KR101329435B1 - 지지 기판을 포함하는 복사-방출 반도체 몸체 및 이의 제조방법 - Google Patents

지지 기판을 포함하는 복사-방출 반도체 몸체 및 이의 제조방법 Download PDF

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KR101329435B1
KR101329435B1 KR1020087029410A KR20087029410A KR101329435B1 KR 101329435 B1 KR101329435 B1 KR 101329435B1 KR 1020087029410 A KR1020087029410 A KR 1020087029410A KR 20087029410 A KR20087029410 A KR 20087029410A KR 101329435 B1 KR101329435 B1 KR 101329435B1
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semiconductor layer
support substrate
semiconductor
layer stack
radiation
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Korean (ko)
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KR20090013218A (ko
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보커 할레
젤코 스피카
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오스람 옵토 세미컨덕터스 게엠베하
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

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  • Led Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020087029410A 2006-05-03 2007-05-03 지지 기판을 포함하는 복사-방출 반도체 몸체 및 이의 제조방법 Expired - Fee Related KR101329435B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102006020537 2006-05-03
DE102006020537.5 2006-05-03
DE102006033502.3 2006-07-19
DE102006033502A DE102006033502A1 (de) 2006-05-03 2006-07-19 Strahlungsemittierender Halbleiterkörper mit Trägersubstrat und Verfahren zur Herstellung eines solchen
PCT/DE2007/000793 WO2007124737A1 (de) 2006-05-03 2007-05-03 Strahlungsemittierender halbleiterkörper mit trägersubstrat und verfahren zur herstellung eines solchen

Publications (2)

Publication Number Publication Date
KR20090013218A KR20090013218A (ko) 2009-02-04
KR101329435B1 true KR101329435B1 (ko) 2013-11-14

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KR1020087029410A Expired - Fee Related KR101329435B1 (ko) 2006-05-03 2007-05-03 지지 기판을 포함하는 복사-방출 반도체 몸체 및 이의 제조방법

Country Status (8)

Country Link
US (2) US8088649B2 (enExample)
EP (1) EP2013917A1 (enExample)
JP (1) JP5138675B2 (enExample)
KR (1) KR101329435B1 (enExample)
CN (1) CN101432900B (enExample)
DE (1) DE102006033502A1 (enExample)
TW (1) TWI343662B (enExample)
WO (1) WO2007124737A1 (enExample)

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DE102008009108A1 (de) 2008-02-14 2009-08-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterlasers sowie Halbleiterlaser
JP2009212179A (ja) * 2008-03-03 2009-09-17 Sanyo Electric Co Ltd 半導体レーザ素子および半導体レーザ素子の製造方法
KR100999779B1 (ko) * 2010-02-01 2010-12-08 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
WO2011111937A2 (ko) * 2010-03-09 2011-09-15 신왕균 투명 엘이디 웨이퍼 모듈 및 그 제조방법
KR101159782B1 (ko) 2010-02-05 2012-06-26 신왕균 투명 엘이디 웨이퍼 모듈 및 그 제조방법
GB2480873B (en) * 2010-06-04 2014-06-11 Plastic Logic Ltd Reducing defects in electronic apparatus
DE102010032813A1 (de) * 2010-07-30 2012-02-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
TWI463620B (zh) * 2012-08-22 2014-12-01 矽品精密工業股份有限公司 封裝基板之製法
DE102013111120A1 (de) * 2013-10-08 2015-04-09 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zum Vereinzeln eines Verbundes in Halbleiterchips
WO2017004497A1 (en) * 2015-07-01 2017-01-05 Sensor Electronic Technology, Inc. Substrate structure removal
US10950747B2 (en) * 2015-07-01 2021-03-16 Sensor Electronic Technology, Inc. Heterostructure for an optoelectronic device
US10363629B2 (en) * 2017-06-01 2019-07-30 Applied Materials, Inc. Mitigation of particle contamination for wafer dicing processes
DE102017130131B4 (de) * 2017-12-15 2021-08-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen und optoelektronisches Halbleiterbauteil
FR3080487B1 (fr) * 2018-04-20 2020-06-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d’un dispositif optoelectronique a matrice de diodes
DE102019108701A1 (de) * 2019-04-03 2020-10-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Mehrzahl von Bauteilen, Bauteil und Bauteilverbund aus Bauteilen
CN112993755B (zh) * 2019-11-29 2022-02-18 山东华光光电子股份有限公司 一种半导体激光器芯片及其应用方法

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KR900009289A (ko) * 1988-12-17 1990-07-04 안시환 발광장치
JPH09277595A (ja) * 1996-02-13 1997-10-28 Oki Data:Kk 光プリントヘッド
JP2005522873A (ja) 2002-04-09 2005-07-28 オリオール， インク． 縦方向構造を有するｌｅｄの製作方法
KR20060024763A (ko) * 2003-01-31 2006-03-17 오스람 옵토 세미컨덕터스 게엠베하 반도체 소자 제조 방법

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US5329529A (en) 1993-04-02 1994-07-12 Thomson Consumer Electronics, Inc. Digital data arbitration apparatus
US5486826A (en) 1994-05-19 1996-01-23 Ps Venture 1 Llc Method and apparatus for iterative compression of digital data
US5684309A (en) 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
DE19640594B4 (de) 1996-10-01 2016-08-04 Osram Gmbh Bauelement
WO1998031055A1 (en) 1997-01-09 1998-07-16 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US5831277A (en) 1997-03-19 1998-11-03 Northwestern University III-nitride superlattice structures
JP3395620B2 (ja) * 1997-12-16 2003-04-14 日亜化学工業株式会社 半導体発光素子及びその製造方法
JP2000012959A (ja) * 1998-06-22 2000-01-14 Mitsubishi Electric Corp 半導体発光装置
DE19955747A1 (de) 1999-11-19 2001-05-23 Osram Opto Semiconductors Gmbh Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur
DE10017337C2 (de) * 2000-04-07 2002-04-04 Vishay Semiconductor Gmbh Verfahren zum Herstellen lichtaussendender Halbleiterbauelemente
JP2003092450A (ja) * 2001-09-19 2003-03-28 Sharp Corp 半導体発光装置
JP2003124151A (ja) * 2001-10-17 2003-04-25 Disco Abrasive Syst Ltd サファイア基板のダイシング方法
US6955976B2 (en) * 2002-02-01 2005-10-18 Hewlett-Packard Development Company, L.P. Method for dicing wafer stacks to provide access to interior structures
JP2004037485A (ja) * 2002-06-28 2004-02-05 Mitsubishi Electric Corp 半導体光変調器と半導体光装置
DE10339985B4 (de) 2003-08-29 2008-12-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer transparenten Kontaktschicht und Verfahren zu dessen Herstellung
JP4195352B2 (ja) * 2003-09-10 2008-12-10 三星エスディアイ株式会社 発光素子基板およびそれを用いた発光素子
JP3801160B2 (ja) * 2003-09-11 2006-07-26 セイコーエプソン株式会社 半導体素子、半導体装置、半導体素子の製造方法、半導体装置の製造方法及び電子機器
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TWI232604B (en) 2004-07-23 2005-05-11 Supernova Optoelectronics Corp Manufacturing method of metal reflection layer for gallium nitride based light-emitting diode
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TWI235511B (en) 2004-11-03 2005-07-01 Chipmos Technologies Inc Method of manufacturing light emitting diode package and structure of the same
TWI251355B (en) 2004-12-22 2006-03-11 Opto Tech Corp A LED array package structure and method thereof
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Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
KR900009289A (ko) * 1988-12-17 1990-07-04 안시환 발광장치
JPH09277595A (ja) * 1996-02-13 1997-10-28 Oki Data:Kk 光プリントヘッド
JP2005522873A (ja) 2002-04-09 2005-07-28 オリオール， インク． 縦方向構造を有するｌｅｄの製作方法
KR20060024763A (ko) * 2003-01-31 2006-03-17 오스람 옵토 세미컨덕터스 게엠베하 반도체 소자 제조 방법

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Publication number Publication date
US20110186904A1 (en) 2011-08-04
JP2009535826A (ja) 2009-10-01
DE102006033502A1 (de) 2007-11-15
CN101432900B (zh) 2012-05-02
WO2007124737A1 (de) 2007-11-08
KR20090013218A (ko) 2009-02-04
TW200802985A (en) 2008-01-01
US20090218587A1 (en) 2009-09-03
CN101432900A (zh) 2009-05-13
EP2013917A1 (de) 2009-01-14
TWI343662B (en) 2011-06-11
JP5138675B2 (ja) 2013-02-06
US8258521B2 (en) 2012-09-04
US8088649B2 (en) 2012-01-03

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