KR101142965B1 - 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 - Google Patents

웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 Download PDF

Info

Publication number
KR101142965B1
KR101142965B1 KR1020100092807A KR20100092807A KR101142965B1 KR 101142965 B1 KR101142965 B1 KR 101142965B1 KR 1020100092807 A KR1020100092807 A KR 1020100092807A KR 20100092807 A KR20100092807 A KR 20100092807A KR 101142965 B1 KR101142965 B1 KR 101142965B1
Authority
KR
South Korea
Prior art keywords
layer
insulating layer
bump
contact
light emitting
Prior art date
Application number
KR1020100092807A
Other languages
English (en)
Korean (ko)
Other versions
KR20120031342A (ko
Inventor
서원철
갈대성
Original Assignee
서울반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울반도체 주식회사 filed Critical 서울반도체 주식회사
Priority to KR1020100092807A priority Critical patent/KR101142965B1/ko
Priority to US13/194,317 priority patent/US9070851B2/en
Priority to PCT/KR2011/006544 priority patent/WO2012039555A2/en
Priority to DE112011103186T priority patent/DE112011103186T5/de
Priority to CN201610133009.9A priority patent/CN105679751B/zh
Priority to CN201610131393.9A priority patent/CN105575990B/zh
Priority to CN201180046150.0A priority patent/CN103119735B/zh
Priority to DE202011110832.9U priority patent/DE202011110832U1/de
Priority to DE112011106156.0T priority patent/DE112011106156B4/de
Priority to CN201610132992.2A priority patent/CN105789236B/zh
Priority to CN201610132965.5A priority patent/CN105789235B/zh
Priority to CN201610131814.8A priority patent/CN105789234B/zh
Publication of KR20120031342A publication Critical patent/KR20120031342A/ko
Application granted granted Critical
Publication of KR101142965B1 publication Critical patent/KR101142965B1/ko
Priority to US14/462,029 priority patent/US9048409B2/en
Priority to US14/708,029 priority patent/US9219196B2/en
Priority to US14/721,433 priority patent/US9153750B2/en
Priority to US14/815,433 priority patent/US9293664B2/en
Priority to US15/041,907 priority patent/US9543490B2/en
Priority to US15/247,516 priority patent/US9882102B2/en
Priority to US15/389,413 priority patent/US10069048B2/en
Priority to US16/101,287 priority patent/US10879437B2/en
Priority to US16/138,370 priority patent/US10892386B2/en
Priority to US17/103,905 priority patent/US20210083155A1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
KR1020100092807A 2010-09-24 2010-09-24 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 KR101142965B1 (ko)

Priority Applications (22)

Application Number Priority Date Filing Date Title
KR1020100092807A KR101142965B1 (ko) 2010-09-24 2010-09-24 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
US13/194,317 US9070851B2 (en) 2010-09-24 2011-07-29 Wafer-level light emitting diode package and method of fabricating the same
CN201610131814.8A CN105789234B (zh) 2010-09-24 2011-09-05 晶片级发光二极管封装件及其制造方法
DE112011103186T DE112011103186T5 (de) 2010-09-24 2011-09-05 Lichtemittierende Diodeneinheit auf Waferebene und Verfahren zu ihrer Herstellung
CN201610133009.9A CN105679751B (zh) 2010-09-24 2011-09-05 晶片级发光二极管封装件及其制造方法
CN201610131393.9A CN105575990B (zh) 2010-09-24 2011-09-05 晶片级发光二极管封装件及其制造方法
CN201180046150.0A CN103119735B (zh) 2010-09-24 2011-09-05 晶片级发光二极管封装件及其制造方法
DE202011110832.9U DE202011110832U1 (de) 2010-09-24 2011-09-05 Lichtemittierende Diodeneinheit auf Waferebene
DE112011106156.0T DE112011106156B4 (de) 2010-09-24 2011-09-05 Lichtemittierende Diodeneinheit auf Waferebene
CN201610132992.2A CN105789236B (zh) 2010-09-24 2011-09-05 晶片级发光二极管封装件及其制造方法
PCT/KR2011/006544 WO2012039555A2 (en) 2010-09-24 2011-09-05 Wafer-level light emitting diode package and method of fabricating the same
CN201610132965.5A CN105789235B (zh) 2010-09-24 2011-09-05 晶片级发光二极管封装件及其制造方法
US14/462,029 US9048409B2 (en) 2010-09-24 2014-08-18 Wafer-level light emitting diode package and method of fabricating the same
US14/708,029 US9219196B2 (en) 2010-09-24 2015-05-08 Wafer-level light emitting diode package and method of fabricating the same
US14/721,433 US9153750B2 (en) 2010-09-24 2015-05-26 Wafer-level light emitting diode package and method of fabricating the same
US14/815,433 US9293664B2 (en) 2010-09-24 2015-07-31 Wafer-level light emitting diode package and method of fabricating the same
US15/041,907 US9543490B2 (en) 2010-09-24 2016-02-11 Wafer-level light emitting diode package and method of fabricating the same
US15/247,516 US9882102B2 (en) 2010-09-24 2016-08-25 Wafer-level light emitting diode and wafer-level light emitting diode package
US15/389,413 US10069048B2 (en) 2010-09-24 2016-12-22 Wafer-level light emitting diode package and method of fabricating the same
US16/101,287 US10879437B2 (en) 2010-09-24 2018-08-10 Wafer-level light emitting diode package and method of fabricating the same
US16/138,370 US10892386B2 (en) 2010-09-24 2018-09-21 Wafer-level light emitting diode package and method of fabricating the same
US17/103,905 US20210083155A1 (en) 2010-09-24 2020-11-24 Wafer-level light emitting diode package and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100092807A KR101142965B1 (ko) 2010-09-24 2010-09-24 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020110111136A Division KR101654339B1 (ko) 2011-10-28 2011-10-28 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법

Publications (2)

Publication Number Publication Date
KR20120031342A KR20120031342A (ko) 2012-04-03
KR101142965B1 true KR101142965B1 (ko) 2012-05-08

Family

ID=45874235

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100092807A KR101142965B1 (ko) 2010-09-24 2010-09-24 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법

Country Status (4)

Country Link
KR (1) KR101142965B1 (de)
CN (6) CN105575990B (de)
DE (3) DE202011110832U1 (de)
WO (1) WO2012039555A2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160118487A (ko) * 2015-04-02 2016-10-12 엘지이노텍 주식회사 발광소자

Families Citing this family (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130258637A1 (en) * 2012-03-31 2013-10-03 Michael Dongxue Wang Wavelength-converting structure for a light source
CN103700682A (zh) * 2012-05-04 2014-04-02 奇力光电科技股份有限公司 发光二极管结构及其制造方法
US8664681B2 (en) 2012-07-06 2014-03-04 Invensas Corporation Parallel plate slot emission array
US8816383B2 (en) 2012-07-06 2014-08-26 Invensas Corporation High performance light emitting diode with vias
WO2014025195A1 (ko) * 2012-08-07 2014-02-13 서울바이오시스 주식회사 웨이퍼 레벨의 발광 다이오드 어레이 및 그의 제조방법
US8765500B2 (en) * 2012-08-24 2014-07-01 Tsmc Solid State Lighting Ltd. Method and apparatus for fabricating phosphor-coated LED dies
JP5514274B2 (ja) * 2012-09-03 2014-06-04 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
WO2014105403A1 (en) * 2012-12-31 2014-07-03 Invensas Corporation High performance light emitting diode
TWI570955B (zh) 2013-01-10 2017-02-11 晶元光電股份有限公司 發光元件
US9577172B2 (en) * 2013-02-19 2017-02-21 Koninklijke Philips N.V. Light emitting die component formed by multilayer structures
DE102013102667A1 (de) * 2013-03-15 2014-10-02 Osram Opto Semiconductors Gmbh Anzeigevorrichtung
CN105122478B (zh) * 2013-04-23 2018-01-23 皇家飞利浦有限公司 用于发光器件的侧面互连
KR102075147B1 (ko) * 2013-06-05 2020-02-10 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
KR102075655B1 (ko) * 2013-06-24 2020-02-10 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
US9761774B2 (en) 2014-12-16 2017-09-12 Epistar Corporation Light-emitting element with protective cushioning
TWI616004B (zh) * 2013-11-27 2018-02-21 晶元光電股份有限公司 半導體發光元件
KR102114932B1 (ko) * 2013-11-12 2020-05-25 엘지이노텍 주식회사 발광 소자 및 이를 포함하는 발광 소자 패키지
KR102116986B1 (ko) * 2014-02-17 2020-05-29 삼성전자 주식회사 발광 다이오드 패키지
CN104953000B (zh) * 2014-03-27 2019-02-15 首尔伟傲世有限公司 发光二极管及发光装置
KR102162437B1 (ko) * 2014-05-15 2020-10-07 엘지이노텍 주식회사 발광 소자 및 이를 포함하는 발광 소자 패키지
CN106663734B (zh) * 2014-06-10 2019-06-14 世迈克琉明有限公司 半导体发光元件
KR102019914B1 (ko) * 2014-06-11 2019-11-04 엘지이노텍 주식회사 발광 소자
KR102197082B1 (ko) * 2014-06-16 2020-12-31 엘지이노텍 주식회사 발광 소자 및 이를 포함하는 발광소자 패키지
KR102407827B1 (ko) * 2015-01-27 2022-06-13 서울바이오시스 주식회사 발광 소자
US9543488B2 (en) 2014-06-23 2017-01-10 Seoul Viosys Co., Ltd. Light emitting device
KR20160016361A (ko) * 2014-08-05 2016-02-15 서울바이오시스 주식회사 발광 다이오드 및 그 제조 방법
US10074777B2 (en) * 2014-08-27 2018-09-11 Epistar Corporation Light emitting diode structure with dielectric reflective layer
KR101719628B1 (ko) * 2014-10-27 2017-03-24 엘지이노텍 주식회사 발광 소자 패키지
KR102263066B1 (ko) * 2014-11-12 2021-06-10 서울바이오시스 주식회사 발광 소자
WO2016080768A1 (ko) * 2014-11-18 2016-05-26 서울반도체 주식회사 발광 장치 및 이를 포함하는 차량용 램프
KR102309670B1 (ko) * 2014-12-24 2021-10-07 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자, 발광소자 패키지 및 조명시스템
CN105810672A (zh) * 2014-12-30 2016-07-27 晶能光电（江西）有限公司 一种倒装led芯片及其制备方法
KR102402260B1 (ko) 2015-01-08 2022-05-27 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 패키지
DE102015100578A1 (de) * 2015-01-15 2016-07-21 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
CN104681704B (zh) * 2015-01-30 2017-08-29 大连德豪光电科技有限公司 倒装led芯片及其制备方法
KR101669122B1 (ko) * 2015-02-26 2016-10-25 엘지이노텍 주식회사 발광 소자 패키지
JP2016174015A (ja) * 2015-03-16 2016-09-29 株式会社東芝 半導体発光素子
CN107258022B (zh) 2015-03-16 2019-09-24 首尔伟傲世有限公司 包括金属块的发光元件
KR102434778B1 (ko) * 2015-03-26 2022-08-23 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 패키지
KR102458090B1 (ko) * 2015-04-03 2022-10-24 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자
CN104795474B (zh) * 2015-04-20 2018-10-16 映瑞光电科技(上海)有限公司 大功率led芯片及其制造方法
KR102348511B1 (ko) * 2015-05-11 2022-01-07 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자
KR102380825B1 (ko) 2015-05-29 2022-04-01 삼성전자주식회사 반도체 발광다이오드 칩 및 이를 구비한 발광장치
JP2017005191A (ja) 2015-06-15 2017-01-05 株式会社東芝 半導体発光装置
DE212016000126U1 (de) 2015-06-26 2018-01-29 Seoul Semiconductor Co., Ltd Hintergrundbeleuchtungseinheit unter Verwendung von Mehrzellen-Leuchtdioden
WO2016209025A2 (ko) * 2015-06-26 2016-12-29 서울반도체 주식회사 멀티셀 발광 다이오드를 이용한 백라이트 유닛
KR102422246B1 (ko) * 2015-07-30 2022-07-19 삼성전자주식회사 발광 소자 패키지
DE102015114590B4 (de) 2015-09-01 2020-01-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauteils
KR102487989B1 (ko) 2015-09-30 2023-01-12 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자
CN106558597B (zh) 2015-09-30 2020-03-06 三星电子株式会社 发光器件封装件
KR102413224B1 (ko) 2015-10-01 2022-06-24 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자, 발광 소자 제조방법 및 발광 모듈
CN105390583A (zh) * 2015-10-28 2016-03-09 江苏新广联半导体有限公司 白光倒装芯片及其制备方法
CN111987210A (zh) * 2015-11-18 2020-11-24 晶元光电股份有限公司 发光元件
KR102509144B1 (ko) * 2015-12-28 2023-03-13 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자
CN113948623A (zh) * 2016-01-13 2022-01-18 首尔伟傲世有限公司 发光元件
KR102624111B1 (ko) 2016-01-13 2024-01-12 서울바이오시스 주식회사 자외선 발광소자
CN109075184B (zh) * 2016-05-03 2023-07-21 首尔伟傲世有限公司 发光二极管
KR102559136B1 (ko) * 2016-06-08 2023-07-25 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자 및 이를 포함하는 조명장치
CN107689408B (zh) * 2016-08-04 2020-03-17 展晶科技(深圳)有限公司 发光二极管覆晶晶粒及显示器
KR102553630B1 (ko) * 2016-08-11 2023-07-10 삼성전자주식회사 발광소자 패키지 및 이를 이용한 디스플레이 장치
CN107146833B (zh) * 2017-04-25 2020-05-29 淮安澳洋顺昌光电技术有限公司 Led倒装芯片的制备方法
CN107123707A (zh) * 2017-04-25 2017-09-01 淮安澳洋顺昌光电技术有限公司 简易倒装高压led芯片的制备方法
CN108877538B (zh) * 2017-05-16 2021-08-24 英属开曼群岛商錼创科技股份有限公司 微型发光二极管装置及显示面板
TWI790249B (zh) * 2017-07-13 2023-01-21 大陸商蘇州樂琻半導體有限公司 發光裝置及發光裝置封裝
US11749778B2 (en) 2017-08-25 2023-09-05 Suzhou Lekin Semiconductor Co., Ltd. Semiconductor device and semiconductor device package having an electrode recess with a different inclination angle than an inclination angle of an electrode in the recess
CN107658372A (zh) * 2017-09-21 2018-02-02 山西飞虹微纳米光电科技有限公司 深刻蚀切割道倒装led芯片及制备方法、led显示装置
KR101930006B1 (ko) * 2017-09-26 2018-12-17 에피스타 코포레이션 발광소자
US20190164945A1 (en) * 2017-11-27 2019-05-30 Seoul Viosys Co., Ltd. Light emitting diode for display and display apparatus having the same
US10643980B2 (en) * 2018-01-23 2020-05-05 Epistar Corporation Light-emitting device, manufacturing method thereof and display module using the same
CN108288666A (zh) * 2018-01-26 2018-07-17 扬州乾照光电有限公司 一种自带散热结构的发光二极管及电子设备
US10269711B1 (en) * 2018-03-16 2019-04-23 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and method for manufacturing the same
CN109031779B (zh) * 2018-07-25 2024-06-11 京东方科技集团股份有限公司 发光二极管基板、背光模组和显示装置
CN109326686A (zh) * 2018-09-12 2019-02-12 聚灿光电科技（宿迁）有限公司 一种倒装发光二极管芯片的制作方法
CN109638124A (zh) * 2018-12-11 2019-04-16 合肥彩虹蓝光科技有限公司 倒装式发光二极管芯片及其制备方法
KR20200088961A (ko) * 2019-01-15 2020-07-24 삼성디스플레이 주식회사 발광 장치, 이를 포함하는 표시 장치
EP3970205A4 (de) * 2019-05-14 2023-05-31 Seoul Viosys Co., Ltd Lichtemittierendes gehäuse
EP3975270A4 (de) * 2019-05-21 2023-06-07 Seoul Viosys Co., Ltd Lichtemittierendes element für eine anzeige und anzeigevorrichtung damit
KR102170219B1 (ko) * 2019-09-03 2020-10-26 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
CN110931619A (zh) * 2019-11-20 2020-03-27 厦门士兰明镓化合物半导体有限公司 倒装led芯片及其制造方法
CN110911537B (zh) * 2019-11-29 2021-12-28 东莞市中晶半导体科技有限公司 共阴极led芯片及其制作方法
CN111416027B (zh) * 2020-04-27 2022-08-12 厦门三安光电有限公司 一种倒装高压发光二极管及发光装置
CN114497104A (zh) * 2020-11-12 2022-05-13 京东方科技集团股份有限公司 显示模组及显示装置
CN112670391A (zh) * 2020-12-31 2021-04-16 深圳第三代半导体研究院 一种发光二极管及其制造方法
CN113921673B (zh) * 2021-08-26 2023-10-20 深圳市隆利科技股份有限公司 用于显示的发光二极管
CN116230828A (zh) * 2021-09-27 2023-06-06 厦门三安光电有限公司 发光二极管及发光装置
KR20230048948A (ko) * 2021-10-05 2023-04-12 삼성전자주식회사 반도체 발광 소자, 이를 포함하는 디스플레이 장치, 및 반도체 발광 소자를 제조하는 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100838197B1 (ko) * 2007-08-10 2008-06-16 서울옵토디바이스주식회사 개선된 전류분산 성능을 갖는 발광 다이오드
KR20100079843A (ko) * 2008-12-31 2010-07-08 서울옵토디바이스주식회사 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6463088B1 (en) * 2000-07-07 2002-10-08 Lucent Technologies Inc. Mesa geometry semiconductor light emitter having chalcogenide dielectric coating
US6630689B2 (en) * 2001-05-09 2003-10-07 Lumileds Lighting, U.S. Llc Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa
DE60336252D1 (de) 2002-08-29 2011-04-14 Seoul Semiconductor Co Ltd Lichtemittierendes bauelement mit lichtemittierenden dioden
JP4143732B2 (ja) * 2002-10-16 2008-09-03 スタンレー電気株式会社 車載用波長変換素子
US7179670B2 (en) * 2004-03-05 2007-02-20 Gelcore, Llc Flip-chip light emitting diode device without sub-mount
JP2005347622A (ja) * 2004-06-04 2005-12-15 Seiko Epson Corp 半導体装置、回路基板及び電子機器
US9368428B2 (en) * 2004-06-30 2016-06-14 Cree, Inc. Dielectric wafer level bonding with conductive feed-throughs for electrical connection and thermal management
CN100365834C (zh) * 2004-08-02 2008-01-30 晶元光电股份有限公司 具有热通道黏结层的发光二极管及发光二极管阵列
JP3904571B2 (ja) * 2004-09-02 2007-04-11 ローム株式会社 半導体発光装置
US7821023B2 (en) * 2005-01-10 2010-10-26 Cree, Inc. Solid state lighting component
US7736945B2 (en) 2005-06-09 2010-06-15 Philips Lumileds Lighting Company, Llc LED assembly having maximum metal support for laser lift-off of growth substrate
KR100896576B1 (ko) * 2006-02-24 2009-05-07 삼성전기주식회사 질화물계 반도체 발광소자 및 그 제조방법
US7777240B2 (en) * 2006-10-17 2010-08-17 Epistar Corporation Optoelectronic device
KR100818466B1 (ko) * 2007-02-13 2008-04-02 삼성전기주식회사 반도체 발광소자
DE102007019776A1 (de) * 2007-04-26 2008-10-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente
KR101423723B1 (ko) * 2007-10-29 2014-08-04 서울바이오시스 주식회사 발광 다이오드 패키지
US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
US8643034B2 (en) * 2008-02-29 2014-02-04 Osram Opto Semiconductors Gmbh Monolithic, optoelectronic semiconductor body and method for the production thereof
CN101685842B (zh) * 2008-09-25 2012-12-05 晶元光电股份有限公司 光电半导体装置
KR101017394B1 (ko) * 2008-09-30 2011-02-28 서울옵토디바이스주식회사 발광 소자 및 그것을 제조하는 방법
TWI464900B (zh) * 2008-11-26 2014-12-11 Epistar Corp 光電半導體裝置
JP4724222B2 (ja) * 2008-12-12 2011-07-13 株式会社東芝 発光装置の製造方法
KR20100076083A (ko) * 2008-12-17 2010-07-06 서울반도체 주식회사 복수개의 발광셀들을 갖는 발광 다이오드 및 그것을 제조하는 방법
CN101764183A (zh) * 2008-12-23 2010-06-30 启耀光电股份有限公司 发光装置
TWI473246B (zh) * 2008-12-30 2015-02-11 Epistar Corp 發光二極體晶粒等級封裝
CN101937962A (zh) * 2010-07-30 2011-01-05 晶科电子（广州）有限公司 一种led封装结构及其封装方法
JP2012054423A (ja) * 2010-09-01 2012-03-15 Hitachi Cable Ltd 発光ダイオード

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100838197B1 (ko) * 2007-08-10 2008-06-16 서울옵토디바이스주식회사 개선된 전류분산 성능을 갖는 발광 다이오드
KR20100079843A (ko) * 2008-12-31 2010-07-08 서울옵토디바이스주식회사 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160118487A (ko) * 2015-04-02 2016-10-12 엘지이노텍 주식회사 발광소자
KR102474695B1 (ko) 2015-04-02 2022-12-06 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자

Also Published As

Publication number Publication date
KR20120031342A (ko) 2012-04-03
CN105789234A (zh) 2016-07-20
DE202011110832U1 (de) 2016-09-22
CN105789236B (zh) 2019-06-11
CN105789234B (zh) 2020-06-09
CN103119735A (zh) 2013-05-22
CN105679751B (zh) 2020-06-09
CN105789236A (zh) 2016-07-20
DE112011106156B4 (de) 2024-02-01
CN103119735B (zh) 2016-04-06
WO2012039555A3 (en) 2012-06-28
CN105679751A (zh) 2016-06-15
DE112011103186T5 (de) 2013-07-18
CN105575990A (zh) 2016-05-11
CN105789235B (zh) 2019-05-03
WO2012039555A2 (en) 2012-03-29
CN105789235A (zh) 2016-07-20
CN105575990B (zh) 2018-12-07

Similar Documents

Publication Publication Date Title
KR101142965B1 (ko) 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
US20210083155A1 (en) Wafer-level light emitting diode package and method of fabricating the same
US10580929B2 (en) UV light emitting diode package and light emitting diode module having the same
KR101138952B1 (ko) 복수개의 발광셀들을 갖는 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
KR101423717B1 (ko) 복수개의 발광셀들을 갖는 발광 다이오드 패키지 및 그것을 제조하는 방법
EP2590235B1 (de) Lichtemittierende Vorrichtung
KR101634369B1 (ko) 복수개의 발광셀들을 갖는 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
KR101660020B1 (ko) 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
KR102588170B1 (ko) 다층 구조의 반사막을 구비한 반도체 발광 소자
KR20160149827A (ko) 복수의 파장변환부를 포함하는 발광 소자 및 그 제조 방법
KR20160036862A (ko) 발광 소자 제조 방법 및 그것에 의해 제조된 발광 소자
KR101654339B1 (ko) 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
KR101873505B1 (ko) 웨이퍼 레벨 발광 다이오드 패키지
KR20160071854A (ko) 발광 소자
KR101797561B1 (ko) 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
KR101731058B1 (ko) 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
KR101775664B1 (ko) 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법

Legal Events

Date Code Title Description
A201 Request for examination
A107 Divisional application of patent
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20150303

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20160304

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20170308

Year of fee payment: 6

FPAY Annual fee payment

Payment date: 20190325

Year of fee payment: 8