KR100856171B1 - Ｃｍｐ연마제 및 기판의 연마방법 - Google Patents

Ｃｍｐ연마제 및 기판의 연마방법 Download PDF

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Publication number
KR100856171B1
KR100856171B1 KR1020077001589A KR20077001589A KR100856171B1 KR 100856171 B1 KR100856171 B1 KR 100856171B1 KR 1020077001589 A KR1020077001589 A KR 1020077001589A KR 20077001589 A KR20077001589 A KR 20077001589A KR 100856171 B1 KR100856171 B1 KR 100856171B1
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KR
South Korea
Prior art keywords
polishing
water
weight
cmp
cerium oxide
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Expired - Lifetime
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KR1020077001589A
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English (en)
Korean (ko)
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KR20070026843A (ko
Inventor
마사토 후카사와
나오유키 코야마
야스시 쿠라타
코우지 하가
토시아키 아쿠츠
유우토 오오츠키
Original Assignee
히다치 가세고교 가부시끼가이샤
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Publication of KR20070026843A publication Critical patent/KR20070026843A/ko
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Publication of KR100856171B1 publication Critical patent/KR100856171B1/ko
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020077001589A 2004-07-23 2005-07-20 Ｃｍｐ연마제 및 기판의 연마방법 Expired - Lifetime KR100856171B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00216039 2004-07-23
JP2004216039 2004-07-23

Publications (2)

Publication Number Publication Date
KR20070026843A KR20070026843A (ko) 2007-03-08
KR100856171B1 true KR100856171B1 (ko) 2008-09-03

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077001589A Expired - Lifetime KR100856171B1 (ko) 2004-07-23 2005-07-20 Ｃｍｐ연마제 및 기판의 연마방법

Country Status (7)

Country Link
US (1) US9293344B2 (enExample)
EP (1) EP1796152B1 (enExample)
JP (3) JPWO2006009160A1 (enExample)
KR (1) KR100856171B1 (enExample)
CN (3) CN1985361A (enExample)
TW (1) TWI287040B (enExample)
WO (1) WO2006009160A1 (enExample)

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KR101126124B1 (ko) * 2005-05-30 2012-03-30 주식회사 동진쎄미켐 연마 평탄도를 향상시킨 산화 세륨 슬러리 조성물
CN101375376B (zh) 2006-01-31 2012-09-19 日立化成工业株式会社 绝缘膜研磨用cmp研磨剂、研磨方法、通过该研磨方法研磨的半导体电子部件
MD3809C2 (ro) * 2008-06-26 2009-08-31 Акционерное Общество "Azurit" Procedeu de prelucrare de finisare a plăcilor pentru acoperire din calcar hemogen
JP5632378B2 (ja) * 2008-09-26 2014-11-26 ロディア オペレーションズＲｈｏｄｉａ Ｏｐｅｒａｔｉｏｎｓ 化学機械研磨用研磨剤組成物及びその使用法
DE112012004431T5 (de) * 2011-10-24 2014-07-10 Fujimi Incorporated Zusammensetzung zu Polierzwecken, Polierverfahren unter Verwendung derselben und Verfahren zur Herstellung eines Substrates
US8703004B2 (en) * 2011-11-14 2014-04-22 Kabushiki Kaisha Toshiba Method for chemical planarization and chemical planarization apparatus
US9299573B2 (en) 2012-03-14 2016-03-29 Hitachi Chemical Company, Ltd. Polishing method
EP2826827B1 (en) * 2013-07-18 2019-06-12 Basf Se CMP composition comprising abrasive particles containing ceria
JP2016175948A (ja) * 2013-08-09 2016-10-06 コニカミノルタ株式会社 Ｃｍｐ用研磨液
WO2015046163A1 (ja) * 2013-09-30 2015-04-02 株式会社フジミインコーポレーテッド 研磨用組成物およびその製造方法
JP5920840B2 (ja) * 2013-09-30 2016-05-18 株式会社フジミインコーポレーテッド 研磨用組成物およびその製造方法
CN104356950B (zh) * 2014-10-21 2017-01-18 李金平 一种蓝宝石晶片抛光液
JP6206388B2 (ja) * 2014-12-15 2017-10-04 信越半導体株式会社 シリコンウェーハの研磨方法
CN104987839A (zh) * 2015-06-30 2015-10-21 安徽德诺化工有限公司 Led用蓝宝石衬底研磨液
CN110998800B (zh) * 2017-08-14 2023-09-22 株式会社力森诺科 研磨液、研磨液套剂及研磨方法
WO2019064524A1 (ja) 2017-09-29 2019-04-04 日立化成株式会社 研磨液、研磨液セット及び研磨方法
JP6837958B2 (ja) 2017-12-28 2021-03-03 花王株式会社 酸化珪素膜用研磨液組成物
US11718767B2 (en) 2018-08-09 2023-08-08 Versum Materials Us, Llc Chemical mechanical planarization composition for polishing oxide materials and method of use thereof
JP7216880B2 (ja) 2019-02-19 2023-02-02 株式会社レゾナック 研磨液及び研磨方法
CN111014695A (zh) * 2019-11-21 2020-04-17 苏州新锐合金工具股份有限公司 硬质合金混合料的制备方法

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Also Published As

Publication number Publication date
JP5655879B2 (ja) 2015-01-21
EP1796152A1 (en) 2007-06-13
TWI287040B (en) 2007-09-21
US20080003925A1 (en) 2008-01-03
JP2011103498A (ja) 2011-05-26
TW200609337A (en) 2006-03-16
US9293344B2 (en) 2016-03-22
EP1796152A4 (en) 2008-12-03
JPWO2006009160A1 (ja) 2008-05-01
CN102585765A (zh) 2012-07-18
CN1985361A (zh) 2007-06-20
CN101311205A (zh) 2008-11-26
JP5509114B2 (ja) 2014-06-04
JP2013149992A (ja) 2013-08-01
WO2006009160A1 (ja) 2006-01-26
CN102585765B (zh) 2015-01-21
EP1796152B1 (en) 2019-02-27
KR20070026843A (ko) 2007-03-08

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