KR101142965B1 - 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 - Google Patents
웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 Download PDFInfo
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- KR101142965B1 KR101142965B1 KR1020100092807A KR20100092807A KR101142965B1 KR 101142965 B1 KR101142965 B1 KR 101142965B1 KR 1020100092807 A KR1020100092807 A KR 1020100092807A KR 20100092807 A KR20100092807 A KR 20100092807A KR 101142965 B1 KR101142965 B1 KR 101142965B1
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- insulating layer
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- light emitting
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 134
- 230000001681 protective effect Effects 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 39
- 238000002955 isolation Methods 0.000 claims description 12
- 238000000059 patterning Methods 0.000 claims description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 273
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000002356 single layer Substances 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 238000012858 packaging process Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0756—Stacked arrangements of devices
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Priority Applications (22)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100092807A KR101142965B1 (ko) | 2010-09-24 | 2010-09-24 | 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 |
US13/194,317 US9070851B2 (en) | 2010-09-24 | 2011-07-29 | Wafer-level light emitting diode package and method of fabricating the same |
CN201610131814.8A CN105789234B (zh) | 2010-09-24 | 2011-09-05 | 晶片级发光二极管封装件及其制造方法 |
DE112011103186T DE112011103186T5 (de) | 2010-09-24 | 2011-09-05 | Lichtemittierende Diodeneinheit auf Waferebene und Verfahren zu ihrer Herstellung |
CN201610133009.9A CN105679751B (zh) | 2010-09-24 | 2011-09-05 | 晶片级发光二极管封装件及其制造方法 |
CN201610131393.9A CN105575990B (zh) | 2010-09-24 | 2011-09-05 | 晶片级发光二极管封装件及其制造方法 |
CN201180046150.0A CN103119735B (zh) | 2010-09-24 | 2011-09-05 | 晶片级发光二极管封装件及其制造方法 |
DE202011110832.9U DE202011110832U1 (de) | 2010-09-24 | 2011-09-05 | Lichtemittierende Diodeneinheit auf Waferebene |
DE112011106156.0T DE112011106156B4 (de) | 2010-09-24 | 2011-09-05 | Lichtemittierende Diodeneinheit auf Waferebene |
CN201610132992.2A CN105789236B (zh) | 2010-09-24 | 2011-09-05 | 晶片级发光二极管封装件及其制造方法 |
PCT/KR2011/006544 WO2012039555A2 (en) | 2010-09-24 | 2011-09-05 | Wafer-level light emitting diode package and method of fabricating the same |
CN201610132965.5A CN105789235B (zh) | 2010-09-24 | 2011-09-05 | 晶片级发光二极管封装件及其制造方法 |
US14/462,029 US9048409B2 (en) | 2010-09-24 | 2014-08-18 | Wafer-level light emitting diode package and method of fabricating the same |
US14/708,029 US9219196B2 (en) | 2010-09-24 | 2015-05-08 | Wafer-level light emitting diode package and method of fabricating the same |
US14/721,433 US9153750B2 (en) | 2010-09-24 | 2015-05-26 | Wafer-level light emitting diode package and method of fabricating the same |
US14/815,433 US9293664B2 (en) | 2010-09-24 | 2015-07-31 | Wafer-level light emitting diode package and method of fabricating the same |
US15/041,907 US9543490B2 (en) | 2010-09-24 | 2016-02-11 | Wafer-level light emitting diode package and method of fabricating the same |
US15/247,516 US9882102B2 (en) | 2010-09-24 | 2016-08-25 | Wafer-level light emitting diode and wafer-level light emitting diode package |
US15/389,413 US10069048B2 (en) | 2010-09-24 | 2016-12-22 | Wafer-level light emitting diode package and method of fabricating the same |
US16/101,287 US10879437B2 (en) | 2010-09-24 | 2018-08-10 | Wafer-level light emitting diode package and method of fabricating the same |
US16/138,370 US10892386B2 (en) | 2010-09-24 | 2018-09-21 | Wafer-level light emitting diode package and method of fabricating the same |
US17/103,905 US20210083155A1 (en) | 2010-09-24 | 2020-11-24 | Wafer-level light emitting diode package and method of fabricating the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100092807A KR101142965B1 (ko) | 2010-09-24 | 2010-09-24 | 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020110111136A Division KR101654339B1 (ko) | 2011-10-28 | 2011-10-28 | 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20120031342A KR20120031342A (ko) | 2012-04-03 |
KR101142965B1 true KR101142965B1 (ko) | 2012-05-08 |
Family
ID=45874235
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020100092807A KR101142965B1 (ko) | 2010-09-24 | 2010-09-24 | 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 |
Country Status (4)
Country | Link |
---|---|
KR (1) | KR101142965B1 (de) |
CN (6) | CN105575990B (de) |
DE (3) | DE202011110832U1 (de) |
WO (1) | WO2012039555A2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160118487A (ko) * | 2015-04-02 | 2016-10-12 | 엘지이노텍 주식회사 | 발광소자 |
Families Citing this family (86)
Publication number | Priority date | Publication date | Assignee | Title |
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US20130258637A1 (en) * | 2012-03-31 | 2013-10-03 | Michael Dongxue Wang | Wavelength-converting structure for a light source |
CN103700682A (zh) * | 2012-05-04 | 2014-04-02 | 奇力光电科技股份有限公司 | 发光二极管结构及其制造方法 |
US8664681B2 (en) | 2012-07-06 | 2014-03-04 | Invensas Corporation | Parallel plate slot emission array |
US8816383B2 (en) | 2012-07-06 | 2014-08-26 | Invensas Corporation | High performance light emitting diode with vias |
WO2014025195A1 (ko) * | 2012-08-07 | 2014-02-13 | 서울바이오시스 주식회사 | 웨이퍼 레벨의 발광 다이오드 어레이 및 그의 제조방법 |
US8765500B2 (en) * | 2012-08-24 | 2014-07-01 | Tsmc Solid State Lighting Ltd. | Method and apparatus for fabricating phosphor-coated LED dies |
JP5514274B2 (ja) * | 2012-09-03 | 2014-06-04 | Dowaエレクトロニクス株式会社 | Iii族窒化物半導体発光素子およびその製造方法 |
WO2014105403A1 (en) * | 2012-12-31 | 2014-07-03 | Invensas Corporation | High performance light emitting diode |
TWI570955B (zh) | 2013-01-10 | 2017-02-11 | 晶元光電股份有限公司 | 發光元件 |
US9577172B2 (en) * | 2013-02-19 | 2017-02-21 | Koninklijke Philips N.V. | Light emitting die component formed by multilayer structures |
DE102013102667A1 (de) * | 2013-03-15 | 2014-10-02 | Osram Opto Semiconductors Gmbh | Anzeigevorrichtung |
CN105122478B (zh) * | 2013-04-23 | 2018-01-23 | 皇家飞利浦有限公司 | 用于发光器件的侧面互连 |
KR102075147B1 (ko) * | 2013-06-05 | 2020-02-10 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
KR102075655B1 (ko) * | 2013-06-24 | 2020-02-10 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
US9761774B2 (en) | 2014-12-16 | 2017-09-12 | Epistar Corporation | Light-emitting element with protective cushioning |
TWI616004B (zh) * | 2013-11-27 | 2018-02-21 | 晶元光電股份有限公司 | 半導體發光元件 |
KR102114932B1 (ko) * | 2013-11-12 | 2020-05-25 | 엘지이노텍 주식회사 | 발광 소자 및 이를 포함하는 발광 소자 패키지 |
KR102116986B1 (ko) * | 2014-02-17 | 2020-05-29 | 삼성전자 주식회사 | 발광 다이오드 패키지 |
CN104953000B (zh) * | 2014-03-27 | 2019-02-15 | 首尔伟傲世有限公司 | 发光二极管及发光装置 |
KR102162437B1 (ko) * | 2014-05-15 | 2020-10-07 | 엘지이노텍 주식회사 | 발광 소자 및 이를 포함하는 발광 소자 패키지 |
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Also Published As
Publication number | Publication date |
---|---|
KR20120031342A (ko) | 2012-04-03 |
CN105789234A (zh) | 2016-07-20 |
DE202011110832U1 (de) | 2016-09-22 |
CN105789236B (zh) | 2019-06-11 |
CN105789234B (zh) | 2020-06-09 |
CN103119735A (zh) | 2013-05-22 |
CN105679751B (zh) | 2020-06-09 |
CN105789236A (zh) | 2016-07-20 |
DE112011106156B4 (de) | 2024-02-01 |
CN103119735B (zh) | 2016-04-06 |
WO2012039555A3 (en) | 2012-06-28 |
CN105679751A (zh) | 2016-06-15 |
DE112011103186T5 (de) | 2013-07-18 |
CN105575990A (zh) | 2016-05-11 |
CN105789235B (zh) | 2019-05-03 |
WO2012039555A2 (en) | 2012-03-29 |
CN105789235A (zh) | 2016-07-20 |
CN105575990B (zh) | 2018-12-07 |
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