KR100965948B1 - 표시 장치 및 그 제조 방법 - Google Patents

표시 장치 및 그 제조 방법 Download PDF

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Publication number
KR100965948B1
KR100965948B1 KR1020030033205A KR20030033205A KR100965948B1 KR 100965948 B1 KR100965948 B1 KR 100965948B1 KR 1020030033205 A KR1020030033205 A KR 1020030033205A KR 20030033205 A KR20030033205 A KR 20030033205A KR 100965948 B1 KR100965948 B1 KR 100965948B1
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South Korea
Prior art keywords
storage capacitor
switching element
conductive
electrode
scan line
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Expired - Fee Related
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KR1020030033205A
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English (en)
Korean (ko)
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KR20030091784A (ko
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다나까쯔또무
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소니 주식회사
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020030033205A 2002-05-24 2003-05-24 표시 장치 및 그 제조 방법 Expired - Fee Related KR100965948B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00151322 2002-05-24
JP2002151322A JP4179800B2 (ja) 2002-05-24 2002-05-24 表示装置及びその製造方法

Publications (2)

Publication Number Publication Date
KR20030091784A KR20030091784A (ko) 2003-12-03
KR100965948B1 true KR100965948B1 (ko) 2010-06-24

Family

ID=29768951

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030033205A Expired - Fee Related KR100965948B1 (ko) 2002-05-24 2003-05-24 표시 장치 및 그 제조 방법

Country Status (4)

Country Link
US (4) US6888164B2 (enExample)
JP (1) JP4179800B2 (enExample)
KR (1) KR100965948B1 (enExample)
TW (1) TWI227458B (enExample)

Families Citing this family (23)

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Publication number Priority date Publication date Assignee Title
US6509616B2 (en) * 2000-09-29 2003-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
TWI231996B (en) * 2003-03-28 2005-05-01 Au Optronics Corp Dual gate layout for thin film transistor
TWI224234B (en) * 2003-08-12 2004-11-21 Quanta Display Inc Pixel structure and fabricating method thereof
US7521368B2 (en) * 2004-05-07 2009-04-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101112547B1 (ko) * 2005-01-18 2012-03-13 삼성전자주식회사 박막 트랜지스터 표시판 및 박막 트랜지스터 표시판의제조 방법
KR101112549B1 (ko) * 2005-01-31 2012-06-12 삼성전자주식회사 박막 트랜지스터 표시판
US7863612B2 (en) * 2006-07-21 2011-01-04 Semiconductor Energy Laboratory Co., Ltd. Display device and semiconductor device
KR101352343B1 (ko) * 2006-12-11 2014-01-15 삼성디스플레이 주식회사 액정표시장치
JP2008209732A (ja) * 2007-02-27 2008-09-11 Sharp Corp 薄膜トランジスタアレイ基板、その製造方法および液晶表示装置
TWI339444B (en) * 2007-05-30 2011-03-21 Au Optronics Corp Conductor structure, pixel structure, and methods of forming the same
KR100905940B1 (ko) * 2007-09-19 2009-07-06 세메스 주식회사 미세 회로 소자의 제조 방법 및 장치
JP4710953B2 (ja) * 2007-10-31 2011-06-29 カシオ計算機株式会社 液晶表示装置及びその駆動方法
KR101698751B1 (ko) 2009-10-16 2017-01-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치 및 전자 장치
WO2012111586A1 (ja) * 2011-02-18 2012-08-23 シャープ株式会社 半導体装置及び表示装置
US9268427B2 (en) * 2011-09-23 2016-02-23 Apple Inc. Multi-mode voltages for touchscreens
KR101951365B1 (ko) 2012-02-08 2019-04-26 삼성디스플레이 주식회사 액정 표시 장치
US20140014948A1 (en) * 2012-07-12 2014-01-16 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
JP2014074908A (ja) * 2012-09-13 2014-04-24 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の駆動方法
US20150221677A1 (en) * 2012-09-24 2015-08-06 Sharp Kabushiki Kaisha Active matrix substrate, display device, and production method therefor
CN103746000B (zh) * 2013-12-25 2017-03-08 深圳市华星光电技术有限公司 一种多晶硅tft器件及其制造方法
CN105807520A (zh) * 2016-05-20 2016-07-27 深圳市华星光电技术有限公司 3t像素结构及液晶显示装置
JP2019117342A (ja) * 2017-12-27 2019-07-18 シャープ株式会社 アクティブマトリックス基板、アクティブマトリックス基板の製造方法および液晶表示装置
TWI836787B (zh) 2022-12-13 2024-03-21 友達光電股份有限公司 顯示面板

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0720494A (ja) * 1993-06-23 1995-01-24 Sharp Corp アクティブマトリックス基板及びその製造方法
JPH08292449A (ja) * 1995-04-25 1996-11-05 Hitachi Ltd アクティブマトリクス型表示装置
JP2002006341A (ja) * 2000-06-26 2002-01-09 Seiko Epson Corp 液晶装置およびその製造方法

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JPH0824193B2 (ja) * 1990-10-16 1996-03-06 工業技術院長 平板型光弁駆動用半導体装置の製造方法
JP2626451B2 (ja) * 1993-03-23 1997-07-02 日本電気株式会社 液晶表示装置の駆動方法
JPH07146489A (ja) * 1993-11-26 1995-06-06 Fujitsu Ltd 液晶表示装置
JP3833327B2 (ja) * 1997-02-03 2006-10-11 三洋電機株式会社 薄膜トランジスタの製造方法、表示装置、密着型イメージセンサ、三次元ｉｃ
US6246070B1 (en) * 1998-08-21 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same
JP4008133B2 (ja) * 1998-12-25 2007-11-14 株式会社半導体エネルギー研究所 半導体装置
JP4307635B2 (ja) * 1999-06-22 2009-08-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2001033292A1 (fr) * 1999-10-29 2001-05-10 Hitachi, Ltd. Dispositif d'affichage a cristaux liquides
JP2002040486A (ja) * 2000-05-19 2002-02-06 Seiko Epson Corp 電気光学装置、その製造方法および電子機器
US6509616B2 (en) * 2000-09-29 2003-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP3832240B2 (ja) * 2000-12-22 2006-10-11 セイコーエプソン株式会社 液晶表示装置の駆動方法
KR100945467B1 (ko) * 2001-10-09 2010-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스위칭소자, 표시장치, 그 스위칭소자를 사용한 발광장치및 반도체장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0720494A (ja) * 1993-06-23 1995-01-24 Sharp Corp アクティブマトリックス基板及びその製造方法
JPH08292449A (ja) * 1995-04-25 1996-11-05 Hitachi Ltd アクティブマトリクス型表示装置
JP2002006341A (ja) * 2000-06-26 2002-01-09 Seiko Epson Corp 液晶装置およびその製造方法

Also Published As

Publication number Publication date
US20070181885A1 (en) 2007-08-09
US6888164B2 (en) 2005-05-03
TW200403620A (en) 2004-03-01
US7205172B2 (en) 2007-04-17
US8026116B2 (en) 2011-09-27
US20040017340A1 (en) 2004-01-29
US7142201B2 (en) 2006-11-28
JP4179800B2 (ja) 2008-11-12
KR20030091784A (ko) 2003-12-03
US20040263455A1 (en) 2004-12-30
JP2003344866A (ja) 2003-12-03
TWI227458B (en) 2005-02-01
US20050179040A1 (en) 2005-08-18

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