JP6170079B2 - 高効率発光ダイオード、及びその製造方法 - Google Patents
高効率発光ダイオード、及びその製造方法 Download PDFInfo
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- JP6170079B2 JP6170079B2 JP2014558673A JP2014558673A JP6170079B2 JP 6170079 B2 JP6170079 B2 JP 6170079B2 JP 2014558673 A JP2014558673 A JP 2014558673A JP 2014558673 A JP2014558673 A JP 2014558673A JP 6170079 B2 JP6170079 B2 JP 6170079B2
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- gallium nitride
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- emitting diode
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- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 165
- 239000000758 substrate Substances 0.000 claims description 135
- 229910002601 GaN Inorganic materials 0.000 claims description 56
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 56
- 238000000034 method Methods 0.000 claims description 27
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 7
- 238000000227 grinding Methods 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 7
- 238000001020 plasma etching Methods 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 238000009835 boiling Methods 0.000 claims description 4
- 238000009616 inductively coupled plasma Methods 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 226
- 229910052751 metal Inorganic materials 0.000 description 115
- 239000002184 metal Substances 0.000 description 115
- 150000001875 compounds Chemical class 0.000 description 24
- 230000004888 barrier function Effects 0.000 description 20
- 229910052594 sapphire Inorganic materials 0.000 description 12
- 239000010980 sapphire Substances 0.000 description 12
- 239000012790 adhesive layer Substances 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 125000005842 heteroatom Chemical group 0.000 description 5
- 238000001878 scanning electron micrograph Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910015363 Au—Sn Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- -1 nitride compound Chemical class 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Weting (AREA)
Description
微小な錐体を有する複数の凸部の形成は、マスクパターンを半導体積層構造の表面上に形成させるステップと、マスクパターンをエッチングマスクとして用いることによって半導体積層構造にドライエッチングを行って、複数の凸部を形成させるステップと、マスクパターンを除去するステップと、複数の凸部の頂面にウェットエッチングを行うことによって微小な錐体を形成するステップとを含んでもよい。
高い転位密度を有する。一方、本発明の例示的な実施形態による半導体積層構造30は、窒化ガリウム基板を成長基板として用いて成長させた半導体層25、27、及び29を用いるので、5×l06/cm2以下という低い転位密度を有するように形成できる。転位密度の下限値は特に限定されないが、1×104/cm2以上又は1×l06/cm2以上に設定してよい。電流の増加に伴って生じるドループは、半導体積層構造30内の転位密度を低下させることによって低減できる。
の厚みは、n型化合物半導体層25の厚みよりも薄い。例えば、n型化合物半導体層25の厚みは約6μmであってよく、凸部25aの平均高さは、3〜5μmの範囲内であってよい。さらに、円錐台形状を有する凸部25aは互いに隣接していてよく、凸部25a間の領域は、図示されているように、V字溝を形成していてもよい。凸部25a間の領域はV字溝によって形成されており、これらの溝により、内部全反射による、発光ダイオード内の活性層27から発生される光の損失を低減できる。
張部51aの真下に集中的に流れるのを防ぐことができる。
に異なる。
)などのようなプロセスによって、基板21上に成長させてよい。
も覆ってよい。しかしながら、上部絶縁層47は、電極拡張部51aが形成される平面を露出させる開口部47aを有する。
個々のチップに分割させて、図5の発光ダイオードを完成させるようにする。
部121間の領域である突出部125aが連続的に接続されている。すなわち、突出部125aは、凹部121によって連続的に形成され、微小な錐体125bは、突出部125aの上に形成されている。加えて、各凹部は、円錐形状を有するように形成させてよい。
Claims (7)
- 窒化ガリウム系n型半導体層と、窒化ガリウム系活性層と、窒化ガリウム系p型半導体層とを含む半導体層を窒化ガリウム基板上に成長させることによって、半導体積層構造を形成させるステップと、
支持基板を前記半導体積層構造上に形成させるステップと、
前記窒化ガリウム基板を除去することで前記半導体積層構造の表面を露出させるステップと、
前記露出された半導体積層構造の表面上にマスクパターンを形成し、前記マスクパターンをエッチングマスクとして用いることによって、前記半導体積層構造の表面にドライエッチングを行って、複数の凸部を形成させるステップと、
前記マスクパターンを除去するステップと、
前記複数の凸部の頂面にウェットエッチングを行うことによって、微小な錐体を形成させるステップと、を含み、
前記複数の凸部は、円錐台形状を有する、発光ダイオードの製造方法。 - KOH又はNaOHの沸騰液を用いて前記ウェットエッチングを行う、請求項1に記載の方法。
- 前記複数の凸部が互いに隣接するように、底部が先鋭であるV字溝を前記凸部間の領域内に形成させる、請求項1に記載の方法。
- 窒化ガリウム系n型半導体層と、窒化ガリウム系活性層と、窒化ガリウム系p型半導体層とを含む半導体層を窒化ガリウム基板上に成長させることによって、半導体積層構造を形成させるステップと、
支持基板を前記半導体積層構造上に形成させるステップと、
窒化ガリウム基板を研削することによって前記窒化ガリウム基板の一部を除去するステップと、
前記半導体積層構造上に残っている前記窒化ガリウム基板の一部を誘導結合型プラズマ反応型イオンエッチング技術によって除去するステップと、
を含む、発光ダイオードの製造方法。 - 前記窒化ガリウム基板を研削後に、前記窒化ガリウム基板を研磨するステップをさらに含む、請求項4に記載の発光ダイオードの製造方法。
- 前記半導体積層構造の表面が露出しているか確認するための試験を行うステップをさらに含む、請求項4に記載の発光ダイオードの製造方法。
- 前記半導体積層構造の表面の表面抵抗を測定することによって前記試験を行う、請求項6に記載の発光ダイオードの製造方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2012-0016999 | 2012-02-20 | ||
KR20120016999 | 2012-02-20 | ||
KR10-2013-0016305 | 2013-02-15 | ||
KR1020130016305A KR102022659B1 (ko) | 2012-02-20 | 2013-02-15 | 고효율 발광 다이오드 및 그것을 제조하는 방법 |
PCT/KR2013/001259 WO2013125823A1 (en) | 2012-02-20 | 2013-02-18 | High efficiency light emitting diode and method of fabricating the same |
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JP2017091853A Division JP6410870B2 (ja) | 2012-02-20 | 2017-05-02 | 発光ダイオード |
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JP2015509663A JP2015509663A (ja) | 2015-03-30 |
JP6170079B2 true JP6170079B2 (ja) | 2017-07-26 |
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JP2014558673A Expired - Fee Related JP6170079B2 (ja) | 2012-02-20 | 2013-02-18 | 高効率発光ダイオード、及びその製造方法 |
JP2017091853A Active JP6410870B2 (ja) | 2012-02-20 | 2017-05-02 | 発光ダイオード |
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US (1) | US9362449B2 (ja) |
JP (2) | JP6170079B2 (ja) |
KR (1) | KR102022659B1 (ja) |
CN (1) | CN104285307B (ja) |
Families Citing this family (7)
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WO2017154973A1 (ja) * | 2016-03-08 | 2017-09-14 | 株式会社 東芝 | 半導体発光素子およびその製造方法 |
JP6579038B2 (ja) * | 2016-05-30 | 2019-09-25 | 豊田合成株式会社 | 半導体発光素子の製造方法 |
FR3052915A1 (fr) * | 2016-06-17 | 2017-12-22 | Commissariat Energie Atomique | Procede de fabrication d'une diode electroluminescente au nitrure de gallium |
DE102016112587A1 (de) * | 2016-07-08 | 2018-01-11 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
KR102502608B1 (ko) * | 2018-06-11 | 2023-02-22 | 삼성디스플레이 주식회사 | 발광 소자, 그 제조방법 및 발광 소자를 포함하는 표시 장치 |
CN110412082B (zh) * | 2019-06-20 | 2022-11-29 | 黄辉 | 一种半导体多孔晶体薄膜传感器及制备方法 |
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JP2012124257A (ja) * | 2010-12-07 | 2012-06-28 | Toshiba Corp | 半導体発光素子及びその製造方法 |
TWI422068B (zh) * | 2011-02-18 | 2014-01-01 | Univ Nat Cheng Kung | 粗化方法及具粗化表面之發光二極體製備方法 |
US8685774B2 (en) * | 2011-12-27 | 2014-04-01 | Sharp Laboratories Of America, Inc. | Method for fabricating three-dimensional gallium nitride structures with planar surfaces |
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2013
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- 2013-02-18 JP JP2014558673A patent/JP6170079B2/ja not_active Expired - Fee Related
- 2013-02-18 CN CN201380010283.1A patent/CN104285307B/zh active Active
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2014
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US9362449B2 (en) | 2016-06-07 |
US20140353582A1 (en) | 2014-12-04 |
KR20130095677A (ko) | 2013-08-28 |
JP2017163153A (ja) | 2017-09-14 |
CN104285307B (zh) | 2016-08-10 |
JP6410870B2 (ja) | 2018-10-24 |
KR102022659B1 (ko) | 2019-11-04 |
JP2015509663A (ja) | 2015-03-30 |
CN104285307A (zh) | 2015-01-14 |
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