KR101346492B1 - 패턴 검사장치 및 패턴 검사방법 - Google Patents

패턴 검사장치 및 패턴 검사방법 Download PDF

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Publication number
KR101346492B1
KR101346492B1 KR1020127003718A KR20127003718A KR101346492B1 KR 101346492 B1 KR101346492 B1 KR 101346492B1 KR 1020127003718 A KR1020127003718 A KR 1020127003718A KR 20127003718 A KR20127003718 A KR 20127003718A KR 101346492 B1 KR101346492 B1 KR 101346492B1
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South Korea
Prior art keywords
repeating pattern
light
pattern
linearly polarized
polarized light
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Expired - Lifetime
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KR1020127003718A
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English (en)
Korean (ko)
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KR20120031239A (ko
Inventor
가즈히코 후카자와
고이치로 고마쓰
다케오 오오모리
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가부시키가이샤 니콘
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
KR1020127003718A 2003-10-27 2004-10-27 패턴 검사장치 및 패턴 검사방법 Expired - Lifetime KR101346492B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003366255 2003-10-27
JPJP-P-2003-366255 2003-10-27
PCT/JP2004/015925 WO2005040776A1 (ja) 2003-10-27 2004-10-27 表面検査装置および表面検査方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020067010222A Division KR101151077B1 (ko) 2003-10-27 2006-05-25 표면검사장치

Publications (2)

Publication Number Publication Date
KR20120031239A KR20120031239A (ko) 2012-03-30
KR101346492B1 true KR101346492B1 (ko) 2013-12-31

Family

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Family Applications (2)

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KR1020127003718A Expired - Lifetime KR101346492B1 (ko) 2003-10-27 2004-10-27 패턴 검사장치 및 패턴 검사방법
KR1020067010222A Expired - Lifetime KR101151077B1 (ko) 2003-10-27 2006-05-25 표면검사장치

Family Applications After (1)

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KR1020067010222A Expired - Lifetime KR101151077B1 (ko) 2003-10-27 2006-05-25 표면검사장치

Country Status (5)

Country Link
US (4) US7298471B2 (enExample)
JP (2) JP4552859B2 (enExample)
KR (2) KR101346492B1 (enExample)
TW (1) TW200519373A (enExample)
WO (1) WO2005040776A1 (enExample)

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KR101239546B1 (ko) * 2003-12-26 2013-03-06 가부시키가이샤 니콘 결함 검사 장치 및 결함 검사 방법
US20060099344A1 (en) 2004-11-09 2006-05-11 Eastman Kodak Company Controlling the vaporization of organic material
JP4802481B2 (ja) * 2004-11-09 2011-10-26 株式会社ニコン 表面検査装置および表面検査方法および露光システム
JPWO2007069457A1 (ja) * 2005-12-14 2009-05-21 株式会社ニコン 表面検査装置および表面検査方法
JP2007192780A (ja) * 2006-01-23 2007-08-02 Ono Sokki Co Ltd 空間フィルタ方式の速度検出装置及び空間フィルタ方式の速度検出装置の速度検出方法
JP4635939B2 (ja) * 2006-03-30 2011-02-23 株式会社ニコン 表面検査装置
JP4548385B2 (ja) 2006-05-10 2010-09-22 株式会社ニコン 表面検査装置
JP4605089B2 (ja) * 2006-05-10 2011-01-05 株式会社ニコン 表面検査装置
JP4595881B2 (ja) * 2006-05-15 2010-12-08 株式会社ニコン 表面検査装置
JP4622933B2 (ja) * 2006-05-15 2011-02-02 株式会社ニコン 表面検査方法及び表面検査装置
JP4506723B2 (ja) * 2006-05-22 2010-07-21 株式会社ニコン 表面検査装置
JP4692892B2 (ja) * 2006-06-01 2011-06-01 株式会社ニコン 表面検査装置
JP4552202B2 (ja) * 2006-06-06 2010-09-29 株式会社ニコン 表面検査装置
KR101382020B1 (ko) * 2006-07-14 2014-04-04 가부시키가이샤 니콘 표면 검사 장치
JP5022648B2 (ja) * 2006-08-11 2012-09-12 東京エレクトロン株式会社 欠陥検査方法および欠陥検査装置
JP4910637B2 (ja) * 2006-10-31 2012-04-04 凸版印刷株式会社 基板検査装置及び基板検査方法
JP5024935B2 (ja) * 2007-01-16 2012-09-12 富士フイルム株式会社 光透過性部材の欠陥検出装置及び方法
TWI449898B (zh) * 2007-02-28 2014-08-21 尼康股份有限公司 Observation device, inspection device and inspection method
JP2008249386A (ja) * 2007-03-29 2008-10-16 Dainippon Screen Mfg Co Ltd 欠陥検査装置および欠陥検査方法
US7990546B2 (en) * 2007-07-16 2011-08-02 Applied Materials Israel, Ltd. High throughput across-wafer-variation mapping
WO2009048003A1 (ja) * 2007-10-12 2009-04-16 Nikon Corporation 表面検査装置
WO2010013232A1 (en) * 2008-07-29 2010-02-04 Applied Materials Israel Ltd. Mapping variations of a surface
US8040510B2 (en) * 2008-08-22 2011-10-18 Novasolar Holdings Limited Spatially precise optical treatment or measurement of targets through intervening birefringent layers
WO2010138764A2 (en) * 2009-05-29 2010-12-02 Applied Materials, Inc. Substrate side marking and identification
EP2450944A4 (en) * 2009-07-01 2017-12-27 Nikon Corporation Exposure condition setting method and surface inspection apparatus
KR20120045774A (ko) * 2010-11-01 2012-05-09 삼성전자주식회사 웨이퍼 검사 방법
US10460998B2 (en) 2010-11-09 2019-10-29 Nikon Corporation Method for inspecting substrate, substrate inspection apparatus, exposure system, and method for producing semiconductor device
FR2994734B1 (fr) * 2012-08-21 2017-08-25 Fogale Nanotech Dispositif et procede pour faire des mesures dimensionnelles sur des objets multi-couches tels que des wafers.
US9485491B2 (en) * 2014-12-15 2016-11-01 Test Research, Inc. Optical system
US10491708B2 (en) 2015-06-05 2019-11-26 Apple Inc. Context notifications

Citations (2)

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JPS53106082A (en) * 1977-02-28 1978-09-14 Nippon Bunko Kogyo Kk Fluorescent polarization measuring device
JP2002116011A (ja) * 2000-10-05 2002-04-19 Toshiba Corp パターン評価装置及びパターン評価方法

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JPS6270738A (ja) * 1985-09-25 1987-04-01 Hitachi Electronics Eng Co Ltd 異物検出方法
JPH01107139A (ja) * 1987-10-20 1989-04-25 Fujitsu Ltd パターン検知装置
JPH0786465B2 (ja) * 1987-10-30 1995-09-20 株式会社日立製作所 異物検出方法及び装置
US5046847A (en) 1987-10-30 1991-09-10 Hitachi Ltd. Method for detecting foreign matter and device for realizing same
JPH0212002A (ja) * 1988-06-30 1990-01-17 Fujitsu Ltd パターン検査方法およびパターン検査装置
JP3255709B2 (ja) * 1992-06-17 2002-02-12 オリンパス光学工業株式会社 基板外観検査装置
JP3150203B2 (ja) * 1992-07-13 2001-03-26 株式会社日立製作所 パターン検出方法とその装置
US5432607A (en) 1993-02-22 1995-07-11 International Business Machines Corporation Method and apparatus for inspecting patterned thin films using diffracted beam ellipsometry
JPH07120234A (ja) 1993-10-27 1995-05-12 Fujitsu Ltd 外観検査方法及び装置
JP3613402B2 (ja) * 1993-10-28 2005-01-26 テンカー・インストルメンツ 光学顕微鏡を用いて緻密なライン幅構造を映像化する方法及び装置
JP3388285B2 (ja) * 1993-12-27 2003-03-17 株式会社ニュークリエイション 検査装置
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JP4662194B2 (ja) * 2001-06-22 2011-03-30 株式会社ニコン 検査装置
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JPS53106082A (en) * 1977-02-28 1978-09-14 Nippon Bunko Kogyo Kk Fluorescent polarization measuring device
JP2002116011A (ja) * 2000-10-05 2002-04-19 Toshiba Corp パターン評価装置及びパターン評価方法

Also Published As

Publication number Publication date
US7834993B2 (en) 2010-11-16
US20130100448A1 (en) 2013-04-25
US7298471B2 (en) 2007-11-20
JP4552859B2 (ja) 2010-09-29
JPWO2005040776A1 (ja) 2007-11-22
JP2010256359A (ja) 2010-11-11
TW200519373A (en) 2005-06-16
US20100225906A1 (en) 2010-09-09
US8687182B2 (en) 2014-04-01
KR101151077B1 (ko) 2012-06-01
TWI355488B (enExample) 2012-01-01
KR20060120145A (ko) 2006-11-24
US20060192953A1 (en) 2006-08-31
WO2005040776A1 (ja) 2005-05-06
US8441627B2 (en) 2013-05-14
KR20120031239A (ko) 2012-03-30
US20080094628A1 (en) 2008-04-24

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