TWI398917B - 用於拋光含矽基板之方法及組合物 - Google Patents

用於拋光含矽基板之方法及組合物 Download PDF

Info

Publication number
TWI398917B
TWI398917B TW098122070A TW98122070A TWI398917B TW I398917 B TWI398917 B TW I398917B TW 098122070 A TW098122070 A TW 098122070A TW 98122070 A TW98122070 A TW 98122070A TW I398917 B TWI398917 B TW I398917B
Authority
TW
Taiwan
Prior art keywords
polishing
cmp
acid
surfactant
composition
Prior art date
Application number
TW098122070A
Other languages
English (en)
Chinese (zh)
Other versions
TW201011826A (en
Inventor
塞沙洛 法蘭西斯可 迪瑞
陳湛
Original Assignee
卡博特微電子公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 卡博特微電子公司 filed Critical 卡博特微電子公司
Publication of TW201011826A publication Critical patent/TW201011826A/zh
Application granted granted Critical
Publication of TWI398917B publication Critical patent/TWI398917B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW098122070A 2008-07-30 2009-06-30 用於拋光含矽基板之方法及組合物 TWI398917B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/221,023 US8247327B2 (en) 2008-07-30 2008-07-30 Methods and compositions for polishing silicon-containing substrates

Publications (2)

Publication Number Publication Date
TW201011826A TW201011826A (en) 2010-03-16
TWI398917B true TWI398917B (zh) 2013-06-11

Family

ID=41608845

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098122070A TWI398917B (zh) 2008-07-30 2009-06-30 用於拋光含矽基板之方法及組合物

Country Status (10)

Country Link
US (2) US8247327B2 (enExample)
EP (1) EP2331649B1 (enExample)
JP (2) JP5628802B2 (enExample)
KR (1) KR101396000B1 (enExample)
CN (1) CN102149783B (enExample)
IL (1) IL210029A (enExample)
MY (1) MY149727A (enExample)
SG (1) SG189801A1 (enExample)
TW (1) TWI398917B (enExample)
WO (1) WO2010014180A2 (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103342986B (zh) 2008-12-11 2015-01-07 日立化成株式会社 Cmp用研磨液以及使用该研磨液的研磨方法
JP5492603B2 (ja) * 2010-03-02 2014-05-14 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP5648567B2 (ja) * 2010-05-07 2015-01-07 日立化成株式会社 Ｃｍｐ用研磨液及びこれを用いた研磨方法
EP2625236B1 (en) * 2010-10-07 2017-12-13 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers
SG191909A1 (en) * 2011-01-11 2013-08-30 Cabot Microelectronics Corp Metal-passivating cmp compositions and methods
CN102816530B (zh) * 2011-06-08 2016-01-27 安集微电子（上海）有限公司 一种化学机械抛光液
SG11201407520XA (en) * 2012-05-23 2014-12-30 Basf Se A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a specific non-ionic surfact
WO2014034358A1 (ja) * 2012-08-30 2014-03-06 日立化成株式会社 研磨剤、研磨剤セット及び基体の研磨方法
WO2014119301A1 (ja) * 2013-02-01 2014-08-07 株式会社フジミインコーポレーテッド 表面選択性研磨組成物
JP5820404B2 (ja) * 2013-02-05 2015-11-24 株式会社東芝 平坦化方法及び平坦化装置
JP6209845B2 (ja) * 2013-04-11 2017-10-11 日立化成株式会社 研磨液、研磨液セット及び基体の研磨方法
JP6252587B2 (ja) 2013-06-12 2017-12-27 日立化成株式会社 Ｃｍｐ用研磨液及び研磨方法
EP2826827B1 (en) * 2013-07-18 2019-06-12 Basf Se CMP composition comprising abrasive particles containing ceria
JP2016175949A (ja) * 2013-08-09 2016-10-06 コニカミノルタ株式会社 Ｃｍｐ用研磨液
US9279067B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
US9281210B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
CN104745085B (zh) * 2013-12-25 2018-08-21 安集微电子（上海）有限公司 一种用于钴阻挡层抛光的化学机械抛光液
CN106471090A (zh) * 2014-07-09 2017-03-01 日立化成株式会社 Cmp用研磨液和研磨方法
US20160053381A1 (en) * 2014-08-22 2016-02-25 Cabot Microelectronics Corporation Germanium chemical mechanical polishing
JP6456633B2 (ja) * 2014-09-05 2019-01-23 三菱重工サーマルシステムズ株式会社 ターボ冷凍機
US9530655B2 (en) * 2014-09-08 2016-12-27 Taiwan Semiconductor Manufacting Company, Ltd. Slurry composition for chemical mechanical polishing of Ge-based materials and devices
JP6396740B2 (ja) * 2014-09-29 2018-09-26 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
EP3323142B1 (en) * 2015-07-13 2024-08-28 CMC Materials LLC Methods and compositions for processing dielectric substrate
US10619075B2 (en) 2015-07-13 2020-04-14 Cabot Microelectronics Corporation Self-stopping polishing composition and method for bulk oxide planarization
JP6599176B2 (ja) 2015-08-28 2019-10-30 三菱重工サーマルシステムズ株式会社 ターボ冷凍装置
KR102670778B1 (ko) * 2015-09-03 2024-05-29 씨엠씨 머티리얼즈 엘엘씨 유전체 기판 처리를 위한 방법 및 조성물
KR102923279B1 (ko) * 2015-10-23 2026-02-05 니타 듀퐁 가부시키가이샤 연마용 조성물
KR102574851B1 (ko) * 2015-12-17 2023-09-06 솔브레인 주식회사 화학기계적 연마 슬러리 조성물
US10286518B2 (en) * 2017-01-31 2019-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
US20180244955A1 (en) 2017-02-28 2018-08-30 Versum Materials Us, Llc Chemical Mechanical Planarization of Films Comprising Elemental Silicon
JP7028592B2 (ja) * 2017-09-19 2022-03-02 株式会社フジミインコーポレーテッド 表面処理組成物、表面処理組成物の製造方法、表面処理方法、および半導体基板の製造方法
WO2019069370A1 (ja) * 2017-10-03 2019-04-11 日立化成株式会社 研磨液、研磨液セット、研磨方法及び欠陥抑制方法
JP7180756B2 (ja) * 2019-04-02 2022-11-30 昭和電工マテリアルズ株式会社 研磨液、研磨液セット、研磨方法及び欠陥抑制方法
US20220213434A1 (en) 2019-05-10 2022-07-07 The Regents Of The University Of California Modified pluripotent cells
US11162079B2 (en) 2019-05-10 2021-11-02 The Regents Of The University Of California Blood type O Rh-hypo-immunogenic pluripotent cells
CN113004798B (zh) * 2019-12-19 2024-04-12 安集微电子（上海）有限公司 一种化学机械抛光液
JP7596653B2 (ja) * 2020-06-29 2024-12-10 Ａｇｃ株式会社 研磨剤及び研磨方法
JP7849298B2 (ja) * 2020-09-29 2026-04-21 株式会社フジミインコーポレーテッド 研磨用組成物およびその利用
KR102731706B1 (ko) * 2021-09-10 2024-11-15 성균관대학교산학협력단 연마 조성물 및 이를 이용한 연마 방법
CN114350264B (zh) * 2022-02-18 2023-06-02 河北工业大学 一种用于钴互连结构钴膜cmp粗抛的碱性抛光液及其制备方法
CN115851134B (zh) * 2022-10-27 2024-09-10 万华化学集团电子材料有限公司 一种高精度硅片抛光组合物及其应用
CN119039991B (zh) * 2024-10-30 2025-06-03 西安蓝桥新能源科技有限公司 一种用于硅片碱刻蚀抛光的添加剂、反应液及方法与应用
CN121450242B (zh) * 2026-01-04 2026-06-30 珠海基石科技有限公司 平整化组合物及其制备方法、应用、平整化工艺和电子器件

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030228762A1 (en) * 2002-06-07 2003-12-11 Cabot Microelectronics Corporation CMP compositions for low-k dielectric materials
US20040152309A1 (en) * 2003-02-03 2004-08-05 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US20080111101A1 (en) * 2006-11-09 2008-05-15 Jason Keleher Compositions and methods for CMP of low-k-dielectric materials

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MY114512A (en) 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
US6022264A (en) 1997-02-10 2000-02-08 Rodel Inc. Polishing pad and methods relating thereto
ATE474899T1 (de) 1998-10-23 2010-08-15 Fujifilm Electronic Materials Eine chemisch-mechanisch polierende aufschlämmung,eine beschleunigerlösung enthaltend
JP2001007059A (ja) * 1999-06-18 2001-01-12 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
US6786945B2 (en) 2001-02-20 2004-09-07 Hitachi Chemical Co., Ltd. Polishing compound and method for polishing substrate
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US6936543B2 (en) * 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
JP2004247605A (ja) * 2003-02-14 2004-09-02 Toshiba Corp Ｃｍｐ用スラリーおよび半導体装置の製造方法
JP4267546B2 (ja) 2004-04-06 2009-05-27 花王株式会社 基板の製造方法
JP2006269910A (ja) * 2005-03-25 2006-10-05 Fuji Photo Film Co Ltd 金属用研磨液及びこれを用いた研磨方法
US7662753B2 (en) * 2005-05-12 2010-02-16 Halliburton Energy Services, Inc. Degradable surfactants and methods for use
TWI437083B (zh) * 2006-07-28 2014-05-11 昭和電工股份有限公司 研磨組成物
KR100814416B1 (ko) * 2006-09-28 2008-03-18 삼성전자주식회사 고 평탄화 슬러리 조성물 및 이를 이용한 화학 기계적 연마방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030228762A1 (en) * 2002-06-07 2003-12-11 Cabot Microelectronics Corporation CMP compositions for low-k dielectric materials
US20040152309A1 (en) * 2003-02-03 2004-08-05 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US20080111101A1 (en) * 2006-11-09 2008-05-15 Jason Keleher Compositions and methods for CMP of low-k-dielectric materials

Also Published As

Publication number Publication date
US8597540B2 (en) 2013-12-03
WO2010014180A3 (en) 2010-04-22
CN102149783B (zh) 2013-06-12
JP2011530166A (ja) 2011-12-15
IL210029A0 (en) 2011-02-28
EP2331649A2 (en) 2011-06-15
CN102149783A (zh) 2011-08-10
JP2014209662A (ja) 2014-11-06
JP5952352B2 (ja) 2016-07-13
TW201011826A (en) 2010-03-16
US8247327B2 (en) 2012-08-21
KR101396000B1 (ko) 2014-05-16
IL210029A (en) 2015-07-30
JP5628802B2 (ja) 2014-11-19
US20100029181A1 (en) 2010-02-04
SG189801A1 (en) 2013-05-31
MY149727A (en) 2013-10-14
EP2331649A4 (en) 2013-07-03
EP2331649B1 (en) 2018-06-13
WO2010014180A2 (en) 2010-02-04
KR20110053438A (ko) 2011-05-23
US20120280170A1 (en) 2012-11-08

Similar Documents

Publication Publication Date Title
JP5952352B2 (ja) シリコン含有基材を研磨するための方法及び組成物
JP4927526B2 (ja) 二酸化ケイ素層及び窒化ケイ素層を有する基材の研磨方法、及び化学機械的研磨系
US9850402B2 (en) CMP compositions and methods for selective removal of silicon nitride
CN103492519B (zh) 用于选择性抛光氮化硅材料的组合物及方法
JP2006520530A5 (enExample)
CN103080256A (zh) 用于化学机械抛光包含氧化硅电介质和多晶硅膜的衬底的含水抛光组合物和方法
JP6603309B2 (ja) ゲルマニウムの化学機械研磨
KR102005254B1 (ko) 기판의 폴리싱 방법
JP2026069585A (ja) 研磨組成物及びその使用方法
KR100851235B1 (ko) 평탄도 개선제를 함유한 화학기계적 연마 조성물 및 이를이용한 연마 방법
WO2015019911A1 (ja) Ｃｍｐ用研磨液
JP7860145B2 (ja) 研磨用組成物及びその使用方法
WO2026079145A1 (ja) 砥粒の製造方法、化学機械研磨用組成物および研磨方法