WO2005100637A1 - 液処理装置および液処理方法 - Google Patents
液処理装置および液処理方法 Download PDFInfo
- Publication number
- WO2005100637A1 WO2005100637A1 PCT/JP2005/006120 JP2005006120W WO2005100637A1 WO 2005100637 A1 WO2005100637 A1 WO 2005100637A1 JP 2005006120 W JP2005006120 W JP 2005006120W WO 2005100637 A1 WO2005100637 A1 WO 2005100637A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- processing
- liquid
- liquid supply
- processing liquid
- nozzles
- Prior art date
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 519
- 238000011282 treatment Methods 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims abstract description 79
- 239000000126 substance Substances 0.000 claims abstract description 102
- 238000007599 discharging Methods 0.000 claims abstract description 13
- 238000012545 processing Methods 0.000 claims description 446
- 230000008569 process Effects 0.000 claims description 68
- 238000003672 processing method Methods 0.000 claims description 20
- 238000010129 solution processing Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 235000012431 wafers Nutrition 0.000 description 52
- 239000000243 solution Substances 0.000 description 46
- 238000005530 etching Methods 0.000 description 35
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 21
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 15
- 238000004140 cleaning Methods 0.000 description 10
- 238000012993 chemical processing Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000012487 rinsing solution Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05727891A EP1736568A4 (en) | 2004-04-15 | 2005-03-30 | LIQUID TREATMENT DEVICE AND LIQUID TREATMENT PROCESS |
US10/540,762 US20060060232A1 (en) | 2004-04-15 | 2005-03-30 | Liquid treatment device and liquid treatment method |
JP2006512292A JP4403177B2 (ja) | 2004-04-15 | 2005-03-30 | 液処理装置および液処理方法 |
CN2005800113530A CN1942606B (zh) | 2004-04-15 | 2005-03-30 | 液体处理装置和液体处理方法 |
US12/403,286 US8652344B2 (en) | 2004-04-15 | 2009-03-12 | Liquid treatment method and storage system |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004-119810 | 2004-04-15 | ||
JP2004119810 | 2004-04-15 | ||
JP2004219500 | 2004-07-28 | ||
JP2004-219500 | 2004-07-28 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/540,762 A-371-Of-International US20060060232A1 (en) | 2004-04-15 | 2005-03-30 | Liquid treatment device and liquid treatment method |
US12/403,286 Division US8652344B2 (en) | 2004-04-15 | 2009-03-12 | Liquid treatment method and storage system |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005100637A1 true WO2005100637A1 (ja) | 2005-10-27 |
Family
ID=35150024
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2005/006120 WO2005100637A1 (ja) | 2004-04-15 | 2005-03-30 | 液処理装置および液処理方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US20060060232A1 (ja) |
EP (1) | EP1736568A4 (ja) |
JP (1) | JP4403177B2 (ja) |
KR (1) | KR100780789B1 (ja) |
CN (1) | CN1942606B (ja) |
TW (1) | TWI278029B (ja) |
WO (1) | WO2005100637A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007311631A (ja) * | 2006-05-19 | 2007-11-29 | Tokyo Electron Ltd | 基板洗浄方法、基板洗浄装置、プログラム、および記録媒体 |
JP2011187891A (ja) * | 2010-03-11 | 2011-09-22 | Tokyo Electron Ltd | 液処理装置、液処理方法、プログラムおよびプログラム記録媒体 |
US8216417B2 (en) | 2008-03-27 | 2012-07-10 | Dainippon Screen Mfg. Co., Ltd. | Substrate treating apparatus and substrate treating method |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1736568A4 (en) * | 2004-04-15 | 2011-01-12 | Tokyo Electron Ltd | LIQUID TREATMENT DEVICE AND LIQUID TREATMENT PROCESS |
JP4542869B2 (ja) * | 2004-10-19 | 2010-09-15 | 東京エレクトロン株式会社 | 処理方法およびその処理方法を実施するコンピュータプログラム |
JP4907400B2 (ja) * | 2006-07-25 | 2012-03-28 | 大日本スクリーン製造株式会社 | 基板処理装置及び基板処理方法 |
DE102006059810A1 (de) * | 2006-12-15 | 2008-06-19 | Rena Sondermaschinen Gmbh | Vorrichtung und Verfahren zum Reinigen von Gegenständen, insbesondere von dünnen Scheiben |
KR101177038B1 (ko) * | 2007-12-10 | 2012-08-27 | 레나 게엠베하 | 물품의 세정 장치 및 방법 |
JP5148465B2 (ja) * | 2008-12-08 | 2013-02-20 | 東京エレクトロン株式会社 | 液処理方法、液処理装置および記憶媒体 |
JP5323898B2 (ja) * | 2011-08-01 | 2013-10-23 | シャープ株式会社 | 液体吐出ノズル、及び液体吐出ノズルにおける撥水層の再生方法 |
KR101774185B1 (ko) * | 2013-09-25 | 2017-09-01 | 시바우라 메카트로닉스 가부시끼가이샤 | 기판 처리 장치, 접합 기판의 박리 방법 및 접착제의 제거 방법 |
CN104014496A (zh) * | 2014-06-04 | 2014-09-03 | 深圳市华星光电技术有限公司 | 水洗腔室的排液方法及装置 |
DE102014016364A1 (de) * | 2014-11-05 | 2016-05-12 | Eisenmann Se | Reinigungsverfahren und Reinigungsvorrichtung für ein oder mehrere Teile eines Applikationssystems |
JP6231249B2 (ja) * | 2015-06-15 | 2017-11-15 | 株式会社ジェイ・イー・ティ | 基板処理装置 |
JP6509104B2 (ja) * | 2015-09-30 | 2019-05-08 | 東京エレクトロン株式会社 | 基板液処理装置 |
US11220758B2 (en) * | 2016-06-15 | 2022-01-11 | Seoul Viosys Co., Ltd. | Systems and methods for thermal hydro-synthesis of semiconductor materials by holding a substrate wafer within a chamber in a vertical direction |
TWI597799B (zh) * | 2016-10-14 | 2017-09-01 | 盟立自動化股份有限公司 | 溼式製程設備 |
JP6985957B2 (ja) | 2018-02-21 | 2021-12-22 | キオクシア株式会社 | 半導体処理装置 |
JP7101083B2 (ja) * | 2018-08-23 | 2022-07-14 | 東京エレクトロン株式会社 | 基板液処理装置、基板液処理方法および記憶媒体 |
CN111785623B (zh) * | 2020-06-15 | 2022-11-04 | 上海华虹宏力半导体制造有限公司 | 湿法刻蚀方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10335295A (ja) * | 1997-06-05 | 1998-12-18 | Dainippon Screen Mfg Co Ltd | 基板処理槽および基板処理装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4985111A (en) * | 1990-03-02 | 1991-01-15 | Chemcut Corporation | Process and apparatus for intermittent fluid application |
JP2739419B2 (ja) | 1992-09-25 | 1998-04-15 | 大日本スクリーン製造株式会社 | 基板処理装置 |
US5625433A (en) * | 1994-09-29 | 1997-04-29 | Tokyo Electron Limited | Apparatus and method for developing resist coated on a substrate |
JPH09199467A (ja) * | 1996-01-17 | 1997-07-31 | Mitsubishi Electric Corp | 洗浄装置及びその方法 |
US5922138A (en) * | 1996-08-12 | 1999-07-13 | Tokyo Electron Limited | Liquid treatment method and apparatus |
JPH10229065A (ja) | 1997-02-14 | 1998-08-25 | Sony Corp | 洗浄槽および洗浄方法 |
DE10036867B4 (de) * | 1999-07-30 | 2006-04-13 | Tokyo Electron Ltd. | Substrat-Bearbeitungsverfahren und -vorrichtung |
US6616014B1 (en) * | 2000-02-25 | 2003-09-09 | The Boc Group, Inc. | Precision liquid mixing apparatus and method |
JP3851486B2 (ja) * | 2000-03-27 | 2006-11-29 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
JP3662484B2 (ja) * | 2000-08-09 | 2005-06-22 | エム・エフエスアイ株式会社 | ウェット処理方法及びウェット処理装置 |
JP4014127B2 (ja) * | 2000-10-04 | 2007-11-28 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
JP3681329B2 (ja) * | 2000-10-20 | 2005-08-10 | 東京エレクトロン株式会社 | 基板表面処理方法及び基板表面処理装置 |
JP2002353184A (ja) * | 2001-05-28 | 2002-12-06 | Tokyo Electron Ltd | 基板処理方法及び基板処理装置 |
JP3953361B2 (ja) * | 2002-05-08 | 2007-08-08 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
EP1736568A4 (en) * | 2004-04-15 | 2011-01-12 | Tokyo Electron Ltd | LIQUID TREATMENT DEVICE AND LIQUID TREATMENT PROCESS |
-
2005
- 2005-03-30 EP EP05727891A patent/EP1736568A4/en not_active Withdrawn
- 2005-03-30 CN CN2005800113530A patent/CN1942606B/zh active Active
- 2005-03-30 KR KR1020067004349A patent/KR100780789B1/ko active IP Right Grant
- 2005-03-30 WO PCT/JP2005/006120 patent/WO2005100637A1/ja not_active Application Discontinuation
- 2005-03-30 US US10/540,762 patent/US20060060232A1/en not_active Abandoned
- 2005-03-30 JP JP2006512292A patent/JP4403177B2/ja not_active Expired - Fee Related
- 2005-04-14 TW TW094111900A patent/TWI278029B/zh active
-
2009
- 2009-03-12 US US12/403,286 patent/US8652344B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10335295A (ja) * | 1997-06-05 | 1998-12-18 | Dainippon Screen Mfg Co Ltd | 基板処理槽および基板処理装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007311631A (ja) * | 2006-05-19 | 2007-11-29 | Tokyo Electron Ltd | 基板洗浄方法、基板洗浄装置、プログラム、および記録媒体 |
JP4705517B2 (ja) * | 2006-05-19 | 2011-06-22 | 東京エレクトロン株式会社 | 基板洗浄方法、基板洗浄装置、プログラム、および記録媒体 |
US8216417B2 (en) | 2008-03-27 | 2012-07-10 | Dainippon Screen Mfg. Co., Ltd. | Substrate treating apparatus and substrate treating method |
JP2011187891A (ja) * | 2010-03-11 | 2011-09-22 | Tokyo Electron Ltd | 液処理装置、液処理方法、プログラムおよびプログラム記録媒体 |
Also Published As
Publication number | Publication date |
---|---|
KR100780789B1 (ko) | 2007-11-30 |
US20090179007A1 (en) | 2009-07-16 |
CN1942606A (zh) | 2007-04-04 |
EP1736568A1 (en) | 2006-12-27 |
US20060060232A1 (en) | 2006-03-23 |
US8652344B2 (en) | 2014-02-18 |
TWI278029B (en) | 2007-04-01 |
EP1736568A4 (en) | 2011-01-12 |
JPWO2005100637A1 (ja) | 2008-03-06 |
CN1942606B (zh) | 2011-12-14 |
KR20060064066A (ko) | 2006-06-12 |
TW200537616A (en) | 2005-11-16 |
JP4403177B2 (ja) | 2010-01-20 |
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