KR100909199B1 - 반도체 기억 장치 - Google Patents

반도체 기억 장치 Download PDF

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Publication number
KR100909199B1
KR100909199B1 KR1020087000541A KR20087000541A KR100909199B1 KR 100909199 B1 KR100909199 B1 KR 100909199B1 KR 1020087000541 A KR1020087000541 A KR 1020087000541A KR 20087000541 A KR20087000541 A KR 20087000541A KR 100909199 B1 KR100909199 B1 KR 100909199B1
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KR
South Korea
Prior art keywords
memory cell
voltage
selection
bit line
word line
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Expired - Fee Related
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KR1020087000541A
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English (en)
Korean (ko)
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KR20080022184A (ko
Inventor
마사유키 다지리
아츠시 시마오카
고지 이노우에
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샤프 가부시키가이샤
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Publication of KR20080022184A publication Critical patent/KR20080022184A/ko
Application granted granted Critical
Publication of KR100909199B1 publication Critical patent/KR100909199B1/ko
Assigned to 인털렉추얼 프로퍼티즈 아이 케이에프티. reassignment 인털렉추얼 프로퍼티즈 아이 케이에프티. 권리의 전부이전등록 Assignors: 샤프 가부시키가이샤
Assigned to 제노제닉 디벨롭먼트 리미티드 라이어빌리티 컴퍼니 reassignment 제노제닉 디벨롭먼트 리미티드 라이어빌리티 컴퍼니 권리의 전부이전등록 Assignors: 인털렉추얼 프로퍼티즈 아이 케이에프티.
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/009—Write using potential difference applied between cell electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used

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  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
KR1020087000541A 2005-06-17 2006-05-01 반도체 기억 장치 Expired - Fee Related KR100909199B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2005178395 2005-06-17
JPJP-P-2005-00178395 2005-06-17
JPJP-P-2005-00282199 2005-09-28
JP2005282199A JP4469319B2 (ja) 2005-06-17 2005-09-28 半導体記憶装置
PCT/JP2006/309086 WO2006134732A1 (ja) 2005-06-17 2006-05-01 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR20080022184A KR20080022184A (ko) 2008-03-10
KR100909199B1 true KR100909199B1 (ko) 2009-07-23

Family

ID=37532099

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087000541A Expired - Fee Related KR100909199B1 (ko) 2005-06-17 2006-05-01 반도체 기억 장치

Country Status (6)

Country Link
US (1) US7668001B2 (https=)
JP (1) JP4469319B2 (https=)
KR (1) KR100909199B1 (https=)
CN (1) CN101199023B (https=)
TW (1) TW200703622A (https=)
WO (1) WO2006134732A1 (https=)

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TWI331343B (en) * 2007-03-28 2010-10-01 Nanya Technology Corp A compensation circuit and a memory with the compensation circuit
WO2008149493A1 (ja) * 2007-06-01 2008-12-11 Panasonic Corporation 抵抗変化型記憶装置
JP5072564B2 (ja) 2007-12-10 2012-11-14 株式会社東芝 半導体記憶装置及びメモリセル電圧印加方法
JP5063337B2 (ja) * 2007-12-27 2012-10-31 株式会社日立製作所 半導体装置
TWI517156B (zh) 2008-02-29 2016-01-11 Toshiba Kk Semiconductor memory device
US8363365B2 (en) * 2008-06-17 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2010009669A (ja) * 2008-06-26 2010-01-14 Toshiba Corp 半導体記憶装置
KR20100011292A (ko) 2008-07-24 2010-02-03 삼성전자주식회사 수직 스트링 상변화 메모리 소자
JP5106297B2 (ja) 2008-07-30 2012-12-26 株式会社東芝 半導体記憶装置
KR20100095079A (ko) * 2009-02-20 2010-08-30 삼성전자주식회사 가변저항 메모리 셀 어레이를 갖는 저항성 메모리 장치, 이를 포함하는 메모리 시스템, 및 그것의 데이터 입출력 방법
JP5175769B2 (ja) * 2009-02-25 2013-04-03 株式会社東芝 半導体記憶装置
WO2010109803A1 (ja) * 2009-03-25 2010-09-30 パナソニック株式会社 抵抗変化型不揮発性記憶装置
KR20100123149A (ko) 2009-05-14 2010-11-24 삼성전자주식회사 저항체를 이용한 반도체 메모리 장치
JP4940287B2 (ja) * 2009-08-06 2012-05-30 株式会社東芝 不揮発性半導体記憶装置
JP2011040112A (ja) * 2009-08-06 2011-02-24 Toshiba Corp 不揮発性半導体記憶装置
JP5214560B2 (ja) * 2009-08-19 2013-06-19 株式会社東芝 不揮発性半導体記憶装置
US8289749B2 (en) * 2009-10-08 2012-10-16 Sandisk 3D Llc Soft forming reversible resistivity-switching element for bipolar switching
KR101652333B1 (ko) 2010-02-10 2016-08-30 삼성전자주식회사 가변 저항 메모리 장치 및 그것의 프로그램 방법
US8848430B2 (en) * 2010-02-23 2014-09-30 Sandisk 3D Llc Step soft program for reversible resistivity-switching elements
JP2012069216A (ja) * 2010-09-24 2012-04-05 Toshiba Corp 不揮発性半導体記憶装置
US8441853B2 (en) 2010-09-30 2013-05-14 Sandisk Technologies Inc. Sensing for NAND memory based on word line position
US8971090B2 (en) 2012-08-31 2015-03-03 Kabushiki Kaisha Toshiba Semiconductor memory device
US9299410B2 (en) * 2013-09-04 2016-03-29 Shintaro SAKAI Reading magnetic memory based on regions within a cell array
US9082502B2 (en) 2013-10-10 2015-07-14 Sandisk Technologies Inc. Bit line and compare voltage modulation for sensing nonvolatile storage elements
KR102379705B1 (ko) 2015-08-20 2022-03-28 삼성전자주식회사 그라운드 스위치를 갖는 메모리 장치
CN111951874B (zh) * 2019-05-14 2022-10-18 兆易创新科技集团股份有限公司 一种校验的方法和装置
JP7686290B2 (ja) * 2020-02-28 2025-06-02 国立大学法人静岡大学 ランダムアクセス型メモリ回路及びメモリシステム
JP7150787B2 (ja) 2020-07-31 2022-10-11 ウィンボンド エレクトロニクス コーポレーション 抵抗変化型クロスバーアレイ装置
US11205480B1 (en) * 2020-09-11 2021-12-21 Micron Technology, Inc. Ramp-based biasing in a memory device
US11705177B2 (en) * 2021-03-12 2023-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor memory devices and methods of manufacturing thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005032401A (ja) 2003-06-17 2005-02-03 Sharp Corp 不揮発性半導体記憶装置及びその書き込み方法と消去方法
KR20050079030A (ko) * 2004-02-04 2005-08-09 삼성전자주식회사 상변화 메모리 장치 및 그에 따른 데이터 라이팅 방법
JP2005222687A (ja) * 2004-02-04 2005-08-18 Samsung Electronics Co Ltd 相変化メモリ装置及びそのライティング方法
JP2006099882A (ja) 2004-09-30 2006-04-13 Sony Corp 記憶装置及び半導体装置

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US6204139B1 (en) * 1998-08-25 2001-03-20 University Of Houston Method for switching the properties of perovskite materials used in thin film resistors
US6473332B1 (en) * 2001-04-04 2002-10-29 The University Of Houston System Electrically variable multi-state resistance computing
US6824814B2 (en) 2002-05-21 2004-11-30 Sharp Laboratories Of America, Inc. Preparation of LCPMO thin films which have reversible resistance change properties
JP4365737B2 (ja) * 2004-06-30 2009-11-18 シャープ株式会社 可変抵抗素子の駆動方法及び記憶装置
KR100670701B1 (ko) * 2004-10-30 2007-01-17 주식회사 하이닉스반도체 저 전압용 반도체 메모리 장치
KR100659502B1 (ko) * 2005-02-04 2006-12-20 삼성전자주식회사 플래쉬 셀로 구현한 퓨즈 어레이 회로
KR101509836B1 (ko) * 2007-11-13 2015-04-06 애플 인크. 멀티 유닛 메모리 디바이스에서의 메모리 유닛의 최적화된 선택

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005032401A (ja) 2003-06-17 2005-02-03 Sharp Corp 不揮発性半導体記憶装置及びその書き込み方法と消去方法
KR20050079030A (ko) * 2004-02-04 2005-08-09 삼성전자주식회사 상변화 메모리 장치 및 그에 따른 데이터 라이팅 방법
JP2005222687A (ja) * 2004-02-04 2005-08-18 Samsung Electronics Co Ltd 相変化メモリ装置及びそのライティング方法
JP2006099882A (ja) 2004-09-30 2006-04-13 Sony Corp 記憶装置及び半導体装置

Also Published As

Publication number Publication date
US20090135641A1 (en) 2009-05-28
CN101199023B (zh) 2013-04-17
WO2006134732A1 (ja) 2006-12-21
TW200703622A (en) 2007-01-16
JP4469319B2 (ja) 2010-05-26
KR20080022184A (ko) 2008-03-10
JP2007026627A (ja) 2007-02-01
CN101199023A (zh) 2008-06-11
TWI297946B (https=) 2008-06-11
US7668001B2 (en) 2010-02-23

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