CN102149783B - 用于抛光含硅基材的方法和组合物 - Google Patents

用于抛光含硅基材的方法和组合物 Download PDF

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Publication number
CN102149783B
CN102149783B CN200980130098XA CN200980130098A CN102149783B CN 102149783 B CN102149783 B CN 102149783B CN 200980130098X A CN200980130098X A CN 200980130098XA CN 200980130098 A CN200980130098 A CN 200980130098A CN 102149783 B CN102149783 B CN 102149783B
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China
Prior art keywords
polishing
active agent
acid
cmp
tensio
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CN200980130098XA
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Chinese (zh)
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CN102149783A (zh
Inventor
弗朗西斯科.德雷吉塞索罗
陈湛
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CMC Materials LLC
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Cabot Microelectronics Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN200980130098XA 2008-07-30 2009-07-23 用于抛光含硅基材的方法和组合物 Active CN102149783B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/221,023 2008-07-30
US12/221,023 US8247327B2 (en) 2008-07-30 2008-07-30 Methods and compositions for polishing silicon-containing substrates
PCT/US2009/004281 WO2010014180A2 (en) 2008-07-30 2009-07-23 Methods and compositions for polishing silicon-containing substrates

Publications (2)

Publication Number Publication Date
CN102149783A CN102149783A (zh) 2011-08-10
CN102149783B true CN102149783B (zh) 2013-06-12

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Family Applications (1)

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CN200980130098XA Active CN102149783B (zh) 2008-07-30 2009-07-23 用于抛光含硅基材的方法和组合物

Country Status (10)

Country Link
US (2) US8247327B2 (enExample)
EP (1) EP2331649B1 (enExample)
JP (2) JP5628802B2 (enExample)
KR (1) KR101396000B1 (enExample)
CN (1) CN102149783B (enExample)
IL (1) IL210029A (enExample)
MY (1) MY149727A (enExample)
SG (1) SG189801A1 (enExample)
TW (1) TWI398917B (enExample)
WO (1) WO2010014180A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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CN107851568A (zh) * 2015-07-13 2018-03-27 嘉柏微电子材料股份公司 用于加工介电基板的方法及组合物

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JP5492603B2 (ja) * 2010-03-02 2014-05-14 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP5648567B2 (ja) * 2010-05-07 2015-01-07 日立化成株式会社 Ｃｍｐ用研磨液及びこれを用いた研磨方法
EP2625236B1 (en) * 2010-10-07 2017-12-13 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers
SG191909A1 (en) * 2011-01-11 2013-08-30 Cabot Microelectronics Corp Metal-passivating cmp compositions and methods
CN102816530B (zh) * 2011-06-08 2016-01-27 安集微电子（上海）有限公司 一种化学机械抛光液
SG11201407520XA (en) * 2012-05-23 2014-12-30 Basf Se A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a specific non-ionic surfact
WO2014034358A1 (ja) * 2012-08-30 2014-03-06 日立化成株式会社 研磨剤、研磨剤セット及び基体の研磨方法
WO2014119301A1 (ja) * 2013-02-01 2014-08-07 株式会社フジミインコーポレーテッド 表面選択性研磨組成物
JP5820404B2 (ja) * 2013-02-05 2015-11-24 株式会社東芝 平坦化方法及び平坦化装置
JP6209845B2 (ja) * 2013-04-11 2017-10-11 日立化成株式会社 研磨液、研磨液セット及び基体の研磨方法
JP6252587B2 (ja) 2013-06-12 2017-12-27 日立化成株式会社 Ｃｍｐ用研磨液及び研磨方法
EP2826827B1 (en) * 2013-07-18 2019-06-12 Basf Se CMP composition comprising abrasive particles containing ceria
JP2016175949A (ja) * 2013-08-09 2016-10-06 コニカミノルタ株式会社 Ｃｍｐ用研磨液
US9279067B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
US9281210B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
CN104745085B (zh) * 2013-12-25 2018-08-21 安集微电子（上海）有限公司 一种用于钴阻挡层抛光的化学机械抛光液
CN106471090A (zh) * 2014-07-09 2017-03-01 日立化成株式会社 Cmp用研磨液和研磨方法
US20160053381A1 (en) * 2014-08-22 2016-02-25 Cabot Microelectronics Corporation Germanium chemical mechanical polishing
JP6456633B2 (ja) * 2014-09-05 2019-01-23 三菱重工サーマルシステムズ株式会社 ターボ冷凍機
US9530655B2 (en) * 2014-09-08 2016-12-27 Taiwan Semiconductor Manufacting Company, Ltd. Slurry composition for chemical mechanical polishing of Ge-based materials and devices
JP6396740B2 (ja) * 2014-09-29 2018-09-26 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
US10619075B2 (en) 2015-07-13 2020-04-14 Cabot Microelectronics Corporation Self-stopping polishing composition and method for bulk oxide planarization
JP6599176B2 (ja) 2015-08-28 2019-10-30 三菱重工サーマルシステムズ株式会社 ターボ冷凍装置
KR102670778B1 (ko) * 2015-09-03 2024-05-29 씨엠씨 머티리얼즈 엘엘씨 유전체 기판 처리를 위한 방법 및 조성물
KR102923279B1 (ko) * 2015-10-23 2026-02-05 니타 듀퐁 가부시키가이샤 연마용 조성물
KR102574851B1 (ko) * 2015-12-17 2023-09-06 솔브레인 주식회사 화학기계적 연마 슬러리 조성물
US10286518B2 (en) * 2017-01-31 2019-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
US20180244955A1 (en) 2017-02-28 2018-08-30 Versum Materials Us, Llc Chemical Mechanical Planarization of Films Comprising Elemental Silicon
JP7028592B2 (ja) * 2017-09-19 2022-03-02 株式会社フジミインコーポレーテッド 表面処理組成物、表面処理組成物の製造方法、表面処理方法、および半導体基板の製造方法
WO2019069370A1 (ja) * 2017-10-03 2019-04-11 日立化成株式会社 研磨液、研磨液セット、研磨方法及び欠陥抑制方法
JP7180756B2 (ja) * 2019-04-02 2022-11-30 昭和電工マテリアルズ株式会社 研磨液、研磨液セット、研磨方法及び欠陥抑制方法
US20220213434A1 (en) 2019-05-10 2022-07-07 The Regents Of The University Of California Modified pluripotent cells
US11162079B2 (en) 2019-05-10 2021-11-02 The Regents Of The University Of California Blood type O Rh-hypo-immunogenic pluripotent cells
CN113004798B (zh) * 2019-12-19 2024-04-12 安集微电子（上海）有限公司 一种化学机械抛光液
JP7596653B2 (ja) * 2020-06-29 2024-12-10 Ａｇｃ株式会社 研磨剤及び研磨方法
JP7849298B2 (ja) * 2020-09-29 2026-04-21 株式会社フジミインコーポレーテッド 研磨用組成物およびその利用
KR102731706B1 (ko) * 2021-09-10 2024-11-15 성균관대학교산학협력단 연마 조성물 및 이를 이용한 연마 방법
CN114350264B (zh) * 2022-02-18 2023-06-02 河北工业大学 一种用于钴互连结构钴膜cmp粗抛的碱性抛光液及其制备方法
CN115851134B (zh) * 2022-10-27 2024-09-10 万华化学集团电子材料有限公司 一种高精度硅片抛光组合物及其应用
CN119039991B (zh) * 2024-10-30 2025-06-03 西安蓝桥新能源科技有限公司 一种用于硅片碱刻蚀抛光的添加剂、反应液及方法与应用
CN121450242B (zh) * 2026-01-04 2026-06-30 珠海基石科技有限公司 平整化组合物及其制备方法、应用、平整化工艺和电子器件

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Also Published As

Publication number Publication date
US8597540B2 (en) 2013-12-03
WO2010014180A3 (en) 2010-04-22
JP2011530166A (ja) 2011-12-15
IL210029A0 (en) 2011-02-28
EP2331649A2 (en) 2011-06-15
CN102149783A (zh) 2011-08-10
JP2014209662A (ja) 2014-11-06
JP5952352B2 (ja) 2016-07-13
TW201011826A (en) 2010-03-16
US8247327B2 (en) 2012-08-21
KR101396000B1 (ko) 2014-05-16
IL210029A (en) 2015-07-30
JP5628802B2 (ja) 2014-11-19
US20100029181A1 (en) 2010-02-04
SG189801A1 (en) 2013-05-31
MY149727A (en) 2013-10-14
EP2331649A4 (en) 2013-07-03
EP2331649B1 (en) 2018-06-13
WO2010014180A2 (en) 2010-02-04
KR20110053438A (ko) 2011-05-23
TWI398917B (zh) 2013-06-11
US20120280170A1 (en) 2012-11-08

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