KR100849254B1 - 기판처리방법 및 기판처리장치 - Google Patents

기판처리방법 및 기판처리장치 Download PDF

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Publication number
KR100849254B1
KR100849254B1 KR1020010060911A KR20010060911A KR100849254B1 KR 100849254 B1 KR100849254 B1 KR 100849254B1 KR 1020010060911 A KR1020010060911 A KR 1020010060911A KR 20010060911 A KR20010060911 A KR 20010060911A KR 100849254 B1 KR100849254 B1 KR 100849254B1
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South Korea
Prior art keywords
ozone gas
gas
processing
substrate
supplying
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Expired - Fee Related
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KR1020010060911A
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English (en)
Korean (ko)
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KR20020027202A (ko
Inventor
도시마다카유키
신도나오키
이이노다다시
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도쿄엘렉트론가부시키가이샤
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Publication of KR20020027202A publication Critical patent/KR20020027202A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

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  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning In General (AREA)
KR1020010060911A 2000-10-04 2001-09-29 기판처리방법 및 기판처리장치 Expired - Fee Related KR100849254B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2000-00304375 2000-10-04
JP2000304375 2000-10-04
JP2001041482A JP4014127B2 (ja) 2000-10-04 2001-02-19 基板処理方法及び基板処理装置
JPJP-P-2001-00041482 2001-02-19

Publications (2)

Publication Number Publication Date
KR20020027202A KR20020027202A (ko) 2002-04-13
KR100849254B1 true KR100849254B1 (ko) 2008-07-29

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KR1020010060911A Expired - Fee Related KR100849254B1 (ko) 2000-10-04 2001-09-29 기판처리방법 및 기판처리장치

Country Status (3)

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US (2) US6817368B2 (enExample)
JP (1) JP4014127B2 (enExample)
KR (1) KR100849254B1 (enExample)

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JP3953361B2 (ja) * 2002-05-08 2007-08-08 東京エレクトロン株式会社 基板処理装置および基板処理方法
US20040159335A1 (en) * 2002-05-17 2004-08-19 P.C.T. Systems, Inc. Method and apparatus for removing organic layers
JP3999059B2 (ja) * 2002-06-26 2007-10-31 東京エレクトロン株式会社 基板処理システム及び基板処理方法
KR100475272B1 (ko) * 2002-06-29 2005-03-10 주식회사 하이닉스반도체 반도체소자 제조방법
KR100992803B1 (ko) * 2002-07-25 2010-11-09 도쿄엘렉트론가부시키가이샤 기판 처리 용기
DE03783419T1 (de) * 2002-12-10 2005-10-13 Semitool, Inc., Kalispell Arbeitsstück-bearbeitungssystem
JP4318930B2 (ja) * 2003-02-19 2009-08-26 東京エレクトロン株式会社 基板処理方法
US20050022850A1 (en) * 2003-07-29 2005-02-03 Supercritical Systems, Inc. Regulation of flow of processing chemistry only into a processing chamber
US20050067002A1 (en) * 2003-09-25 2005-03-31 Supercritical Systems, Inc. Processing chamber including a circulation loop integrally formed in a chamber housing
KR100728547B1 (ko) 2003-12-18 2007-06-15 동경 엘렉트론 주식회사 기판 처리 방법, 기판 처리 장치 및 컴퓨터 판독가능한기록 매체
GB2411384B (en) * 2004-02-25 2006-09-06 Mark Jason Starnes Thin turntable
WO2005100637A1 (ja) * 2004-04-15 2005-10-27 Tokyo Electron Limited 液処理装置および液処理方法
JP4459774B2 (ja) 2004-10-12 2010-04-28 東京エレクトロン株式会社 基板処理方法、基板処理装置およびコンピュータプログラム
US20060102282A1 (en) * 2004-11-15 2006-05-18 Supercritical Systems, Inc. Method and apparatus for selectively filtering residue from a processing chamber
US20060128160A1 (en) * 2004-12-10 2006-06-15 Yoo Woo S Photoresist strip using solvent vapor
US7767145B2 (en) * 2005-03-28 2010-08-03 Toyko Electron Limited High pressure fourier transform infrared cell
US7380984B2 (en) 2005-03-28 2008-06-03 Tokyo Electron Limited Process flow thermocouple
US20060226117A1 (en) * 2005-03-29 2006-10-12 Bertram Ronald T Phase change based heating element system and method
US20060225772A1 (en) * 2005-03-29 2006-10-12 Jones William D Controlled pressure differential in a high-pressure processing chamber
US20060225769A1 (en) * 2005-03-30 2006-10-12 Gentaro Goshi Isothermal control of a process chamber
US7494107B2 (en) 2005-03-30 2009-02-24 Supercritical Systems, Inc. Gate valve for plus-atmospheric pressure semiconductor process vessels
JP2007165842A (ja) * 2005-11-21 2007-06-28 Dainippon Screen Mfg Co Ltd 基板処理方法及びその装置
JP4786351B2 (ja) * 2006-01-20 2011-10-05 株式会社東芝 処理装置及び処理方法
JP4901323B2 (ja) * 2006-06-20 2012-03-21 東京応化工業株式会社 基板処理装置
JP5399678B2 (ja) * 2008-10-02 2014-01-29 芝浦メカトロニクス株式会社 レジスト剥離装置
RU2548835C1 (ru) * 2013-11-01 2015-04-20 Елена Анатольевна Чекалова Способ формирования износостойкого покрытия на поверхности металлической детали
KR102720682B1 (ko) * 2017-01-16 2024-10-24 삼성디스플레이 주식회사 포토레지스트 박리 장치 및 이를 이용한 포토레지스트 박리 방법 및 박막 패턴 형성 방법
KR20200092530A (ko) * 2019-01-24 2020-08-04 삼성전자주식회사 포토레지스트 제거장치 및 이를 이용한 반도체 소자 제조방법
JP7576920B2 (ja) * 2020-03-27 2024-11-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

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KR900017094A (ko) * 1989-04-28 1990-11-15 이사다 아키라 기상표면 처리장치 및 방법
KR970077117A (ko) * 1996-05-22 1997-12-12 조셉 제이. 스위니 반도체 처리용 제어가능한 가압된 처리 챔버를 갖는 코우터
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KR900017094A (ko) * 1989-04-28 1990-11-15 이사다 아키라 기상표면 처리장치 및 방법
KR970077117A (ko) * 1996-05-22 1997-12-12 조셉 제이. 스위니 반도체 처리용 제어가능한 가압된 처리 챔버를 갖는 코우터
KR19990069185A (ko) * 1998-02-05 1999-09-06 윤종용 반도체 웨이퍼의 현상장치 및 이를 이용한 현상방법
KR19990080587A (ko) * 1998-04-18 1999-11-15 김영환 반도체 웨이퍼 제조용 식각장비의 세정장치

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Publication number Publication date
JP4014127B2 (ja) 2007-11-28
US6817368B2 (en) 2004-11-16
US7410543B2 (en) 2008-08-12
US20020045008A1 (en) 2002-04-18
JP2002184741A (ja) 2002-06-28
US20050051246A1 (en) 2005-03-10
KR20020027202A (ko) 2002-04-13

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