TWI424531B - 半導體裝置及其製造方法 - Google Patents
半導體裝置及其製造方法 Download PDFInfo
- Publication number
- TWI424531B TWI424531B TW097102207A TW97102207A TWI424531B TW I424531 B TWI424531 B TW I424531B TW 097102207 A TW097102207 A TW 097102207A TW 97102207 A TW97102207 A TW 97102207A TW I424531 B TWI424531 B TW I424531B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- gate insulating
- insulating film
- semiconductor layer
- gate electrode
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 769
- 238000004519 manufacturing process Methods 0.000 title claims description 67
- 239000010408 film Substances 0.000 claims description 869
- 238000005530 etching Methods 0.000 claims description 227
- 239000010409 thin film Substances 0.000 claims description 128
- 239000003990 capacitor Substances 0.000 claims description 52
- 238000003860 storage Methods 0.000 claims description 52
- 230000002093 peripheral effect Effects 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 30
- 238000009751 slip forming Methods 0.000 claims description 13
- 238000010030 laminating Methods 0.000 claims description 5
- 239000013081 microcrystal Substances 0.000 claims description 4
- 239000004744 fabric Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 253
- 239000000758 substrate Substances 0.000 description 65
- 238000000034 method Methods 0.000 description 49
- 239000007789 gas Substances 0.000 description 41
- 239000012535 impurity Substances 0.000 description 40
- 230000015572 biosynthetic process Effects 0.000 description 33
- 238000005468 ion implantation Methods 0.000 description 18
- 239000000460 chlorine Substances 0.000 description 17
- 229910052732 germanium Inorganic materials 0.000 description 15
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 15
- 238000001312 dry etching Methods 0.000 description 14
- 239000004973 liquid crystal related substance Substances 0.000 description 13
- 230000009467 reduction Effects 0.000 description 13
- 239000011159 matrix material Substances 0.000 description 12
- 238000000137 annealing Methods 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- 239000002585 base Substances 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 229910052801 chlorine Inorganic materials 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 238000001039 wet etching Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 8
- 238000005401 electroluminescence Methods 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 7
- 239000000428 dust Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 239000000565 sealant Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000004904 shortening Methods 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 229910052779 Neodymium Inorganic materials 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010348 incorporation Methods 0.000 description 3
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- -1 polyethylene terephthalate Polymers 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 229910018125 Al-Si Inorganic materials 0.000 description 2
- 229910018520 Al—Si Inorganic materials 0.000 description 2
- 229910018575 Al—Ti Inorganic materials 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 210000001747 pupil Anatomy 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- YEBRIDHEOJIAAW-UHFFFAOYSA-N silicon;tetrachlorosilane Chemical compound [Si].Cl[Si](Cl)(Cl)Cl YEBRIDHEOJIAAW-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/431—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different compositions, shapes, layouts or thicknesses of gate insulators in different TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
Landscapes
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007019662 | 2007-01-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200849475A TW200849475A (en) | 2008-12-16 |
| TWI424531B true TWI424531B (zh) | 2014-01-21 |
Family
ID=39402813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097102207A TWI424531B (zh) | 2007-01-30 | 2008-01-21 | 半導體裝置及其製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7777224B2 (enExample) |
| EP (1) | EP1953813A3 (enExample) |
| JP (1) | JP5216339B2 (enExample) |
| KR (1) | KR101425845B1 (enExample) |
| CN (1) | CN101236973B (enExample) |
| TW (1) | TWI424531B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI482226B (zh) | 2008-12-26 | 2015-04-21 | 半導體能源研究所股份有限公司 | 具有包含氧化物半導體層之電晶體的主動矩陣顯示裝置 |
| TWI556323B (zh) * | 2009-03-13 | 2016-11-01 | 半導體能源研究所股份有限公司 | 半導體裝置及該半導體裝置的製造方法 |
| KR101857405B1 (ko) | 2009-07-10 | 2018-05-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| CN101789398B (zh) * | 2010-03-09 | 2012-08-22 | 友达光电股份有限公司 | 半导体元件的制造方法 |
| JP6072858B2 (ja) * | 2015-06-22 | 2017-02-01 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| KR20220079442A (ko) * | 2020-12-04 | 2022-06-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 표시 장치의 제작 방법 |
| CN117976675A (zh) * | 2022-10-26 | 2024-05-03 | 瀚宇彩晶股份有限公司 | 反射式显示装置以及其制造方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5652453A (en) * | 1995-06-06 | 1997-07-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with a semiconductor layer formed on an insulating film and manufacturing method thereof |
| US5821563A (en) * | 1990-12-25 | 1998-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device free from reverse leakage and throw leakage |
| US6228721B1 (en) * | 2000-06-26 | 2001-05-08 | Advanced Micro Devices, Inc. | Fabrication of metal oxide structures with different thicknesses on a semiconductor substrate |
| US6261881B1 (en) * | 1998-08-21 | 2001-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device provided with semiconductor circuit consisting of semiconductor element and method of manufacturing the same |
| US6278131B1 (en) * | 1999-01-11 | 2001-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Pixel TFT and driver TFT having different gate insulation width |
| US20060051914A1 (en) * | 2004-09-08 | 2006-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6037313A (ja) * | 1983-08-10 | 1985-02-26 | Kenji Ishikura | コンクリ−トブロツク |
| JPH0637313A (ja) | 1992-07-16 | 1994-02-10 | Hitachi Ltd | 薄膜半導体装置とその製造方法 |
| JP3025385B2 (ja) * | 1993-01-21 | 2000-03-27 | シャープ株式会社 | 半導体装置 |
| JPH07131030A (ja) * | 1993-11-05 | 1995-05-19 | Sony Corp | 表示用薄膜半導体装置及びその製造方法 |
| US5904234A (en) * | 1996-03-19 | 1999-05-18 | Exedy Corporation | Multi-plate dry clutch having hub movement limiting means |
| JP3593212B2 (ja) | 1996-04-27 | 2004-11-24 | 株式会社半導体エネルギー研究所 | 表示装置 |
| TW334581B (en) | 1996-06-04 | 1998-06-21 | Handotai Energy Kenkyusho Kk | Semiconductor integrated circuit and fabrication method thereof |
| JP3607016B2 (ja) | 1996-10-02 | 2005-01-05 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法、並びに携帯型の情報処理端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、カメラおよびプロジェクター |
| JPH10256554A (ja) * | 1997-03-13 | 1998-09-25 | Toshiba Corp | 薄膜トランジスタ及びその製造方法 |
| JP3943245B2 (ja) | 1997-09-20 | 2007-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP3592535B2 (ja) * | 1998-07-16 | 2004-11-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4493741B2 (ja) | 1998-09-04 | 2010-06-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7022556B1 (en) | 1998-11-11 | 2006-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Exposure device, exposure method and method of manufacturing semiconductor device |
| US6593592B1 (en) | 1999-01-29 | 2003-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having thin film transistors |
| US20020113268A1 (en) | 2000-02-01 | 2002-08-22 | Jun Koyama | Nonvolatile memory, semiconductor device and method of manufacturing the same |
| JP4118484B2 (ja) | 2000-03-06 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4700160B2 (ja) | 2000-03-13 | 2011-06-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP4118485B2 (ja) | 2000-03-13 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4683688B2 (ja) | 2000-03-16 | 2011-05-18 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
| JP4785229B2 (ja) | 2000-05-09 | 2011-10-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4678933B2 (ja) | 2000-11-07 | 2011-04-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2003109773A (ja) | 2001-07-27 | 2003-04-11 | Semiconductor Energy Lab Co Ltd | 発光装置、半導体装置およびそれらの作製方法 |
| JP4737971B2 (ja) * | 2003-11-14 | 2011-08-03 | 株式会社半導体エネルギー研究所 | 液晶表示装置および液晶表示装置の作製方法 |
| JP4889968B2 (ja) | 2005-07-05 | 2012-03-07 | ソニー株式会社 | 電力線搬送通信システム、電力線搬送通信方法、通信装置 |
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2008
- 2008-01-18 US US12/016,767 patent/US7777224B2/en not_active Expired - Fee Related
- 2008-01-21 TW TW097102207A patent/TWI424531B/zh not_active IP Right Cessation
- 2008-01-21 EP EP08001057.2A patent/EP1953813A3/en not_active Withdrawn
- 2008-01-29 JP JP2008017045A patent/JP5216339B2/ja not_active Expired - Fee Related
- 2008-01-30 CN CN2008100044945A patent/CN101236973B/zh not_active Expired - Fee Related
- 2008-01-30 KR KR1020080009626A patent/KR101425845B1/ko not_active Expired - Fee Related
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2010
- 2010-07-23 US US12/842,070 patent/US8273614B2/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5821563A (en) * | 1990-12-25 | 1998-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device free from reverse leakage and throw leakage |
| US5652453A (en) * | 1995-06-06 | 1997-07-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with a semiconductor layer formed on an insulating film and manufacturing method thereof |
| US6261881B1 (en) * | 1998-08-21 | 2001-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device provided with semiconductor circuit consisting of semiconductor element and method of manufacturing the same |
| US6278131B1 (en) * | 1999-01-11 | 2001-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Pixel TFT and driver TFT having different gate insulation width |
| US6228721B1 (en) * | 2000-06-26 | 2001-05-08 | Advanced Micro Devices, Inc. | Fabrication of metal oxide structures with different thicknesses on a semiconductor substrate |
| US20060051914A1 (en) * | 2004-09-08 | 2006-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| US20100304538A1 (en) | 2010-12-02 |
| JP2008211195A (ja) | 2008-09-11 |
| TW200849475A (en) | 2008-12-16 |
| US7777224B2 (en) | 2010-08-17 |
| US20080283835A1 (en) | 2008-11-20 |
| CN101236973B (zh) | 2012-12-12 |
| KR101425845B1 (ko) | 2014-08-05 |
| EP1953813A2 (en) | 2008-08-06 |
| CN101236973A (zh) | 2008-08-06 |
| EP1953813A3 (en) | 2017-09-06 |
| JP5216339B2 (ja) | 2013-06-19 |
| KR20080071521A (ko) | 2008-08-04 |
| US8273614B2 (en) | 2012-09-25 |
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