03-27
TW200903712A (en) 2009-01-16
EP2140480A4 (en) 2015-04-22
US20080261379A1 (en) 2008-10-23
JP5490371B2 (ja) 2014-05-14
US8399329B2 (en) 2013-03-19
JP2009194400A (ja) 2009-08-27
US8951878B2 (en) 2015-02-10
TWI478278B (zh) 2015-03-21
US7709337B2 (en) 2010-05-04
CN101663733A (zh) 2010-03-03
JP5116725B2 (ja) 2013-01-09
KR20090130091A (ko) 2009-12-17
TWI527151B (zh) 2016-03-21
US20100173473A1 (en) 2010-07-08
US20130149840A1 (en) 2013-06-13
US8629031B2 (en) 2014-01-14

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