JP4699258B2 - フリップチップ発光ダイオード及びその製造方法 - Google Patents
フリップチップ発光ダイオード及びその製造方法 Download PDFInfo
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- JP4699258B2 JP4699258B2 JP2006095168A JP2006095168A JP4699258B2 JP 4699258 B2 JP4699258 B2 JP 4699258B2 JP 2006095168 A JP2006095168 A JP 2006095168A JP 2006095168 A JP2006095168 A JP 2006095168A JP 4699258 B2 JP4699258 B2 JP 4699258B2
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- Prior art keywords
- light emitting
- groove
- nitride semiconductor
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- semiconductor layer
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Description
抵抗R=ρL/S(R:抵抗[Ω]、ρ:比抵抗[Ωcm]、L:長さ[m]、S:断面積[m2 ])
で示されるが、電流経路断面積が減るため、この式により、N型電極39と近接している部分の抵抗は増加する。
31 N型窒化物半導体層
32 活性層
33 P型窒化物半導体層
34 溝絶縁層
35 p型オーミックメタル
36 バリアメタル
37 ボンディングメタル
38 P型電極
39 N型電極
40 溝
41 発光構造物
50 溝のパターン
90 ポジ型フォトレジスト
91 ネガ型フォトレジスト
92 絶縁体
93 絶縁層
d 溝の幅
S 長方形の広さ
Claims (11)
- 光透過性基板上にN型窒化物半導体層、活性層、P型窒化物半導体層を順次に形成する段階と、
前記N型窒化物半導体層の一部領域が露出されるように前記活性層及びP型窒化物半導体層をメサエッチングすることで、N型電極形成領域を設けるメサ形成段階と、
前記形成されたメサとメサの間に位置している前記活性層及びP型窒化物半導体層の所定領域をエッチングし、前記N型窒化物半導体層の領域を露出させる複数の溝を形成することで、発光構造物を複数の発光部に分割する溝形成段階と、
前記形成された溝の表面に絶縁層を形成する溝絶縁段階と、
前記P型窒化物半導体層の上部と前記溝の表面に形成された絶縁層にわたってP型電極を形成するP型電極形成段階と、
前記形成されたメサ上にN型電極を形成するN型電極形成段階
を含み、
前記溝形成段階において、前記メサに近付くほど、前記発光部の面積が次第に減少するように、前記溝と溝の間の間隔が狭まることを特徴とする、フリップチップ発光ダイオードの製造方法。 - 前記メサ形成段階または溝形成段階では、RIE工法によってエッチングすることを特徴とする、請求項1に記載のフリップチップ発光ダイオードの製造方法。
- 前記メサ形成段階または溝形成段階では、前記活性層及びP型窒化物半導体層の所定領域をエッチングすることを特徴とする、請求項1または2に記載のフリップチップ発光ダイオードの製造方法。
- 前記溝形成段階において、前記溝の幅が1μm〜50μmの範囲となるようにエッチングすることを特徴とする、請求項1〜3のいずれか一項に記載のフリップチップ発光ダイオードの製造方法。
- 前記P型電極形成段階において、p型オーミックメタル、バリアメタル、ボンディングメタルを順次に積層することを特徴とする、請求項1〜4のいずれか一項に記載のフリップチップ発光ダイオードの製造方法。
- 前記N型電極形成段階において、n型オーミックメタルを積層することを特徴とする、請求項1〜5のいずれか一項に記載のフリップチップ発光ダイオードの製造方法。
- 光透過性基板と、
前記基板上に、N型窒化物半導体層、活性層、P型窒化物半導体層が順次に形成されてなり、前記N型窒化物半導体層の一部領域が露出されることによって形成されたメサ、および複数のメサとメサの間に位置している前記N型窒化物半導体層が所定幅で露出されるように形成された複数の溝により複数の発光部に分割された発光構造物と、
前記発光構造物の溝の表面にわたって形成される溝絶縁層と、
前記発光構造物のP型窒化物半導体層の上部と前記溝表面に形成された絶縁層にわたって形成されるP型電極と、
前記発光構造物の複数のメサに形成されるN型電極
を含み、
前記発光構造物に形成された複数の溝は、前記N型電極が形成されたメサに近付くほど、前記発光部の面積が次第に減少するように、隣接する溝間の間隔が狭くなっている、フリップチップ発光ダイオード。 - 前記発光構造物は、活性層及びP型窒化物半導体層がRIEされてなることを特徴とする、請求項7に記載のフリップチップ発光ダイオード。
- 前記発光構造物に形成された溝が、1μm〜50μm範囲の幅を有することを特徴とする、請求項7または8に記載のフリップチップ発光ダイオード。
- 前記P型電極は、p型オーミックメタル、バリアメタル、ボンディングメタルが順次に積層されて形成されたことを特徴とする、請求項7〜9のいずれか一項に記載のフリップチップ発光ダイオード。
- 前記N型電極は、n型オーミックメタルが積層されて形成されたことを特徴とする、請求項7〜10のいずれか一項に記載のフリップチップ発光ダイオード。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2005-0036958 | 2005-05-03 | ||
KR1020050036958A KR100597166B1 (ko) | 2005-05-03 | 2005-05-03 | 플립 칩 발광다이오드 및 그 제조방법 |
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JP2009201870A Division JP2009283984A (ja) | 2005-05-03 | 2009-09-01 | フリップチップ発光ダイオード及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2006313884A JP2006313884A (ja) | 2006-11-16 |
JP4699258B2 true JP4699258B2 (ja) | 2011-06-08 |
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JP2006095168A Expired - Fee Related JP4699258B2 (ja) | 2005-05-03 | 2006-03-30 | フリップチップ発光ダイオード及びその製造方法 |
JP2009201870A Pending JP2009283984A (ja) | 2005-05-03 | 2009-09-01 | フリップチップ発光ダイオード及びその製造方法 |
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Country Status (4)
Country | Link |
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US (1) | US20070012939A1 (ja) |
JP (2) | JP4699258B2 (ja) |
KR (1) | KR100597166B1 (ja) |
CN (1) | CN100435368C (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100887139B1 (ko) * | 2007-02-12 | 2009-03-04 | 삼성전기주식회사 | 질화물 반도체 발광소자 및 제조방법 |
KR101478339B1 (ko) | 2008-06-19 | 2015-01-08 | 서울바이오시스 주식회사 | 발광 소자 및 그 제조 방법 |
EP2311108B1 (en) | 2008-09-30 | 2013-08-21 | LG Innotek Co., Ltd | Semiconductor light emitting device |
KR100999742B1 (ko) * | 2008-09-30 | 2010-12-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR100986485B1 (ko) | 2008-11-21 | 2010-10-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR100962898B1 (ko) | 2008-11-14 | 2010-06-10 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
USRE48774E1 (en) | 2008-11-14 | 2021-10-12 | Suzhou Lekin Semiconductor Co., Ltd. | Semiconductor light emitting device |
JP5549190B2 (ja) | 2009-02-27 | 2014-07-16 | 豊田合成株式会社 | 半導体発光素子の実装体の製造方法、発光装置の製造方法及び半導体発光素子 |
DE102009023849B4 (de) * | 2009-06-04 | 2022-10-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper und optoelektronischer Halbleiterchip |
JP2012164938A (ja) * | 2011-02-09 | 2012-08-30 | Stanley Electric Co Ltd | 半導体発光装置の製造方法 |
CN102185073B (zh) * | 2011-04-01 | 2012-09-19 | 厦门市三安光电科技有限公司 | 一种倒装发光二极管及其制作方法 |
CN103996774A (zh) * | 2013-02-19 | 2014-08-20 | 旭明光电股份有限公司 | 具有电流引导结构的立式发光二极管 |
JP6042238B2 (ja) * | 2013-03-11 | 2016-12-14 | スタンレー電気株式会社 | 発光素子 |
JP6185769B2 (ja) * | 2013-06-24 | 2017-08-23 | スタンレー電気株式会社 | 発光素子 |
KR102099439B1 (ko) * | 2013-10-08 | 2020-04-09 | 엘지이노텍 주식회사 | 발광 소자 및 이를 포함하는 발광 소자 패키지 |
DE102014116133B4 (de) * | 2014-11-05 | 2023-03-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement, Verfahren zum Herstellen eines optoelektronischen Bauelements und Verfahren zum Herstellen einer optoelektronischen Anordnung |
KR102656815B1 (ko) * | 2017-12-27 | 2024-04-15 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 |
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2005
- 2005-05-03 KR KR1020050036958A patent/KR100597166B1/ko not_active IP Right Cessation
-
2006
- 2006-03-30 JP JP2006095168A patent/JP4699258B2/ja not_active Expired - Fee Related
- 2006-04-25 CN CNB2006100769014A patent/CN100435368C/zh not_active Expired - Fee Related
- 2006-04-28 US US11/412,984 patent/US20070012939A1/en not_active Abandoned
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Also Published As
Publication number | Publication date |
---|---|
CN100435368C (zh) | 2008-11-19 |
KR100597166B1 (ko) | 2006-07-04 |
US20070012939A1 (en) | 2007-01-18 |
CN1858921A (zh) | 2006-11-08 |
JP2009283984A (ja) | 2009-12-03 |
JP2006313884A (ja) | 2006-11-16 |
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