JP5138675B2 - キャリア基板を有する放射線放射半導体ボディおよびその形成方法 - Google Patents

キャリア基板を有する放射線放射半導体ボディおよびその形成方法 Download PDF

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Publication number
JP5138675B2
JP5138675B2 JP2009508116A JP2009508116A JP5138675B2 JP 5138675 B2 JP5138675 B2 JP 5138675B2 JP 2009508116 A JP2009508116 A JP 2009508116A JP 2009508116 A JP2009508116 A JP 2009508116A JP 5138675 B2 JP5138675 B2 JP 5138675B2
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carrier substrate
semiconductor layer
semiconductor
layer stack
forming
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JP2009508116A
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Japanese (ja)
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JP2009535826A (ja
JP2009535826A5 (enExample
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フォルカー ヘルレ
ジェリコ スピカ
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
JP2009508116A 2006-05-03 2007-05-03 キャリア基板を有する放射線放射半導体ボディおよびその形成方法 Expired - Fee Related JP5138675B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102006020537 2006-05-03
DE102006020537.5 2006-05-03
DE102006033502.3 2006-07-19
DE102006033502A DE102006033502A1 (de) 2006-05-03 2006-07-19 Strahlungsemittierender Halbleiterkörper mit Trägersubstrat und Verfahren zur Herstellung eines solchen
PCT/DE2007/000793 WO2007124737A1 (de) 2006-05-03 2007-05-03 Strahlungsemittierender halbleiterkörper mit trägersubstrat und verfahren zur herstellung eines solchen

Publications (3)

Publication Number Publication Date
JP2009535826A JP2009535826A (ja) 2009-10-01
JP2009535826A5 JP2009535826A5 (enExample) 2011-06-16
JP5138675B2 true JP5138675B2 (ja) 2013-02-06

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JP2009508116A Expired - Fee Related JP5138675B2 (ja) 2006-05-03 2007-05-03 キャリア基板を有する放射線放射半導体ボディおよびその形成方法

Country Status (8)

Country Link
US (2) US8088649B2 (enExample)
EP (1) EP2013917A1 (enExample)
JP (1) JP5138675B2 (enExample)
KR (1) KR101329435B1 (enExample)
CN (1) CN101432900B (enExample)
DE (1) DE102006033502A1 (enExample)
TW (1) TWI343662B (enExample)
WO (1) WO2007124737A1 (enExample)

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JP2009212179A (ja) * 2008-03-03 2009-09-17 Sanyo Electric Co Ltd 半導体レーザ素子および半導体レーザ素子の製造方法
KR100999779B1 (ko) * 2010-02-01 2010-12-08 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
WO2011111937A2 (ko) * 2010-03-09 2011-09-15 신왕균 투명 엘이디 웨이퍼 모듈 및 그 제조방법
KR101159782B1 (ko) 2010-02-05 2012-06-26 신왕균 투명 엘이디 웨이퍼 모듈 및 그 제조방법
GB2480873B (en) * 2010-06-04 2014-06-11 Plastic Logic Ltd Reducing defects in electronic apparatus
DE102010032813A1 (de) * 2010-07-30 2012-02-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
TWI463620B (zh) * 2012-08-22 2014-12-01 矽品精密工業股份有限公司 封裝基板之製法
DE102013111120A1 (de) * 2013-10-08 2015-04-09 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zum Vereinzeln eines Verbundes in Halbleiterchips
WO2017004497A1 (en) * 2015-07-01 2017-01-05 Sensor Electronic Technology, Inc. Substrate structure removal
US10950747B2 (en) * 2015-07-01 2021-03-16 Sensor Electronic Technology, Inc. Heterostructure for an optoelectronic device
US10363629B2 (en) * 2017-06-01 2019-07-30 Applied Materials, Inc. Mitigation of particle contamination for wafer dicing processes
DE102017130131B4 (de) * 2017-12-15 2021-08-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen und optoelektronisches Halbleiterbauteil
FR3080487B1 (fr) * 2018-04-20 2020-06-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d’un dispositif optoelectronique a matrice de diodes
DE102019108701A1 (de) * 2019-04-03 2020-10-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Mehrzahl von Bauteilen, Bauteil und Bauteilverbund aus Bauteilen
CN112993755B (zh) * 2019-11-29 2022-02-18 山东华光光电子股份有限公司 一种半导体激光器芯片及其应用方法

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Also Published As

Publication number Publication date
US20110186904A1 (en) 2011-08-04
JP2009535826A (ja) 2009-10-01
DE102006033502A1 (de) 2007-11-15
CN101432900B (zh) 2012-05-02
WO2007124737A1 (de) 2007-11-08
KR20090013218A (ko) 2009-02-04
TW200802985A (en) 2008-01-01
US20090218587A1 (en) 2009-09-03
KR101329435B1 (ko) 2013-11-14
CN101432900A (zh) 2009-05-13
EP2013917A1 (de) 2009-01-14
TWI343662B (en) 2011-06-11
US8258521B2 (en) 2012-09-04
US8088649B2 (en) 2012-01-03

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