TWI227458B - Display device and method of manufacturing the same - Google Patents
Display device and method of manufacturing the same Download PDFInfo
- Publication number
- TWI227458B TWI227458B TW092114012A TW92114012A TWI227458B TW I227458 B TWI227458 B TW I227458B TW 092114012 A TW092114012 A TW 092114012A TW 92114012 A TW92114012 A TW 92114012A TW I227458 B TWI227458 B TW I227458B
- Authority
- TW
- Taiwan
- Prior art keywords
- switching element
- display device
- scan line
- electrode
- terminal
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 239000004065 semiconductor Substances 0.000 claims abstract description 156
- 238000003860 storage Methods 0.000 claims abstract description 40
- 239000010408 film Substances 0.000 claims description 166
- 239000003990 capacitor Substances 0.000 claims description 134
- 238000000034 method Methods 0.000 claims description 42
- 239000004020 conductor Substances 0.000 claims description 34
- 239000012535 impurity Substances 0.000 claims description 21
- 230000001681 protective effect Effects 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 49
- 239000010410 layer Substances 0.000 description 47
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 19
- 229910052698 phosphorus Inorganic materials 0.000 description 18
- 239000011574 phosphorus Substances 0.000 description 18
- 230000008569 process Effects 0.000 description 17
- 101150003196 PCS1 gene Proteins 0.000 description 13
- 101100493726 Phalaenopsis sp. BIBSY212 gene Proteins 0.000 description 13
- 101100030895 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) RPT4 gene Proteins 0.000 description 13
- 239000011229 interlayer Substances 0.000 description 10
- 238000001312 dry etching Methods 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
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- 101100349268 Caenorhabditis elegans ntr-2 gene Proteins 0.000 description 5
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- 239000011521 glass Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 101100028900 Caenorhabditis elegans pcs-1 gene Proteins 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 101150071172 PCS2 gene Proteins 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
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- 238000001459 lithography Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
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- 230000007423 decrease Effects 0.000 description 2
- 238000012217 deletion Methods 0.000 description 2
- 230000037430 deletion Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
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- 238000002347 injection Methods 0.000 description 2
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- 238000002955 isolation Methods 0.000 description 2
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- 239000004575 stone Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 101150111331 CCL5 gene Proteins 0.000 description 1
- 101150049756 CCL6 gene Proteins 0.000 description 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
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- 238000007743 anodising Methods 0.000 description 1
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- 210000000988 bone and bone Anatomy 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000002917 insecticide Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 235000021251 pulses Nutrition 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 235000013548 tempeh Nutrition 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002151322A JP4179800B2 (ja) | 2002-05-24 | 2002-05-24 | 表示装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200403620A TW200403620A (en) | 2004-03-01 |
| TWI227458B true TWI227458B (en) | 2005-02-01 |
Family
ID=29768951
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092114012A TWI227458B (en) | 2002-05-24 | 2003-05-23 | Display device and method of manufacturing the same |
Country Status (4)
| Country | Link |
|---|---|
| US (4) | US6888164B2 (enExample) |
| JP (1) | JP4179800B2 (enExample) |
| KR (1) | KR100965948B1 (enExample) |
| TW (1) | TWI227458B (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6509616B2 (en) | 2000-09-29 | 2003-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its manufacturing method |
| TWI231996B (en) * | 2003-03-28 | 2005-05-01 | Au Optronics Corp | Dual gate layout for thin film transistor |
| TWI224234B (en) * | 2003-08-12 | 2004-11-21 | Quanta Display Inc | Pixel structure and fabricating method thereof |
| US7521368B2 (en) * | 2004-05-07 | 2009-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR101112547B1 (ko) * | 2005-01-18 | 2012-03-13 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 박막 트랜지스터 표시판의제조 방법 |
| KR101112549B1 (ko) * | 2005-01-31 | 2012-06-12 | 삼성전자주식회사 | 박막 트랜지스터 표시판 |
| US7863612B2 (en) * | 2006-07-21 | 2011-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Display device and semiconductor device |
| KR101352343B1 (ko) * | 2006-12-11 | 2014-01-15 | 삼성디스플레이 주식회사 | 액정표시장치 |
| JP2008209732A (ja) * | 2007-02-27 | 2008-09-11 | Sharp Corp | 薄膜トランジスタアレイ基板、その製造方法および液晶表示装置 |
| TWI339444B (en) * | 2007-05-30 | 2011-03-21 | Au Optronics Corp | Conductor structure, pixel structure, and methods of forming the same |
| KR100905940B1 (ko) * | 2007-09-19 | 2009-07-06 | 세메스 주식회사 | 미세 회로 소자의 제조 방법 및 장치 |
| JP4710953B2 (ja) * | 2007-10-31 | 2011-06-29 | カシオ計算機株式会社 | 液晶表示装置及びその駆動方法 |
| KR101943293B1 (ko) | 2009-10-16 | 2019-01-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 표시 장치 및 전자 장치 |
| WO2012111586A1 (ja) * | 2011-02-18 | 2012-08-23 | シャープ株式会社 | 半導体装置及び表示装置 |
| US9268427B2 (en) * | 2011-09-23 | 2016-02-23 | Apple Inc. | Multi-mode voltages for touchscreens |
| KR101951365B1 (ko) | 2012-02-08 | 2019-04-26 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
| US20140014948A1 (en) * | 2012-07-12 | 2014-01-16 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device |
| JP2014074908A (ja) * | 2012-09-13 | 2014-04-24 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の駆動方法 |
| WO2014046068A1 (ja) * | 2012-09-24 | 2014-03-27 | シャープ株式会社 | アクティブマトリックス基板、表示装置、及び、その製造方法 |
| CN103746000B (zh) * | 2013-12-25 | 2017-03-08 | 深圳市华星光电技术有限公司 | 一种多晶硅tft器件及其制造方法 |
| CN105807520A (zh) * | 2016-05-20 | 2016-07-27 | 深圳市华星光电技术有限公司 | 3t像素结构及液晶显示装置 |
| JP2019117342A (ja) * | 2017-12-27 | 2019-07-18 | シャープ株式会社 | アクティブマトリックス基板、アクティブマトリックス基板の製造方法および液晶表示装置 |
| TWI836787B (zh) | 2022-12-13 | 2024-03-21 | 友達光電股份有限公司 | 顯示面板 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0824193B2 (ja) * | 1990-10-16 | 1996-03-06 | 工業技術院長 | 平板型光弁駆動用半導体装置の製造方法 |
| JP2626451B2 (ja) * | 1993-03-23 | 1997-07-02 | 日本電気株式会社 | 液晶表示装置の駆動方法 |
| JP2898509B2 (ja) * | 1993-06-23 | 1999-06-02 | シャープ株式会社 | アクティブマトリックス基板及びその製造方法 |
| JPH07146489A (ja) * | 1993-11-26 | 1995-06-06 | Fujitsu Ltd | 液晶表示装置 |
| JPH08292449A (ja) * | 1995-04-25 | 1996-11-05 | Hitachi Ltd | アクティブマトリクス型表示装置 |
| JP3833327B2 (ja) * | 1997-02-03 | 2006-10-11 | 三洋電機株式会社 | 薄膜トランジスタの製造方法、表示装置、密着型イメージセンサ、三次元ｉｃ |
| US6246070B1 (en) * | 1998-08-21 | 2001-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same |
| JP4008133B2 (ja) * | 1998-12-25 | 2007-11-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP4307635B2 (ja) * | 1999-06-22 | 2009-08-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| WO2001033292A1 (fr) * | 1999-10-29 | 2001-05-10 | Hitachi, Ltd. | Dispositif d'affichage a cristaux liquides |
| JP2002040486A (ja) * | 2000-05-19 | 2002-02-06 | Seiko Epson Corp | 電気光学装置、その製造方法および電子機器 |
| JP2002006341A (ja) * | 2000-06-26 | 2002-01-09 | Seiko Epson Corp | 液晶装置およびその製造方法 |
| US6509616B2 (en) * | 2000-09-29 | 2003-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its manufacturing method |
| JP3832240B2 (ja) * | 2000-12-22 | 2006-10-11 | セイコーエプソン株式会社 | 液晶表示装置の駆動方法 |
| KR100945467B1 (ko) * | 2001-10-09 | 2010-03-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 스위칭소자, 표시장치, 그 스위칭소자를 사용한 발광장치및 반도체장치 |
-
2002
- 2002-05-24 JP JP2002151322A patent/JP4179800B2/ja not_active Expired - Fee Related
-
2003
- 2003-05-21 US US10/442,374 patent/US6888164B2/en not_active Expired - Lifetime
- 2003-05-23 TW TW092114012A patent/TWI227458B/zh not_active IP Right Cessation
- 2003-05-24 KR KR1020030033205A patent/KR100965948B1/ko not_active Expired - Fee Related
-
2004
- 2004-07-27 US US10/899,689 patent/US7205172B2/en not_active Expired - Lifetime
-
2005
- 2005-04-13 US US11/106,392 patent/US7142201B2/en not_active Expired - Lifetime
-
2007
- 2007-03-23 US US11/728,173 patent/US8026116B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US7205172B2 (en) | 2007-04-17 |
| US20040017340A1 (en) | 2004-01-29 |
| KR20030091784A (ko) | 2003-12-03 |
| TW200403620A (en) | 2004-03-01 |
| US7142201B2 (en) | 2006-11-28 |
| JP4179800B2 (ja) | 2008-11-12 |
| US8026116B2 (en) | 2011-09-27 |
| US20050179040A1 (en) | 2005-08-18 |
| US6888164B2 (en) | 2005-05-03 |
| US20040263455A1 (en) | 2004-12-30 |
| US20070181885A1 (en) | 2007-08-09 |
| KR100965948B1 (ko) | 2010-06-24 |
| JP2003344866A (ja) | 2003-12-03 |
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