KR100813821B1 - 반도체 패키지 및 이의 제조방법 - Google Patents

반도체 패키지 및 이의 제조방법 Download PDF

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Publication number
KR100813821B1
KR100813821B1 KR1020037010941A KR20037010941A KR100813821B1 KR 100813821 B1 KR100813821 B1 KR 100813821B1 KR 1020037010941 A KR1020037010941 A KR 1020037010941A KR 20037010941 A KR20037010941 A KR 20037010941A KR 100813821 B1 KR100813821 B1 KR 100813821B1
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South Korea
Prior art keywords
film
wafer
sio
silicon
component
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Expired - Lifetime
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KR1020037010941A
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English (en)
Korean (ko)
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KR20030080012A (ko
Inventor
벡커그레고리
가드너제프리
하크니스브라이언
말렌판트루이즈
사마사티엔드라
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다우 코닝 코포레이션
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0012Processes making use of the tackiness of the photolithographic materials, e.g. for mounting; Packaging for photolithographic material; Packages obtained by processing photolithographic materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Paints Or Removers (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
KR1020037010941A 2001-02-20 2002-01-17 반도체 패키지 및 이의 제조방법 Expired - Lifetime KR100813821B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/789,083 2001-02-20
US09/789,083 US6617674B2 (en) 2001-02-20 2001-02-20 Semiconductor package and method of preparing same
PCT/US2002/001263 WO2002067292A2 (en) 2001-02-20 2002-01-17 Semiconductor package and method of preparing same

Publications (2)

Publication Number Publication Date
KR20030080012A KR20030080012A (ko) 2003-10-10
KR100813821B1 true KR100813821B1 (ko) 2008-03-17

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KR1020037010941A Expired - Lifetime KR100813821B1 (ko) 2001-02-20 2002-01-17 반도체 패키지 및 이의 제조방법

Country Status (11)

Country Link
US (1) US6617674B2 (https=)
EP (1) EP1362364B1 (https=)
JP (1) JP4226905B2 (https=)
KR (1) KR100813821B1 (https=)
CN (3) CN101581880B (https=)
AT (1) ATE494629T1 (https=)
AU (1) AU2002248357A1 (https=)
CA (1) CA2438126A1 (https=)
DE (1) DE60238823D1 (https=)
TW (1) TW563210B (https=)
WO (2) WO2002067292A2 (https=)

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JP3910908B2 (ja) * 2002-10-29 2007-04-25 新光電気工業株式会社 半導体装置用基板及びこの製造方法、並びに半導体装置
JP3910907B2 (ja) * 2002-10-29 2007-04-25 新光電気工業株式会社 キャパシタ素子及びこの製造方法、半導体装置用基板、並びに半導体装置
US7145229B2 (en) * 2002-11-14 2006-12-05 The Regents Of The University Of California Silicone metalization
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JP4308821B2 (ja) * 2003-07-28 2009-08-05 ダウ・コーニング・コーポレイション パターン形成されたシリコーン層をエッチングする方法
CN100540275C (zh) * 2003-11-17 2009-09-16 陶氏康宁公司 固化有机硅树脂基底的压花方法
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KR100647483B1 (ko) * 2005-08-19 2006-11-23 삼성전자주식회사 반도체 패키지의 배선 구조물 및 이의 제조 방법, 이를이용한 웨이퍼 레벨 패키지 및 이의 제조 방법
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Also Published As

Publication number Publication date
ATE494629T1 (de) 2011-01-15
WO2002067292A2 (en) 2002-08-29
US20020158317A1 (en) 2002-10-31
TW563210B (en) 2003-11-21
AU2002248357A1 (en) 2002-09-04
CN1514954A (zh) 2004-07-21
DE60238823D1 (de) 2011-02-17
US6617674B2 (en) 2003-09-09
KR20030080012A (ko) 2003-10-10
EP1362364A2 (en) 2003-11-19
JP2004530288A (ja) 2004-09-30
CN101581880A (zh) 2009-11-18
JP4226905B2 (ja) 2009-02-18
WO2005017627A1 (en) 2005-02-24
WO2002067292A3 (en) 2002-12-19
CA2438126A1 (en) 2002-08-29
EP1362364B1 (en) 2011-01-05
CN101581880B (zh) 2011-12-14
CN1820230A (zh) 2006-08-16

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