AU2002248357A1 - Semiconductor package and method of preparing same - Google Patents

Semiconductor package and method of preparing same

Info

Publication number
AU2002248357A1
AU2002248357A1 AU2002248357A AU2002248357A AU2002248357A1 AU 2002248357 A1 AU2002248357 A1 AU 2002248357A1 AU 2002248357 A AU2002248357 A AU 2002248357A AU 2002248357 A AU2002248357 A AU 2002248357A AU 2002248357 A1 AU2002248357 A1 AU 2002248357A1
Authority
AU
Australia
Prior art keywords
semiconductor package
preparing same
silicone layer
wafer
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002248357A
Other languages
English (en)
Inventor
Gregory Becker
Geoffrey Gardner
Brian Harkness
Louise Malenfant
Satyendra Sarmah
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of AU2002248357A1 publication Critical patent/AU2002248357A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0012Processes making use of the tackiness of the photolithographic materials, e.g. for mounting; Packaging for photolithographic material; Packages obtained by processing photolithographic materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Paints Or Removers (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
AU2002248357A 2001-02-20 2002-01-17 Semiconductor package and method of preparing same Abandoned AU2002248357A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/789,083 2001-02-20
US09/789,083 US6617674B2 (en) 2001-02-20 2001-02-20 Semiconductor package and method of preparing same
PCT/US2002/001263 WO2002067292A2 (en) 2001-02-20 2002-01-17 Semiconductor package and method of preparing same

Publications (1)

Publication Number Publication Date
AU2002248357A1 true AU2002248357A1 (en) 2002-09-04

Family

ID=25146536

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002248357A Abandoned AU2002248357A1 (en) 2001-02-20 2002-01-17 Semiconductor package and method of preparing same

Country Status (11)

Country Link
US (1) US6617674B2 (https=)
EP (1) EP1362364B1 (https=)
JP (1) JP4226905B2 (https=)
KR (1) KR100813821B1 (https=)
CN (3) CN101581880B (https=)
AT (1) ATE494629T1 (https=)
AU (1) AU2002248357A1 (https=)
CA (1) CA2438126A1 (https=)
DE (1) DE60238823D1 (https=)
TW (1) TW563210B (https=)
WO (2) WO2002067292A2 (https=)

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CN101223476B (zh) * 2005-06-02 2011-11-16 道康宁公司 纳米图案形成方法,其中所使用的固化抗蚀剂膜和包含该抗蚀剂膜的制品
EP1893671B1 (en) * 2005-06-14 2009-12-23 Dow Corning Corporation Reinforced silicone resin film and method of preparing same
WO2007018756A1 (en) 2005-08-04 2007-02-15 Dow Corning Corporation Reinforced silicone resin film and method of preparing same
KR100647483B1 (ko) * 2005-08-19 2006-11-23 삼성전자주식회사 반도체 패키지의 배선 구조물 및 이의 제조 방법, 이를이용한 웨이퍼 레벨 패키지 및 이의 제조 방법
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US8084532B2 (en) 2006-01-19 2011-12-27 Dow Corning Corporation Silicone resin film, method of preparing same, and nanomaterial-filled silicone composition
JP5178532B2 (ja) * 2006-02-02 2013-04-10 ダウ・コーニング・コーポレイション シリコーン樹脂フィルム、その調製方法、およびナノ材料充填シリコーン組成物
US7449785B2 (en) * 2006-02-06 2008-11-11 Taiwan Semiconductor Manufacturing Co., Ltd. Solder bump on a semiconductor substrate
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US7538021B2 (en) * 2006-09-20 2009-05-26 Intel Corporation Removing dry film resist residues using hydrolyzable membranes
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WO2008103226A1 (en) 2007-02-22 2008-08-28 Dow Corning Corporation Reinforced silicone resin films
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US7834449B2 (en) * 2007-04-30 2010-11-16 Broadcom Corporation Highly reliable low cost structure for wafer-level ball grid array packaging
US20100143686A1 (en) * 2007-05-01 2010-06-10 Bizhong Zhu Nanomaterial-Filled Silicone Composition and Reinforced Silicone Resin Film
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US20100264522A1 (en) * 2009-04-20 2010-10-21 Chien-Pin Chen Semiconductor device having at least one bump without overlapping specific pad or directly contacting specific pad
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Also Published As

Publication number Publication date
ATE494629T1 (de) 2011-01-15
WO2002067292A2 (en) 2002-08-29
US20020158317A1 (en) 2002-10-31
TW563210B (en) 2003-11-21
CN1514954A (zh) 2004-07-21
DE60238823D1 (de) 2011-02-17
US6617674B2 (en) 2003-09-09
KR20030080012A (ko) 2003-10-10
EP1362364A2 (en) 2003-11-19
JP2004530288A (ja) 2004-09-30
CN101581880A (zh) 2009-11-18
JP4226905B2 (ja) 2009-02-18
WO2005017627A1 (en) 2005-02-24
WO2002067292A3 (en) 2002-12-19
CA2438126A1 (en) 2002-08-29
EP1362364B1 (en) 2011-01-05
CN101581880B (zh) 2011-12-14
KR100813821B1 (ko) 2008-03-17
CN1820230A (zh) 2006-08-16

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase