KR100951420B1 - 반도체 기억 장치 및 전자기기 - Google Patents

반도체 기억 장치 및 전자기기 Download PDF

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Publication number
KR100951420B1
KR100951420B1 KR1020077028493A KR20077028493A KR100951420B1 KR 100951420 B1 KR100951420 B1 KR 100951420B1 KR 1020077028493 A KR1020077028493 A KR 1020077028493A KR 20077028493 A KR20077028493 A KR 20077028493A KR 100951420 B1 KR100951420 B1 KR 100951420B1
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KR
South Korea
Prior art keywords
address
signal
switch
semiconductor memory
memory device
Prior art date
Application number
KR1020077028493A
Other languages
English (en)
Korean (ko)
Other versions
KR20080007668A (ko
Inventor
마사미 가나스기
고이치 구로이와
마코토 무라누시
Original Assignee
후지쯔 마이크로일렉트로닉스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 후지쯔 마이크로일렉트로닉스 가부시키가이샤 filed Critical 후지쯔 마이크로일렉트로닉스 가부시키가이샤
Publication of KR20080007668A publication Critical patent/KR20080007668A/ko
Application granted granted Critical
Publication of KR100951420B1 publication Critical patent/KR100951420B1/ko

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
KR1020077028493A 2005-06-08 2005-06-08 반도체 기억 장치 및 전자기기 KR100951420B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2005/010475 WO2006131964A1 (ja) 2005-06-08 2005-06-08 半導体記憶装置および電子機器

Publications (2)

Publication Number Publication Date
KR20080007668A KR20080007668A (ko) 2008-01-22
KR100951420B1 true KR100951420B1 (ko) 2010-04-07

Family

ID=37498176

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077028493A KR100951420B1 (ko) 2005-06-08 2005-06-08 반도체 기억 장치 및 전자기기

Country Status (4)

Country Link
US (1) US7573779B2 (ja)
JP (1) JP4746038B2 (ja)
KR (1) KR100951420B1 (ja)
WO (1) WO2006131964A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5868862B2 (ja) 2009-11-06 2016-02-24 ユニヴァーシティ・オブ・ワシントン・スルー・イッツ・センター・フォー・コマーシャリゼーション 双性イオンポリマーバイオコンジュゲートおよび関連する方法
CA2872378C (en) 2011-07-20 2016-01-12 University Of Washington Through Its Center For Commercialization Photonic blood typing
US10031138B2 (en) 2012-01-20 2018-07-24 University Of Washington Through Its Center For Commercialization Hierarchical films having ultra low fouling and high recognition element loading properties
US9486906B2 (en) * 2012-05-11 2016-11-08 Illinois Tool Works Inc. Lockout for fastener-driving tool
US10936317B2 (en) * 2019-05-24 2021-03-02 Texas Instruments Incorporated Streaming address generation

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0240193A (ja) * 1988-07-29 1990-02-08 Mitsubishi Electric Corp 半導体記憶装置
JPH05174570A (ja) * 1991-08-20 1993-07-13 Hitachi Ltd 半導体集積回路
JPH08287673A (ja) * 1995-04-19 1996-11-01 Fujitsu Ltd 記憶回路のアドレス制御装置
JP2000011636A (ja) 1998-05-29 2000-01-14 Korea Telecommun 非同期式先入先出メモリ装置の制御回路

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2627903B2 (ja) 1987-09-18 1997-07-09 日本テキサス・インスツルメンツ株式会社 半導体記憶装置
US5177395A (en) * 1991-03-15 1993-01-05 General Electric Company Cadmium free bug lamp with rutile TiO2 coating containing chromium and antimony in the rutile lattice
JPH06282362A (ja) 1993-03-26 1994-10-07 Sanyo Electric Co Ltd 情報処理装置のデバイス駆動制御方法
JPH07134643A (ja) * 1993-11-10 1995-05-23 Hitachi Ltd Ｆｉｆｏメモリ
JPH11162158A (ja) * 1997-11-28 1999-06-18 Sony Corp メモリ装置および画像生成装置
JP4017248B2 (ja) 1998-04-10 2007-12-05 株式会社日立製作所 半導体装置
JP2002334572A (ja) * 2001-05-01 2002-11-22 Matsushita Electric Ind Co Ltd Ｆｉｆｏメモリ装置
JP4392740B2 (ja) 2001-08-30 2010-01-06 株式会社ルネサステクノロジ 半導体記憶回路
JP4240863B2 (ja) * 2001-09-17 2009-03-18 株式会社東芝 半導体集積回路
JP2004326974A (ja) * 2003-04-25 2004-11-18 Toshiba Corp 半導体集積回路装置及びｉｃカード

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0240193A (ja) * 1988-07-29 1990-02-08 Mitsubishi Electric Corp 半導体記憶装置
JPH05174570A (ja) * 1991-08-20 1993-07-13 Hitachi Ltd 半導体集積回路
JPH08287673A (ja) * 1995-04-19 1996-11-01 Fujitsu Ltd 記憶回路のアドレス制御装置
JP2000011636A (ja) 1998-05-29 2000-01-14 Korea Telecommun 非同期式先入先出メモリ装置の制御回路

Also Published As

Publication number Publication date
WO2006131964A1 (ja) 2006-12-14
KR20080007668A (ko) 2008-01-22
US7573779B2 (en) 2009-08-11
US20080130393A1 (en) 2008-06-05
JP4746038B2 (ja) 2011-08-10
JPWO2006131964A1 (ja) 2009-01-08

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