KR101255414B1 - 포토마스크 블랭크의 제조 방법 및 포토마스크의 제조 방법 - Google Patents

포토마스크 블랭크의 제조 방법 및 포토마스크의 제조 방법 Download PDF

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KR101255414B1
KR101255414B1 KR1020090131609A KR20090131609A KR101255414B1 KR 101255414 B1 KR101255414 B1 KR 101255414B1 KR 1020090131609 A KR1020090131609 A KR 1020090131609A KR 20090131609 A KR20090131609 A KR 20090131609A KR 101255414 B1 KR101255414 B1 KR 101255414B1
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South Korea
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film
light
thin film
photomask
photomask blank
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KR20100080413A (ko
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도시유끼 스즈끼
마사히로 하시모또
가즈노리 오노
료 오꾸보
가즈야 사까이
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020090131609A 2008-12-29 2009-12-28 포토마스크 블랭크의 제조 방법 및 포토마스크의 제조 방법 Active KR101255414B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008335663A JP5497288B2 (ja) 2008-12-29 2008-12-29 フォトマスクブランクの製造方法及びフォトマスクの製造方法
JPJP-P-2008-335663 2008-12-29

Publications (2)

Publication Number Publication Date
KR20100080413A KR20100080413A (ko) 2010-07-08
KR101255414B1 true KR101255414B1 (ko) 2013-04-17

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KR1020090131609A Active KR101255414B1 (ko) 2008-12-29 2009-12-28 포토마스크 블랭크의 제조 방법 및 포토마스크의 제조 방법

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US (1) US8221941B2 (enExample)
JP (1) JP5497288B2 (enExample)
KR (1) KR101255414B1 (enExample)
DE (1) DE102009060677A1 (enExample)
TW (1) TWI463247B (enExample)

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JP5702920B2 (ja) * 2008-06-25 2015-04-15 Hoya株式会社 位相シフトマスクブランク、位相シフトマスクおよび位相シフトマスクブランクの製造方法
JP2010217514A (ja) * 2009-03-17 2010-09-30 Toppan Printing Co Ltd フォトマスクの製造方法
JP5409298B2 (ja) * 2009-11-26 2014-02-05 Ｈｏｙａ株式会社 マスクブランク及び転写用マスク並びにそれらの製造方法
TWI519888B (zh) * 2010-04-09 2016-02-01 Hoya Corp Phase shift mask substrate and its manufacturing method, with phase shift mask
JP5682493B2 (ja) * 2010-08-04 2015-03-11 信越化学工業株式会社 バイナリーフォトマスクブランク及びバイナリーフォトマスクの製造方法
JP5644293B2 (ja) 2010-09-10 2014-12-24 信越化学工業株式会社 遷移金属ケイ素系材料膜の設計方法
JP5154626B2 (ja) 2010-09-30 2013-02-27 Ｈｏｙａ株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法
JP5653888B2 (ja) * 2010-12-17 2015-01-14 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、及び半導体デバイスの製造方法
JP5879951B2 (ja) * 2011-11-21 2016-03-08 信越化学工業株式会社 光パターン照射方法、ハーフトーン位相シフトマスク及びハーフトーン位相シフトマスクブランク
EP2594994B1 (en) 2011-11-21 2016-05-18 Shin-Etsu Chemical Co., Ltd. Light pattern exposure method
JP6173733B2 (ja) * 2012-03-23 2017-08-02 Hoya株式会社 マスクブランク、転写用マスク及びこれらの製造方法
JP5596111B2 (ja) * 2012-12-05 2014-09-24 Ｈｏｙａ株式会社 半導体デバイスの製造方法
JP5868905B2 (ja) 2013-07-03 2016-02-24 信越化学工業株式会社 フォトマスクブランクの製造方法およびフォトマスクブランク
JP6234898B2 (ja) * 2013-09-25 2017-11-22 信越化学工業株式会社 フォトマスクブランクの製造方法
JP5775631B2 (ja) * 2014-08-06 2015-09-09 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法
US10551733B2 (en) 2015-03-24 2020-02-04 Hoya Corporation Mask blanks, phase shift mask, and method for manufacturing semiconductor device
JP6418035B2 (ja) 2015-03-31 2018-11-07 信越化学工業株式会社 位相シフトマスクブランクス及び位相シフトマスク
JP5962811B2 (ja) * 2015-04-22 2016-08-03 信越化学工業株式会社 光パターン照射方法
JP2016095533A (ja) * 2016-01-25 2016-05-26 信越化学工業株式会社 光パターン照射方法
KR102313892B1 (ko) 2016-03-29 2021-10-15 호야 가부시키가이샤 마스크 블랭크, 마스크 블랭크의 제조 방법, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
JP6683578B2 (ja) * 2016-09-23 2020-04-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
US10983430B2 (en) * 2018-02-22 2021-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Mask assembly and haze acceleration method
JP7059234B2 (ja) * 2018-11-30 2022-04-25 Hoya株式会社 フォトマスクブランク、フォトマスクの製造方法及び表示装置の製造方法
TWI782237B (zh) * 2018-11-30 2022-11-01 日商Ｈｏｙａ股份有限公司 光罩基底、光罩之製造方法及顯示裝置之製造方法
TWI835695B (zh) * 2018-11-30 2024-03-11 日商Ｈｏｙａ股份有限公司 光罩基底、光罩之製造方法及顯示裝置之製造方法
JP7413092B2 (ja) * 2020-03-12 2024-01-15 Hoya株式会社 フォトマスクブランク、フォトマスクブランクの製造方法、フォトマスクの製造方法及び表示装置の製造方法
JP2022045198A (ja) * 2020-09-08 2022-03-18 凸版印刷株式会社 位相シフトマスクブランク、位相シフトマスク及び位相シフトマスクの製造方法

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KR20050035262A (ko) * 2005-02-04 2005-04-15 호야 가부시키가이샤 리소그래피 마스크 블랭크
KR20060046073A (ko) * 2004-05-18 2006-05-17 신에쓰 가가꾸 고교 가부시끼가이샤 포토마스크 블랭크 및 포토마스크의 제조 방법
KR100617389B1 (ko) * 2005-05-16 2006-08-31 주식회사 피케이엘 헤이즈 방지를 위한 위상편이 마스크

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JP2924791B2 (ja) * 1996-06-18 1999-07-26 日本電気株式会社 フォトマスク及びフォトマスクの製造方法
JP2001033939A (ja) * 1999-05-19 2001-02-09 Semiconductor Leading Edge Technologies Inc マスクブランク若しくはマスクとそれらの製造方法およびそのマスクを用いた露光方法
JP2002156742A (ja) * 2000-11-20 2002-05-31 Shin Etsu Chem Co Ltd 位相シフトマスクブランク、位相シフトマスク及びこれらの製造方法
JP2002229183A (ja) 2000-12-01 2002-08-14 Hoya Corp リソグラフィーマスクブランク及びその製造方法
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JP4026000B2 (ja) 2003-01-22 2007-12-26 信越化学工業株式会社 フォトマスクブランクの製造方法、反りの低減方法及び膜の耐薬品性の向上方法、並びにフォトマスク
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JP2002162726A (ja) * 2000-09-12 2002-06-07 Hoya Corp 位相シフトマスクブランクの製造方法、及び位相シフトマスクの製造方法
KR20060046073A (ko) * 2004-05-18 2006-05-17 신에쓰 가가꾸 고교 가부시끼가이샤 포토마스크 블랭크 및 포토마스크의 제조 방법
KR20050035262A (ko) * 2005-02-04 2005-04-15 호야 가부시키가이샤 리소그래피 마스크 블랭크
KR100617389B1 (ko) * 2005-05-16 2006-08-31 주식회사 피케이엘 헤이즈 방지를 위한 위상편이 마스크

Also Published As

Publication number Publication date
DE102009060677A1 (de) 2010-08-19
US20100167185A1 (en) 2010-07-01
JP5497288B2 (ja) 2014-05-21
JP2010156880A (ja) 2010-07-15
TWI463247B (zh) 2014-12-01
KR20100080413A (ko) 2010-07-08
TW201030455A (en) 2010-08-16
US8221941B2 (en) 2012-07-17

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