DE102012223093B4 - Verfahren zur Herstellung einer Halbleitervorrichtung - Google Patents

Verfahren zur Herstellung einer Halbleitervorrichtung Download PDF

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Publication number
DE102012223093B4
DE102012223093B4 DE102012223093.9A DE102012223093A DE102012223093B4 DE 102012223093 B4 DE102012223093 B4 DE 102012223093B4 DE 102012223093 A DE102012223093 A DE 102012223093A DE 102012223093 B4 DE102012223093 B4 DE 102012223093B4
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DE
Germany
Prior art keywords
wafer
substrate
thick
thin
thick portion
Prior art date
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Active
Application number
DE102012223093.9A
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German (de)
English (en)
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DE102012223093A1 (de
Inventor
Kazunari Nakata
Yoshiaki Terasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication date
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Publication of DE102012223093A1 publication Critical patent/DE102012223093A1/de
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H10P72/7418—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding of passive members, e.g. a chip mounting substrate

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  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
DE102012223093.9A 2012-02-02 2012-12-13 Verfahren zur Herstellung einer Halbleitervorrichtung Active DE102012223093B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-020829 2012-02-02
JP2012020829A JP5981154B2 (ja) 2012-02-02 2012-02-02 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE102012223093A1 DE102012223093A1 (de) 2013-08-08
DE102012223093B4 true DE102012223093B4 (de) 2018-11-29

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE102012223093.9A Active DE102012223093B4 (de) 2012-02-02 2012-12-13 Verfahren zur Herstellung einer Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US8993413B2 (https=)
JP (1) JP5981154B2 (https=)
KR (1) KR101440393B1 (https=)
CN (1) CN103295892B (https=)
DE (1) DE102012223093B4 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5772092B2 (ja) * 2011-03-11 2015-09-02 富士電機株式会社 半導体製造方法および半導体製造装置
JP5895676B2 (ja) * 2012-04-09 2016-03-30 三菱電機株式会社 半導体装置の製造方法
CN105765701B (zh) * 2013-11-26 2018-09-28 三菱电机株式会社 半导体装置的制造方法
US11380585B2 (en) * 2015-04-20 2022-07-05 Mitsubishi Electric Corporation Semiconductor device manufacturing method
WO2018185932A1 (ja) * 2017-04-07 2018-10-11 三菱電機株式会社 半導体の製造方法
JP2021027305A (ja) * 2019-08-09 2021-02-22 株式会社ディスコ プラズマエッチング装置
CN111799152B (zh) * 2020-07-20 2024-05-28 绍兴同芯成集成电路有限公司 一种晶圆双面金属工艺
JP7517936B2 (ja) * 2020-10-01 2024-07-17 株式会社ディスコ 加工装置
JP7538001B2 (ja) * 2020-11-11 2024-08-21 株式会社ディスコ 加工装置
JP7582856B2 (ja) * 2020-12-11 2024-11-13 株式会社ディスコ 加工装置
JP7697792B2 (ja) * 2021-01-26 2025-06-24 株式会社ディスコ 加工装置
JP7596170B2 (ja) * 2021-02-22 2024-12-09 株式会社ディスコ 加工装置
JP7688494B2 (ja) * 2021-02-22 2025-06-04 株式会社ディスコ 加工装置
JP7604277B2 (ja) * 2021-03-15 2024-12-23 株式会社ディスコ 加工装置
JP7762518B2 (ja) * 2021-08-10 2025-10-30 株式会社ディスコ 加工装置
JP7754679B2 (ja) * 2021-10-19 2025-10-15 株式会社ディスコ 加工装置
JP2023114541A (ja) * 2022-02-07 2023-08-18 株式会社東芝 半導体製造装置および半導体装置の製造方法

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JP2007019379A (ja) 2005-07-11 2007-01-25 Disco Abrasive Syst Ltd ウェーハの加工方法
US20070045799A1 (en) 2005-08-26 2007-03-01 Disco Corporation Wafer processing method and adhesive tape used in the wafer processing method
US20100055877A1 (en) 2008-09-04 2010-03-04 Disco Corporation Wafer processing method
JP2010093005A (ja) 2008-10-07 2010-04-22 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2011009341A (ja) 2009-06-24 2011-01-13 Fuji Electric Systems Co Ltd 半導体装置の製造方法
JP2011210859A (ja) 2010-03-29 2011-10-20 Lintec Corp ダイシング装置およびダイシング方法
JP2011222843A (ja) 2010-04-13 2011-11-04 Renesas Electronics Corp 半導体装置の製造方法

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US3521128A (en) * 1967-08-02 1970-07-21 Rca Corp Microminiature electrical component having integral indexing means
US5714029A (en) * 1984-03-12 1998-02-03 Nitto Electric Industrial Co., Ltd. Process for working a semiconductor wafer
KR100278137B1 (ko) * 1997-09-04 2001-01-15 가나이 쓰도무 반도체소자의 탑재방법 및 그 시스템, 반도체소자 분리장치 및ic카드의 제조방법
JP3538070B2 (ja) 1999-07-08 2004-06-14 株式会社東芝 半導体装置の製造方法
JP2001035817A (ja) * 1999-07-22 2001-02-09 Toshiba Corp ウェーハの分割方法及び半導体装置の製造方法
JP4471563B2 (ja) * 2002-10-25 2010-06-02 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2004146727A (ja) * 2002-10-28 2004-05-20 Tokyo Seimitsu Co Ltd ウェーハの搬送方法
KR100480628B1 (ko) 2002-11-11 2005-03-31 삼성전자주식회사 에어 블로잉을 이용한 칩 픽업 방법 및 장치
JP4689602B2 (ja) * 2004-05-24 2011-05-25 パナソニック株式会社 ウェハエキスパンド装置、部品供給装置、及びウェハシートのエキスパンド方法
US20070153453A1 (en) * 2006-01-05 2007-07-05 Applied Materials, Inc. Fully conductive pad for electrochemical mechanical processing
US20080242052A1 (en) * 2007-03-30 2008-10-02 Tao Feng Method of forming ultra thin chips of power devices
JP5354149B2 (ja) * 2008-04-08 2013-11-27 株式会社東京精密 エキスパンド方法
JP2009289809A (ja) * 2008-05-27 2009-12-10 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法
JP5378780B2 (ja) * 2008-12-19 2013-12-25 株式会社ディスコ テープ拡張方法およびテープ拡張装置
JP5487621B2 (ja) * 2009-01-05 2014-05-07 株式会社ニコン 半導体装置の製造方法及び半導体製造装置
JP5171764B2 (ja) * 2009-09-03 2013-03-27 株式会社沖データ 半導体複合装置の製造方法
JP5523033B2 (ja) * 2009-09-14 2014-06-18 株式会社ディスコ ウエーハの加工方法及び環状凸部除去装置
JP5346773B2 (ja) * 2009-10-30 2013-11-20 リンテック株式会社 半導体ウェハの凸部除去装置および除去方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007019379A (ja) 2005-07-11 2007-01-25 Disco Abrasive Syst Ltd ウェーハの加工方法
US20070045799A1 (en) 2005-08-26 2007-03-01 Disco Corporation Wafer processing method and adhesive tape used in the wafer processing method
US20100055877A1 (en) 2008-09-04 2010-03-04 Disco Corporation Wafer processing method
JP2010093005A (ja) 2008-10-07 2010-04-22 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2011009341A (ja) 2009-06-24 2011-01-13 Fuji Electric Systems Co Ltd 半導体装置の製造方法
JP2011210859A (ja) 2010-03-29 2011-10-20 Lintec Corp ダイシング装置およびダイシング方法
JP2011222843A (ja) 2010-04-13 2011-11-04 Renesas Electronics Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JP5981154B2 (ja) 2016-08-31
DE102012223093A1 (de) 2013-08-08
CN103295892B (zh) 2016-03-23
US8993413B2 (en) 2015-03-31
CN103295892A (zh) 2013-09-11
JP2013161863A (ja) 2013-08-19
KR101440393B1 (ko) 2014-09-15
US20130203241A1 (en) 2013-08-08
KR20130089590A (ko) 2013-08-12

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