SG11201501334RA - Polishing agent, polishing agent set and method for polishing base - Google Patents

Polishing agent, polishing agent set and method for polishing base

Info

Publication number
SG11201501334RA
SG11201501334RA SG11201501334RA SG11201501334RA SG11201501334RA SG 11201501334R A SG11201501334R A SG 11201501334RA SG 11201501334R A SG11201501334R A SG 11201501334RA SG 11201501334R A SG11201501334R A SG 11201501334RA SG 11201501334R A SG11201501334R A SG 11201501334RA
Authority
SG
Singapore
Prior art keywords
polishing
polishing agent
base
agent
agent set
Prior art date
Application number
SG11201501334RA
Inventor
Toshiaki Akutsu
Hisataka Minami
Tomohiro Iwano
Koji Fujisaki
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of SG11201501334RA publication Critical patent/SG11201501334RA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01FCOMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00Compounds of rare earth metals
    • C01F17/20Compounds containing only rare earth metals as the metal element
    • C01F17/206Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • C01F17/224Oxides or hydroxides of lanthanides
    • C01F17/235Cerium oxides or hydroxides
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1409Abrasive particles per se
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/31051Planarisation of the insulating layers
    • H01L21/31053Planarisation of the insulating layers involving a dielectric removal step
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/80Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/84Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/64Nanometer sized, i.e. from 1-100 nanometer

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201501334RA 2012-08-30 2013-07-30 Polishing agent, polishing agent set and method for polishing base SG11201501334RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012190033 2012-08-30
PCT/JP2013/070619 WO2014034358A1 (en) 2012-08-30 2013-07-30 Polishing agent, polishing agent set and method for polishing base

Publications (1)

Publication Number Publication Date
SG11201501334RA true SG11201501334RA (en) 2015-05-28

Family

ID=50183178

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201501334RA SG11201501334RA (en) 2012-08-30 2013-07-30 Polishing agent, polishing agent set and method for polishing base

Country Status (7)

Country Link
US (1) US9163162B2 (en)
JP (1) JP6107826B2 (en)
KR (1) KR102137293B1 (en)
CN (1) CN104582899B (en)
SG (1) SG11201501334RA (en)
TW (1) TWI565793B (en)
WO (1) WO2014034358A1 (en)

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SG11201506296VA (en) * 2013-02-21 2015-09-29 Fujimi Inc Polishing composition and method for producing polished article
US10155886B2 (en) * 2013-06-12 2018-12-18 Hitachi Chemical Company, Ltd. Polishing liquid for CMP, and polishing method
US20150050816A1 (en) * 2013-08-19 2015-02-19 Korea Atomic Energy Research Institute Method of electrochemically preparing silicon film
WO2015037311A1 (en) 2013-09-10 2015-03-19 日立化成株式会社 Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate
WO2015098197A1 (en) 2013-12-26 2015-07-02 日立化成株式会社 Abrasive, abrasive set, and method for polishing substrate
JP6569191B2 (en) * 2014-06-10 2019-09-04 日立化成株式会社 Abrasive, abrasive set, and substrate polishing method
KR20170032335A (en) * 2014-07-09 2017-03-22 히타치가세이가부시끼가이샤 Cmp polishing liquid, and polishing method
KR102434586B1 (en) * 2015-08-06 2022-08-23 주식회사 케이씨텍 Multi-function polishing slurry composition
WO2017043139A1 (en) * 2015-09-09 2017-03-16 日立化成株式会社 Polishing liquid, polishing liquid set, and substrate polishing method
KR102509260B1 (en) * 2015-11-20 2023-03-14 삼성디스플레이 주식회사 Polishing slurry for silicon, method of polishing polysilicon and method of manufacturing a thin film transistor substrate
KR101827366B1 (en) * 2016-05-16 2018-02-09 주식회사 케이씨텍 Slurry composition for high step height polishing
WO2018124226A1 (en) * 2016-12-28 2018-07-05 ニッタ・ハース株式会社 Polishing composition, and polishing method
WO2018179061A1 (en) * 2017-03-27 2018-10-04 日立化成株式会社 Polishing liquid, polishing liquid set, and polishing method
SG11201908858SA (en) 2017-03-27 2019-10-30 Hitachi Chemical Co Ltd Slurry and polishing method
CN110997856B (en) * 2017-08-09 2021-10-29 昭和电工材料株式会社 Polishing liquid and polishing method
US10711158B2 (en) * 2017-09-28 2020-07-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of using them
SG11202002314WA (en) * 2017-09-29 2020-04-29 Hitachi Chemical Co Ltd Polishing solution, polishing solution set, and polishing method
JP7421855B2 (en) * 2018-03-02 2024-01-25 Agc株式会社 Abrasives, polishing methods, and additives for polishing
US11572490B2 (en) 2018-03-22 2023-02-07 Showa Denko Materials Co., Ltd. Polishing liquid, polishing liquid set, and polishing method
WO2020021680A1 (en) 2018-07-26 2020-01-30 日立化成株式会社 Slurry and polishing method
JP7176225B2 (en) * 2018-04-27 2022-11-22 昭和電工マテリアルズ株式会社 Polishing liquid, polishing liquid set and polishing method
WO2020100985A1 (en) * 2018-11-15 2020-05-22 花王株式会社 Polishing liquid composition
CN113004797B (en) * 2019-12-19 2024-04-12 安集微电子(上海)有限公司 Chemical mechanical polishing solution
CN115039203A (en) * 2021-01-06 2022-09-09 昭和电工材料株式会社 Polishing liquid, polishing liquid set and polishing method
TWI771983B (en) * 2021-04-14 2022-07-21 國立中山大學 Defect detection method of gan high electron mobility transistor
CN113563802A (en) * 2021-08-12 2021-10-29 南昌大学 Preparation method of nano cerium-based polishing slurry

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JP3278532B2 (en) 1994-07-08 2002-04-30 株式会社東芝 Method for manufacturing semiconductor device
JPH10106994A (en) 1997-01-28 1998-04-24 Hitachi Chem Co Ltd Cerium oxide abrasive agent and polishing method of substrate
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US7044836B2 (en) * 2003-04-21 2006-05-16 Cabot Microelectronics Corporation Coated metal oxide particles for CMP
JP2006249129A (en) 2005-03-08 2006-09-21 Hitachi Chem Co Ltd Method for producing polishing agent and polishing agent
CN103396765A (en) * 2008-04-23 2013-11-20 日立化成工业株式会社 Polishing agent and method for polishing substrate using polshing agent
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JP2010095650A (en) * 2008-10-17 2010-04-30 Hitachi Chem Co Ltd Abrasives composition and method for polishing substrates using the same
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KR101400585B1 (en) * 2009-02-16 2014-05-27 히타치가세이가부시끼가이샤 Polishing agent for copper polishing and polishing method using same
KR20120023043A (en) * 2009-06-09 2012-03-12 히다치 가세고교 가부시끼가이샤 Abrasive slurry, abrasive set, and method for grinding substrate
US8728341B2 (en) * 2009-10-22 2014-05-20 Hitachi Chemical Company, Ltd. Polishing agent, concentrated one-pack type polishing agent, two-pack type polishing agent and method for polishing substrate
WO2011081109A1 (en) 2009-12-28 2011-07-07 日立化成工業株式会社 Polishing liquid for cmp and polishing method using the same
CN103374330B (en) 2010-11-22 2015-10-14 日立化成株式会社 The manufacture method of the manufacture method of abrasive particle, the manufacture method of suspension and lapping liquid
CN103409108B (en) 2010-11-22 2015-04-22 日立化成株式会社 Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate
CN103500706A (en) 2010-11-22 2014-01-08 日立化成株式会社 Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate
JP2013038211A (en) 2011-08-08 2013-02-21 Hitachi Chem Co Ltd Polishing liquid for cmp and polishing method using the same
SG10201606827RA (en) 2012-02-21 2016-10-28 Hitachi Chemical Co Ltd Polishing agent, polishing agent set, and substrate polishing method
JP2015088495A (en) * 2012-02-21 2015-05-07 日立化成株式会社 Polishing material, polishing material set, and method for polishing base material
WO2013124441A1 (en) 2012-02-23 2013-08-29 Pancosma S.A. Use of dialkyl-thiosulfinate and/or thiosulfonate to improve the resistance of an animal infected by a pathogen

Also Published As

Publication number Publication date
TWI565793B (en) 2017-01-11
CN104582899B (en) 2018-11-09
KR20150048790A (en) 2015-05-07
US9163162B2 (en) 2015-10-20
US20150232704A1 (en) 2015-08-20
JP6107826B2 (en) 2017-04-05
TW201410855A (en) 2014-03-16
WO2014034358A1 (en) 2014-03-06
CN104582899A (en) 2015-04-29
KR102137293B1 (en) 2020-07-23
JPWO2014034358A1 (en) 2016-08-08

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