KR101114555B1 - 반도체 집적회로 - Google Patents

반도체 집적회로 Download PDF

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Publication number
KR101114555B1
KR101114555B1 KR1020050019736A KR20050019736A KR101114555B1 KR 101114555 B1 KR101114555 B1 KR 101114555B1 KR 1020050019736 A KR1020050019736 A KR 1020050019736A KR 20050019736 A KR20050019736 A KR 20050019736A KR 101114555 B1 KR101114555 B1 KR 101114555B1
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KR
South Korea
Prior art keywords
power
wiring
line
circuit
branch line
Prior art date
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Expired - Fee Related
Application number
KR1020050019736A
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English (en)
Korean (ko)
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KR20060043789A (ko
Inventor
히로미 오가타
Original Assignee
소니 주식회사
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Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34824577&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR101114555(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 소니 주식회사 filed Critical 소니 주식회사
Publication of KR20060043789A publication Critical patent/KR20060043789A/ko
Application granted granted Critical
Publication of KR101114555B1 publication Critical patent/KR101114555B1/ko
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B63—SHIPS OR OTHER WATERBORNE VESSELS; RELATED EQUIPMENT
    • B63J—AUXILIARIES ON VESSELS
    • B63J2/00—Arrangements of ventilation, heating, cooling, or air-conditioning
    • B63J2/12—Heating; Cooling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D35/00—Filtering devices having features not specifically covered by groups B01D24/00 - B01D33/00, or for applications not specifically covered by groups B01D24/00 - B01D33/00; Auxiliary devices for filtration; Filter housing constructions
    • B01D35/02—Filters adapted for location in special places, e.g. pipe-lines, pumps, stop-cocks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/40—Mixing liquids with liquids; Emulsifying
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F27/00—Mixers with rotary stirring devices in fixed receptacles; Kneaders
    • B01F27/80—Mixers with rotary stirring devices in fixed receptacles; Kneaders with stirrers rotating about a substantially vertical axis
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/02—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/427—Power or ground buses

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Combustion & Propulsion (AREA)
  • Mechanical Engineering (AREA)
  • Ocean & Marine Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
KR1020050019736A 2004-03-10 2005-03-09 반도체 집적회로 Expired - Fee Related KR101114555B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004067489A JP4200926B2 (ja) 2004-03-10 2004-03-10 半導体集積回路
JPJP-P-2004-00067489 2004-03-10

Publications (2)

Publication Number Publication Date
KR20060043789A KR20060043789A (ko) 2006-05-15
KR101114555B1 true KR101114555B1 (ko) 2012-02-27

Family

ID=34824577

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050019736A Expired - Fee Related KR101114555B1 (ko) 2004-03-10 2005-03-09 반도체 집적회로

Country Status (6)

Country Link
US (7) US7274210B2 (https=)
EP (5) EP2835826B1 (https=)
JP (1) JP4200926B2 (https=)
KR (1) KR101114555B1 (https=)
CN (2) CN101060120B (https=)
DE (1) DE602005025951D1 (https=)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4200926B2 (ja) 2004-03-10 2008-12-24 ソニー株式会社 半導体集積回路
JP2007095787A (ja) * 2005-09-27 2007-04-12 Nec Electronics Corp 半導体集積回路
JP4621113B2 (ja) * 2005-10-28 2011-01-26 ルネサスエレクトロニクス株式会社 半導体集積回路装置
JP2007243077A (ja) * 2006-03-13 2007-09-20 Renesas Technology Corp 半導体集積回路装置
JP5038654B2 (ja) * 2006-06-06 2012-10-03 ルネサスエレクトロニクス株式会社 半導体装置
JP4144892B2 (ja) * 2006-08-28 2008-09-03 キヤノン株式会社 光電変換装置及び撮像装置
US7649787B2 (en) * 2006-09-05 2010-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR100835425B1 (ko) * 2006-09-14 2008-06-04 동부일렉트로닉스 주식회사 Ｍｔｃｍｏｓ반도체 집적회로
KR100772269B1 (ko) * 2006-09-21 2007-11-01 동부일렉트로닉스 주식회사 Ｍｔｃｍｏｓ 반도체 집적회로의 설계방법
JP2008098353A (ja) * 2006-10-11 2008-04-24 Nec Electronics Corp 半導体集積回路
JP5198785B2 (ja) 2007-03-30 2013-05-15 ルネサスエレクトロニクス株式会社 半導体装置
JP4962173B2 (ja) 2007-07-02 2012-06-27 ソニー株式会社 半導体集積回路
JP5528662B2 (ja) * 2007-09-18 2014-06-25 ソニー株式会社 半導体集積回路
JP4636077B2 (ja) 2007-11-07 2011-02-23 ソニー株式会社 半導体集積回路
US8922247B2 (en) * 2007-11-14 2014-12-30 Arm Limited Power controlling integrated circuit and retention switching circuit
JP2009170650A (ja) * 2008-01-16 2009-07-30 Sony Corp 半導体集積回路およびその配置配線方法
JP4535136B2 (ja) * 2008-01-17 2010-09-01 ソニー株式会社 半導体集積回路、および、スイッチの配置配線方法
JP4492736B2 (ja) 2008-06-12 2010-06-30 ソニー株式会社 半導体集積回路
JP5152160B2 (ja) * 2009-11-24 2013-02-27 ソニー株式会社 半導体集積回路
TWI403742B (zh) * 2009-12-22 2013-08-01 Mstar Semiconductor Inc 靜態瞬態電壓降分析裝置及方法
TWI511453B (zh) * 2010-02-02 2015-12-01 Advanced Risc Mach Ltd 功率控制積體電路與保持切換電路
WO2011118351A1 (en) * 2010-03-25 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5540910B2 (ja) * 2010-06-08 2014-07-02 富士通セミコンダクター株式会社 集積回路、集積回路設計装置及び集積回路設計方法
JP2012216590A (ja) * 2011-03-31 2012-11-08 Elpida Memory Inc 半導体装置
US9317087B2 (en) * 2012-04-26 2016-04-19 Ravindraraj Ramaraju Memory column drowsy control
US8779592B2 (en) * 2012-05-01 2014-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Via-free interconnect structure with self-aligned metal line interconnections
JP5540389B2 (ja) * 2012-09-14 2014-07-02 ソニー株式会社 半導体集積回路
JP6031675B2 (ja) * 2012-10-01 2016-11-24 株式会社ソシオネクスト 半導体装置のレイアウト構造およびレイアウト方法
JP5542191B2 (ja) * 2012-12-10 2014-07-09 ルネサスエレクトロニクス株式会社 半導体集積回路の製造方法
KR102000643B1 (ko) * 2012-12-27 2019-07-16 엘지디스플레이 주식회사 유기발광 표시장치
CN104459302B (zh) * 2013-09-23 2017-05-17 赛恩倍吉科技顾问（深圳）有限公司 功率偏差检测装置
US9058459B1 (en) * 2013-12-30 2015-06-16 Samsung Electronics Co., Ltd. Integrated circuit layouts and methods to reduce leakage
JP5773338B2 (ja) * 2014-03-10 2015-09-02 ソニー株式会社 半導体集積回路
JP6384210B2 (ja) * 2014-09-02 2018-09-05 株式会社ソシオネクスト 半導体装置
US10262981B2 (en) * 2016-04-29 2019-04-16 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit, system for and method of forming an integrated circuit
US10318694B2 (en) * 2016-11-18 2019-06-11 Qualcomm Incorporated Adaptive multi-tier power distribution grids for integrated circuits
KR102541506B1 (ko) 2018-01-17 2023-06-08 삼성전자주식회사 스위치 셀들을 포함하는 반도체 장치
JP7614518B2 (ja) * 2020-11-27 2025-01-16 株式会社ソシオネクスト 半導体集積回路装置の設計方法、半導体集積回路装置及びプログラム
JP7635557B2 (ja) * 2021-01-19 2025-02-26 株式会社ソシオネクスト 半導体装置
WO2022186012A1 (ja) * 2021-03-05 2022-09-09 株式会社ソシオネクスト 半導体集積回路装置
US11433285B1 (en) 2021-03-09 2022-09-06 Acushnet Company Golf club head with hosel hole cover
KR102920756B1 (ko) 2021-05-20 2026-01-29 삼성전자주식회사 반도체 장치

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001298090A (ja) 2000-04-17 2001-10-26 Nec Corp 半導体装置

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2972425B2 (ja) * 1992-01-30 1999-11-08 日本電気アイシーマイコンシステム株式会社 半導体集積回路
JP3020370B2 (ja) 1993-01-13 2000-03-15 株式会社日本自動車部品総合研究所 気液分離装置
JP3488735B2 (ja) 1994-03-03 2004-01-19 三菱電機株式会社 半導体装置
US5615162A (en) * 1995-01-04 1997-03-25 Texas Instruments Incorporated Selective power to memory
US6000829A (en) * 1996-09-11 1999-12-14 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit capable of compensating for flucuations in power supply voltage level and method of manufacturing the same
JP4056107B2 (ja) 1997-06-20 2008-03-05 エルピーダメモリ株式会社 半導体集積回路
JPH11354721A (ja) * 1998-06-04 1999-12-24 Mitsubishi Electric Corp 半導体装置
WO1999066640A1 (en) * 1998-06-18 1999-12-23 Hitachi, Ltd. Semiconductor integrated circuit
US6169419B1 (en) * 1998-09-10 2001-01-02 Intel Corporation Method and apparatus for reducing standby leakage current using a transistor stack effect
JP3209972B2 (ja) 1999-01-14 2001-09-17 沖電気工業株式会社 半導体集積回路装置
JP3530450B2 (ja) * 2000-02-18 2004-05-24 Ｎｅｃエレクトロニクス株式会社 マクロ回路の配線方法、マクロ回路配線装置、及びマクロ回路
JP2002016144A (ja) * 2000-06-29 2002-01-18 Toshiba Corp 上層配線端子付きセル
US6501300B2 (en) * 2000-11-21 2002-12-31 Hitachi, Ltd. Semiconductor integrated circuit
JP3847147B2 (ja) 2001-11-22 2006-11-15 富士通株式会社 マルチスレショールド電圧ｍｉｓ集積回路装置及びその回路設計方法
DE10209073A1 (de) * 2002-02-28 2003-09-18 Infineon Technologies Ag Halbleiterchip, sowie Verfahren und Vorrichtung zur Herstellung des Halbleiterchips
JP3770836B2 (ja) * 2002-01-23 2006-04-26 株式会社ルネサステクノロジ 高速に電源スイッチのオンオフが可能な論理回路及び同論理回路における電流低減方法
JP3879738B2 (ja) * 2002-04-03 2007-02-14 ソニー株式会社 集積回路装置、集積回路装置の構成方法、および、集積回路装置の製造方法
JP3957560B2 (ja) 2002-05-23 2007-08-15 松下電器産業株式会社 半導体装置
JP4039618B2 (ja) 2002-08-09 2008-01-30 東邦瓦斯株式会社 固体酸化物形燃料電池
JP2004186666A (ja) 2002-10-09 2004-07-02 Fujitsu Ltd 半導体集積回路装置
JP4200926B2 (ja) * 2004-03-10 2008-12-24 ソニー株式会社 半導体集積回路
US7279926B2 (en) * 2004-05-27 2007-10-09 Qualcomm Incoporated Headswitch and footswitch circuitry for power management
WO2006114875A1 (ja) 2005-04-21 2006-11-02 Renesas Technology Corp. 半導体集積回路
US7253662B2 (en) * 2005-04-22 2007-08-07 Faraday Technology Corp. Method for forming an electric device comprising power switches around a logic circuit and related apparatus
JP4535134B2 (ja) * 2008-01-16 2010-09-01 ソニー株式会社 半導体集積回路およびその電源制御方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001298090A (ja) 2000-04-17 2001-10-26 Nec Corp 半導体装置

Also Published As

Publication number Publication date
EP2287907B1 (en) 2018-11-28
EP1575091B1 (en) 2011-01-19
EP2287906A2 (en) 2011-02-23
US20070241779A1 (en) 2007-10-18
EP1575091A2 (en) 2005-09-14
DE602005025951D1 (de) 2011-03-03
USRE48373E1 (en) 2020-12-29
US7459934B2 (en) 2008-12-02
EP2287906B1 (en) 2016-03-09
JP2005259879A (ja) 2005-09-22
EP2835826A3 (en) 2015-04-22
EP2835826B1 (en) 2019-06-26
US7274210B2 (en) 2007-09-25
EP2287907A2 (en) 2011-02-23
JP4200926B2 (ja) 2008-12-24
EP2835826A2 (en) 2015-02-11
US20050200383A1 (en) 2005-09-15
EP2835827B1 (en) 2019-06-12
US7456659B2 (en) 2008-11-25
CN1667815A (zh) 2005-09-14
EP1575091A3 (en) 2009-03-18
CN101060120B (zh) 2010-06-23
CN101060120A (zh) 2007-10-24
US20090079469A1 (en) 2009-03-26
US7696788B2 (en) 2010-04-13
KR20060043789A (ko) 2006-05-15
CN1324685C (zh) 2007-07-04
EP2287907A3 (en) 2011-04-20
USRE48694E1 (en) 2021-08-17
EP2287906A3 (en) 2011-04-20
EP2835827A3 (en) 2015-04-22
EP2835827A2 (en) 2015-02-11
USRE43912E1 (en) 2013-01-08
US20070241790A1 (en) 2007-10-18

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