JP4014127B2 - 基板処理方法及び基板処理装置 - Google Patents

基板処理方法及び基板処理装置 Download PDF

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Publication number
JP4014127B2
JP4014127B2 JP2001041482A JP2001041482A JP4014127B2 JP 4014127 B2 JP4014127 B2 JP 4014127B2 JP 2001041482 A JP2001041482 A JP 2001041482A JP 2001041482 A JP2001041482 A JP 2001041482A JP 4014127 B2 JP4014127 B2 JP 4014127B2
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Japan
Prior art keywords
ozone gas
substrate
processing
gas
supplying
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2001041482A
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English (en)
Japanese (ja)
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JP2002184741A (ja
JP2002184741A5 (enExample
Inventor
孝之 戸島
尚樹 新藤
正 飯野
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Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2001041482A priority Critical patent/JP4014127B2/ja
Priority to KR1020010060911A priority patent/KR100849254B1/ko
Priority to US09/971,136 priority patent/US6817368B2/en
Publication of JP2002184741A publication Critical patent/JP2002184741A/ja
Priority to US10/957,003 priority patent/US7410543B2/en
Publication of JP2002184741A5 publication Critical patent/JP2002184741A5/ja
Application granted granted Critical
Publication of JP4014127B2 publication Critical patent/JP4014127B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

Landscapes

  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning In General (AREA)
JP2001041482A 2000-10-04 2001-02-19 基板処理方法及び基板処理装置 Expired - Fee Related JP4014127B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001041482A JP4014127B2 (ja) 2000-10-04 2001-02-19 基板処理方法及び基板処理装置
KR1020010060911A KR100849254B1 (ko) 2000-10-04 2001-09-29 기판처리방법 및 기판처리장치
US09/971,136 US6817368B2 (en) 2000-10-04 2001-10-03 Substrate processing method and substrate processing apparatus
US10/957,003 US7410543B2 (en) 2000-10-04 2004-10-01 Substrate processing method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-304375 2000-10-04
JP2000304375 2000-10-04
JP2001041482A JP4014127B2 (ja) 2000-10-04 2001-02-19 基板処理方法及び基板処理装置

Publications (3)

Publication Number Publication Date
JP2002184741A JP2002184741A (ja) 2002-06-28
JP2002184741A5 JP2002184741A5 (enExample) 2005-03-17
JP4014127B2 true JP4014127B2 (ja) 2007-11-28

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Family Applications (1)

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JP2001041482A Expired - Fee Related JP4014127B2 (ja) 2000-10-04 2001-02-19 基板処理方法及び基板処理装置

Country Status (3)

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US (2) US6817368B2 (enExample)
JP (1) JP4014127B2 (enExample)
KR (1) KR100849254B1 (enExample)

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JP4318930B2 (ja) * 2003-02-19 2009-08-26 東京エレクトロン株式会社 基板処理方法
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KR100728547B1 (ko) 2003-12-18 2007-06-15 동경 엘렉트론 주식회사 기판 처리 방법, 기판 처리 장치 및 컴퓨터 판독가능한기록 매체
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JP4459774B2 (ja) 2004-10-12 2010-04-28 東京エレクトロン株式会社 基板処理方法、基板処理装置およびコンピュータプログラム
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US20060226117A1 (en) * 2005-03-29 2006-10-12 Bertram Ronald T Phase change based heating element system and method
US20060225772A1 (en) * 2005-03-29 2006-10-12 Jones William D Controlled pressure differential in a high-pressure processing chamber
US20060225769A1 (en) * 2005-03-30 2006-10-12 Gentaro Goshi Isothermal control of a process chamber
US7494107B2 (en) 2005-03-30 2009-02-24 Supercritical Systems, Inc. Gate valve for plus-atmospheric pressure semiconductor process vessels
JP2007165842A (ja) * 2005-11-21 2007-06-28 Dainippon Screen Mfg Co Ltd 基板処理方法及びその装置
JP4786351B2 (ja) * 2006-01-20 2011-10-05 株式会社東芝 処理装置及び処理方法
JP4901323B2 (ja) * 2006-06-20 2012-03-21 東京応化工業株式会社 基板処理装置
JP5399678B2 (ja) * 2008-10-02 2014-01-29 芝浦メカトロニクス株式会社 レジスト剥離装置
RU2548835C1 (ru) * 2013-11-01 2015-04-20 Елена Анатольевна Чекалова Способ формирования износостойкого покрытия на поверхности металлической детали
KR102720682B1 (ko) * 2017-01-16 2024-10-24 삼성디스플레이 주식회사 포토레지스트 박리 장치 및 이를 이용한 포토레지스트 박리 방법 및 박막 패턴 형성 방법
KR20200092530A (ko) * 2019-01-24 2020-08-04 삼성전자주식회사 포토레지스트 제거장치 및 이를 이용한 반도체 소자 제조방법
JP7576920B2 (ja) * 2020-03-27 2024-11-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

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Also Published As

Publication number Publication date
US6817368B2 (en) 2004-11-16
US7410543B2 (en) 2008-08-12
US20020045008A1 (en) 2002-04-18
JP2002184741A (ja) 2002-06-28
US20050051246A1 (en) 2005-03-10
KR100849254B1 (ko) 2008-07-29
KR20020027202A (ko) 2002-04-13

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