KR101191492B1 - 반도체 장치 및 그 제조 방법 - Google Patents
반도체 장치 및 그 제조 방법 Download PDFInfo
- Publication number
- KR101191492B1 KR101191492B1 KR1020080052677A KR20080052677A KR101191492B1 KR 101191492 B1 KR101191492 B1 KR 101191492B1 KR 1020080052677 A KR1020080052677 A KR 1020080052677A KR 20080052677 A KR20080052677 A KR 20080052677A KR 101191492 B1 KR101191492 B1 KR 101191492B1
- Authority
- KR
- South Korea
- Prior art keywords
- hole
- insulating film
- semiconductor
- semiconductor substrate
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
- H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
- H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
- H10W20/0234—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes that stop on pads or on electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
- H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
- H10W20/0242—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes from the back sides of the chips, wafers or substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10W20/211—Through-semiconductor vias, e.g. TSVs
- H10W20/212—Top-view shapes or dispositions, e.g. top-view layouts of the vias
- H10W20/2125—Top-view shapes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7436—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to support a device or a wafer when forming electrical connections thereto
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
- H10W72/01221—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
- H10W72/01225—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in solid form, e.g. by using a powder or by stud bumping
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07221—Aligning
- H10W72/07227—Aligning involving guiding structures, e.g. spacers or supporting members
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
- H10W72/244—Dispositions, e.g. layouts relative to underlying supporting features, e.g. bond pads, RDLs or vias
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/29—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/923—Bond pads having multiple stacked layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/932—Plan-view shape, i.e. in top view
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/942—Dispositions of bond pads relative to underlying supporting features, e.g. bond pads, RDLs or vias
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/20—Configurations of stacked chips
- H10W90/297—Configurations of stacked chips characterised by the through-semiconductor vias [TSVs] in the stacked chips
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007150289A JP4937842B2 (ja) | 2007-06-06 | 2007-06-06 | 半導体装置およびその製造方法 |
| JPJP-P-2007-00150289 | 2007-06-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20080107288A KR20080107288A (ko) | 2008-12-10 |
| KR101191492B1 true KR101191492B1 (ko) | 2012-10-15 |
Family
ID=40180673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020080052677A Expired - Fee Related KR101191492B1 (ko) | 2007-06-06 | 2008-06-04 | 반도체 장치 및 그 제조 방법 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7973415B2 (https=) |
| JP (1) | JP4937842B2 (https=) |
| KR (1) | KR101191492B1 (https=) |
| CN (1) | CN101320702B (https=) |
| TW (1) | TW200908152A (https=) |
Families Citing this family (79)
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| EP2135280A2 (en) | 2007-03-05 | 2009-12-23 | Tessera, Inc. | Chips having rear contacts connected by through vias to front contacts |
| JP2009021433A (ja) * | 2007-07-12 | 2009-01-29 | Fujikura Ltd | 配線基板及びその製造方法 |
| EP2183770B1 (en) * | 2007-07-31 | 2020-05-13 | Invensas Corporation | Method of forming through-substrate vias and corresponding decvice |
| US20090212381A1 (en) * | 2008-02-26 | 2009-08-27 | Tessera, Inc. | Wafer level packages for rear-face illuminated solid state image sensors |
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| TWI365528B (en) * | 2008-06-27 | 2012-06-01 | Advanced Semiconductor Eng | Semiconductor structure and method for manufacturing the same |
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| JP6648544B2 (ja) * | 2016-02-08 | 2020-02-14 | 三菱電機株式会社 | 半導体装置 |
| JP6443362B2 (ja) * | 2016-03-03 | 2018-12-26 | 株式会社デンソー | 半導体装置 |
| CN108257934B (zh) * | 2016-12-29 | 2021-02-19 | 联华电子股份有限公司 | 焊垫开口及熔丝焊接口的制作方法与焊垫开口结构 |
| JP6888493B2 (ja) * | 2017-09-14 | 2021-06-16 | 三菱電機株式会社 | 半導体装置の製造方法 |
| CN107946239A (zh) * | 2017-12-06 | 2018-04-20 | 德淮半导体有限公司 | 硅通孔互连结构及其形成方法 |
| KR102576062B1 (ko) | 2018-11-07 | 2023-09-07 | 삼성전자주식회사 | 관통 실리콘 비아를 포함하는 반도체 소자 및 그 제조 방법 |
| CN111128872B (zh) * | 2019-12-30 | 2022-11-25 | 上海集成电路研发中心有限公司 | 一种接触孔及其制作方法 |
| US11393791B2 (en) * | 2020-01-28 | 2022-07-19 | Micron Technology, Inc. | Three-dimensional stacking semiconductor assemblies with near zero bond line thickness |
| TWI740716B (zh) * | 2020-11-16 | 2021-09-21 | 旭德科技股份有限公司 | 基板結構 |
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| JP3724110B2 (ja) * | 1997-04-24 | 2005-12-07 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JP3481444B2 (ja) | 1998-01-14 | 2003-12-22 | シャープ株式会社 | 半導体装置及びその製造方法 |
| JP3918350B2 (ja) | 1999-03-05 | 2007-05-23 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| JP3731453B2 (ja) * | 2000-07-07 | 2006-01-05 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| JP3910493B2 (ja) | 2002-06-14 | 2007-04-25 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
| JP2004296894A (ja) * | 2003-03-27 | 2004-10-21 | Seiko Epson Corp | 半導体装置の製造方法 |
| JP2005093486A (ja) * | 2003-09-12 | 2005-04-07 | Seiko Epson Corp | 半導体装置の製造方法及び半導体装置 |
| JP4441328B2 (ja) * | 2004-05-25 | 2010-03-31 | 株式会社ルネサステクノロジ | 半導体装置及びその製造方法 |
| KR100570514B1 (ko) | 2004-06-18 | 2006-04-13 | 삼성전자주식회사 | 웨이퍼 레벨 칩 스택 패키지 제조 방법 |
| JP4373866B2 (ja) | 2004-07-16 | 2009-11-25 | 三洋電機株式会社 | 半導体装置の製造方法 |
| JP4376715B2 (ja) * | 2004-07-16 | 2009-12-02 | 三洋電機株式会社 | 半導体装置の製造方法 |
| JP4365750B2 (ja) * | 2004-08-20 | 2009-11-18 | ローム株式会社 | 半導体チップの製造方法、および半導体装置の製造方法 |
| JP2006114545A (ja) * | 2004-10-12 | 2006-04-27 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| JP4547247B2 (ja) | 2004-12-17 | 2010-09-22 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP4409455B2 (ja) | 2005-01-31 | 2010-02-03 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| JP2006222138A (ja) | 2005-02-08 | 2006-08-24 | Matsushita Electric Works Ltd | 貫通電極の形成方法 |
| JP4551255B2 (ja) | 2005-03-31 | 2010-09-22 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP4694305B2 (ja) * | 2005-08-16 | 2011-06-08 | ルネサスエレクトロニクス株式会社 | 半導体ウエハの製造方法 |
| JP4380718B2 (ja) * | 2007-03-15 | 2009-12-09 | ソニー株式会社 | 半導体装置の製造方法 |
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2008
- 2008-04-14 TW TW097113552A patent/TW200908152A/zh not_active IP Right Cessation
- 2008-06-02 CN CN2008101100054A patent/CN101320702B/zh not_active Expired - Fee Related
- 2008-06-04 KR KR1020080052677A patent/KR101191492B1/ko not_active Expired - Fee Related
- 2008-06-05 US US12/133,828 patent/US7973415B2/en not_active Expired - Fee Related
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| US8324736B2 (en) | 2012-12-04 |
| CN101320702A (zh) | 2008-12-10 |
| CN101320702B (zh) | 2010-07-21 |
| TW200908152A (en) | 2009-02-16 |
| US20110233773A1 (en) | 2011-09-29 |
| JP2008305897A (ja) | 2008-12-18 |
| KR20080107288A (ko) | 2008-12-10 |
| US20090014843A1 (en) | 2009-01-15 |
| JP4937842B2 (ja) | 2012-05-23 |
| TWI357111B (https=) | 2012-01-21 |
| US7973415B2 (en) | 2011-07-05 |
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