JP6410870B2 - 発光ダイオード - Google Patents
発光ダイオード Download PDFInfo
- Publication number
- JP6410870B2 JP6410870B2 JP2017091853A JP2017091853A JP6410870B2 JP 6410870 B2 JP6410870 B2 JP 6410870B2 JP 2017091853 A JP2017091853 A JP 2017091853A JP 2017091853 A JP2017091853 A JP 2017091853A JP 6410870 B2 JP6410870 B2 JP 6410870B2
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- layer
- multilayer structure
- emitting diode
- light emitting
- semiconductor
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- 239000004065 semiconductor Substances 0.000 claims description 160
- 239000000758 substrate Substances 0.000 claims description 128
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 47
- 229910002601 GaN Inorganic materials 0.000 claims description 46
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 226
- 229910052751 metal Inorganic materials 0.000 description 115
- 239000002184 metal Substances 0.000 description 115
- 150000001875 compounds Chemical class 0.000 description 25
- 238000000034 method Methods 0.000 description 21
- 230000004888 barrier function Effects 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 20
- 229910052594 sapphire Inorganic materials 0.000 description 12
- 239000010980 sapphire Substances 0.000 description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 239000012790 adhesive layer Substances 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000000227 grinding Methods 0.000 description 5
- 125000005842 heteroatom Chemical group 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 238000001878 scanning electron micrograph Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 229910015363 Au—Sn Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- -1 nitride compound Chemical class 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Weting (AREA)
Description
微小な錐体を有する複数の凸部の形成は、マスクパターンを半導体積層構造の表面上に形成させるステップと、マスクパターンをエッチングマスクとして用いることによって半導体積層構造にドライエッチングを行って、複数の凸部を形成させるステップと、マスクパターンを除去するステップと、複数の凸部の頂面にウェットエッチングを行うことによって微小な錐体を形成するステップとを含んでもよい。
。これらの接着層61、63、及び65は、Ni、Ti、Cr、及びPtのうちの少なくとも1つを含んでもよい。加えて、第1の金属層64の下に配置されている第2の金属層66の底面は、接着層67を介して、底部接合金属68を有するように形成されていてもよい。底部接合金属68は、支持基板60と半導体積層構造30との間に介在している接合金属43と対称になっており、接合金属43と同じ材料、例えばAu又はAu−Sn(80/20重量%)で作られていてよい。底部接合金属68を用いて、支持基板60を電子回路又はPCB基板に取り付けてよい。
Claims (7)
- 支持基板と、
前記支持基板上に配置されているとともに、窒化ガリウム系p型半導体層と、窒化ガリウム系活性層と、窒化ガリウム系n型半導体層とを含む半導体積層構造と、
前記半導体積層構造上の絶縁層と、
前記支持基板と前記半導体積層構造との間に配置された反射層と、
を含む発光ダイオードであって、
前記半導体積層構造は、複数の凸部と、前記凸部の頂面上に形成された微小な錐体とを含み、
前記複数の凸部は、底面が六角形状を有する錐台であって、ハニカム状に配列されており、
前記凸部の頂面は、円形であり、
前記微小な錐体は、前記凸部の頂面上のみに配置されており、
前記絶縁層は、前記複数の凸部の形状に沿って凸形状を有する、発光ダイオード。 - 前記半導体積層構造が、5×106/cm2以下の転位密度を有するように形成されている、請求項1に記載の発光ダイオード。
- 350mAにおいて20%未満のドループを示す、請求項1に記載の発光ダイオード。
- 前記半導体積層構造が、窒化ガリウム基板上に成長させた半導体層で形成されている、請求項1に記載の発光ダイオード。
- 前記複数の凸部が互いに隣接しており、その結果、底部が先鋭であるV字溝が、前記凸部間の領域内に形成されている、請求項1乃至4いずれか一項に記載の発光ダイオード。
- 前記凸部の平均高さが3μmを超えており、前記微小な錐体の平均高さが1μm以下である、請求項1乃至5のいずれか一項に記載の発光ダイオード。
- 前記半導体積層構造上に設けられた電極をさらに有し、
前記電極は、前記絶縁層に設けられた開口を介して前記半導体積層構造と接続される、請求項1に記載の発光ダイオード。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2012-0016999 | 2012-02-20 | ||
KR20120016999 | 2012-02-20 | ||
KR1020130016305A KR102022659B1 (ko) | 2012-02-20 | 2013-02-15 | 고효율 발광 다이오드 및 그것을 제조하는 방법 |
KR10-2013-0016305 | 2013-02-15 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014558673A Division JP6170079B2 (ja) | 2012-02-20 | 2013-02-18 | 高効率発光ダイオード、及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017163153A JP2017163153A (ja) | 2017-09-14 |
JP6410870B2 true JP6410870B2 (ja) | 2018-10-24 |
Family
ID=49218927
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2014558673A Expired - Fee Related JP6170079B2 (ja) | 2012-02-20 | 2013-02-18 | 高効率発光ダイオード、及びその製造方法 |
JP2017091853A Active JP6410870B2 (ja) | 2012-02-20 | 2017-05-02 | 発光ダイオード |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014558673A Expired - Fee Related JP6170079B2 (ja) | 2012-02-20 | 2013-02-18 | 高効率発光ダイオード、及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9362449B2 (ja) |
JP (2) | JP6170079B2 (ja) |
KR (1) | KR102022659B1 (ja) |
CN (1) | CN104285307B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6916777B2 (ja) * | 2016-03-08 | 2021-08-11 | アルパッド株式会社 | 半導体発光素子およびその製造方法 |
JP6579038B2 (ja) | 2016-05-30 | 2019-09-25 | 豊田合成株式会社 | 半導体発光素子の製造方法 |
FR3052915A1 (fr) | 2016-06-17 | 2017-12-22 | Commissariat Energie Atomique | Procede de fabrication d'une diode electroluminescente au nitrure de gallium |
DE102016112587A1 (de) * | 2016-07-08 | 2018-01-11 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
KR102502608B1 (ko) | 2018-06-11 | 2023-02-22 | 삼성디스플레이 주식회사 | 발광 소자, 그 제조방법 및 발광 소자를 포함하는 표시 장치 |
CN110412082B (zh) * | 2019-06-20 | 2022-11-29 | 黄辉 | 一种半导体多孔晶体薄膜传感器及制备方法 |
JP7165858B2 (ja) | 2020-06-30 | 2022-11-07 | 日亜化学工業株式会社 | 発光素子の製造方法 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4110222B2 (ja) | 2003-08-20 | 2008-07-02 | 住友電気工業株式会社 | 発光ダイオード |
JP4881003B2 (ja) * | 2003-09-26 | 2012-02-22 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 放射を発する薄膜半導体チップ |
US7897420B2 (en) * | 2005-01-11 | 2011-03-01 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diodes (LEDs) with improved light extraction by roughening |
JP2007173579A (ja) | 2005-12-22 | 2007-07-05 | Matsushita Electric Works Ltd | 半導体発光素子およびその製造方法 |
JP2007214500A (ja) * | 2006-02-13 | 2007-08-23 | Mitsubishi Chemicals Corp | 半導体部材及びその製造方法 |
JP2007300069A (ja) * | 2006-04-04 | 2007-11-15 | Toyoda Gosei Co Ltd | 発光素子、この発光素子を用いた発光装置及びこの発光素子の製造方法 |
JP4993371B2 (ja) * | 2007-11-21 | 2012-08-08 | サンケン電気株式会社 | 半導体発光素子用ウエーハの粗面化方法及び半導体発光素子 |
JP5286046B2 (ja) * | 2007-11-30 | 2013-09-11 | 株式会社半導体エネルギー研究所 | 光電変換装置の製造方法 |
CN101874307B (zh) * | 2007-11-30 | 2014-06-18 | 加利福尼亚大学董事会 | 通过表面粗糙化的高光提取效率的基于氮化物的发光二极管 |
CN101884088A (zh) * | 2008-02-28 | 2010-11-10 | 普瑞光电股份有限公司 | 具有高的光抽取的发光二极管芯片及其制造方法 |
JP5187063B2 (ja) | 2008-08-18 | 2013-04-24 | 信越半導体株式会社 | 発光素子 |
JP5282503B2 (ja) * | 2008-09-19 | 2013-09-04 | 日亜化学工業株式会社 | 半導体発光素子 |
JP2010129596A (ja) * | 2008-11-25 | 2010-06-10 | Shin Etsu Handotai Co Ltd | 発光素子及びその製造方法 |
KR101533817B1 (ko) * | 2008-12-31 | 2015-07-09 | 서울바이오시스 주식회사 | 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법 |
WO2010092736A1 (ja) * | 2009-02-16 | 2010-08-19 | 日本碍子株式会社 | 3b族窒化物の結晶成長方法及び3b族窒化物結晶 |
US10223701B2 (en) * | 2009-08-06 | 2019-03-05 | Excalibur Ip, Llc | System and method for verified monetization of commercial campaigns |
JP2011060966A (ja) * | 2009-09-09 | 2011-03-24 | Panasonic Electric Works Co Ltd | 発光装置 |
US8502465B2 (en) * | 2009-09-18 | 2013-08-06 | Soraa, Inc. | Power light emitting diode and method with current density operation |
JP2011146650A (ja) * | 2010-01-18 | 2011-07-28 | Sumitomo Electric Ind Ltd | GaN系半導体発光素子およびその製造方法 |
JP2011211075A (ja) * | 2010-03-30 | 2011-10-20 | Toyoda Gosei Co Ltd | Iii族窒化物半導体発光素子の製造方法 |
JP5725927B2 (ja) | 2010-05-18 | 2015-05-27 | ソウル バイオシス カンパニー リミテッドSeoul Viosys Co.,Ltd. | 高効率発光ダイオード及びその製造方法 |
KR101671793B1 (ko) * | 2010-07-01 | 2016-11-04 | 삼성전자주식회사 | 반도체 발광소자 및 그 제조방법 |
US20120126198A1 (en) * | 2010-10-27 | 2012-05-24 | The Regents Of The University Of California | Light emitting diode for droop improvement |
JP2012124257A (ja) * | 2010-12-07 | 2012-06-28 | Toshiba Corp | 半導体発光素子及びその製造方法 |
TWI422068B (zh) * | 2011-02-18 | 2014-01-01 | Univ Nat Cheng Kung | 粗化方法及具粗化表面之發光二極體製備方法 |
US8685774B2 (en) * | 2011-12-27 | 2014-04-01 | Sharp Laboratories Of America, Inc. | Method for fabricating three-dimensional gallium nitride structures with planar surfaces |
-
2013
- 2013-02-15 KR KR1020130016305A patent/KR102022659B1/ko active IP Right Grant
- 2013-02-18 CN CN201380010283.1A patent/CN104285307B/zh active Active
- 2013-02-18 JP JP2014558673A patent/JP6170079B2/ja not_active Expired - Fee Related
-
2014
- 2014-08-20 US US14/464,179 patent/US9362449B2/en active Active
-
2017
- 2017-05-02 JP JP2017091853A patent/JP6410870B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
US9362449B2 (en) | 2016-06-07 |
CN104285307A (zh) | 2015-01-14 |
KR102022659B1 (ko) | 2019-11-04 |
US20140353582A1 (en) | 2014-12-04 |
JP6170079B2 (ja) | 2017-07-26 |
CN104285307B (zh) | 2016-08-10 |
JP2017163153A (ja) | 2017-09-14 |
JP2015509663A (ja) | 2015-03-30 |
KR20130095677A (ko) | 2013-08-28 |
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