KR101242319B1 - 하전 입자선 장치 - Google Patents

하전 입자선 장치 Download PDF

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Publication number
KR101242319B1
KR101242319B1 KR1020117003654A KR20117003654A KR101242319B1 KR 101242319 B1 KR101242319 B1 KR 101242319B1 KR 1020117003654 A KR1020117003654 A KR 1020117003654A KR 20117003654 A KR20117003654 A KR 20117003654A KR 101242319 B1 KR101242319 B1 KR 101242319B1
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KR
South Korea
Prior art keywords
scanning
stage
charged particle
area
particle beam
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KR1020117003654A
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English (en)
Korean (ko)
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KR20110036619A (ko
Inventor
다까시 히로이
야스히로 군지
히로시 미야이
마사아끼 노지리
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가부시키가이샤 히다치 하이테크놀로지즈
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Publication of KR20110036619A publication Critical patent/KR20110036619A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20278—Motorised movement
    • H01J2237/20285—Motorised movement computer-controlled
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
KR1020117003654A 2008-09-12 2009-08-28 하전 입자선 장치 Active KR101242319B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2008-234270 2008-09-12
JP2008234270A JP5286004B2 (ja) 2008-09-12 2008-09-12 基板の検査装置、および、基板の検査方法
PCT/JP2009/004205 WO2010029700A1 (ja) 2008-09-12 2009-08-28 荷電粒子線装置

Publications (2)

Publication Number Publication Date
KR20110036619A KR20110036619A (ko) 2011-04-07
KR101242319B1 true KR101242319B1 (ko) 2013-03-11

Family

ID=42004966

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117003654A Active KR101242319B1 (ko) 2008-09-12 2009-08-28 하전 입자선 장치

Country Status (4)

Country Link
US (1) US8421010B2 (https=)
JP (1) JP5286004B2 (https=)
KR (1) KR101242319B1 (https=)
WO (1) WO2010029700A1 (https=)

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JP2011158439A (ja) * 2010-02-04 2011-08-18 Hitachi High-Technologies Corp 電子線を用いた外観検査装置
JP5722551B2 (ja) * 2010-05-13 2015-05-20 株式会社日立ハイテクノロジーズ 欠陥検査方法及びその装置
KR20120045774A (ko) * 2010-11-01 2012-05-09 삼성전자주식회사 웨이퍼 검사 방법
JP5537448B2 (ja) * 2011-01-21 2014-07-02 株式会社日立ハイテクノロジーズ 荷電粒子線装置、及び画像解析装置
JP5684612B2 (ja) * 2011-03-09 2015-03-18 株式会社日立ハイテクサイエンス Ｘ線分析装置
US9208552B2 (en) * 2011-04-26 2015-12-08 Kla-Tencor Corporation Method and system for hybrid reticle inspection
CA2835713C (en) * 2011-05-13 2023-04-04 Fibics Incorporated Microscopy imaging method and system
JP5460662B2 (ja) 2011-09-07 2014-04-02 株式会社日立ハイテクノロジーズ 領域決定装置、観察装置または検査装置、領域決定方法および領域決定方法を用いた観察方法または検査方法
JP6078234B2 (ja) * 2012-04-13 2017-02-08 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP5948262B2 (ja) * 2013-01-30 2016-07-06 株式会社日立ハイテクノロジーズ 欠陥観察方法および欠陥観察装置
US9536700B2 (en) * 2013-04-22 2017-01-03 Hitachi High-Technologies Corporation Sample observation device
JP6147079B2 (ja) * 2013-05-14 2017-06-14 オリンパス株式会社 顕微鏡システム、貼り合わせ領域の決定方法、及び、プログラム
JP6052934B2 (ja) * 2013-08-14 2016-12-27 株式会社日立製作所 半導体検査方法、半導体検査装置、および半導体素子の製造方法
US9697987B2 (en) 2013-09-26 2017-07-04 Hitachi High-Technologies Corporation Charged particle beam device
JP6266360B2 (ja) * 2014-01-27 2018-01-24 株式会社日立ハイテクノロジーズ 画像処理装置および荷電粒子線装置
CN106199746A (zh) * 2015-05-07 2016-12-07 上海高晶影像科技有限公司 一种使现有安检机成倍提高检测速度的方法
US10879037B2 (en) * 2016-04-27 2020-12-29 Hitachi High-Tech Corporation Charged particle beam device with distance setting between irradiation regions in a scan line
JP6897042B2 (ja) * 2016-09-27 2021-06-30 日本電気株式会社 画像検査装置、画像検査方法および画像検査プログラム
JP2020181629A (ja) * 2017-07-27 2020-11-05 株式会社日立ハイテク 電子線観察装置、電子線観察システム及び電子線観察装置の制御方法
US11776859B2 (en) 2018-12-19 2023-10-03 Kla Corporation Care area based swath speed for throughput and sensitivity improvement
JP2021197257A (ja) * 2020-06-12 2021-12-27 株式会社日立ハイテク 荷電粒子ビーム装置

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KR20080036145A (ko) * 2005-08-12 2008-04-24 가부시키가이샤 에바라 세이사꾸쇼 검출장치 및 검사장치
JP2008252085A (ja) * 2008-03-06 2008-10-16 Hitachi Ltd 荷電粒子線を用いた基板検査装置および基板検査方法
KR100960823B1 (ko) * 2007-01-18 2010-06-07 스미도모쥬기가이고교 가부시키가이샤 하전입자선 조사장치

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JP4002655B2 (ja) * 1998-01-06 2007-11-07 株式会社日立製作所 パターン検査方法およびその装置
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JP2002026093A (ja) * 2000-07-10 2002-01-25 Hitachi Ltd 半導体装置の製造方法
JP3951590B2 (ja) * 2000-10-27 2007-08-01 株式会社日立製作所 荷電粒子線装置
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JP3973372B2 (ja) * 2001-03-23 2007-09-12 株式会社日立製作所 荷電粒子線を用いた基板検査装置および基板検査方法
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JP4564728B2 (ja) * 2003-07-25 2010-10-20 株式会社日立ハイテクノロジーズ 回路パターンの検査装置
JP4564768B2 (ja) 2004-03-23 2010-10-20 株式会社日立ハイテクノロジーズ パターン検査方法及びその装置
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JP4685599B2 (ja) * 2005-11-11 2011-05-18 株式会社日立ハイテクノロジーズ 回路パターンの検査装置
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JP4972472B2 (ja) * 2007-06-13 2012-07-11 株式会社日立ハイテクノロジーズ 半導体検査装置
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KR20080036145A (ko) * 2005-08-12 2008-04-24 가부시키가이샤 에바라 세이사꾸쇼 검출장치 및 검사장치
KR100960823B1 (ko) * 2007-01-18 2010-06-07 스미도모쥬기가이고교 가부시키가이샤 하전입자선 조사장치
JP2008252085A (ja) * 2008-03-06 2008-10-16 Hitachi Ltd 荷電粒子線を用いた基板検査装置および基板検査方法

Also Published As

Publication number Publication date
US8421010B2 (en) 2013-04-16
WO2010029700A1 (ja) 2010-03-18
JP5286004B2 (ja) 2013-09-11
JP2010067533A (ja) 2010-03-25
KR20110036619A (ko) 2011-04-07
US20110163230A1 (en) 2011-07-07

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