KR101396000B1 - 규소-함유 기판을 연마하기 위한 방법 및 조성물 - Google Patents

규소-함유 기판을 연마하기 위한 방법 및 조성물 Download PDF

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Publication number
KR101396000B1
KR101396000B1 KR1020117004512A KR20117004512A KR101396000B1 KR 101396000 B1 KR101396000 B1 KR 101396000B1 KR 1020117004512 A KR1020117004512 A KR 1020117004512A KR 20117004512 A KR20117004512 A KR 20117004512A KR 101396000 B1 KR101396000 B1 KR 101396000B1
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South Korea
Prior art keywords
polishing
acid
silicon
substrate
cmp
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Korean (ko)
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KR20110053438A (ko
Inventor
프란시스코 드 레게 테사우로
잔 첸
Original Assignee
캐보트 마이크로일렉트로닉스 코포레이션
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/31051Planarisation of the insulating layers
    • H01L21/31053Planarisation of the insulating layers involving a dielectric removal step
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020117004512A 2008-07-30 2009-07-23 규소-함유 기판을 연마하기 위한 방법 및 조성물 Active KR101396000B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/221,023 US8247327B2 (en) 2008-07-30 2008-07-30 Methods and compositions for polishing silicon-containing substrates
US12/221,023 2008-07-30
PCT/US2009/004281 WO2010014180A2 (en) 2008-07-30 2009-07-23 Methods and compositions for polishing silicon-containing substrates

Publications (2)

Publication Number Publication Date
KR20110053438A KR20110053438A (ko) 2011-05-23
KR101396000B1 true KR101396000B1 (ko) 2014-05-16

Family

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Application Number Title Priority Date Filing Date
KR1020117004512A Active KR101396000B1 (ko) 2008-07-30 2009-07-23 규소-함유 기판을 연마하기 위한 방법 및 조성물

Country Status (10)

Country Link
US (2) US8247327B2 (enExample)
EP (1) EP2331649B1 (enExample)
JP (2) JP5628802B2 (enExample)
KR (1) KR101396000B1 (enExample)
CN (1) CN102149783B (enExample)
IL (1) IL210029A (enExample)
MY (1) MY149727A (enExample)
SG (1) SG189801A1 (enExample)
TW (1) TWI398917B (enExample)
WO (1) WO2010014180A2 (enExample)

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KR20230037833A (ko) * 2021-09-10 2023-03-17 성균관대학교산학협력단 연마 조성물 및 이를 이용한 연마 방법

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JP5648567B2 (ja) 2010-05-07 2015-01-07 日立化成株式会社 Cmp用研磨液及びこれを用いた研磨方法
US9070632B2 (en) * 2010-10-07 2015-06-30 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers
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EP2826827B1 (en) * 2013-07-18 2019-06-12 Basf Se CMP composition comprising abrasive particles containing ceria
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KR102670778B1 (ko) * 2015-09-03 2024-05-29 씨엠씨 머티리얼즈 엘엘씨 유전체 기판 처리를 위한 방법 및 조성물
JP6960336B2 (ja) * 2015-10-23 2021-11-05 ニッタ・デュポン株式会社 研磨用組成物
KR102574851B1 (ko) * 2015-12-17 2023-09-06 솔브레인 주식회사 화학기계적 연마 슬러리 조성물
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JP7028592B2 (ja) * 2017-09-19 2022-03-02 株式会社フジミインコーポレーテッド 表面処理組成物、表面処理組成物の製造方法、表面処理方法、および半導体基板の製造方法
WO2019069370A1 (ja) * 2017-10-03 2019-04-11 日立化成株式会社 研磨液、研磨液セット、研磨方法及び欠陥抑制方法
JP7180756B2 (ja) * 2019-04-02 2022-11-30 昭和電工マテリアルズ株式会社 研磨液、研磨液セット、研磨方法及び欠陥抑制方法
JP2022532174A (ja) 2019-05-10 2022-07-13 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 修飾多能性細胞
US11162079B2 (en) 2019-05-10 2021-11-02 The Regents Of The University Of California Blood type O Rh-hypo-immunogenic pluripotent cells
CN113004798B (zh) * 2019-12-19 2024-04-12 安集微电子(上海)有限公司 一种化学机械抛光液
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CN119039991B (zh) * 2024-10-30 2025-06-03 西安蓝桥新能源科技有限公司 一种用于硅片碱刻蚀抛光的添加剂、反应液及方法与应用

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JP2001007059A (ja) * 1999-06-18 2001-01-12 Hitachi Chem Co Ltd Cmp研磨剤及び基板の研磨方法
KR20050005543A (ko) * 2002-06-07 2005-01-13 캐보트 마이크로일렉트로닉스 코포레이션 저-k 유전 물질의 화학적 기계적 연마 (CMP) 방법
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Publication number Priority date Publication date Assignee Title
KR20230037833A (ko) * 2021-09-10 2023-03-17 성균관대학교산학협력단 연마 조성물 및 이를 이용한 연마 방법
KR102731706B1 (ko) 2021-09-10 2024-11-15 성균관대학교산학협력단 연마 조성물 및 이를 이용한 연마 방법

Also Published As

Publication number Publication date
CN102149783A (zh) 2011-08-10
US8247327B2 (en) 2012-08-21
SG189801A1 (en) 2013-05-31
TWI398917B (zh) 2013-06-11
KR20110053438A (ko) 2011-05-23
TW201011826A (en) 2010-03-16
US8597540B2 (en) 2013-12-03
EP2331649A2 (en) 2011-06-15
CN102149783B (zh) 2013-06-12
EP2331649B1 (en) 2018-06-13
JP5952352B2 (ja) 2016-07-13
IL210029A (en) 2015-07-30
WO2010014180A3 (en) 2010-04-22
IL210029A0 (en) 2011-02-28
US20120280170A1 (en) 2012-11-08
JP5628802B2 (ja) 2014-11-19
JP2011530166A (ja) 2011-12-15
JP2014209662A (ja) 2014-11-06
US20100029181A1 (en) 2010-02-04
WO2010014180A2 (en) 2010-02-04
EP2331649A4 (en) 2013-07-03
MY149727A (en) 2013-10-14

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