JP2009535826A5 - - Google Patents

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Publication number
JP2009535826A5
JP2009535826A5 JP2009508116A JP2009508116A JP2009535826A5 JP 2009535826 A5 JP2009535826 A5 JP 2009535826A5 JP 2009508116 A JP2009508116 A JP 2009508116A JP 2009508116 A JP2009508116 A JP 2009508116A JP 2009535826 A5 JP2009535826 A5 JP 2009535826A5
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JP
Japan
Prior art keywords
carrier substrate
radiation emitting
semiconductor
semiconductor layer
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009508116A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009535826A (ja
JP5138675B2 (ja
Filing date
Publication date
Priority claimed from DE102006033502A external-priority patent/DE102006033502A1/de
Application filed filed Critical
Publication of JP2009535826A publication Critical patent/JP2009535826A/ja
Publication of JP2009535826A5 publication Critical patent/JP2009535826A5/ja
Application granted granted Critical
Publication of JP5138675B2 publication Critical patent/JP5138675B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009508116A 2006-05-03 2007-05-03 キャリア基板を有する放射線放射半導体ボディおよびその形成方法 Expired - Fee Related JP5138675B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102006020537 2006-05-03
DE102006020537.5 2006-05-03
DE102006033502.3 2006-07-19
DE102006033502A DE102006033502A1 (de) 2006-05-03 2006-07-19 Strahlungsemittierender Halbleiterkörper mit Trägersubstrat und Verfahren zur Herstellung eines solchen
PCT/DE2007/000793 WO2007124737A1 (de) 2006-05-03 2007-05-03 Strahlungsemittierender halbleiterkörper mit trägersubstrat und verfahren zur herstellung eines solchen

Publications (3)

Publication Number Publication Date
JP2009535826A JP2009535826A (ja) 2009-10-01
JP2009535826A5 true JP2009535826A5 (enExample) 2011-06-16
JP5138675B2 JP5138675B2 (ja) 2013-02-06

Family

ID=38332444

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009508116A Expired - Fee Related JP5138675B2 (ja) 2006-05-03 2007-05-03 キャリア基板を有する放射線放射半導体ボディおよびその形成方法

Country Status (8)

Country Link
US (2) US8088649B2 (enExample)
EP (1) EP2013917A1 (enExample)
JP (1) JP5138675B2 (enExample)
KR (1) KR101329435B1 (enExample)
CN (1) CN101432900B (enExample)
DE (1) DE102006033502A1 (enExample)
TW (1) TWI343662B (enExample)
WO (1) WO2007124737A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008009108A1 (de) 2008-02-14 2009-08-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterlasers sowie Halbleiterlaser
JP2009212179A (ja) * 2008-03-03 2009-09-17 Sanyo Electric Co Ltd 半導体レーザ素子および半導体レーザ素子の製造方法
KR100999779B1 (ko) * 2010-02-01 2010-12-08 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
WO2011111937A2 (ko) * 2010-03-09 2011-09-15 신왕균 투명 엘이디 웨이퍼 모듈 및 그 제조방법
KR101159782B1 (ko) 2010-02-05 2012-06-26 신왕균 투명 엘이디 웨이퍼 모듈 및 그 제조방법
GB2480873B (en) * 2010-06-04 2014-06-11 Plastic Logic Ltd Reducing defects in electronic apparatus
DE102010032813A1 (de) * 2010-07-30 2012-02-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
TWI463620B (zh) * 2012-08-22 2014-12-01 矽品精密工業股份有限公司 封裝基板之製法
DE102013111120A1 (de) * 2013-10-08 2015-04-09 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zum Vereinzeln eines Verbundes in Halbleiterchips
WO2017004497A1 (en) * 2015-07-01 2017-01-05 Sensor Electronic Technology, Inc. Substrate structure removal
US10950747B2 (en) * 2015-07-01 2021-03-16 Sensor Electronic Technology, Inc. Heterostructure for an optoelectronic device
US10363629B2 (en) * 2017-06-01 2019-07-30 Applied Materials, Inc. Mitigation of particle contamination for wafer dicing processes
DE102017130131B4 (de) * 2017-12-15 2021-08-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen und optoelektronisches Halbleiterbauteil
FR3080487B1 (fr) * 2018-04-20 2020-06-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d’un dispositif optoelectronique a matrice de diodes
DE102019108701A1 (de) * 2019-04-03 2020-10-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Mehrzahl von Bauteilen, Bauteil und Bauteilverbund aus Bauteilen
CN112993755B (zh) * 2019-11-29 2022-02-18 山东华光光电子股份有限公司 一种半导体激光器芯片及其应用方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910003735B1 (ko) * 1988-12-17 1991-06-10 삼성전자 주식회사 발광장치
US5329529A (en) 1993-04-02 1994-07-12 Thomson Consumer Electronics, Inc. Digital data arbitration apparatus
US5486826A (en) 1994-05-19 1996-01-23 Ps Venture 1 Llc Method and apparatus for iterative compression of digital data
JPH09277595A (ja) * 1996-02-13 1997-10-28 Oki Data:Kk 光プリントヘッド
US5684309A (en) 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
DE19640594B4 (de) 1996-10-01 2016-08-04 Osram Gmbh Bauelement
WO1998031055A1 (en) 1997-01-09 1998-07-16 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US5831277A (en) 1997-03-19 1998-11-03 Northwestern University III-nitride superlattice structures
JP3395620B2 (ja) * 1997-12-16 2003-04-14 日亜化学工業株式会社 半導体発光素子及びその製造方法
JP2000012959A (ja) * 1998-06-22 2000-01-14 Mitsubishi Electric Corp 半導体発光装置
DE19955747A1 (de) 1999-11-19 2001-05-23 Osram Opto Semiconductors Gmbh Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur
DE10017337C2 (de) * 2000-04-07 2002-04-04 Vishay Semiconductor Gmbh Verfahren zum Herstellen lichtaussendender Halbleiterbauelemente
JP2003092450A (ja) * 2001-09-19 2003-03-28 Sharp Corp 半導体発光装置
JP2003124151A (ja) * 2001-10-17 2003-04-25 Disco Abrasive Syst Ltd サファイア基板のダイシング方法
US6955976B2 (en) * 2002-02-01 2005-10-18 Hewlett-Packard Development Company, L.P. Method for dicing wafer stacks to provide access to interior structures
US20030189215A1 (en) 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
JP2004037485A (ja) * 2002-06-28 2004-02-05 Mitsubishi Electric Corp 半導体光変調器と半導体光装置
CN100530705C (zh) * 2003-01-31 2009-08-19 奥斯兰姆奥普托半导体有限责任公司 用于制造一个半导体元器件的方法
DE10339985B4 (de) 2003-08-29 2008-12-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer transparenten Kontaktschicht und Verfahren zu dessen Herstellung
JP4195352B2 (ja) * 2003-09-10 2008-12-10 三星エスディアイ株式会社 発光素子基板およびそれを用いた発光素子
JP3801160B2 (ja) * 2003-09-11 2006-07-26 セイコーエプソン株式会社 半導体素子、半導体装置、半導体素子の製造方法、半導体装置の製造方法及び電子機器
US20050205883A1 (en) * 2004-03-19 2005-09-22 Wierer Jonathan J Jr Photonic crystal light emitting device
TWI232604B (en) 2004-07-23 2005-05-11 Supernova Optoelectronics Corp Manufacturing method of metal reflection layer for gallium nitride based light-emitting diode
JP2006054246A (ja) 2004-08-10 2006-02-23 Disco Abrasive Syst Ltd ウエーハの分離方法
TWI235511B (en) 2004-11-03 2005-07-01 Chipmos Technologies Inc Method of manufacturing light emitting diode package and structure of the same
TWI251355B (en) 2004-12-22 2006-03-11 Opto Tech Corp A LED array package structure and method thereof
TWI251357B (en) 2005-06-21 2006-03-11 Epitech Technology Corp Light-emitting diode and method for manufacturing the same

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