KR101191492B1 - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

Info

Publication number
KR101191492B1
KR101191492B1 KR1020080052677A KR20080052677A KR101191492B1 KR 101191492 B1 KR101191492 B1 KR 101191492B1 KR 1020080052677 A KR1020080052677 A KR 1020080052677A KR 20080052677 A KR20080052677 A KR 20080052677A KR 101191492 B1 KR101191492 B1 KR 101191492B1
Authority
KR
South Korea
Prior art keywords
hole
insulating film
semiconductor
semiconductor substrate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020080052677A
Other languages
English (en)
Korean (ko)
Other versions
KR20080107288A (ko
Inventor
미찌히로 가와시따
야스히로 요시무라
나오따까 다나까
다까히로 나이또
다까시 아까자와
Original Assignee
르네사스 일렉트로닉스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 르네사스 일렉트로닉스 가부시키가이샤 filed Critical 르네사스 일렉트로닉스 가부시키가이샤
Publication of KR20080107288A publication Critical patent/KR20080107288A/ko
Application granted granted Critical
Publication of KR101191492B1 publication Critical patent/KR101191492B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/021Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/021Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0234Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes that stop on pads or on electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/021Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0242Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes from the back sides of the chips, wafers or substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/20Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211Through-semiconductor vias, e.g. TSVs
    • H10W20/212Top-view shapes or dispositions, e.g. top-view layouts of the vias
    • H10W20/2125Top-view shapes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7436Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to support a device or a wafer when forming electrical connections thereto
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01221Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
    • H10W72/01225Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in solid form, e.g. by using a powder or by stud bumping
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07221Aligning
    • H10W72/07227Aligning involving guiding structures, e.g. spacers or supporting members
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • H10W72/244Dispositions, e.g. layouts relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251Materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29Bond pads specially adapted therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/921Structures or relative sizes of bond pads
    • H10W72/923Bond pads having multiple stacked layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • H10W72/932Plan-view shape, i.e. in top view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/9415Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/942Dispositions of bond pads relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/20Configurations of stacked chips
    • H10W90/297Configurations of stacked chips characterised by the through-semiconductor vias [TSVs] in the stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020080052677A 2007-06-06 2008-06-04 반도체 장치 및 그 제조 방법 Expired - Fee Related KR101191492B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007150289A JP4937842B2 (ja) 2007-06-06 2007-06-06 半導体装置およびその製造方法
JPJP-P-2007-00150289 2007-06-06

Publications (2)

Publication Number Publication Date
KR20080107288A KR20080107288A (ko) 2008-12-10
KR101191492B1 true KR101191492B1 (ko) 2012-10-15

Family

ID=40180673

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080052677A Expired - Fee Related KR101191492B1 (ko) 2007-06-06 2008-06-04 반도체 장치 및 그 제조 방법

Country Status (5)

Country Link
US (2) US7973415B2 (https=)
JP (1) JP4937842B2 (https=)
KR (1) KR101191492B1 (https=)
CN (1) CN101320702B (https=)
TW (1) TW200908152A (https=)

Families Citing this family (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7791199B2 (en) 2006-11-22 2010-09-07 Tessera, Inc. Packaged semiconductor chips
US8569876B2 (en) 2006-11-22 2013-10-29 Tessera, Inc. Packaged semiconductor chips with array
EP2135280A2 (en) 2007-03-05 2009-12-23 Tessera, Inc. Chips having rear contacts connected by through vias to front contacts
JP2009021433A (ja) * 2007-07-12 2009-01-29 Fujikura Ltd 配線基板及びその製造方法
EP2183770B1 (en) * 2007-07-31 2020-05-13 Invensas Corporation Method of forming through-substrate vias and corresponding decvice
US20090212381A1 (en) * 2008-02-26 2009-08-27 Tessera, Inc. Wafer level packages for rear-face illuminated solid state image sensors
US20100053407A1 (en) * 2008-02-26 2010-03-04 Tessera, Inc. Wafer level compliant packages for rear-face illuminated solid state image sensors
TWI365528B (en) * 2008-06-27 2012-06-01 Advanced Semiconductor Eng Semiconductor structure and method for manufacturing the same
KR100997788B1 (ko) * 2008-06-30 2010-12-02 주식회사 하이닉스반도체 반도체 패키지
US7872332B2 (en) 2008-09-11 2011-01-18 Micron Technology, Inc. Interconnect structures for stacked dies, including penetrating structures for through-silicon vias, and associated systems and methods
JP2010080897A (ja) * 2008-09-29 2010-04-08 Panasonic Corp 半導体装置及びその製造方法
JP4803844B2 (ja) 2008-10-21 2011-10-26 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体パッケージ
JP5455538B2 (ja) * 2008-10-21 2014-03-26 キヤノン株式会社 半導体装置及びその製造方法
JP5434306B2 (ja) * 2008-10-31 2014-03-05 日本電気株式会社 半導体装置及び半導体装置の製造方法
DE102008058001B4 (de) * 2008-11-19 2024-08-29 Austriamicrosystems Ag Verfahren zur Herstellung eines Halbleiterbauelementes und Halbleiterbauelement
US8513119B2 (en) 2008-12-10 2013-08-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming bump structure having tapered sidewalls for stacked dies
US20100171197A1 (en) 2009-01-05 2010-07-08 Hung-Pin Chang Isolation Structure for Stacked Dies
US8198172B2 (en) * 2009-02-25 2012-06-12 Micron Technology, Inc. Methods of forming integrated circuits using donor and acceptor substrates
JP5201048B2 (ja) * 2009-03-25 2013-06-05 富士通株式会社 半導体装置とその製造方法
JP5746167B2 (ja) * 2009-07-30 2015-07-08 クゥアルコム・インコーポレイテッドQualcomm Incorporated システムインパッケージ
US8791549B2 (en) 2009-09-22 2014-07-29 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer backside interconnect structure connected to TSVs
KR101096223B1 (ko) * 2009-10-30 2011-12-22 주식회사 하이닉스반도체 단일측벽콘택에 연결된 매립비트라인을 갖는 반도체장치 제조 방법
US8399180B2 (en) * 2010-01-14 2013-03-19 International Business Machines Corporation Three dimensional integration with through silicon vias having multiple diameters
US8415238B2 (en) * 2010-01-14 2013-04-09 International Business Machines Corporation Three dimensional integration and methods of through silicon via creation
US8304863B2 (en) * 2010-02-09 2012-11-06 International Business Machines Corporation Electromigration immune through-substrate vias
US8541886B2 (en) * 2010-03-09 2013-09-24 Stats Chippac Ltd. Integrated circuit packaging system with via and method of manufacture thereof
US8466059B2 (en) 2010-03-30 2013-06-18 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-layer interconnect structure for stacked dies
US8324511B1 (en) 2010-04-06 2012-12-04 Amkor Technology, Inc. Through via nub reveal method and structure
JP5423572B2 (ja) 2010-05-07 2014-02-19 セイコーエプソン株式会社 配線基板、圧電発振器、ジャイロセンサー、配線基板の製造方法
US8202797B2 (en) 2010-06-22 2012-06-19 Stats Chippac Ltd. Integrated circuit system with recessed through silicon via pads and method of manufacture thereof
US8791575B2 (en) 2010-07-23 2014-07-29 Tessera, Inc. Microelectronic elements having metallic pads overlying vias
US9640437B2 (en) 2010-07-23 2017-05-02 Tessera, Inc. Methods of forming semiconductor elements using micro-abrasive particle stream
US8796135B2 (en) 2010-07-23 2014-08-05 Tessera, Inc. Microelectronic elements with rear contacts connected with via first or via middle structures
US8440554B1 (en) 2010-08-02 2013-05-14 Amkor Technology, Inc. Through via connected backside embedded circuit features structure and method
US8610259B2 (en) 2010-09-17 2013-12-17 Tessera, Inc. Multi-function and shielded 3D interconnects
US8847380B2 (en) 2010-09-17 2014-09-30 Tessera, Inc. Staged via formation from both sides of chip
JP2012064891A (ja) * 2010-09-17 2012-03-29 Toshiba Corp 半導体装置及びその製造方法
US8487445B1 (en) 2010-10-05 2013-07-16 Amkor Technology, Inc. Semiconductor device having through electrodes protruding from dielectric layer
KR101059490B1 (ko) 2010-11-15 2011-08-25 테세라 리써치 엘엘씨 임베드된 트레이스에 의해 구성된 전도성 패드
US8736066B2 (en) 2010-12-02 2014-05-27 Tessera, Inc. Stacked microelectronic assemby with TSVS formed in stages and carrier above chip
US8587126B2 (en) * 2010-12-02 2013-11-19 Tessera, Inc. Stacked microelectronic assembly with TSVs formed in stages with plural active chips
US8637968B2 (en) 2010-12-02 2014-01-28 Tessera, Inc. Stacked microelectronic assembly having interposer connecting active chips
US8610264B2 (en) 2010-12-08 2013-12-17 Tessera, Inc. Compliant interconnects in wafers
US8390130B1 (en) 2011-01-06 2013-03-05 Amkor Technology, Inc. Through via recessed reveal structure and method
US20120193809A1 (en) * 2011-02-01 2012-08-02 Nanya Technology Corp. Integrated circuit device and method for preparing the same
JP5870493B2 (ja) 2011-02-24 2016-03-01 セイコーエプソン株式会社 半導体装置、センサーおよび電子デバイス
JP2012231096A (ja) * 2011-04-27 2012-11-22 Elpida Memory Inc 半導体装置及びその製造方法
US8900994B2 (en) 2011-06-09 2014-12-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method for producing a protective structure
US9076664B2 (en) 2011-10-07 2015-07-07 Freescale Semiconductor, Inc. Stacked semiconductor die with continuous conductive vias
US8796822B2 (en) * 2011-10-07 2014-08-05 Freescale Semiconductor, Inc. Stacked semiconductor devices
US8710670B2 (en) 2011-12-14 2014-04-29 Stats Chippac Ltd. Integrated circuit packaging system with coupling features and method of manufacture thereof
JP5810921B2 (ja) * 2012-01-06 2015-11-11 凸版印刷株式会社 半導体装置の製造方法
CN103240481B (zh) * 2012-02-08 2016-07-06 西安永电电气有限责任公司 焊接工装件
KR102136901B1 (ko) 2012-04-18 2020-07-22 싸이노슈어, 엘엘씨 피코초 레이저 장치 및 그를 사용한 표적 조직의 치료 방법
CN103633013B (zh) * 2012-08-21 2016-06-29 中芯国际集成电路制造(上海)有限公司 硅通孔封装结构的形成方法
US9076715B2 (en) 2013-03-12 2015-07-07 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure for connecting dies and methods of forming the same
US20150187701A1 (en) 2013-03-12 2015-07-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor Devices and Methods of Manufacture Thereof
JP5826782B2 (ja) * 2013-03-19 2015-12-02 株式会社東芝 半導体装置の製造方法
US9082757B2 (en) * 2013-10-31 2015-07-14 Freescale Semiconductor, Inc. Stacked semiconductor devices
US9257641B2 (en) * 2013-11-08 2016-02-09 Industrial Technology Research Institute Via structure, memory array structure, three-dimensional resistance memory and method of forming the same
US9412719B2 (en) 2013-12-19 2016-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. 3DIC interconnect apparatus and method
US10056353B2 (en) 2013-12-19 2018-08-21 Taiwan Semiconductor Manufacturing Company, Ltd. 3DIC interconnect apparatus and method
US9425150B2 (en) 2014-02-13 2016-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-via interconnect structure and method of manufacture
US20150348874A1 (en) 2014-05-29 2015-12-03 Taiwan Semiconductor Manufacturing Company, Ltd. 3DIC Interconnect Devices and Methods of Forming Same
US9543257B2 (en) 2014-05-29 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. 3DIC interconnect devices and methods of forming same
US9455158B2 (en) 2014-05-30 2016-09-27 Taiwan Semiconductor Manufacturing Company, Ltd. 3DIC interconnect devices and methods of forming same
US9449914B2 (en) 2014-07-17 2016-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked integrated circuits with redistribution lines
US9842825B2 (en) * 2014-09-05 2017-12-12 Taiwan Semiconductor Manufacturing Company, Ltd. Substrateless integrated circuit packages and methods of forming same
US10002653B2 (en) 2014-10-28 2018-06-19 Nxp Usa, Inc. Die stack address bus having a programmable width
US10297666B2 (en) * 2015-04-14 2019-05-21 Mitsubishi Electric Corporation Semiconductor device with a well region
JP6648544B2 (ja) * 2016-02-08 2020-02-14 三菱電機株式会社 半導体装置
JP6443362B2 (ja) * 2016-03-03 2018-12-26 株式会社デンソー 半導体装置
CN108257934B (zh) * 2016-12-29 2021-02-19 联华电子股份有限公司 焊垫开口及熔丝焊接口的制作方法与焊垫开口结构
JP6888493B2 (ja) * 2017-09-14 2021-06-16 三菱電機株式会社 半導体装置の製造方法
CN107946239A (zh) * 2017-12-06 2018-04-20 德淮半导体有限公司 硅通孔互连结构及其形成方法
KR102576062B1 (ko) 2018-11-07 2023-09-07 삼성전자주식회사 관통 실리콘 비아를 포함하는 반도체 소자 및 그 제조 방법
CN111128872B (zh) * 2019-12-30 2022-11-25 上海集成电路研发中心有限公司 一种接触孔及其制作方法
US11393791B2 (en) * 2020-01-28 2022-07-19 Micron Technology, Inc. Three-dimensional stacking semiconductor assemblies with near zero bond line thickness
TWI740716B (zh) * 2020-11-16 2021-09-21 旭德科技股份有限公司 基板結構

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3724110B2 (ja) * 1997-04-24 2005-12-07 三菱電機株式会社 半導体装置の製造方法
JP3481444B2 (ja) 1998-01-14 2003-12-22 シャープ株式会社 半導体装置及びその製造方法
JP3918350B2 (ja) 1999-03-05 2007-05-23 セイコーエプソン株式会社 半導体装置の製造方法
JP3731453B2 (ja) * 2000-07-07 2006-01-05 セイコーエプソン株式会社 半導体装置の製造方法
JP3910493B2 (ja) 2002-06-14 2007-04-25 新光電気工業株式会社 半導体装置及びその製造方法
JP2004296894A (ja) * 2003-03-27 2004-10-21 Seiko Epson Corp 半導体装置の製造方法
JP2005093486A (ja) * 2003-09-12 2005-04-07 Seiko Epson Corp 半導体装置の製造方法及び半導体装置
JP4441328B2 (ja) * 2004-05-25 2010-03-31 株式会社ルネサステクノロジ 半導体装置及びその製造方法
KR100570514B1 (ko) 2004-06-18 2006-04-13 삼성전자주식회사 웨이퍼 레벨 칩 스택 패키지 제조 방법
JP4373866B2 (ja) 2004-07-16 2009-11-25 三洋電機株式会社 半導体装置の製造方法
JP4376715B2 (ja) * 2004-07-16 2009-12-02 三洋電機株式会社 半導体装置の製造方法
JP4365750B2 (ja) * 2004-08-20 2009-11-18 ローム株式会社 半導体チップの製造方法、および半導体装置の製造方法
JP2006114545A (ja) * 2004-10-12 2006-04-27 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP4547247B2 (ja) 2004-12-17 2010-09-22 ルネサスエレクトロニクス株式会社 半導体装置
JP4409455B2 (ja) 2005-01-31 2010-02-03 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2006222138A (ja) 2005-02-08 2006-08-24 Matsushita Electric Works Ltd 貫通電極の形成方法
JP4551255B2 (ja) 2005-03-31 2010-09-22 ルネサスエレクトロニクス株式会社 半導体装置
JP4694305B2 (ja) * 2005-08-16 2011-06-08 ルネサスエレクトロニクス株式会社 半導体ウエハの製造方法
JP4380718B2 (ja) * 2007-03-15 2009-12-09 ソニー株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
US8324736B2 (en) 2012-12-04
CN101320702A (zh) 2008-12-10
CN101320702B (zh) 2010-07-21
TW200908152A (en) 2009-02-16
US20110233773A1 (en) 2011-09-29
JP2008305897A (ja) 2008-12-18
KR20080107288A (ko) 2008-12-10
US20090014843A1 (en) 2009-01-15
JP4937842B2 (ja) 2012-05-23
TWI357111B (https=) 2012-01-21
US7973415B2 (en) 2011-07-05

Similar Documents

Publication Publication Date Title
KR101191492B1 (ko) 반도체 장치 및 그 제조 방법
CN113675147B (zh) 封装器件及其形成方法
JP5183708B2 (ja) 半導体装置およびその製造方法
KR100621438B1 (ko) 감광성 폴리머를 이용한 적층 칩 패키지 및 그의 제조 방법
KR100594669B1 (ko) 반도체 장치의 제조 방법, 반도체 장치, 회로 기판 및전자기기
US20170256496A1 (en) Chip package and method for forming the same
JP4601686B2 (ja) 半導体装置および半導体装置の製造方法
JP2009181981A (ja) 半導体装置の製造方法および半導体装置
US11705341B2 (en) Method of fabricating a semiconductor package having redistribution patterns including seed patterns and seed layers
US20090212438A1 (en) Integrated circuit device comprising conductive vias and method of making the same
JP2005327984A (ja) 電子部品及び電子部品実装構造の製造方法
US20070235882A1 (en) Semiconductor device and method for fabricating the same
TW201611186A (zh) 半導體裝置之製造方法
JP2010045371A (ja) 導電性保護膜を有する貫通電極構造体及びその形成方法
KR102900244B1 (ko) 반도체 패키지 및 그의 제조 방법
WO2010100705A1 (ja) 半導体装置及びその製造方法
US8535977B2 (en) Semiconductor device manufacturing method
TWI544555B (zh) 半導體封裝結構及其製造方法
JP2012134526A (ja) 半導体装置
JP2008135553A (ja) 基板積層方法及び基板が積層された半導体装置
US11877518B2 (en) Package for electric device and method of manufacturing the package
US20080012116A1 (en) Semiconductor device and method of forming the same
KR20090127742A (ko) 웨이퍼 레벨 칩 스케일 패키지 및 그 제조방법
US12199027B2 (en) Substrate and manufacturing method thereof

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

J301 Trial decision

Free format text: TRIAL NUMBER: 2011101000675; TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20110128

Effective date: 20120724

PJ1301 Trial decision

St.27 status event code: A-3-3-V10-V15-crt-PJ1301

Decision date: 20120724

Appeal event data comment text: Appeal Kind Category : Appeal against decision to decline refusal, Appeal Ground Text : 2008 0052677

Appeal request date: 20110128

Appellate body name: Patent Examination Board

Decision authority category: Office appeal board

Decision identifier: 2011101000675

PS0901 Examination by remand of revocation

St.27 status event code: A-6-3-E10-E12-rex-PS0901

S901 Examination by remand of revocation
GRNO Decision to grant (after opposition)
PS0701 Decision of registration after remand of revocation

St.27 status event code: A-3-4-F10-F13-rex-PS0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20150917

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20161010

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20161010

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000