SG11201501334RA - Polishing agent, polishing agent set and method for polishing base - Google Patents

Polishing agent, polishing agent set and method for polishing base

Info

Publication number
SG11201501334RA
SG11201501334RA SG11201501334RA SG11201501334RA SG11201501334RA SG 11201501334R A SG11201501334R A SG 11201501334RA SG 11201501334R A SG11201501334R A SG 11201501334RA SG 11201501334R A SG11201501334R A SG 11201501334RA SG 11201501334R A SG11201501334R A SG 11201501334RA
Authority
SG
Singapore
Prior art keywords
polishing
polishing agent
base
agent
agent set
Prior art date
Application number
SG11201501334RA
Inventor
Toshiaki Akutsu
Hisataka Minami
Tomohiro Iwano
Koji Fujisaki
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of SG11201501334RA publication Critical patent/SG11201501334RA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01FCOMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00Compounds of rare earth metals
    • C01F17/20Compounds containing only rare earth metals as the metal element
    • C01F17/206Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • C01F17/224Oxides or hydroxides of lanthanides
    • C01F17/235Cerium oxides or hydroxides
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1409Abrasive particles per se
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/31051Planarisation of the insulating layers
    • H01L21/31053Planarisation of the insulating layers involving a dielectric removal step
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/80Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/84Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/64Nanometer sized, i.e. from 1-100 nanometer

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201501334RA 2012-08-30 2013-07-30 Polishing agent, polishing agent set and method for polishing base SG11201501334RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012190033 2012-08-30
PCT/JP2013/070619 WO2014034358A1 (en) 2012-08-30 2013-07-30 Polishing agent, polishing agent set and method for polishing base

Publications (1)

Publication Number Publication Date
SG11201501334RA true SG11201501334RA (en) 2015-05-28

Family

ID=50183178

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201501334RA SG11201501334RA (en) 2012-08-30 2013-07-30 Polishing agent, polishing agent set and method for polishing base

Country Status (7)

Country Link
US (1) US9163162B2 (en)
JP (1) JP6107826B2 (en)
KR (1) KR102137293B1 (en)
CN (1) CN104582899B (en)
SG (1) SG11201501334RA (en)
TW (1) TWI565793B (en)
WO (1) WO2014034358A1 (en)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014129408A1 (en) * 2013-02-21 2014-08-28 株式会社フジミインコーポレーテッド Polishing composition and method for manufacturing polished article
WO2014199739A1 (en) * 2013-06-12 2014-12-18 日立化成株式会社 Polishing liquid for cmp, and polishing method
DE102014111781B4 (en) * 2013-08-19 2022-08-11 Korea Atomic Energy Research Institute Process for the electrochemical production of a silicon layer
KR20160054466A (en) 2013-09-10 2016-05-16 히타치가세이가부시끼가이샤 Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate
KR102138406B1 (en) * 2013-12-26 2020-07-27 히타치가세이가부시끼가이샤 Abrasive, abrasive set, and method for polishing substrate
JP6569191B2 (en) * 2014-06-10 2019-09-04 日立化成株式会社 Abrasive, abrasive set, and substrate polishing method
WO2016006553A1 (en) * 2014-07-09 2016-01-14 日立化成株式会社 Cmp polishing liquid, and polishing method
KR102434586B1 (en) * 2015-08-06 2022-08-23 주식회사 케이씨텍 Multi-function polishing slurry composition
KR102628333B1 (en) * 2015-09-09 2024-01-22 가부시끼가이샤 레조낙 Polishing liquid, polishing liquid set, and base polishing method
KR102509260B1 (en) * 2015-11-20 2023-03-14 삼성디스플레이 주식회사 Polishing slurry for silicon, method of polishing polysilicon and method of manufacturing a thin film transistor substrate
KR101827366B1 (en) * 2016-05-16 2018-02-09 주식회사 케이씨텍 Slurry composition for high step height polishing
KR102508181B1 (en) * 2016-12-28 2023-03-09 니타 듀퐁 가부시키가이샤 Polishing composition and polishing method
WO2018179061A1 (en) * 2017-03-27 2018-10-04 日立化成株式会社 Polishing liquid, polishing liquid set, and polishing method
JP6708994B2 (en) * 2017-03-27 2020-06-10 日立化成株式会社 Slurry and polishing method
US11655394B2 (en) * 2017-08-09 2023-05-23 Resonac Corporation Polishing solution and polishing method
US10711158B2 (en) * 2017-09-28 2020-07-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of using them
WO2019064524A1 (en) * 2017-09-29 2019-04-04 日立化成株式会社 Polishing solution, polishing solution set, and polishing method
JP7421855B2 (en) * 2018-03-02 2024-01-25 Agc株式会社 Abrasives, polishing methods, and additives for polishing
US11572490B2 (en) 2018-03-22 2023-02-07 Showa Denko Materials Co., Ltd. Polishing liquid, polishing liquid set, and polishing method
WO2020021680A1 (en) 2018-07-26 2020-01-30 日立化成株式会社 Slurry and polishing method
JP7176225B2 (en) * 2018-04-27 2022-11-22 昭和電工マテリアルズ株式会社 Polishing liquid, polishing liquid set and polishing method
WO2020100985A1 (en) * 2018-11-15 2020-05-22 花王株式会社 Polishing liquid composition
CN113004797B (en) * 2019-12-19 2024-04-12 安集微电子(上海)有限公司 Chemical mechanical polishing solution
US20230094224A1 (en) * 2020-01-16 2023-03-30 Showa Denko Materials Co., Ltd. Polishing agent, stock solution for polishing agent, and polishing method
US20230203342A1 (en) * 2021-01-06 2023-06-29 Showa Denko Materials Co., Ltd. Polishing liquid, polishing liquid set, and polishing method
TWI771983B (en) * 2021-04-14 2022-07-21 國立中山大學 Defect detection method of gan high electron mobility transistor
CN113563802A (en) * 2021-08-12 2021-10-29 南昌大学 Preparation method of nano cerium-based polishing slurry

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3278532B2 (en) 1994-07-08 2002-04-30 株式会社東芝 Method for manufacturing semiconductor device
JPH10106994A (en) 1997-01-28 1998-04-24 Hitachi Chem Co Ltd Cerium oxide abrasive agent and polishing method of substrate
WO2002067309A1 (en) 2001-02-20 2002-08-29 Hitachi Chemical Co., Ltd. Polishing compound and method for polishing substrate
US7044836B2 (en) * 2003-04-21 2006-05-16 Cabot Microelectronics Corporation Coated metal oxide particles for CMP
JP2006249129A (en) 2005-03-08 2006-09-21 Hitachi Chem Co Ltd Method for producing polishing agent and polishing agent
US8617275B2 (en) 2008-04-23 2013-12-31 Hitachi Chemical Company, Ltd. Polishing agent and method for polishing substrate using the polishing agent
JP5441362B2 (en) * 2008-05-30 2014-03-12 富士フイルム株式会社 Polishing liquid and polishing method
US8247327B2 (en) * 2008-07-30 2012-08-21 Cabot Microelectronics Corporation Methods and compositions for polishing silicon-containing substrates
JP2010095650A (en) * 2008-10-17 2010-04-30 Hitachi Chem Co Ltd Abrasives composition and method for polishing substrates using the same
CN103342986B (en) 2008-12-11 2015-01-07 日立化成株式会社 Polishing solution for CMP and polishing method using same
KR101400585B1 (en) * 2009-02-16 2014-05-27 히타치가세이가부시끼가이샤 Polishing agent for copper polishing and polishing method using same
KR20120023043A (en) 2009-06-09 2012-03-12 히다치 가세고교 가부시끼가이샤 Abrasive slurry, abrasive set, and method for grinding substrate
KR101172647B1 (en) * 2009-10-22 2012-08-08 히다치 가세고교 가부시끼가이샤 Polishing agent, concentrated one-pack type polishing agent, two-pack type polishing agent and method for polishing substrate
US8853082B2 (en) * 2009-12-28 2014-10-07 Hitachi Chemical Company, Ltd. Polishing liquid for CMP and polishing method using the same
CN103497733B (en) 2010-11-22 2016-11-23 日立化成株式会社 The set agent of suspension, lapping liquid, lapping liquid, the Ginding process of substrate and substrate
SG190058A1 (en) 2010-11-22 2013-06-28 Hitachi Chemical Co Ltd Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate
CN103221503A (en) 2010-11-22 2013-07-24 日立化成株式会社 Method for producing abrasive grains, method for producing slurry, and method for producing polishing liquid
JP2013038211A (en) 2011-08-08 2013-02-21 Hitachi Chem Co Ltd Polishing liquid for cmp and polishing method using the same
SG10201606827RA (en) 2012-02-21 2016-10-28 Hitachi Chemical Co Ltd Polishing agent, polishing agent set, and substrate polishing method
JP2015088495A (en) * 2012-02-21 2015-05-07 日立化成株式会社 Polishing material, polishing material set, and method for polishing base material
WO2013124441A1 (en) 2012-02-23 2013-08-29 Pancosma S.A. Use of dialkyl-thiosulfinate and/or thiosulfonate to improve the resistance of an animal infected by a pathogen

Also Published As

Publication number Publication date
KR20150048790A (en) 2015-05-07
JP6107826B2 (en) 2017-04-05
CN104582899A (en) 2015-04-29
TW201410855A (en) 2014-03-16
US9163162B2 (en) 2015-10-20
WO2014034358A1 (en) 2014-03-06
JPWO2014034358A1 (en) 2016-08-08
US20150232704A1 (en) 2015-08-20
CN104582899B (en) 2018-11-09
TWI565793B (en) 2017-01-11
KR102137293B1 (en) 2020-07-23

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