JP4179800B2 - 表示装置及びその製造方法 - Google Patents

表示装置及びその製造方法 Download PDF

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Publication number
JP4179800B2
JP4179800B2 JP2002151322A JP2002151322A JP4179800B2 JP 4179800 B2 JP4179800 B2 JP 4179800B2 JP 2002151322 A JP2002151322 A JP 2002151322A JP 2002151322 A JP2002151322 A JP 2002151322A JP 4179800 B2 JP4179800 B2 JP 4179800B2
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JP
Japan
Prior art keywords
semiconductor film
electrode
conductivity type
storage capacitor
scanning line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002151322A
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English (en)
Japanese (ja)
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JP2003344866A5 (enExample
JP2003344866A (ja
Inventor
田中　　勉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2002151322A priority Critical patent/JP4179800B2/ja
Priority to US10/442,374 priority patent/US6888164B2/en
Priority to TW092114012A priority patent/TWI227458B/zh
Priority to KR1020030033205A priority patent/KR100965948B1/ko
Publication of JP2003344866A publication Critical patent/JP2003344866A/ja
Priority to US10/899,689 priority patent/US7205172B2/en
Publication of JP2003344866A5 publication Critical patent/JP2003344866A5/ja
Priority to US11/106,392 priority patent/US7142201B2/en
Priority to US11/728,173 priority patent/US8026116B2/en
Application granted granted Critical
Publication of JP4179800B2 publication Critical patent/JP4179800B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2002151322A 2002-05-24 2002-05-24 表示装置及びその製造方法 Expired - Fee Related JP4179800B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2002151322A JP4179800B2 (ja) 2002-05-24 2002-05-24 表示装置及びその製造方法
US10/442,374 US6888164B2 (en) 2002-05-24 2003-05-21 Display pixel having a capacitive electrode with different conductivity type from the switching element
TW092114012A TWI227458B (en) 2002-05-24 2003-05-23 Display device and method of manufacturing the same
KR1020030033205A KR100965948B1 (ko) 2002-05-24 2003-05-24 표시 장치 및 그 제조 방법
US10/899,689 US7205172B2 (en) 2002-05-24 2004-07-27 Display device and method of manufacturing the same
US11/106,392 US7142201B2 (en) 2002-05-24 2005-04-13 Display device and method of manufacturing the same
US11/728,173 US8026116B2 (en) 2002-05-24 2007-03-23 Display device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002151322A JP4179800B2 (ja) 2002-05-24 2002-05-24 表示装置及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006319218A Division JP4544242B2 (ja) 2006-11-27 2006-11-27 表示装置

Publications (3)

Publication Number Publication Date
JP2003344866A JP2003344866A (ja) 2003-12-03
JP2003344866A5 JP2003344866A5 (enExample) 2005-04-07
JP4179800B2 true JP4179800B2 (ja) 2008-11-12

Family

ID=29768951

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002151322A Expired - Fee Related JP4179800B2 (ja) 2002-05-24 2002-05-24 表示装置及びその製造方法

Country Status (4)

Country Link
US (4) US6888164B2 (enExample)
JP (1) JP4179800B2 (enExample)
KR (1) KR100965948B1 (enExample)
TW (1) TWI227458B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9330586B2 (en) 2012-02-08 2016-05-03 Samsung Display Co., Ltd. Liquid crystal display

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US6509616B2 (en) 2000-09-29 2003-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
TWI231996B (en) * 2003-03-28 2005-05-01 Au Optronics Corp Dual gate layout for thin film transistor
TWI224234B (en) * 2003-08-12 2004-11-21 Quanta Display Inc Pixel structure and fabricating method thereof
US7521368B2 (en) * 2004-05-07 2009-04-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101112547B1 (ko) * 2005-01-18 2012-03-13 삼성전자주식회사 박막 트랜지스터 표시판 및 박막 트랜지스터 표시판의제조 방법
KR101112549B1 (ko) * 2005-01-31 2012-06-12 삼성전자주식회사 박막 트랜지스터 표시판
US7863612B2 (en) * 2006-07-21 2011-01-04 Semiconductor Energy Laboratory Co., Ltd. Display device and semiconductor device
KR101352343B1 (ko) * 2006-12-11 2014-01-15 삼성디스플레이 주식회사 액정표시장치
JP2008209732A (ja) * 2007-02-27 2008-09-11 Sharp Corp 薄膜トランジスタアレイ基板、その製造方法および液晶表示装置
TWI339444B (en) * 2007-05-30 2011-03-21 Au Optronics Corp Conductor structure, pixel structure, and methods of forming the same
KR100905940B1 (ko) * 2007-09-19 2009-07-06 세메스 주식회사 미세 회로 소자의 제조 방법 및 장치
JP4710953B2 (ja) * 2007-10-31 2011-06-29 カシオ計算機株式会社 液晶表示装置及びその駆動方法
KR101943293B1 (ko) 2009-10-16 2019-01-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치 및 전자 장치
WO2012111586A1 (ja) * 2011-02-18 2012-08-23 シャープ株式会社 半導体装置及び表示装置
US9268427B2 (en) * 2011-09-23 2016-02-23 Apple Inc. Multi-mode voltages for touchscreens
US20140014948A1 (en) * 2012-07-12 2014-01-16 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
JP2014074908A (ja) * 2012-09-13 2014-04-24 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の駆動方法
WO2014046068A1 (ja) * 2012-09-24 2014-03-27 シャープ株式会社 アクティブマトリックス基板、表示装置、及び、その製造方法
CN103746000B (zh) * 2013-12-25 2017-03-08 深圳市华星光电技术有限公司 一种多晶硅tft器件及其制造方法
CN105807520A (zh) * 2016-05-20 2016-07-27 深圳市华星光电技术有限公司 3t像素结构及液晶显示装置
JP2019117342A (ja) * 2017-12-27 2019-07-18 シャープ株式会社 アクティブマトリックス基板、アクティブマトリックス基板の製造方法および液晶表示装置
TWI836787B (zh) 2022-12-13 2024-03-21 友達光電股份有限公司 顯示面板

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JPH0824193B2 (ja) * 1990-10-16 1996-03-06 工業技術院長 平板型光弁駆動用半導体装置の製造方法
JP2626451B2 (ja) * 1993-03-23 1997-07-02 日本電気株式会社 液晶表示装置の駆動方法
JP2898509B2 (ja) * 1993-06-23 1999-06-02 シャープ株式会社 アクティブマトリックス基板及びその製造方法
JPH07146489A (ja) * 1993-11-26 1995-06-06 Fujitsu Ltd 液晶表示装置
JPH08292449A (ja) * 1995-04-25 1996-11-05 Hitachi Ltd アクティブマトリクス型表示装置
JP3833327B2 (ja) * 1997-02-03 2006-10-11 三洋電機株式会社 薄膜トランジスタの製造方法、表示装置、密着型イメージセンサ、三次元ｉｃ
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JP4307635B2 (ja) * 1999-06-22 2009-08-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2001033292A1 (fr) * 1999-10-29 2001-05-10 Hitachi, Ltd. Dispositif d'affichage a cristaux liquides
JP2002040486A (ja) * 2000-05-19 2002-02-06 Seiko Epson Corp 電気光学装置、その製造方法および電子機器
JP2002006341A (ja) * 2000-06-26 2002-01-09 Seiko Epson Corp 液晶装置およびその製造方法
US6509616B2 (en) * 2000-09-29 2003-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP3832240B2 (ja) * 2000-12-22 2006-10-11 セイコーエプソン株式会社 液晶表示装置の駆動方法
KR100945467B1 (ko) * 2001-10-09 2010-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스위칭소자, 표시장치, 그 스위칭소자를 사용한 발광장치및 반도체장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9330586B2 (en) 2012-02-08 2016-05-03 Samsung Display Co., Ltd. Liquid crystal display

Also Published As

Publication number Publication date
US7205172B2 (en) 2007-04-17
US20040017340A1 (en) 2004-01-29
KR20030091784A (ko) 2003-12-03
TW200403620A (en) 2004-03-01
TWI227458B (en) 2005-02-01
US7142201B2 (en) 2006-11-28
US8026116B2 (en) 2011-09-27
US20050179040A1 (en) 2005-08-18
US6888164B2 (en) 2005-05-03
US20040263455A1 (en) 2004-12-30
US20070181885A1 (en) 2007-08-09
KR100965948B1 (ko) 2010-06-24
JP2003344866A (ja) 2003-12-03

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