TWI287040B - CMP slurry and polishing method for substrate - Google Patents

CMP slurry and polishing method for substrate Download PDF

Info

Publication number
TWI287040B
TWI287040B TW094124651A TW94124651A TWI287040B TW I287040 B TWI287040 B TW I287040B TW 094124651 A TW094124651 A TW 094124651A TW 94124651 A TW94124651 A TW 94124651A TW I287040 B TWI287040 B TW I287040B
Authority
TW
Taiwan
Prior art keywords
honing
weight
water
cmp
agent
Prior art date
Application number
TW094124651A
Other languages
English (en)
Chinese (zh)
Other versions
TW200609337A (en
Inventor
Masato Fukasawa
Naoyuki Koyama
Yasushi Kurata
Kouji Haga
Toshiaki Akutsu
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW200609337A publication Critical patent/TW200609337A/zh
Application granted granted Critical
Publication of TWI287040B publication Critical patent/TWI287040B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW094124651A 2004-07-23 2005-07-21 CMP slurry and polishing method for substrate TWI287040B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004216039 2004-07-23

Publications (2)

Publication Number Publication Date
TW200609337A TW200609337A (en) 2006-03-16
TWI287040B true TWI287040B (en) 2007-09-21

Family

ID=35785268

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094124651A TWI287040B (en) 2004-07-23 2005-07-21 CMP slurry and polishing method for substrate

Country Status (7)

Country Link
US (1) US9293344B2 (enExample)
EP (1) EP1796152B1 (enExample)
JP (3) JPWO2006009160A1 (enExample)
KR (1) KR100856171B1 (enExample)
CN (3) CN1985361A (enExample)
TW (1) TWI287040B (enExample)
WO (1) WO2006009160A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101126124B1 (ko) * 2005-05-30 2012-03-30 주식회사 동진쎄미켐 연마 평탄도를 향상시킨 산화 세륨 슬러리 조성물
CN101375376B (zh) 2006-01-31 2012-09-19 日立化成工业株式会社 绝缘膜研磨用cmp研磨剂、研磨方法、通过该研磨方法研磨的半导体电子部件
MD3809C2 (ro) * 2008-06-26 2009-08-31 Акционерное Общество "Azurit" Procedeu de prelucrare de finisare a plăcilor pentru acoperire din calcar hemogen
JP5632378B2 (ja) * 2008-09-26 2014-11-26 ロディア オペレーションズＲｈｏｄｉａ Ｏｐｅｒａｔｉｏｎｓ 化学機械研磨用研磨剤組成物及びその使用法
DE112012004431T5 (de) * 2011-10-24 2014-07-10 Fujimi Incorporated Zusammensetzung zu Polierzwecken, Polierverfahren unter Verwendung derselben und Verfahren zur Herstellung eines Substrates
US8703004B2 (en) * 2011-11-14 2014-04-22 Kabushiki Kaisha Toshiba Method for chemical planarization and chemical planarization apparatus
US9299573B2 (en) 2012-03-14 2016-03-29 Hitachi Chemical Company, Ltd. Polishing method
EP2826827B1 (en) * 2013-07-18 2019-06-12 Basf Se CMP composition comprising abrasive particles containing ceria
JP2016175948A (ja) * 2013-08-09 2016-10-06 コニカミノルタ株式会社 Ｃｍｐ用研磨液
WO2015046163A1 (ja) * 2013-09-30 2015-04-02 株式会社フジミインコーポレーテッド 研磨用組成物およびその製造方法
JP5920840B2 (ja) * 2013-09-30 2016-05-18 株式会社フジミインコーポレーテッド 研磨用組成物およびその製造方法
CN104356950B (zh) * 2014-10-21 2017-01-18 李金平 一种蓝宝石晶片抛光液
JP6206388B2 (ja) * 2014-12-15 2017-10-04 信越半導体株式会社 シリコンウェーハの研磨方法
CN104987839A (zh) * 2015-06-30 2015-10-21 安徽德诺化工有限公司 Led用蓝宝石衬底研磨液
CN110998800B (zh) * 2017-08-14 2023-09-22 株式会社力森诺科 研磨液、研磨液套剂及研磨方法
WO2019064524A1 (ja) 2017-09-29 2019-04-04 日立化成株式会社 研磨液、研磨液セット及び研磨方法
JP6837958B2 (ja) 2017-12-28 2021-03-03 花王株式会社 酸化珪素膜用研磨液組成物
US11718767B2 (en) 2018-08-09 2023-08-08 Versum Materials Us, Llc Chemical mechanical planarization composition for polishing oxide materials and method of use thereof
JP7216880B2 (ja) 2019-02-19 2023-02-02 株式会社レゾナック 研磨液及び研磨方法
CN111014695A (zh) * 2019-11-21 2020-04-17 苏州新锐合金工具股份有限公司 硬质合金混合料的制备方法

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0661302B1 (en) 1993-12-23 1999-09-01 Nitto Denko Corporation Process for producing aqueous Dispersion-Type Acrylic Polymer, the acrylic polymer obtained thereby, and pressure-sensitive adhesive comprising the acrylic polymer
JP3278532B2 (ja) 1994-07-08 2002-04-30 株式会社東芝 半導体装置の製造方法
JPH10106994A (ja) 1997-01-28 1998-04-24 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
JP3915042B2 (ja) 1997-02-18 2007-05-16 三井化学株式会社 研磨材及び研磨方法
WO2000039843A1 (en) 1998-12-25 2000-07-06 Hitachi Chemical Company, Ltd. Cmp abrasive, liquid additive for cmp abrasive and method for polishing substrate
KR100472882B1 (ko) 1999-01-18 2005-03-07 가부시끼가이샤 도시바 수계 분산체, 이를 이용한 화학 기계 연마용 수계 분산체조성물, 웨이퍼 표면의 연마 방법 및 반도체 장치의 제조방법
KR100447551B1 (ko) 1999-01-18 2004-09-08 가부시끼가이샤 도시바 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법
JP4406111B2 (ja) * 1999-04-28 2010-01-27 花王株式会社 研磨液組成物
JP3912927B2 (ja) 1999-05-10 2007-05-09 花王株式会社 研磨液組成物
JP2001007059A (ja) 1999-06-18 2001-01-12 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
JP2001007061A (ja) 1999-06-18 2001-01-12 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
JP4224659B2 (ja) 1999-06-23 2009-02-18 Ｊｓｒ株式会社 半導体部品用洗浄剤
JP4134458B2 (ja) 1999-06-23 2008-08-20 Ｊｓｒ株式会社 半導体部品用洗浄剤、半導体部品の洗浄方法
JP4247587B2 (ja) 1999-06-23 2009-04-02 Ｊｓｒ株式会社 半導体部品用洗浄剤、半導体部品の洗浄方法、研磨用組成物、および研磨方法
JP4171858B2 (ja) 1999-06-23 2008-10-29 Ｊｓｒ株式会社 研磨用組成物および研磨方法
US6440856B1 (en) 1999-09-14 2002-08-27 Jsr Corporation Cleaning agent for semiconductor parts and method for cleaning semiconductor parts
JP4273475B2 (ja) * 1999-09-21 2009-06-03 株式会社フジミインコーポレーテッド 研磨用組成物
JP2001107089A (ja) 1999-10-07 2001-04-17 Jsr Corp 半導体部品用洗浄剤、半導体部品の洗浄方法、研磨用組成物、および研磨方法
US6348076B1 (en) 1999-10-08 2002-02-19 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
US6638143B2 (en) 1999-12-22 2003-10-28 Applied Materials, Inc. Ion exchange materials for chemical mechanical polishing
JP2001226666A (ja) 2000-02-15 2001-08-21 Hitachi Ltd 研磨砥粒と研磨液及びその研磨方法並びに半導体装置の製造方法
JP2001300285A (ja) 2000-04-18 2001-10-30 Sanyo Chem Ind Ltd 研磨用砥粒分散剤及び研磨用スラリー
TWI281493B (en) 2000-10-06 2007-05-21 Mitsui Mining & Smelting Co Polishing material
EP1369906B1 (en) 2001-02-20 2012-06-27 Hitachi Chemical Company, Ltd. Polishing compound and method for polishing substrate
US6632259B2 (en) 2001-05-18 2003-10-14 Rodel Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
JP5017574B2 (ja) 2001-05-25 2012-09-05 エア プロダクツ アンド ケミカルズ インコーポレイテッド 酸化セリウム研磨剤及び基板の製造方法
JP4972829B2 (ja) 2001-06-28 2012-07-11 日立化成工業株式会社 Ｃｍｐ研磨剤及び基板の研磨方法
JP4076012B2 (ja) * 2002-04-10 2008-04-16 株式会社日本触媒 化学機械研磨用水系分散体
JP2003303792A (ja) * 2002-04-10 2003-10-24 Nippon Shokubai Co Ltd 化学機械研磨用水系分散体と研磨方法
JP2003313542A (ja) 2002-04-22 2003-11-06 Jsr Corp 化学機械研磨用水系分散体
JP2003347247A (ja) 2002-05-28 2003-12-05 Hitachi Chem Co Ltd 半導体絶縁膜用ｃｍｐ研磨剤及び基板の研磨方法
KR100988749B1 (ko) * 2002-07-22 2010-10-20 아사히 가라스 가부시키가이샤 반도체용 연마제, 그 제조 방법 및 연마 방법
JP2004349426A (ja) * 2003-05-21 2004-12-09 Jsr Corp Ｓｔｉ用化学機械研磨方法
US20070218811A1 (en) * 2004-09-27 2007-09-20 Hitachi Chemical Co., Ltd. Cmp polishing slurry and method of polishing substrate
US20080254717A1 (en) * 2004-09-28 2008-10-16 Hitachi Chemical Co., Ltd. Cmp Polishing Slurry and Method of Polishing Substrate

Also Published As

Publication number Publication date
JP5655879B2 (ja) 2015-01-21
EP1796152A1 (en) 2007-06-13
US20080003925A1 (en) 2008-01-03
JP2011103498A (ja) 2011-05-26
KR100856171B1 (ko) 2008-09-03
TW200609337A (en) 2006-03-16
US9293344B2 (en) 2016-03-22
EP1796152A4 (en) 2008-12-03
JPWO2006009160A1 (ja) 2008-05-01
CN102585765A (zh) 2012-07-18
CN1985361A (zh) 2007-06-20
CN101311205A (zh) 2008-11-26
JP5509114B2 (ja) 2014-06-04
JP2013149992A (ja) 2013-08-01
WO2006009160A1 (ja) 2006-01-26
CN102585765B (zh) 2015-01-21
EP1796152B1 (en) 2019-02-27
KR20070026843A (ko) 2007-03-08

Similar Documents

Publication Publication Date Title
TWI287040B (en) CMP slurry and polishing method for substrate
KR100849551B1 (ko) Сｍｐ연마제 및 기판의 연마방법
JP5110058B2 (ja) Ｃｍｐ研磨剤及び研磨方法
JP5176154B2 (ja) Ｃｍｐ研磨剤及び基板の研磨方法
JP5510575B2 (ja) 研磨液及びこの研磨液を用いた基板の研磨方法
CN101375376B (zh) 绝缘膜研磨用cmp研磨剂、研磨方法、通过该研磨方法研磨的半导体电子部件
JP2010095650A (ja) 研磨剤組成物及びこの研磨剤組成物を用いた基板の研磨方法
JP2006179678A (ja) 半導体絶縁膜用ｃｍｐ研磨剤及び基板の研磨方法
CN101511538A (zh) Cmp研磨剂、cmp研磨剂用添加液以及使用了这些的基板的研磨方法
JP2006041033A (ja) Ｃｍｐ研磨剤及び基板の研磨方法
JP2006041034A (ja) Ｃｍｐ研磨剤及び基板の研磨方法
JP2006036963A (ja) Ｃｍｐ研磨剤及び基板の研磨方法
JP2011233748A (ja) 基板の研磨方法

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent