TWI343662B - Radiation-emitting semiconductor body with carrier substrate and the method for fabricating the same - Google Patents

Radiation-emitting semiconductor body with carrier substrate and the method for fabricating the same Download PDF

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Publication number
TWI343662B
TWI343662B TW096114899A TW96114899A TWI343662B TW I343662 B TWI343662 B TW I343662B TW 096114899 A TW096114899 A TW 096114899A TW 96114899 A TW96114899 A TW 96114899A TW I343662 B TWI343662 B TW I343662B
Authority
TW
Taiwan
Prior art keywords
carrier substrate
semiconductor layer
semiconductor
radiation
stack
Prior art date
Application number
TW096114899A
Other languages
English (en)
Chinese (zh)
Other versions
TW200802985A (en
Inventor
Volker Haerle
Zeljko Spika
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200802985A publication Critical patent/TW200802985A/zh
Application granted granted Critical
Publication of TWI343662B publication Critical patent/TWI343662B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Led Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW096114899A 2006-05-03 2007-04-27 Radiation-emitting semiconductor body with carrier substrate and the method for fabricating the same TWI343662B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006020537 2006-05-03
DE102006033502A DE102006033502A1 (de) 2006-05-03 2006-07-19 Strahlungsemittierender Halbleiterkörper mit Trägersubstrat und Verfahren zur Herstellung eines solchen

Publications (2)

Publication Number Publication Date
TW200802985A TW200802985A (en) 2008-01-01
TWI343662B true TWI343662B (en) 2011-06-11

Family

ID=38332444

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096114899A TWI343662B (en) 2006-05-03 2007-04-27 Radiation-emitting semiconductor body with carrier substrate and the method for fabricating the same

Country Status (8)

Country Link
US (2) US8088649B2 (enExample)
EP (1) EP2013917A1 (enExample)
JP (1) JP5138675B2 (enExample)
KR (1) KR101329435B1 (enExample)
CN (1) CN101432900B (enExample)
DE (1) DE102006033502A1 (enExample)
TW (1) TWI343662B (enExample)
WO (1) WO2007124737A1 (enExample)

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* Cited by examiner, † Cited by third party
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DE102008009108A1 (de) 2008-02-14 2009-08-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterlasers sowie Halbleiterlaser
JP2009212179A (ja) * 2008-03-03 2009-09-17 Sanyo Electric Co Ltd 半導体レーザ素子および半導体レーザ素子の製造方法
KR100999779B1 (ko) * 2010-02-01 2010-12-08 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
WO2011111937A2 (ko) * 2010-03-09 2011-09-15 신왕균 투명 엘이디 웨이퍼 모듈 및 그 제조방법
KR101159782B1 (ko) 2010-02-05 2012-06-26 신왕균 투명 엘이디 웨이퍼 모듈 및 그 제조방법
GB2480873B (en) * 2010-06-04 2014-06-11 Plastic Logic Ltd Reducing defects in electronic apparatus
DE102010032813A1 (de) * 2010-07-30 2012-02-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
TWI463620B (zh) * 2012-08-22 2014-12-01 矽品精密工業股份有限公司 封裝基板之製法
DE102013111120A1 (de) * 2013-10-08 2015-04-09 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zum Vereinzeln eines Verbundes in Halbleiterchips
WO2017004497A1 (en) * 2015-07-01 2017-01-05 Sensor Electronic Technology, Inc. Substrate structure removal
US10950747B2 (en) * 2015-07-01 2021-03-16 Sensor Electronic Technology, Inc. Heterostructure for an optoelectronic device
US10363629B2 (en) * 2017-06-01 2019-07-30 Applied Materials, Inc. Mitigation of particle contamination for wafer dicing processes
DE102017130131B4 (de) * 2017-12-15 2021-08-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen und optoelektronisches Halbleiterbauteil
FR3080487B1 (fr) * 2018-04-20 2020-06-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d’un dispositif optoelectronique a matrice de diodes
DE102019108701A1 (de) * 2019-04-03 2020-10-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Mehrzahl von Bauteilen, Bauteil und Bauteilverbund aus Bauteilen
CN112993755B (zh) * 2019-11-29 2022-02-18 山东华光光电子股份有限公司 一种半导体激光器芯片及其应用方法

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KR910003735B1 (ko) * 1988-12-17 1991-06-10 삼성전자 주식회사 발광장치
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JPH09277595A (ja) * 1996-02-13 1997-10-28 Oki Data:Kk 光プリントヘッド
US5684309A (en) 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
DE19640594B4 (de) 1996-10-01 2016-08-04 Osram Gmbh Bauelement
WO1998031055A1 (en) 1997-01-09 1998-07-16 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US5831277A (en) 1997-03-19 1998-11-03 Northwestern University III-nitride superlattice structures
JP3395620B2 (ja) * 1997-12-16 2003-04-14 日亜化学工業株式会社 半導体発光素子及びその製造方法
JP2000012959A (ja) * 1998-06-22 2000-01-14 Mitsubishi Electric Corp 半導体発光装置
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CN100530705C (zh) * 2003-01-31 2009-08-19 奥斯兰姆奥普托半导体有限责任公司 用于制造一个半导体元器件的方法
DE10339985B4 (de) 2003-08-29 2008-12-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer transparenten Kontaktschicht und Verfahren zu dessen Herstellung
JP4195352B2 (ja) * 2003-09-10 2008-12-10 三星エスディアイ株式会社 発光素子基板およびそれを用いた発光素子
JP3801160B2 (ja) * 2003-09-11 2006-07-26 セイコーエプソン株式会社 半導体素子、半導体装置、半導体素子の製造方法、半導体装置の製造方法及び電子機器
US20050205883A1 (en) * 2004-03-19 2005-09-22 Wierer Jonathan J Jr Photonic crystal light emitting device
TWI232604B (en) 2004-07-23 2005-05-11 Supernova Optoelectronics Corp Manufacturing method of metal reflection layer for gallium nitride based light-emitting diode
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TWI235511B (en) 2004-11-03 2005-07-01 Chipmos Technologies Inc Method of manufacturing light emitting diode package and structure of the same
TWI251355B (en) 2004-12-22 2006-03-11 Opto Tech Corp A LED array package structure and method thereof
TWI251357B (en) 2005-06-21 2006-03-11 Epitech Technology Corp Light-emitting diode and method for manufacturing the same

Also Published As

Publication number Publication date
US20110186904A1 (en) 2011-08-04
JP2009535826A (ja) 2009-10-01
DE102006033502A1 (de) 2007-11-15
CN101432900B (zh) 2012-05-02
WO2007124737A1 (de) 2007-11-08
KR20090013218A (ko) 2009-02-04
TW200802985A (en) 2008-01-01
US20090218587A1 (en) 2009-09-03
KR101329435B1 (ko) 2013-11-14
CN101432900A (zh) 2009-05-13
EP2013917A1 (de) 2009-01-14
JP5138675B2 (ja) 2013-02-06
US8258521B2 (en) 2012-09-04
US8088649B2 (en) 2012-01-03

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