KR101255414B1 - 포토마스크 블랭크의 제조 방법 및 포토마스크의 제조 방법 - Google Patents

포토마스크 블랭크의 제조 방법 및 포토마스크의 제조 방법 Download PDF

Info

Publication number
KR101255414B1
KR101255414B1 KR1020090131609A KR20090131609A KR101255414B1 KR 101255414 B1 KR101255414 B1 KR 101255414B1 KR 1020090131609 A KR1020090131609 A KR 1020090131609A KR 20090131609 A KR20090131609 A KR 20090131609A KR 101255414 B1 KR101255414 B1 KR 101255414B1
Authority
KR
South Korea
Prior art keywords
film
light
thin film
photomask
photomask blank
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020090131609A
Other languages
English (en)
Korean (ko)
Other versions
KR20100080413A (ko
Inventor
도시유끼 스즈끼
마사히로 하시모또
가즈노리 오노
료 오꾸보
가즈야 사까이
Original Assignee
호야 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20100080413A publication Critical patent/KR20100080413A/ko
Application granted granted Critical
Publication of KR101255414B1 publication Critical patent/KR101255414B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020090131609A 2008-12-29 2009-12-28 포토마스크 블랭크의 제조 방법 및 포토마스크의 제조 방법 Active KR101255414B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008335663A JP5497288B2 (ja) 2008-12-29 2008-12-29 フォトマスクブランクの製造方法及びフォトマスクの製造方法
JPJP-P-2008-335663 2008-12-29

Publications (2)

Publication Number Publication Date
KR20100080413A KR20100080413A (ko) 2010-07-08
KR101255414B1 true KR101255414B1 (ko) 2013-04-17

Family

ID=42285359

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090131609A Active KR101255414B1 (ko) 2008-12-29 2009-12-28 포토마스크 블랭크의 제조 방법 및 포토마스크의 제조 방법

Country Status (5)

Country Link
US (1) US8221941B2 (enExample)
JP (1) JP5497288B2 (enExample)
KR (1) KR101255414B1 (enExample)
DE (1) DE102009060677A1 (enExample)
TW (1) TWI463247B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5702920B2 (ja) * 2008-06-25 2015-04-15 Hoya株式会社 位相シフトマスクブランク、位相シフトマスクおよび位相シフトマスクブランクの製造方法
JP2010217514A (ja) * 2009-03-17 2010-09-30 Toppan Printing Co Ltd フォトマスクの製造方法
JP5409298B2 (ja) * 2009-11-26 2014-02-05 Ｈｏｙａ株式会社 マスクブランク及び転写用マスク並びにそれらの製造方法
CN102834773B (zh) * 2010-04-09 2016-04-06 Hoya株式会社 相移掩模坯料及其制造方法、以及相移掩模
JP5682493B2 (ja) * 2010-08-04 2015-03-11 信越化学工業株式会社 バイナリーフォトマスクブランク及びバイナリーフォトマスクの製造方法
JP5644293B2 (ja) 2010-09-10 2014-12-24 信越化学工業株式会社 遷移金属ケイ素系材料膜の設計方法
JP5154626B2 (ja) * 2010-09-30 2013-02-27 Ｈｏｙａ株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法
JP5653888B2 (ja) * 2010-12-17 2015-01-14 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、及び半導体デバイスの製造方法
EP3048484B1 (en) 2011-11-21 2020-12-23 Shin-Etsu Chemical Co., Ltd. Light pattern exposure method
JP5879951B2 (ja) 2011-11-21 2016-03-08 信越化学工業株式会社 光パターン照射方法、ハーフトーン位相シフトマスク及びハーフトーン位相シフトマスクブランク
JP6173733B2 (ja) * 2012-03-23 2017-08-02 Hoya株式会社 マスクブランク、転写用マスク及びこれらの製造方法
JP5596111B2 (ja) * 2012-12-05 2014-09-24 Ｈｏｙａ株式会社 半導体デバイスの製造方法
JP5868905B2 (ja) 2013-07-03 2016-02-24 信越化学工業株式会社 フォトマスクブランクの製造方法およびフォトマスクブランク
JP6234898B2 (ja) * 2013-09-25 2017-11-22 信越化学工業株式会社 フォトマスクブランクの製造方法
JP5775631B2 (ja) * 2014-08-06 2015-09-09 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法
US10551733B2 (en) 2015-03-24 2020-02-04 Hoya Corporation Mask blanks, phase shift mask, and method for manufacturing semiconductor device
JP6418035B2 (ja) * 2015-03-31 2018-11-07 信越化学工業株式会社 位相シフトマスクブランクス及び位相シフトマスク
JP5962811B2 (ja) * 2015-04-22 2016-08-03 信越化学工業株式会社 光パターン照射方法
JP2016095533A (ja) * 2016-01-25 2016-05-26 信越化学工業株式会社 光パターン照射方法
KR102313892B1 (ko) 2016-03-29 2021-10-15 호야 가부시키가이샤 마스크 블랭크, 마스크 블랭크의 제조 방법, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
JP6683578B2 (ja) * 2016-09-23 2020-04-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
US10983430B2 (en) 2018-02-22 2021-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Mask assembly and haze acceleration method
TWI782237B (zh) * 2018-11-30 2022-11-01 日商Ｈｏｙａ股份有限公司 光罩基底、光罩之製造方法及顯示裝置之製造方法
JP7059234B2 (ja) * 2018-11-30 2022-04-25 Hoya株式会社 フォトマスクブランク、フォトマスクの製造方法及び表示装置の製造方法
TWI847949B (zh) * 2018-11-30 2024-07-01 日商Ｈｏｙａ股份有限公司 光罩基底、光罩之製造方法及顯示裝置之製造方法
JP7413092B2 (ja) * 2020-03-12 2024-01-15 Hoya株式会社 フォトマスクブランク、フォトマスクブランクの製造方法、フォトマスクの製造方法及び表示装置の製造方法
JP7801845B2 (ja) * 2020-09-08 2026-01-19 テクセンドフォトマスク株式会社 位相シフトマスクブランク、位相シフトマスク及び位相シフトマスクの製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002162726A (ja) * 2000-09-12 2002-06-07 Hoya Corp 位相シフトマスクブランクの製造方法、及び位相シフトマスクの製造方法
KR20050035262A (ko) * 2005-02-04 2005-04-15 호야 가부시키가이샤 리소그래피 마스크 블랭크
KR20060046073A (ko) * 2004-05-18 2006-05-17 신에쓰 가가꾸 고교 가부시끼가이샤 포토마스크 블랭크 및 포토마스크의 제조 방법
KR100617389B1 (ko) * 2005-05-16 2006-08-31 주식회사 피케이엘 헤이즈 방지를 위한 위상편이 마스크

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2924791B2 (ja) * 1996-06-18 1999-07-26 日本電気株式会社 フォトマスク及びフォトマスクの製造方法
JP2001033939A (ja) * 1999-05-19 2001-02-09 Semiconductor Leading Edge Technologies Inc マスクブランク若しくはマスクとそれらの製造方法およびそのマスクを用いた露光方法
JP2002156742A (ja) * 2000-11-20 2002-05-31 Shin Etsu Chem Co Ltd 位相シフトマスクブランク、位相シフトマスク及びこれらの製造方法
JP2002229183A (ja) 2000-12-01 2002-08-14 Hoya Corp リソグラフィーマスクブランク及びその製造方法
JP4466805B2 (ja) * 2001-03-01 2010-05-26 信越化学工業株式会社 位相シフトマスクブランク及び位相シフトマスク
JP4258631B2 (ja) 2002-12-03 2009-04-30 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
WO2004059384A1 (ja) 2002-12-26 2004-07-15 Hoya Corporation リソグラフィーマスクブランク
JP4026000B2 (ja) 2003-01-22 2007-12-26 信越化学工業株式会社 フォトマスクブランクの製造方法、反りの低減方法及び膜の耐薬品性の向上方法、並びにフォトマスク
JP2005241693A (ja) * 2004-02-24 2005-09-08 Shin Etsu Chem Co Ltd ハーフトーン型位相シフトマスクブランク及びその製造方法並びにハーフトーン型位相シフトマスク及びその製造方法
JP4076989B2 (ja) 2004-10-15 2008-04-16 Ｈｏｙａ株式会社 位相シフトマスクブランクス及び位相シフトマスク
JP4578960B2 (ja) 2004-12-27 2010-11-10 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスクの製造方法
JP2006317665A (ja) 2005-05-12 2006-11-24 Shin Etsu Chem Co Ltd 位相シフトマスクブランクおよび位相シフトマスクならびにこれらの製造方法
JP4958149B2 (ja) * 2006-11-01 2012-06-20 Ｈｏｙａ株式会社 位相シフトマスクブランクの製造方法及び位相シフトマスクの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002162726A (ja) * 2000-09-12 2002-06-07 Hoya Corp 位相シフトマスクブランクの製造方法、及び位相シフトマスクの製造方法
KR20060046073A (ko) * 2004-05-18 2006-05-17 신에쓰 가가꾸 고교 가부시끼가이샤 포토마스크 블랭크 및 포토마스크의 제조 방법
KR20050035262A (ko) * 2005-02-04 2005-04-15 호야 가부시키가이샤 리소그래피 마스크 블랭크
KR100617389B1 (ko) * 2005-05-16 2006-08-31 주식회사 피케이엘 헤이즈 방지를 위한 위상편이 마스크

Also Published As

Publication number Publication date
TW201030455A (en) 2010-08-16
JP2010156880A (ja) 2010-07-15
DE102009060677A1 (de) 2010-08-19
JP5497288B2 (ja) 2014-05-21
KR20100080413A (ko) 2010-07-08
TWI463247B (zh) 2014-12-01
US8221941B2 (en) 2012-07-17
US20100167185A1 (en) 2010-07-01

Similar Documents

Publication Publication Date Title
KR101255414B1 (ko) 포토마스크 블랭크의 제조 방법 및 포토마스크의 제조 방법
KR101373966B1 (ko) 포토마스크의 제조 방법
JP5313401B2 (ja) 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスク
JP3722029B2 (ja) 位相シフトマスクブランクの製造方法、及び位相シフトマスクの製造方法
JP5602930B2 (ja) マスクブランクおよび転写用マスク
JP6053836B2 (ja) マスクブランク及び位相シフトマスクの製造方法
KR101153663B1 (ko) 포토마스크 블랭크 및 그 제조 방법과 포토마스크 및 그 제조 방법
KR20170123346A (ko) 마스크 블랭크, 위상 시프트 마스크 및 위상 시프트 마스크의 제조 방법, 및 반도체 장치의 제조 방법
JP6927177B2 (ja) 位相シフト型フォトマスクブランク及び位相シフト型フォトマスク
JP2018116269A (ja) 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスクの製造方法、並びに表示装置の製造方法
JP4831368B2 (ja) グレートーンマスクブランク及びグレートーンマスク
JP4695732B2 (ja) ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスクの製造方法
JP2005316512A (ja) 位相シフトマスクブランクの製造方法、位相シフトマスクの製造方法、及びパターン転写方法
JP5802294B2 (ja) フォトマスクブランクの製造方法及びフォトマスクの製造方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E14-X000 Pre-grant third party observation filed

St.27 status event code: A-2-3-E10-E14-opp-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20160318

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20170322

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20180316

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20190319

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000