SG11201407520XA - A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a specific non-ionic surfact - Google Patents

A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a specific non-ionic surfact

Info

Publication number
SG11201407520XA
SG11201407520XA SG11201407520XA SG11201407520XA SG11201407520XA SG 11201407520X A SG11201407520X A SG 11201407520XA SG 11201407520X A SG11201407520X A SG 11201407520XA SG 11201407520X A SG11201407520X A SG 11201407520XA SG 11201407520X A SG11201407520X A SG 11201407520XA
Authority
SG
Singapore
Prior art keywords
international
cmp
basf
manufacture
semiconductor devices
Prior art date
Application number
SG11201407520XA
Inventor
Bastian Marten Noller
Christophe Gillot
Diana Franz
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of SG11201407520XA publication Critical patent/SG11201407520XA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0118—Processes for the planarization of structures
    • B81C2201/0121—Processes for the planarization of structures involving addition of material followed by removal of parts of said material, i.e. subtractive planarization
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0118—Processes for the planarization of structures
    • B81C2201/0123—Selective removal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0118—Processes for the planarization of structures
    • B81C2201/0126—Processes for the planarization of structures not provided for in B81C2201/0119 - B81C2201/0125

Abstract

(12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau „ (10) International Publication Number (43) International Publication Date ^ ^ WO 2013/175396 A1 28 November 2013 (28.11.2013) WIPO I PCT (51) International Patent Classification: C09G1/02 (2006.01) H01L 21/306 (2006.01) H01L 21/304 (2006.01) (21) International Application Number: (22) International Filing Date: (25) Filing Language: (26) Publication Language: PCT/IB2013/054169 21 May 2013 (21.05.2013) English (30) Priority Data: 61/650502 23 May 2012 (23.05.2012) English US (71) Applicant: BASF SE [DE/DE]; 67056 Ludwigshafen (DE). (71) Applicant (for CYonly): BASF SCHWEIZ AG [CH/CH]; Klybeckstrasse 141, 4057 Basel (CH). (71) Applicant (for MN only): BASF (CHINA) COMPANY LIMITED [CN/CN]; 300 Jiangxinsha Road, Shanghai, 200137 (CN). (72) Inventor: LI, Yuzhuo (deceased). (72) Inventors: NOLLER, Bastian Marten; Einhauser Land- straBe 50, 64653 Lorsch (DE). GILLOT, Christophe; Bergstraat 37, 3360 Bierbeek (BE). FRANZ, Diana; Gart- nerstraBe 41a, 67105 Schifferstadt (DE). (74) Common Representative: BASF SE; 67056 Ludwig­ shafen (DE). (81) Designated States (unless otherwise indicated, for every kind of national protection available)'. AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available)'. ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3)) — before the expiration of the time limit for amending the claims and to be republished in the event of receipt of amendments (Rule 48.2(h)) \o o\ m i> i-H cn i-H o CJ o & (54) Title: A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING (CMP) OF III-V MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC NON-IONIC SUR­ FACTANT (57) Abstract: A process for the manufacture of semiconductor devices comprising the chemical-mechanical polishing of substrate a or layer containing at least one 111-V material in the presence of chemical-mechanical a polishing composition (Ql) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one amphiphilic non-ionic surfactant having (bl) at least one hydrophobic group; and (b2) at least one hydrophilic group selected from the group consisting of polyoxyalkylene groups comprising (b22) oxyalkylene monomer units other than oxyethylene monomer units; and (M) an aqueous medium.
SG11201407520XA 2012-05-23 2013-05-21 A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a specific non-ionic surfact SG11201407520XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261650502P 2012-05-23 2012-05-23
PCT/IB2013/054169 WO2013175396A1 (en) 2012-05-23 2013-05-21 A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a specific non-ionic surfactant

Publications (1)

Publication Number Publication Date
SG11201407520XA true SG11201407520XA (en) 2014-12-30

Family

ID=49623243

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201407520XA SG11201407520XA (en) 2012-05-23 2013-05-21 A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a specific non-ionic surfact

Country Status (8)

Country Link
US (1) US9416298B2 (en)
EP (1) EP2852644A4 (en)
JP (1) JP2015523716A (en)
KR (1) KR20150014982A (en)
CN (1) CN104364331A (en)
SG (1) SG11201407520XA (en)
TW (1) TWI596174B (en)
WO (1) WO2013175396A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9646842B1 (en) 2015-10-14 2017-05-09 International Business Machines Corporation Germanium smoothing and chemical mechanical planarization processes
US9646841B1 (en) 2015-10-14 2017-05-09 International Business Machines Corporation Group III arsenide material smoothing and chemical mechanical planarization processes
US9916985B2 (en) 2015-10-14 2018-03-13 International Business Machines Corporation Indium phosphide smoothing and chemical mechanical planarization processes
US10759969B2 (en) 2016-03-25 2020-09-01 Fujimi Incorporated Polishing composition, polishing method, and method for manufacturing semiconductor substrate

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2531431C3 (en) * 1975-07-14 1979-03-01 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Polishing agents for producing haze-free semiconductor surfaces
JP2002025954A (en) 2000-07-07 2002-01-25 Hitachi Cable Ltd Grinding method of semiconductor crystal wafer
JP2003100671A (en) * 2001-09-20 2003-04-04 Hitachi Cable Ltd Semiconductor crystal wafer and method of polishing the same
JP2003124159A (en) * 2001-10-16 2003-04-25 Asahi Denka Kogyo Kk Aqueous lapping liquid and aqueous lapping compound
JP4850167B2 (en) * 2001-10-31 2012-01-11 日立化成工業株式会社 Polishing liquid and polishing method
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
JP2004297035A (en) * 2003-03-13 2004-10-21 Hitachi Chem Co Ltd Abrasive agent, polishing method, and manufacturing method of electronic component
US7387970B2 (en) * 2003-05-07 2008-06-17 Freescale Semiconductor, Inc. Method of using an aqueous solution and composition thereof
KR100640600B1 (en) * 2003-12-12 2006-11-01 삼성전자주식회사 Slurry compositions, and fabrication method of semiconductor device including CMPchemical mechanical polishing process using the same
DE102004034646A1 (en) 2004-07-16 2006-02-16 Basf Ag Method for accelerating the wetting in paints
JP5105869B2 (en) * 2006-04-27 2012-12-26 花王株式会社 Polishing liquid composition
CN101081966A (en) 2006-06-02 2007-12-05 天津晶岭电子材料科技有限公司 Polishing liquid for gallium arsenide wafer and preparation method thereof
CN101096571A (en) 2006-06-30 2008-01-02 天津晶岭电子材料科技有限公司 Polishing liquid for glass material and preparation method thereof
TWI402335B (en) * 2006-09-08 2013-07-21 Kao Corp Polishing composition
KR20080037802A (en) 2006-10-27 2008-05-02 삼성전자주식회사 Slurry composition and method for polishing using the slurry composition
CN101591509B (en) 2008-05-30 2013-05-01 安集微电子（上海）有限公司 Polishing slurry for polishing metallic-chemical machinery and application thereof
JP5403956B2 (en) * 2008-07-01 2014-01-29 花王株式会社 Polishing liquid composition
JP5467804B2 (en) * 2008-07-11 2014-04-09 富士フイルム株式会社 Polishing liquid for silicon nitride and polishing method
US8247327B2 (en) * 2008-07-30 2012-08-21 Cabot Microelectronics Corporation Methods and compositions for polishing silicon-containing substrates
KR20120023043A (en) * 2009-06-09 2012-03-12 히다치 가세고교 가부시끼가이샤 Abrasive slurry, abrasive set, and method for grinding substrate
RU2589482C2 (en) * 2010-10-07 2016-07-10 Басф Се Aqueous polishing composition and method for chemical-mechanical polishing of substrates, having structured or unstructured dielectric layers with low dielectric constant

Also Published As

Publication number Publication date
US9416298B2 (en) 2016-08-16
JP2015523716A (en) 2015-08-13
CN104364331A (en) 2015-02-18
KR20150014982A (en) 2015-02-09
TWI596174B (en) 2017-08-21
EP2852644A1 (en) 2015-04-01
US20150175845A1 (en) 2015-06-25
WO2013175396A1 (en) 2013-11-28
EP2852644A4 (en) 2016-04-06
TW201402736A (en) 2014-01-16

Similar Documents

Publication Publication Date Title
SG11201805449PA (en) Methods of making chimeric antigen receptor -expressing cells
SG11201808751SA (en) T cell receptors
SG11201807252QA (en) Anti-lag-3 antibodies
SG11201805950UA (en) Self-assembled nanostructures and separation membranes comprising aquaporin water channels and methods of making and using them
SG11201900635QA (en) Chimeric antigen receptors targeting bcma and methods of use thereof
SG11201806018YA (en) Protein cage-stabilized pickering emulsions and the use thereof
SG11201804041QA (en) High conductivity graphane-metal composite and methods of manufacture
SG11201808990QA (en) Compositions for topical application of compounds
SG11201909322VA (en) Treatment of asthma with anti-tslp antibody
SG11201900772YA (en) Gene editing of car-t cells for the treatment of t cell malignancies with chimeric antigen receptors
SG11201408451WA (en) Use of vacuum chucks to hold a wafer or wafer sub-stack
SG11201407812SA (en) Methods for reducing levels of protein-contaminant complexes and aggregates in protein preparations by treatment with electropositive organic additives
SG11201407520XA (en) A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a specific non-ionic surfact
SG11201407801VA (en) Methods for use of mixed multifunctional surfaces for reducing aggregate content in protein preparations
SG11201408785VA (en) Chemical mechanical polishing composition comprising non-ionic surfactant and aromatic compound comprising at least one acid group
SG11201900634VA (en) Chimeric antigen receptor
SG11201408833YA (en) Chemical mechanical polishing composition comprising non-ionic surfactant and carbonate salt
SG11201403106SA (en) Anti-phf-tau antibodies and their uses
SG11201408312UA (en) Method of preparing a composition based on hyaluronic acid
SG11201406903SA (en) Cell culture compositions and methods for polypeptide production
SG11201408375RA (en) Transfers in multiple-deck elevator systems
SG11201908075UA (en) A microneedle device
SG11201407506SA (en) Fluid handling containers, systems, and related methods
SG11201807817SA (en) High aspect ratio layered double hydroxide materials and methods for preparation thereof
SG11201804185VA (en) Features on a porous membrane