KR101440393B1 - 반도체장치의 제조방법 - Google Patents

반도체장치의 제조방법 Download PDF

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Publication number
KR101440393B1
KR101440393B1 KR1020130008382A KR20130008382A KR101440393B1 KR 101440393 B1 KR101440393 B1 KR 101440393B1 KR 1020130008382 A KR1020130008382 A KR 1020130008382A KR 20130008382 A KR20130008382 A KR 20130008382A KR 101440393 B1 KR101440393 B1 KR 101440393B1
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South Korea
Prior art keywords
thick
support member
dicing
thin
semiconductor wafer
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Korean (ko)
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KR20130089590A (ko
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카즈나리 나카타
요시아키 테라사키
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미쓰비시덴키 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H10P72/7418—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding of passive members, e.g. a chip mounting substrate

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  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020130008382A 2012-02-02 2013-01-25 반도체장치의 제조방법 Active KR101440393B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2012-020829 2012-02-02
JP2012020829A JP5981154B2 (ja) 2012-02-02 2012-02-02 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR20130089590A KR20130089590A (ko) 2013-08-12
KR101440393B1 true KR101440393B1 (ko) 2014-09-15

Family

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KR1020130008382A Active KR101440393B1 (ko) 2012-02-02 2013-01-25 반도체장치의 제조방법

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US (1) US8993413B2 (https=)
JP (1) JP5981154B2 (https=)
KR (1) KR101440393B1 (https=)
CN (1) CN103295892B (https=)
DE (1) DE102012223093B4 (https=)

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JP5772092B2 (ja) * 2011-03-11 2015-09-02 富士電機株式会社 半導体製造方法および半導体製造装置
JP5895676B2 (ja) * 2012-04-09 2016-03-30 三菱電機株式会社 半導体装置の製造方法
CN105765701B (zh) * 2013-11-26 2018-09-28 三菱电机株式会社 半导体装置的制造方法
US11380585B2 (en) * 2015-04-20 2022-07-05 Mitsubishi Electric Corporation Semiconductor device manufacturing method
WO2018185932A1 (ja) * 2017-04-07 2018-10-11 三菱電機株式会社 半導体の製造方法
JP2021027305A (ja) * 2019-08-09 2021-02-22 株式会社ディスコ プラズマエッチング装置
CN111799152B (zh) * 2020-07-20 2024-05-28 绍兴同芯成集成电路有限公司 一种晶圆双面金属工艺
JP7517936B2 (ja) * 2020-10-01 2024-07-17 株式会社ディスコ 加工装置
JP7538001B2 (ja) * 2020-11-11 2024-08-21 株式会社ディスコ 加工装置
JP7582856B2 (ja) * 2020-12-11 2024-11-13 株式会社ディスコ 加工装置
JP7697792B2 (ja) * 2021-01-26 2025-06-24 株式会社ディスコ 加工装置
JP7596170B2 (ja) * 2021-02-22 2024-12-09 株式会社ディスコ 加工装置
JP7688494B2 (ja) * 2021-02-22 2025-06-04 株式会社ディスコ 加工装置
JP7604277B2 (ja) * 2021-03-15 2024-12-23 株式会社ディスコ 加工装置
JP7762518B2 (ja) * 2021-08-10 2025-10-30 株式会社ディスコ 加工装置
JP7754679B2 (ja) * 2021-10-19 2025-10-15 株式会社ディスコ 加工装置
JP2023114541A (ja) * 2022-02-07 2023-08-18 株式会社東芝 半導体製造装置および半導体装置の製造方法

Citations (3)

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JP2001024010A (ja) * 1999-07-08 2001-01-26 Toshiba Corp 半導体装置の製造方法
KR20040041789A (ko) * 2002-11-11 2004-05-20 삼성전자주식회사 에어 블로잉을 이용한 칩 픽업 방법 및 장치
JP2009289809A (ja) * 2008-05-27 2009-12-10 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法

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US3521128A (en) * 1967-08-02 1970-07-21 Rca Corp Microminiature electrical component having integral indexing means
US5714029A (en) * 1984-03-12 1998-02-03 Nitto Electric Industrial Co., Ltd. Process for working a semiconductor wafer
KR100278137B1 (ko) * 1997-09-04 2001-01-15 가나이 쓰도무 반도체소자의 탑재방법 및 그 시스템, 반도체소자 분리장치 및ic카드의 제조방법
JP2001035817A (ja) * 1999-07-22 2001-02-09 Toshiba Corp ウェーハの分割方法及び半導体装置の製造方法
JP4471563B2 (ja) * 2002-10-25 2010-06-02 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2004146727A (ja) * 2002-10-28 2004-05-20 Tokyo Seimitsu Co Ltd ウェーハの搬送方法
JP4689602B2 (ja) * 2004-05-24 2011-05-25 パナソニック株式会社 ウェハエキスパンド装置、部品供給装置、及びウェハシートのエキスパンド方法
JP2007019379A (ja) 2005-07-11 2007-01-25 Disco Abrasive Syst Ltd ウェーハの加工方法
US7608523B2 (en) * 2005-08-26 2009-10-27 Disco Corporation Wafer processing method and adhesive tape used in the wafer processing method
US20070153453A1 (en) * 2006-01-05 2007-07-05 Applied Materials, Inc. Fully conductive pad for electrochemical mechanical processing
US20080242052A1 (en) * 2007-03-30 2008-10-02 Tao Feng Method of forming ultra thin chips of power devices
JP5354149B2 (ja) * 2008-04-08 2013-11-27 株式会社東京精密 エキスパンド方法
JP2010062375A (ja) 2008-09-04 2010-03-18 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2010093005A (ja) 2008-10-07 2010-04-22 Disco Abrasive Syst Ltd ウエーハの加工方法
JP5378780B2 (ja) * 2008-12-19 2013-12-25 株式会社ディスコ テープ拡張方法およびテープ拡張装置
JP5487621B2 (ja) * 2009-01-05 2014-05-07 株式会社ニコン 半導体装置の製造方法及び半導体製造装置
JP5471064B2 (ja) 2009-06-24 2014-04-16 富士電機株式会社 半導体装置の製造方法
JP5171764B2 (ja) * 2009-09-03 2013-03-27 株式会社沖データ 半導体複合装置の製造方法
JP5523033B2 (ja) * 2009-09-14 2014-06-18 株式会社ディスコ ウエーハの加工方法及び環状凸部除去装置
JP5346773B2 (ja) * 2009-10-30 2013-11-20 リンテック株式会社 半導体ウェハの凸部除去装置および除去方法
JP5651362B2 (ja) * 2010-03-29 2015-01-14 リンテック株式会社 ダイシング装置およびダイシング方法
JP2011222843A (ja) * 2010-04-13 2011-11-04 Renesas Electronics Corp 半導体装置の製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001024010A (ja) * 1999-07-08 2001-01-26 Toshiba Corp 半導体装置の製造方法
KR20040041789A (ko) * 2002-11-11 2004-05-20 삼성전자주식회사 에어 블로잉을 이용한 칩 픽업 방법 및 장치
JP2009289809A (ja) * 2008-05-27 2009-12-10 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JP5981154B2 (ja) 2016-08-31
DE102012223093A1 (de) 2013-08-08
CN103295892B (zh) 2016-03-23
US8993413B2 (en) 2015-03-31
CN103295892A (zh) 2013-09-11
JP2013161863A (ja) 2013-08-19
DE102012223093B4 (de) 2018-11-29
US20130203241A1 (en) 2013-08-08
KR20130089590A (ko) 2013-08-12

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