SG11201408833YA - Chemical mechanical polishing composition comprising non-ionic surfactant and carbonate salt - Google Patents

Chemical mechanical polishing composition comprising non-ionic surfactant and carbonate salt

Info

Publication number
SG11201408833YA
SG11201408833YA SG11201408833YA SG11201408833YA SG11201408833YA SG 11201408833Y A SG11201408833Y A SG 11201408833YA SG 11201408833Y A SG11201408833Y A SG 11201408833YA SG 11201408833Y A SG11201408833Y A SG 11201408833YA SG 11201408833Y A SG11201408833Y A SG 11201408833YA
Authority
SG
Singapore
Prior art keywords
international
mechanical polishing
chemical mechanical
basf
ionic surfactant
Prior art date
Application number
SG11201408833YA
Inventor
Robert Reichardt
Michael Lauter
Wei Lan William Chiu
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of SG11201408833YA publication Critical patent/SG11201408833YA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

(12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 9 January 2014 (09.01.2014) WIPOIPCT (10) International Publication Number WO 2014/006526 A3 (51) International Patent Classification: C09G1/02 (2006.01) COM 3/14 (2006.01) (21) International Application Number: (22) International Filing Date: (25) Filing Language: (26) Publication Language: PCT/IB2013/055102 21 June 2013 (21.06.2013) English English (30) Priority Data: 12175331.3 6 July 2012 (06.07.2012) EP (71) Applicant: BASF SE [DE/DE]; 67056 Ludwigshafen (DE). (71) Applicant (for CYonly): BASF SCHWEIZ AG [CH/CH]; Klybeckstrasse 141, 4057 Basel (CH). (71) Applicant (for MN only): BASF (CHINA) COMPANY LIMITED [CN/CN]; 300 Jiangxinsha Road, Shanghai, 200137 (CN). (72) Inventor: REICHARDT, Robert; T6 12, 68161 Man­ nheim (DE). (72) Inventor: LI, Yuzhuo (deceased). (72) Inventors: LAUTER, Michael; Gontardstrasse 6, 68163 Mannheim (DE). CHIU, Wei Lan William; 9F-11, No.55, Loyang St., Taipei City (TW). (74) Common Representative: BASF SE; 67056 Ludwig­ shafen (DE). (81) Designated States (unless otherwise indicated, for every kind of national protection available)'. AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available)'. ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3)) — before the expiration of the time limit for amending the claims and to be republished in the event of receipt of amendments (Rule 48.2(h)) — with information concerning refusal to authorize the recti­ fication of an obvious mistake under Rule 91.1 (Rule 91.3(d)) (88) Date of publication of the international search report: 27 February 2014 CJ o o o CJ O & (54) Title: CHEMICAL MECHANICAL POLISHING COMPOSITION COMPRISING NON-IONIC SURFACTANT AND CAR­ BONATE SALT (57) Abstract: A chemical mechanical polishing composition comprising: (A) Inorganic particles, organic particles, or a mixture or composite thereof, wherein the particles are cocoon-shaped, (B) non-ionic surfactant, a (C) a carbonate or hydrogen carbonate salt, (D) an alcohol, and (M) an aqueous medium. A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of substrate used a in the semiconductor industry in the presence of a CMP composition and the use of CMP composition thereof are also provided.
SG11201408833YA 2012-07-06 2013-06-21 Chemical mechanical polishing composition comprising non-ionic surfactant and carbonate salt SG11201408833YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP12175331.3A EP2682440A1 (en) 2012-07-06 2012-07-06 A chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and a carbonate salt
PCT/IB2013/055102 WO2014006526A2 (en) 2012-07-06 2013-06-21 A chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and a carbonate salt

Publications (1)

Publication Number Publication Date
SG11201408833YA true SG11201408833YA (en) 2015-01-29

Family

ID=46458352

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201408833YA SG11201408833YA (en) 2012-07-06 2013-06-21 Chemical mechanical polishing composition comprising non-ionic surfactant and carbonate salt

Country Status (10)

Country Link
EP (2) EP2682440A1 (en)
JP (1) JP6125630B2 (en)
KR (1) KR20150036410A (en)
CN (2) CN108178988A (en)
IL (1) IL236045A (en)
MY (1) MY176981A (en)
RU (1) RU2643541C9 (en)
SG (1) SG11201408833YA (en)
TW (1) TWI589654B (en)
WO (1) WO2014006526A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI775722B (en) * 2014-12-22 2022-09-01 德商巴斯夫歐洲公司 Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and/or cobalt alloy comprising substrates
JP7010229B2 (en) * 2016-09-21 2022-01-26 昭和電工マテリアルズ株式会社 Slurry and polishing method
EP3894496A1 (en) * 2018-12-12 2021-10-20 Basf Se Chemical mechanical polishing of substrates containing copper and ruthenium
US20220064485A1 (en) * 2018-12-12 2022-03-03 Basf Se Chemical mechanical polishing of substrates containing copper and ruthenium
WO2020120522A1 (en) * 2018-12-12 2020-06-18 Basf Se Chemical mechanical polishing of substrates containing copper and ruthenium
US20200308447A1 (en) * 2019-03-29 2020-10-01 Fujimi Corporation Compositions for polishing cobalt and low-k material surfaces
CN113122143B (en) * 2019-12-31 2024-03-08 安集微电子（上海）有限公司 Chemical mechanical polishing solution and application thereof in copper polishing

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3563017B2 (en) * 2000-07-19 2004-09-08 ロデール・ニッタ株式会社 Polishing composition, method for producing polishing composition and polishing method
JP2003100671A (en) 2001-09-20 2003-04-04 Hitachi Cable Ltd Semiconductor crystal wafer and method of polishing the same
WO2004015497A1 (en) * 2002-08-07 2004-02-19 Mitsubishi Chemical Corporation Image forming material having bluish-violet laser-photosensitive resist material layer and resist image forming method therefor
JP3895269B2 (en) * 2002-12-09 2007-03-22 富士通株式会社 Resist pattern forming method, semiconductor device, and manufacturing method thereof
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
JP2005268665A (en) * 2004-03-19 2005-09-29 Fujimi Inc Polishing composition
JP2007103463A (en) * 2005-09-30 2007-04-19 Sumitomo Electric Ind Ltd POLISHING SLURRY, SURFACE TREATMENT METHOD OF GaxIn1-xAsyP1-y CRYSTAL, AND GaxIn1-xAsyP1-y CRYSTAL SUBSTRATE
JP2007207983A (en) * 2006-02-01 2007-08-16 Fujifilm Corp Polishing method
JP2007300070A (en) * 2006-04-05 2007-11-15 Nippon Chem Ind Co Ltd Etchant composition for polishing semiconductor wafer, manufacturing method of polishing composition using same, and polishing method
JP2008124222A (en) * 2006-11-10 2008-05-29 Fujifilm Corp Polishing solution
US20080148652A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Compositions for chemical mechanical planarization of copper
JP5121273B2 (en) * 2007-03-29 2013-01-16 富士フイルム株式会社 Polishing liquid for metal and polishing method
CN101280158A (en) * 2007-04-06 2008-10-08 安集微电子（上海）有限公司 Chemico-mechanical polishing slurry for polysilicon
JP5441362B2 (en) 2008-05-30 2014-03-12 富士フイルム株式会社 Polishing liquid and polishing method
JP5314329B2 (en) 2008-06-12 2013-10-16 富士フイルム株式会社 Polishing liquid
JP2011171689A (en) * 2009-07-07 2011-09-01 Kao Corp Polishing liquid composition for silicon wafer
JP2011205058A (en) * 2009-12-17 2011-10-13 Rohm & Haas Electronic Materials Llc Improved method of texturing semiconductor substrate
US8273142B2 (en) * 2010-09-02 2012-09-25 Cabot Microelectronics Corporation Silicon polishing compositions with high rate and low defectivity
SG189327A1 (en) * 2010-10-07 2013-05-31 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers
JP6005521B2 (en) * 2010-11-08 2016-10-12 株式会社フジミインコーポレーテッド Polishing composition and semiconductor substrate polishing method using the same
EP2665792B1 (en) * 2011-01-21 2020-04-22 Cabot Microelectronics Corporation Silicon polishing compositions with improved psd performance
CN102408837B (en) * 2011-11-22 2014-06-04 清华大学 Polishing composition capable of improving silicon wafer polishing accuracy and preparation method thereof

Also Published As

Publication number Publication date
TWI589654B (en) 2017-07-01
EP2870212A4 (en) 2016-03-30
RU2643541C9 (en) 2018-03-16
EP2870212B1 (en) 2018-10-17
WO2014006526A3 (en) 2014-02-27
RU2015103813A (en) 2016-08-27
RU2643541C2 (en) 2018-02-02
JP2015528835A (en) 2015-10-01
CN108178988A (en) 2018-06-19
IL236045A (en) 2017-11-30
CN104487529A (en) 2015-04-01
KR20150036410A (en) 2015-04-07
WO2014006526A2 (en) 2014-01-09
JP6125630B2 (en) 2017-05-10
TW201406890A (en) 2014-02-16
IL236045A0 (en) 2015-01-29
EP2870212A2 (en) 2015-05-13
EP2682440A1 (en) 2014-01-08
MY176981A (en) 2020-08-31

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