SG11201501334RA - Polishing agent, polishing agent set and method for polishing base - Google Patents
Polishing agent, polishing agent set and method for polishing baseInfo
- Publication number
- SG11201501334RA SG11201501334RA SG11201501334RA SG11201501334RA SG11201501334RA SG 11201501334R A SG11201501334R A SG 11201501334RA SG 11201501334R A SG11201501334R A SG 11201501334RA SG 11201501334R A SG11201501334R A SG 11201501334RA SG 11201501334R A SG11201501334R A SG 11201501334RA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing
- polishing agent
- base
- agent
- agent set
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title 3
- 238000000034 method Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
- C01F17/224—Oxides or hydroxides of lanthanides
- C01F17/235—Cerium oxides or hydroxides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012190033 | 2012-08-30 | ||
PCT/JP2013/070619 WO2014034358A1 (en) | 2012-08-30 | 2013-07-30 | Polishing agent, polishing agent set and method for polishing base |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201501334RA true SG11201501334RA (en) | 2015-05-28 |
Family
ID=50183178
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201501334RA SG11201501334RA (en) | 2012-08-30 | 2013-07-30 | Polishing agent, polishing agent set and method for polishing base |
Country Status (7)
Country | Link |
---|---|
US (1) | US9163162B2 (en) |
JP (1) | JP6107826B2 (en) |
KR (1) | KR102137293B1 (en) |
CN (1) | CN104582899B (en) |
SG (1) | SG11201501334RA (en) |
TW (1) | TWI565793B (en) |
WO (1) | WO2014034358A1 (en) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014129408A1 (en) * | 2013-02-21 | 2014-08-28 | 株式会社フジミインコーポレーテッド | Polishing composition and method for manufacturing polished article |
WO2014199739A1 (en) * | 2013-06-12 | 2014-12-18 | 日立化成株式会社 | Polishing liquid for cmp, and polishing method |
DE102014111781B4 (en) * | 2013-08-19 | 2022-08-11 | Korea Atomic Energy Research Institute | Process for the electrochemical production of a silicon layer |
KR20160054466A (en) | 2013-09-10 | 2016-05-16 | 히타치가세이가부시끼가이샤 | Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate |
KR102138406B1 (en) * | 2013-12-26 | 2020-07-27 | 히타치가세이가부시끼가이샤 | Abrasive, abrasive set, and method for polishing substrate |
JP6569191B2 (en) * | 2014-06-10 | 2019-09-04 | 日立化成株式会社 | Abrasive, abrasive set, and substrate polishing method |
WO2016006553A1 (en) * | 2014-07-09 | 2016-01-14 | 日立化成株式会社 | Cmp polishing liquid, and polishing method |
KR102434586B1 (en) * | 2015-08-06 | 2022-08-23 | 주식회사 케이씨텍 | Multi-function polishing slurry composition |
KR102628333B1 (en) * | 2015-09-09 | 2024-01-22 | 가부시끼가이샤 레조낙 | Polishing liquid, polishing liquid set, and base polishing method |
KR102509260B1 (en) * | 2015-11-20 | 2023-03-14 | 삼성디스플레이 주식회사 | Polishing slurry for silicon, method of polishing polysilicon and method of manufacturing a thin film transistor substrate |
KR101827366B1 (en) * | 2016-05-16 | 2018-02-09 | 주식회사 케이씨텍 | Slurry composition for high step height polishing |
KR102508181B1 (en) * | 2016-12-28 | 2023-03-09 | 니타 듀퐁 가부시키가이샤 | Polishing composition and polishing method |
WO2018179061A1 (en) * | 2017-03-27 | 2018-10-04 | 日立化成株式会社 | Polishing liquid, polishing liquid set, and polishing method |
JP6708994B2 (en) * | 2017-03-27 | 2020-06-10 | 日立化成株式会社 | Slurry and polishing method |
US11655394B2 (en) * | 2017-08-09 | 2023-05-23 | Resonac Corporation | Polishing solution and polishing method |
US10711158B2 (en) * | 2017-09-28 | 2020-07-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of using them |
WO2019064524A1 (en) * | 2017-09-29 | 2019-04-04 | 日立化成株式会社 | Polishing solution, polishing solution set, and polishing method |
JP7421855B2 (en) * | 2018-03-02 | 2024-01-25 | Agc株式会社 | Abrasives, polishing methods, and additives for polishing |
US11572490B2 (en) | 2018-03-22 | 2023-02-07 | Showa Denko Materials Co., Ltd. | Polishing liquid, polishing liquid set, and polishing method |
WO2020021680A1 (en) | 2018-07-26 | 2020-01-30 | 日立化成株式会社 | Slurry and polishing method |
JP7176225B2 (en) * | 2018-04-27 | 2022-11-22 | 昭和電工マテリアルズ株式会社 | Polishing liquid, polishing liquid set and polishing method |
WO2020100985A1 (en) * | 2018-11-15 | 2020-05-22 | 花王株式会社 | Polishing liquid composition |
CN113004797B (en) * | 2019-12-19 | 2024-04-12 | 安集微电子(上海)有限公司 | Chemical mechanical polishing solution |
US20230094224A1 (en) * | 2020-01-16 | 2023-03-30 | Showa Denko Materials Co., Ltd. | Polishing agent, stock solution for polishing agent, and polishing method |
US20230203342A1 (en) * | 2021-01-06 | 2023-06-29 | Showa Denko Materials Co., Ltd. | Polishing liquid, polishing liquid set, and polishing method |
TWI771983B (en) * | 2021-04-14 | 2022-07-21 | 國立中山大學 | Defect detection method of gan high electron mobility transistor |
CN113563802A (en) * | 2021-08-12 | 2021-10-29 | 南昌大学 | Preparation method of nano cerium-based polishing slurry |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3278532B2 (en) | 1994-07-08 | 2002-04-30 | 株式会社東芝 | Method for manufacturing semiconductor device |
JPH10106994A (en) | 1997-01-28 | 1998-04-24 | Hitachi Chem Co Ltd | Cerium oxide abrasive agent and polishing method of substrate |
WO2002067309A1 (en) | 2001-02-20 | 2002-08-29 | Hitachi Chemical Co., Ltd. | Polishing compound and method for polishing substrate |
US7044836B2 (en) * | 2003-04-21 | 2006-05-16 | Cabot Microelectronics Corporation | Coated metal oxide particles for CMP |
JP2006249129A (en) | 2005-03-08 | 2006-09-21 | Hitachi Chem Co Ltd | Method for producing polishing agent and polishing agent |
US8617275B2 (en) | 2008-04-23 | 2013-12-31 | Hitachi Chemical Company, Ltd. | Polishing agent and method for polishing substrate using the polishing agent |
JP5441362B2 (en) * | 2008-05-30 | 2014-03-12 | 富士フイルム株式会社 | Polishing liquid and polishing method |
US8247327B2 (en) * | 2008-07-30 | 2012-08-21 | Cabot Microelectronics Corporation | Methods and compositions for polishing silicon-containing substrates |
JP2010095650A (en) * | 2008-10-17 | 2010-04-30 | Hitachi Chem Co Ltd | Abrasives composition and method for polishing substrates using the same |
CN103342986B (en) | 2008-12-11 | 2015-01-07 | 日立化成株式会社 | Polishing solution for CMP and polishing method using same |
KR101400585B1 (en) * | 2009-02-16 | 2014-05-27 | 히타치가세이가부시끼가이샤 | Polishing agent for copper polishing and polishing method using same |
KR20120023043A (en) | 2009-06-09 | 2012-03-12 | 히다치 가세고교 가부시끼가이샤 | Abrasive slurry, abrasive set, and method for grinding substrate |
KR101172647B1 (en) * | 2009-10-22 | 2012-08-08 | 히다치 가세고교 가부시끼가이샤 | Polishing agent, concentrated one-pack type polishing agent, two-pack type polishing agent and method for polishing substrate |
US8853082B2 (en) * | 2009-12-28 | 2014-10-07 | Hitachi Chemical Company, Ltd. | Polishing liquid for CMP and polishing method using the same |
CN103497733B (en) | 2010-11-22 | 2016-11-23 | 日立化成株式会社 | The set agent of suspension, lapping liquid, lapping liquid, the Ginding process of substrate and substrate |
SG190058A1 (en) | 2010-11-22 | 2013-06-28 | Hitachi Chemical Co Ltd | Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate |
CN103221503A (en) | 2010-11-22 | 2013-07-24 | 日立化成株式会社 | Method for producing abrasive grains, method for producing slurry, and method for producing polishing liquid |
JP2013038211A (en) | 2011-08-08 | 2013-02-21 | Hitachi Chem Co Ltd | Polishing liquid for cmp and polishing method using the same |
SG10201606827RA (en) | 2012-02-21 | 2016-10-28 | Hitachi Chemical Co Ltd | Polishing agent, polishing agent set, and substrate polishing method |
JP2015088495A (en) * | 2012-02-21 | 2015-05-07 | 日立化成株式会社 | Polishing material, polishing material set, and method for polishing base material |
WO2013124441A1 (en) | 2012-02-23 | 2013-08-29 | Pancosma S.A. | Use of dialkyl-thiosulfinate and/or thiosulfonate to improve the resistance of an animal infected by a pathogen |
-
2013
- 2013-07-30 WO PCT/JP2013/070619 patent/WO2014034358A1/en active Application Filing
- 2013-07-30 JP JP2014532891A patent/JP6107826B2/en active Active
- 2013-07-30 SG SG11201501334RA patent/SG11201501334RA/en unknown
- 2013-07-30 KR KR1020157007136A patent/KR102137293B1/en active IP Right Grant
- 2013-07-30 US US14/424,970 patent/US9163162B2/en active Active
- 2013-07-30 CN CN201380045013.4A patent/CN104582899B/en active Active
- 2013-08-07 TW TW102128194A patent/TWI565793B/en active
Also Published As
Publication number | Publication date |
---|---|
KR20150048790A (en) | 2015-05-07 |
JP6107826B2 (en) | 2017-04-05 |
CN104582899A (en) | 2015-04-29 |
TW201410855A (en) | 2014-03-16 |
US9163162B2 (en) | 2015-10-20 |
WO2014034358A1 (en) | 2014-03-06 |
JPWO2014034358A1 (en) | 2016-08-08 |
US20150232704A1 (en) | 2015-08-20 |
CN104582899B (en) | 2018-11-09 |
TWI565793B (en) | 2017-01-11 |
KR102137293B1 (en) | 2020-07-23 |
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