KR101425845B1 - 반도체 장치 및 그 제작 방법 - Google Patents

반도체 장치 및 그 제작 방법 Download PDF

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Publication number
KR101425845B1
KR101425845B1 KR1020080009626A KR20080009626A KR101425845B1 KR 101425845 B1 KR101425845 B1 KR 101425845B1 KR 1020080009626 A KR1020080009626 A KR 1020080009626A KR 20080009626 A KR20080009626 A KR 20080009626A KR 101425845 B1 KR101425845 B1 KR 101425845B1
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South Korea
Prior art keywords
doped semiconductor
film
gate insulating
insulating film
semiconductor layer
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Expired - Fee Related
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KR1020080009626A
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English (en)
Korean (ko)
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KR20080071521A (ko
Inventor
구니오 호소야
사이시 후지카와
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/431—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different compositions, shapes, layouts or thicknesses of gate insulators in different TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020080009626A 2007-01-30 2008-01-30 반도체 장치 및 그 제작 방법 Expired - Fee Related KR101425845B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007019662 2007-01-30
JPJP-P-2007-00019662 2007-01-30

Publications (2)

Publication Number Publication Date
KR20080071521A KR20080071521A (ko) 2008-08-04
KR101425845B1 true KR101425845B1 (ko) 2014-08-05

Family

ID=39402813

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080009626A Expired - Fee Related KR101425845B1 (ko) 2007-01-30 2008-01-30 반도체 장치 및 그 제작 방법

Country Status (6)

Country Link
US (2) US7777224B2 (enExample)
EP (1) EP1953813A3 (enExample)
JP (1) JP5216339B2 (enExample)
KR (1) KR101425845B1 (enExample)
CN (1) CN101236973B (enExample)
TW (1) TWI424531B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI501319B (zh) * 2008-12-26 2015-09-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI556323B (zh) * 2009-03-13 2016-11-01 半導體能源研究所股份有限公司 半導體裝置及該半導體裝置的製造方法
KR20220100086A (ko) 2009-07-10 2022-07-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
CN101789398B (zh) * 2010-03-09 2012-08-22 友达光电股份有限公司 半导体元件的制造方法
JP6072858B2 (ja) * 2015-06-22 2017-02-01 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR20220079442A (ko) * 2020-12-04 2022-06-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 표시 장치의 제작 방법
CN117976675A (zh) * 2022-10-26 2024-05-03 瀚宇彩晶股份有限公司 反射式显示装置以及其制造方法

Citations (4)

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Publication number Priority date Publication date Assignee Title
JPH06222387A (ja) * 1993-01-21 1994-08-12 Sharp Corp 半導体装置
JPH10256554A (ja) * 1997-03-13 1998-09-25 Toshiba Corp 薄膜トランジスタ及びその製造方法
JP2000036599A (ja) * 1998-07-16 2000-02-02 Semiconductor Energy Lab Co Ltd 半導体素子からなる半導体回路を備えた半導体装置およびその作製方法
US20060051914A1 (en) * 2004-09-08 2006-03-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device

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JPS6037313A (ja) * 1983-08-10 1985-02-26 Kenji Ishikura コンクリ−トブロツク
US5821563A (en) 1990-12-25 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device free from reverse leakage and throw leakage
JPH0637313A (ja) 1992-07-16 1994-02-10 Hitachi Ltd 薄膜半導体装置とその製造方法
JPH07131030A (ja) * 1993-11-05 1995-05-19 Sony Corp 表示用薄膜半導体装置及びその製造方法
JP3504025B2 (ja) 1995-06-06 2004-03-08 三菱電機株式会社 半導体装置およびその製造方法
DE69717174T2 (de) * 1996-03-19 2003-04-03 Exedy Corp., Neyagawa Vorrichtung für die Bewegungsbegrenzung einer Multilamellen- Reibungskupplung
JP3593212B2 (ja) 1996-04-27 2004-11-24 株式会社半導体エネルギー研究所 表示装置
TW334581B (en) 1996-06-04 1998-06-21 Handotai Energy Kenkyusho Kk Semiconductor integrated circuit and fabrication method thereof
JP3607016B2 (ja) 1996-10-02 2005-01-05 株式会社半導体エネルギー研究所 半導体装置およびその作製方法、並びに携帯型の情報処理端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、カメラおよびプロジェクター
JP3943245B2 (ja) 1997-09-20 2007-07-11 株式会社半導体エネルギー研究所 半導体装置
US6261881B1 (en) 1998-08-21 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device provided with semiconductor circuit consisting of semiconductor element and method of manufacturing the same
JP4493741B2 (ja) 1998-09-04 2010-06-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7022556B1 (en) 1998-11-11 2006-04-04 Semiconductor Energy Laboratory Co., Ltd. Exposure device, exposure method and method of manufacturing semiconductor device
DE69942442D1 (de) 1999-01-11 2010-07-15 Semiconductor Energy Lab Halbleiteranordnung mit Treiber-TFT und Pixel-TFT auf einem Substrat
US6593592B1 (en) 1999-01-29 2003-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having thin film transistors
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JP4118484B2 (ja) 2000-03-06 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4700160B2 (ja) 2000-03-13 2011-06-15 株式会社半導体エネルギー研究所 半導体装置
JP4118485B2 (ja) 2000-03-13 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4683688B2 (ja) 2000-03-16 2011-05-18 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP4785229B2 (ja) 2000-05-09 2011-10-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6228721B1 (en) * 2000-06-26 2001-05-08 Advanced Micro Devices, Inc. Fabrication of metal oxide structures with different thicknesses on a semiconductor substrate
JP4678933B2 (ja) 2000-11-07 2011-04-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003109773A (ja) 2001-07-27 2003-04-11 Semiconductor Energy Lab Co Ltd 発光装置、半導体装置およびそれらの作製方法
JP4737971B2 (ja) * 2003-11-14 2011-08-03 株式会社半導体エネルギー研究所 液晶表示装置および液晶表示装置の作製方法
JP4889968B2 (ja) 2005-07-05 2012-03-07 ソニー株式会社 電力線搬送通信システム、電力線搬送通信方法、通信装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06222387A (ja) * 1993-01-21 1994-08-12 Sharp Corp 半導体装置
JPH10256554A (ja) * 1997-03-13 1998-09-25 Toshiba Corp 薄膜トランジスタ及びその製造方法
JP2000036599A (ja) * 1998-07-16 2000-02-02 Semiconductor Energy Lab Co Ltd 半導体素子からなる半導体回路を備えた半導体装置およびその作製方法
US20060051914A1 (en) * 2004-09-08 2006-03-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
JP5216339B2 (ja) 2013-06-19
CN101236973A (zh) 2008-08-06
EP1953813A2 (en) 2008-08-06
CN101236973B (zh) 2012-12-12
US7777224B2 (en) 2010-08-17
EP1953813A3 (en) 2017-09-06
US20080283835A1 (en) 2008-11-20
TWI424531B (zh) 2014-01-21
US20100304538A1 (en) 2010-12-02
JP2008211195A (ja) 2008-09-11
KR20080071521A (ko) 2008-08-04
TW200849475A (en) 2008-12-16
US8273614B2 (en) 2012-09-25

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