KR101152366B1 - 액침 리소그래피 시스템에서의 이미징을 모니터링하고제어하기 위한 방법 및 장치 - Google Patents
액침 리소그래피 시스템에서의 이미징을 모니터링하고제어하기 위한 방법 및 장치 Download PDFInfo
- Publication number
- KR101152366B1 KR101152366B1 KR1020067002882A KR20067002882A KR101152366B1 KR 101152366 B1 KR101152366 B1 KR 101152366B1 KR 1020067002882 A KR1020067002882 A KR 1020067002882A KR 20067002882 A KR20067002882 A KR 20067002882A KR 101152366 B1 KR101152366 B1 KR 101152366B1
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- immersion medium
- immersion
- laser beam
- exposure pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/638,927 | 2003-08-11 | ||
| US10/638,927 US7061578B2 (en) | 2003-08-11 | 2003-08-11 | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20060058713A KR20060058713A (ko) | 2006-05-30 |
| KR101152366B1 true KR101152366B1 (ko) | 2012-06-05 |
Family
ID=34135772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020067002882A Expired - Fee Related KR101152366B1 (ko) | 2003-08-11 | 2004-07-23 | 액침 리소그래피 시스템에서의 이미징을 모니터링하고제어하기 위한 방법 및 장치 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7061578B2 (https=) |
| EP (1) | EP1654593B1 (https=) |
| JP (1) | JP2007502539A (https=) |
| KR (1) | KR101152366B1 (https=) |
| CN (1) | CN1826559A (https=) |
| DE (1) | DE602004027261D1 (https=) |
| TW (1) | TWI359470B (https=) |
| WO (1) | WO2005017625A2 (https=) |
Families Citing this family (129)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7372541B2 (en) * | 2002-11-12 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| SG121819A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| SG135052A1 (en) | 2002-11-12 | 2007-09-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| SG157962A1 (en) * | 2002-12-10 | 2010-01-29 | Nikon Corp | Exposure apparatus and method for producing device |
| WO2004053952A1 (ja) * | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| US7948604B2 (en) * | 2002-12-10 | 2011-05-24 | Nikon Corporation | Exposure apparatus and method for producing device |
| KR101101737B1 (ko) * | 2002-12-10 | 2012-01-05 | 가부시키가이샤 니콘 | 노광장치 및 노광방법, 디바이스 제조방법 |
| EP1571697A4 (en) * | 2002-12-10 | 2007-07-04 | Nikon Corp | EXPOSURE SYSTEM AND COMPONENT MANUFACTURING METHOD |
| JP4352874B2 (ja) * | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| US7242455B2 (en) * | 2002-12-10 | 2007-07-10 | Nikon Corporation | Exposure apparatus and method for producing device |
| ATE365962T1 (de) * | 2002-12-19 | 2007-07-15 | Koninkl Philips Electronics Nv | Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts |
| DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
| KR101643112B1 (ko) * | 2003-02-26 | 2016-07-26 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| KR101345474B1 (ko) | 2003-03-25 | 2013-12-27 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| JP4902201B2 (ja) * | 2003-04-07 | 2012-03-21 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
| KR20110104084A (ko) * | 2003-04-09 | 2011-09-21 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
| EP3352010A1 (en) * | 2003-04-10 | 2018-07-25 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
| JP4656057B2 (ja) * | 2003-04-10 | 2011-03-23 | 株式会社ニコン | 液浸リソグラフィ装置用電気浸透素子 |
| SG141426A1 (en) * | 2003-04-10 | 2008-04-28 | Nikon Corp | Environmental system including vacuum scavange for an immersion lithography apparatus |
| KR101431938B1 (ko) | 2003-04-10 | 2014-08-19 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
| SG139733A1 (en) * | 2003-04-11 | 2008-02-29 | Nikon Corp | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
| JP4582089B2 (ja) * | 2003-04-11 | 2010-11-17 | 株式会社ニコン | 液浸リソグラフィ用の液体噴射回収システム |
| KR101289959B1 (ko) * | 2003-04-11 | 2013-07-26 | 가부시키가이샤 니콘 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR20050122269A (ko) * | 2003-04-17 | 2005-12-28 | 가부시키가이샤 니콘 | 액침 리소그래피를 이용하기 위한 오토포커스 소자의광학적 배열 |
| JP4025683B2 (ja) * | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
| TWI295414B (en) * | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| WO2004102646A1 (ja) * | 2003-05-15 | 2004-11-25 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| TW201515064A (zh) | 2003-05-23 | 2015-04-16 | 尼康股份有限公司 | 曝光方法及曝光裝置以及元件製造方法 |
| TWI474380B (zh) * | 2003-05-23 | 2015-02-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
| WO2004107417A1 (ja) | 2003-05-28 | 2004-12-09 | Nikon Corporation | 露光方法及び露光装置、並びにデバイス製造方法 |
| TWI442694B (zh) * | 2003-05-30 | 2014-06-21 | Asml荷蘭公司 | 微影裝置及元件製造方法 |
| US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1486827B1 (en) * | 2003-06-11 | 2011-11-02 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7317504B2 (en) * | 2004-04-08 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP3104396B1 (en) | 2003-06-13 | 2018-03-21 | Nikon Corporation | Exposure method, substrate stage, exposure apparatus, and device manufacturing method |
| KR101476087B1 (ko) | 2003-06-19 | 2014-12-23 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조방법 |
| US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
| DE60308161T2 (de) | 2003-06-27 | 2007-08-09 | Asml Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung eines Artikels |
| US6809794B1 (en) * | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
| WO2005006026A2 (en) * | 2003-07-01 | 2005-01-20 | Nikon Corporation | Using isotopically specified fluids as optical elements |
| EP2843472B1 (en) * | 2003-07-08 | 2016-12-07 | Nikon Corporation | Wafer table for immersion lithography |
| EP2264531B1 (en) | 2003-07-09 | 2013-01-16 | Nikon Corporation | Exposure apparatus and device manufacturing method |
| EP1643543B1 (en) | 2003-07-09 | 2010-11-24 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
| WO2005006418A1 (ja) * | 2003-07-09 | 2005-01-20 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| JP4524669B2 (ja) * | 2003-07-25 | 2010-08-18 | 株式会社ニコン | 投影光学系の検査方法および検査装置 |
| US7326522B2 (en) | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
| US7175968B2 (en) * | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
| EP1503244A1 (en) | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
| KR20190002749A (ko) | 2003-07-28 | 2019-01-08 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법 |
| US7779781B2 (en) | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7700267B2 (en) * | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
| US7579135B2 (en) * | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
| KR101419192B1 (ko) * | 2003-08-29 | 2014-07-15 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| EP2261740B1 (en) | 2003-08-29 | 2014-07-09 | ASML Netherlands BV | Lithographic apparatus |
| TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US7014966B2 (en) * | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
| EP1660925B1 (en) | 2003-09-03 | 2015-04-29 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
| JP4444920B2 (ja) * | 2003-09-19 | 2010-03-31 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| KR101498437B1 (ko) * | 2003-09-29 | 2015-03-03 | 가부시키가이샤 니콘 | 노광장치, 노광방법 및 디바이스 제조방법 |
| EP1672681B8 (en) | 2003-10-08 | 2011-09-21 | Miyagi Nikon Precision Co., Ltd. | Exposure apparatus, substrate carrying method, exposure method, and method for producing device |
| JP2005136364A (ja) * | 2003-10-08 | 2005-05-26 | Zao Nikon Co Ltd | 基板搬送装置、露光装置、並びにデバイス製造方法 |
| KR20060126949A (ko) | 2003-10-08 | 2006-12-11 | 가부시키가이샤 니콘 | 기판 반송 장치와 기판 반송 방법, 노광 장치와 노광 방법,및 디바이스 제조 방법 |
| TW200514138A (en) | 2003-10-09 | 2005-04-16 | Nippon Kogaku Kk | Exposure equipment and exposure method, manufacture method of component |
| US7352433B2 (en) | 2003-10-28 | 2008-04-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7411653B2 (en) * | 2003-10-28 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus |
| EP1531362A3 (en) * | 2003-11-13 | 2007-07-25 | Matsushita Electric Industrial Co., Ltd. | Semiconductor manufacturing apparatus and pattern formation method |
| US7528929B2 (en) * | 2003-11-14 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP3370115A1 (en) * | 2003-12-03 | 2018-09-05 | Nikon Corporation | Exposure apparatus, exposure method and method for producing a device |
| KR101281397B1 (ko) | 2003-12-15 | 2013-07-02 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 및 노광 방법 |
| US20070081133A1 (en) * | 2004-12-14 | 2007-04-12 | Niikon Corporation | Projection exposure apparatus and stage unit, and exposure method |
| JPWO2005057635A1 (ja) * | 2003-12-15 | 2007-07-05 | 株式会社ニコン | 投影露光装置及びステージ装置、並びに露光方法 |
| US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7324274B2 (en) * | 2003-12-24 | 2008-01-29 | Nikon Corporation | Microscope and immersion objective lens |
| CN1938646B (zh) * | 2004-01-20 | 2010-12-15 | 卡尔蔡司Smt股份公司 | 曝光装置和用于投影透镜的测量装置 |
| US7026259B2 (en) * | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
| US7589822B2 (en) * | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
| JP4506674B2 (ja) | 2004-02-03 | 2010-07-21 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| US7050146B2 (en) * | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2005081292A1 (ja) * | 2004-02-20 | 2005-09-01 | Nikon Corporation | 露光装置、供給方法及び回収方法、露光方法、ならびにデバイス製造方法 |
| US8488102B2 (en) * | 2004-03-18 | 2013-07-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
| KR101250155B1 (ko) | 2004-03-25 | 2013-04-05 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| US7898642B2 (en) | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1747499A2 (en) * | 2004-05-04 | 2007-01-31 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
| US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| CN100594430C (zh) | 2004-06-04 | 2010-03-17 | 卡尔蔡司Smt股份公司 | 用于测量光学成像系统的图像质量的系统 |
| JP2005353762A (ja) * | 2004-06-09 | 2005-12-22 | Matsushita Electric Ind Co Ltd | 半導体製造装置及びパターン形成方法 |
| KR101421915B1 (ko) * | 2004-06-09 | 2014-07-22 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| US7463330B2 (en) | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1780772B1 (en) * | 2004-07-12 | 2009-09-02 | Nikon Corporation | Exposure equipment and device manufacturing method |
| KR101230712B1 (ko) | 2004-08-03 | 2013-02-07 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| US8305553B2 (en) * | 2004-08-18 | 2012-11-06 | Nikon Corporation | Exposure apparatus and device manufacturing method |
| US7701550B2 (en) * | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20060044533A1 (en) * | 2004-08-27 | 2006-03-02 | Asmlholding N.V. | System and method for reducing disturbances caused by movement in an immersion lithography system |
| DE102004047677B4 (de) * | 2004-09-30 | 2007-06-21 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren und System für die Kontaminationserkennung und Überwachung in einer Lithographiebelichtungsanlage und Verfahren zum Betreiben der gleichen unter gesteuerten atomsphärischen Bedingungen |
| JP2006120674A (ja) * | 2004-10-19 | 2006-05-11 | Canon Inc | 露光装置及び方法、デバイス製造方法 |
| US7397533B2 (en) | 2004-12-07 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7880860B2 (en) | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| SG124351A1 (en) * | 2005-01-14 | 2006-08-30 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| DE602006012746D1 (de) | 2005-01-14 | 2010-04-22 | Asml Netherlands Bv | Lithografische Vorrichtung und Herstellungsverfahren |
| KR20180125636A (ko) | 2005-01-31 | 2018-11-23 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| US8692973B2 (en) * | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
| US7282701B2 (en) | 2005-02-28 | 2007-10-16 | Asml Netherlands B.V. | Sensor for use in a lithographic apparatus |
| JP4605219B2 (ja) * | 2005-03-30 | 2011-01-05 | 株式会社ニコン | 露光条件の決定方法、露光方法及び露光装置、並びにデバイス製造方法 |
| USRE43576E1 (en) | 2005-04-08 | 2012-08-14 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
| US20060232753A1 (en) * | 2005-04-19 | 2006-10-19 | Asml Holding N.V. | Liquid immersion lithography system with tilted liquid flow |
| US20070004182A1 (en) * | 2005-06-30 | 2007-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and system for inhibiting immersion lithography defect formation |
| US7357768B2 (en) * | 2005-09-22 | 2008-04-15 | William Marshall | Recliner exerciser |
| US7773195B2 (en) * | 2005-11-29 | 2010-08-10 | Asml Holding N.V. | System and method to increase surface tension and contact angle in immersion lithography |
| US8125610B2 (en) | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
| US20070124987A1 (en) * | 2005-12-05 | 2007-06-07 | Brown Jeffrey K | Electronic pest control apparatus |
| KR100768849B1 (ko) * | 2005-12-06 | 2007-10-22 | 엘지전자 주식회사 | 계통 연계형 연료전지 시스템의 전원공급장치 및 방법 |
| US7649611B2 (en) | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| DE102006021797A1 (de) | 2006-05-09 | 2007-11-15 | Carl Zeiss Smt Ag | Optische Abbildungseinrichtung mit thermischer Dämpfung |
| US20070296937A1 (en) * | 2006-06-26 | 2007-12-27 | International Business Machines Corporation | Illumination light in immersion lithography stepper for particle or bubble detection |
| US8654305B2 (en) * | 2007-02-15 | 2014-02-18 | Asml Holding N.V. | Systems and methods for insitu lens cleaning in immersion lithography |
| US8817226B2 (en) | 2007-02-15 | 2014-08-26 | Asml Holding N.V. | Systems and methods for insitu lens cleaning using ozone in immersion lithography |
| US20080198347A1 (en) * | 2007-02-16 | 2008-08-21 | Canon Kabushiki Kaisha | Immersion exposure apparatus and method of manufacturing device |
| US8237911B2 (en) | 2007-03-15 | 2012-08-07 | Nikon Corporation | Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine |
| TWI389551B (zh) * | 2007-08-09 | 2013-03-11 | 晨星半導體股份有限公司 | 迦瑪校正裝置 |
| NL1036009A1 (nl) * | 2007-10-05 | 2009-04-07 | Asml Netherlands Bv | An Immersion Lithography Apparatus. |
| KR101448152B1 (ko) * | 2008-03-26 | 2014-10-07 | 삼성전자주식회사 | 수직 포토게이트를 구비한 거리측정 센서 및 그를 구비한입체 컬러 이미지 센서 |
| US9176393B2 (en) | 2008-05-28 | 2015-11-03 | Asml Netherlands B.V. | Lithographic apparatus and a method of operating the apparatus |
| AU2010343143A1 (en) * | 2009-12-28 | 2012-06-28 | Pioneer Hi-Bred International, Inc. | Sorghum fertility restorer genotypes and methods of marker-assisted selection |
| EP2381310B1 (en) | 2010-04-22 | 2015-05-06 | ASML Netherlands BV | Fluid handling structure and lithographic apparatus |
| JP5457384B2 (ja) * | 2010-05-21 | 2014-04-02 | 東京エレクトロン株式会社 | 液処理装置及び液処理方法 |
| JP5797582B2 (ja) * | 2012-02-24 | 2015-10-21 | 株式会社アドテックエンジニアリング | 露光描画装置、プログラム及び露光描画方法 |
| CN103885301B (zh) * | 2014-03-21 | 2015-09-16 | 浙江大学 | 浸没式光刻机中浸液传送系统的控制时序的模型匹配方法 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
| JPS57153433A (en) * | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
| IL66127A (en) * | 1982-06-24 | 1987-11-30 | Israel State | Method and apparatus for measuring the index of refraction of fluids |
| US4670637A (en) * | 1985-02-11 | 1987-06-02 | The United States Of America As Represented By The Secretary Of The Army | Method and apparatus for transmitting a laser signal through fog |
| JPS62266447A (ja) * | 1986-05-14 | 1987-11-19 | Eisai Co Ltd | 容器内の液体中の異物検出方法および装置 |
| US5151752A (en) * | 1988-06-16 | 1992-09-29 | Asahi Kogaku Kogyo K.K. | Method of measuring refractive indices of lens and sample liquid |
| JP2899360B2 (ja) * | 1990-05-21 | 1999-06-02 | 興和株式会社 | 流体中の粒子計測方法及びその装置 |
| JPH06124873A (ja) * | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
| JP2753930B2 (ja) | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
| US5422714A (en) | 1993-06-07 | 1995-06-06 | Corning Incorporated | Device for comparing the refractive indices of an optical immersion liquid and a reference glass |
| GB9324926D0 (en) | 1993-12-04 | 1994-01-26 | Renishaw Plc | Combined interferometer and refractometer |
| KR100542414B1 (ko) * | 1996-03-27 | 2006-05-10 | 가부시키가이샤 니콘 | 노광장치및공조장치 |
| JP2982720B2 (ja) * | 1996-04-26 | 1999-11-29 | 日本電気株式会社 | パーティクルモニター装置およびこれを具備した無塵化プロセス装置 |
| US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
| US6133995A (en) * | 1997-05-09 | 2000-10-17 | Sysmex Corporation | Particle measuring apparatus |
| US5900354A (en) | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
| US6241827B1 (en) * | 1998-02-17 | 2001-06-05 | Tokyo Electron Limited | Method for cleaning a workpiece |
| JP3833810B2 (ja) * | 1998-03-04 | 2006-10-18 | 株式会社日立製作所 | 半導体の製造方法並びにプラズマ処理方法およびその装置 |
| DE10025789A1 (de) | 2000-05-19 | 2001-11-22 | Schmidt & Haensch Gmbh & Co Op | Refraktometer |
| WO2002091078A1 (en) | 2001-05-07 | 2002-11-14 | Massachusetts Institute Of Technology | Methods and apparatus employing an index matching medium |
| JP4352874B2 (ja) * | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| JP2005277363A (ja) * | 2003-05-23 | 2005-10-06 | Nikon Corp | 露光装置及びデバイス製造方法 |
| EP1489461A1 (en) | 2003-06-11 | 2004-12-22 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1486827B1 (en) * | 2003-06-11 | 2011-11-02 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2005006026A2 (en) | 2003-07-01 | 2005-01-20 | Nikon Corporation | Using isotopically specified fluids as optical elements |
| US7006209B2 (en) * | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
-
2003
- 2003-08-11 US US10/638,927 patent/US7061578B2/en not_active Expired - Lifetime
-
2004
- 2004-07-23 WO PCT/US2004/023875 patent/WO2005017625A2/en not_active Ceased
- 2004-07-23 EP EP04757262A patent/EP1654593B1/en not_active Expired - Lifetime
- 2004-07-23 JP JP2006523208A patent/JP2007502539A/ja active Pending
- 2004-07-23 CN CNA2004800208644A patent/CN1826559A/zh active Pending
- 2004-07-23 KR KR1020067002882A patent/KR101152366B1/ko not_active Expired - Fee Related
- 2004-07-23 DE DE602004027261T patent/DE602004027261D1/de not_active Expired - Lifetime
- 2004-07-23 TW TW093122003A patent/TWI359470B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007502539A (ja) | 2007-02-08 |
| EP1654593B1 (en) | 2010-05-19 |
| TW200511470A (en) | 2005-03-16 |
| WO2005017625A2 (en) | 2005-02-24 |
| US20050037269A1 (en) | 2005-02-17 |
| KR20060058713A (ko) | 2006-05-30 |
| EP1654593A2 (en) | 2006-05-10 |
| TWI359470B (en) | 2012-03-01 |
| DE602004027261D1 (de) | 2010-07-01 |
| WO2005017625A3 (en) | 2005-09-01 |
| US7061578B2 (en) | 2006-06-13 |
| CN1826559A (zh) | 2006-08-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101152366B1 (ko) | 액침 리소그래피 시스템에서의 이미징을 모니터링하고제어하기 위한 방법 및 장치 | |
| KR101071966B1 (ko) | 이머젼 리소그래피 시스템들에서 이미징의 모니터링 및제어 방법 | |
| US7014966B2 (en) | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems | |
| JP3626627B2 (ja) | リトグラフ投影装置およびディバイス製造方法 | |
| JP5243515B2 (ja) | リソグラフィ装置および表面洗浄方法 | |
| US8605250B2 (en) | Method and system for detecting particle contamination in an immersion lithography tool | |
| TWI392974B (zh) | 浸潤微影的方法及浸潤微影裝置 | |
| US20090284718A1 (en) | Liquid Immersion Optical Tool, Method for Cleaning Liquid Immersion Optical Tool, Liquid Immersion Exposure Method and Method for Manufacturing Semiconductor Device | |
| JP2004519868A (ja) | Euvに透明な境界構造 | |
| WO1999001797A1 (en) | Method for optical inspection and lithography | |
| TWI485395B (zh) | 時間差光罩檢測 | |
| JP2009267405A (ja) | 液浸リソグラフィに関する方法及び液浸リソグラフィ装置 | |
| JP4874399B2 (ja) | ガス分析システム、リソグラフィ装置、および、ガス分析システムの感度を向上させる方法 | |
| CN110520800A (zh) | 对流体处理结构进行性能测试的方法 | |
| JP5221912B2 (ja) | リソグラフ要素の汚染測定方法およびシステム | |
| JP4471981B2 (ja) | リソグラフィ装置及びリソグラフィ装置の検査方法 | |
| EP4534493A1 (en) | Method for producing a temperature-controlling hollow structure in a substrate using a processing light beam | |
| JP5503938B2 (ja) | 液浸リソグラフィ装置 | |
| JP4922358B2 (ja) | デバイス製造方法 | |
| KR20060002177A (ko) | 반도체 제조 설비의 파티클 측정장치 및 그 측정방법 | |
| US12025922B2 (en) | Methods and apparatus for reducing hydrogen permeation from lithographic tool | |
| JP2005142485A (ja) | 光透過状態識別装置、露光装置、光透過状態識別方法及び露光方法 | |
| JP2007027479A (ja) | 露光装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| A201 | Request for examination | ||
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| N231 | Notification of change of applicant | ||
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| E90F | Notification of reason for final refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U12-oth-PR1002 Fee payment year number: 1 |
|
| PG1601 | Publication of registration |
St.27 status event code: A-4-4-Q10-Q13-nap-PG1601 |
|
| FPAY | Annual fee payment |
Payment date: 20150430 Year of fee payment: 4 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4 |
|
| FPAY | Annual fee payment |
Payment date: 20160427 Year of fee payment: 5 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5 |
|
| LAPS | Lapse due to unpaid annual fee | ||
| PC1903 | Unpaid annual fee |
St.27 status event code: A-4-4-U10-U13-oth-PC1903 Not in force date: 20170526 Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE |
|
| PC1903 | Unpaid annual fee |
St.27 status event code: N-4-6-H10-H13-oth-PC1903 Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 20170526 |