JP4226905B2 - 半導体パッケージおよびその調製方法 - Google Patents

半導体パッケージおよびその調製方法 Download PDF

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Publication number
JP4226905B2
JP4226905B2 JP2002566524A JP2002566524A JP4226905B2 JP 4226905 B2 JP4226905 B2 JP 4226905B2 JP 2002566524 A JP2002566524 A JP 2002566524A JP 2002566524 A JP2002566524 A JP 2002566524A JP 4226905 B2 JP4226905 B2 JP 4226905B2
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JP
Japan
Prior art keywords
film
wafer
sio
platinum
silicone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2002566524A
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English (en)
Japanese (ja)
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JP2004530288A (ja
JP2004530288A5 (https=
Inventor
ベッカー、グレゴリー
ガードナー、ジェフリー
ハークネス、ブライアン
メレンファント、ルイス
サーマ、サティエンドラ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Dow Silicones Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp, Dow Silicones Corp filed Critical Dow Corning Corp
Publication of JP2004530288A publication Critical patent/JP2004530288A/ja
Publication of JP2004530288A5 publication Critical patent/JP2004530288A5/ja
Application granted granted Critical
Publication of JP4226905B2 publication Critical patent/JP4226905B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0012—Processes making use of the tackiness of the photolithographic materials, e.g. for mounting; Packaging for photolithographic material; Packages obtained by processing photolithographic materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Paints Or Removers (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2002566524A 2001-02-20 2002-01-17 半導体パッケージおよびその調製方法 Expired - Lifetime JP4226905B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/789,083 US6617674B2 (en) 2001-02-20 2001-02-20 Semiconductor package and method of preparing same
PCT/US2002/001263 WO2002067292A2 (en) 2001-02-20 2002-01-17 Semiconductor package and method of preparing same

Publications (3)

Publication Number Publication Date
JP2004530288A JP2004530288A (ja) 2004-09-30
JP2004530288A5 JP2004530288A5 (https=) 2008-06-05
JP4226905B2 true JP4226905B2 (ja) 2009-02-18

Family

ID=25146536

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002566524A Expired - Lifetime JP4226905B2 (ja) 2001-02-20 2002-01-17 半導体パッケージおよびその調製方法

Country Status (11)

Country Link
US (1) US6617674B2 (https=)
EP (1) EP1362364B1 (https=)
JP (1) JP4226905B2 (https=)
KR (1) KR100813821B1 (https=)
CN (3) CN1514954A (https=)
AT (1) ATE494629T1 (https=)
AU (1) AU2002248357A1 (https=)
CA (1) CA2438126A1 (https=)
DE (1) DE60238823D1 (https=)
TW (1) TW563210B (https=)
WO (2) WO2002067292A2 (https=)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6617674B2 (en) * 2001-02-20 2003-09-09 Dow Corning Corporation Semiconductor package and method of preparing same
DE10144467B4 (de) * 2001-09-10 2006-07-27 Infineon Technologies Ag Elektronisches Sensorbauteil und Verfahren zu seiner Herstellung
US6836023B2 (en) * 2002-04-17 2004-12-28 Fairchild Semiconductor Corporation Structure of integrated trace of chip package
US6905904B2 (en) * 2002-06-24 2005-06-14 Dow Corning Corporation Planar optical waveguide assembly and method of preparing same
US6907176B2 (en) * 2002-06-24 2005-06-14 Dow Corning Corporation Planar optical waveguide assembly and method of preparing same
JP3910907B2 (ja) * 2002-10-29 2007-04-25 新光電気工業株式会社 キャパシタ素子及びこの製造方法、半導体装置用基板、並びに半導体装置
JP3910908B2 (ja) * 2002-10-29 2007-04-25 新光電気工業株式会社 半導体装置用基板及びこの製造方法、並びに半導体装置
US7145229B2 (en) * 2002-11-14 2006-12-05 The Regents Of The University Of California Silicone metalization
US20040102022A1 (en) * 2002-11-22 2004-05-27 Tongbi Jiang Methods of fabricating integrated circuitry
EP1636653B1 (en) * 2003-06-23 2011-12-28 Dow Corning Corporation Adhesion method using gray-scale photolithography
KR100949053B1 (ko) * 2003-07-28 2010-03-25 다우 코닝 코포레이션 패턴 형성된 실리콘 층의 에칭방법
WO2005051636A1 (en) * 2003-11-17 2005-06-09 Dow Corning Corporation Method of embossing cured silicone resin substrates
DE102004005562A1 (de) * 2004-02-03 2005-08-25 Kettenbach Gmbh & Co. Kg Über Hydrosilylierungs-Reaktion additionsvernetzende Zweikomponenten-Dentalmaterial mit starren und/oder voluminösen Gruppen sowie mit hoher Biegefestigkeit und E-Modul
US7208344B2 (en) * 2004-03-31 2007-04-24 Aptos Corporation Wafer level mounting frame for ball grid array packaging, and method of making and using the same
DE102004036573A1 (de) * 2004-07-28 2006-03-23 Ge Bayer Silicones Gmbh & Co. Kg Verwendung lichtaktivierbarer, härtbarer Silikonzusammensetzungen zur Herstellung von dickwandigen Formartikeln oder dickwandigen Beschichtungen
CA2575238C (en) 2004-08-11 2015-04-21 Dow Corning Corporation Photopolymerizable silicone materials forming semipermeable membranes for sensor applications
EP1819775B1 (en) * 2004-11-19 2008-09-24 Dow Corning Corporation Organohydrogenpoly siloxane resin and silicon composition
US8092910B2 (en) * 2005-02-16 2012-01-10 Dow Corning Toray Co., Ltd. Reinforced silicone resin film and method of preparing same
JP5241242B2 (ja) * 2005-02-16 2013-07-17 ダウ・コーニング・コーポレイション 強化シリコーン樹脂フィルムおよびその製造方法
WO2006093639A1 (en) * 2005-03-01 2006-09-08 Dow Corning Corporation Temporary wafer bonding method for semiconductor processing
JP2006303452A (ja) * 2005-03-25 2006-11-02 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP4055015B2 (ja) * 2005-04-04 2008-03-05 セイコーエプソン株式会社 半導体装置の製造方法
WO2006132672A2 (en) * 2005-06-02 2006-12-14 Dow Corning Corporation A method of nanopatterning, a cured resist film use therein, and an article including the resist film
US7799842B2 (en) * 2005-06-14 2010-09-21 Dow Corning Corporation Reinforced silicone resin film and method of preparing same
JP2009503230A (ja) 2005-08-04 2009-01-29 ダウ・コーニング・コーポレイション 強化シリコーン樹脂フィルムおよびその製造方法
KR100647483B1 (ko) * 2005-08-19 2006-11-23 삼성전자주식회사 반도체 패키지의 배선 구조물 및 이의 제조 방법, 이를이용한 웨이퍼 레벨 패키지 및 이의 제조 방법
CN101356237B (zh) 2005-12-21 2011-06-29 陶氏康宁公司 有机硅树脂膜，其制备方法和纳米材料填充的有机硅组合物
KR101426316B1 (ko) 2006-01-19 2014-08-06 다우 코닝 코포레이션 실리콘 수지 필름, 이의 제조방법, 및 나노물질로 충전된실리콘 조성물
WO2007092118A2 (en) * 2006-02-02 2007-08-16 Dow Corning Corporation Silicone resin film, method of preparing same, and nanomaterial-filled silicone composition
US7449785B2 (en) * 2006-02-06 2008-11-11 Taiwan Semiconductor Manufacturing Co., Ltd. Solder bump on a semiconductor substrate
US8084097B2 (en) * 2006-02-20 2011-12-27 Dow Corning Corporation Silicone resin film, method of preparing same, and nanomaterial-filled silicone composition
JP2007258317A (ja) * 2006-03-22 2007-10-04 Shin Etsu Chem Co Ltd 半導体装置の製造方法
JP2007266191A (ja) * 2006-03-28 2007-10-11 Nec Electronics Corp ウェハ処理方法
US8795560B2 (en) * 2006-04-11 2014-08-05 Dow Corning Corporation Low thermal distortion silicone composite molds
EP2024998A1 (en) * 2006-06-05 2009-02-18 Dow Corning Corporation Electronic package and method of preparing same
MY153136A (en) * 2006-08-14 2014-12-31 Dow Corning Method of preparing a patterned film with a developing solvent
US7538021B2 (en) * 2006-09-20 2009-05-26 Intel Corporation Removing dry film resist residues using hydrolyzable membranes
SG175559A1 (en) * 2006-09-25 2011-11-28 Advanced Tech Materials Compositions and methods for the removal of photoresist for a wafer rework application
JP5377334B2 (ja) 2007-02-22 2013-12-25 ダウ コーニング コーポレーション 強化シリコーン樹脂フィルム
CN101626893B (zh) 2007-02-22 2013-07-03 道康宁公司 增强硅树脂膜
US7834449B2 (en) * 2007-04-30 2010-11-16 Broadcom Corporation Highly reliable low cost structure for wafer-level ball grid array packaging
EP2142588A1 (en) * 2007-05-01 2010-01-13 Dow Corning Corporation Nanomaterial-filled silicone composition and reinforced silicone resin film
US7872347B2 (en) * 2007-08-09 2011-01-18 Broadcom Corporation Larger than die size wafer-level redistribution packaging process
US8017246B2 (en) * 2007-11-08 2011-09-13 Philips Lumileds Lighting Company, Llc Silicone resin for protecting a light transmitting surface of an optoelectronic device
US20100264522A1 (en) * 2009-04-20 2010-10-21 Chien-Pin Chen Semiconductor device having at least one bump without overlapping specific pad or directly contacting specific pad
US8643164B2 (en) * 2009-06-11 2014-02-04 Broadcom Corporation Package-on-package technology for fan-out wafer-level packaging
KR20120132624A (ko) 2010-02-12 2012-12-06 다우 코닝 코포레이션 반도체 가공을 위한 임시 웨이퍼 접합 방법
DE102010043149A1 (de) * 2010-10-29 2012-05-03 Wacker Chemie Ag Hochtransparente durch Licht vernetzbare Siliconmischungen
ES2552695T3 (es) 2012-08-06 2015-12-01 Unilin Bvba Método para fabricar paneles con una superficie decorativa
ES2762235T3 (es) 2014-02-06 2020-05-22 Unilin Bvba Procedimiento de fabricación de paneles de piso que tienen una superficie decorativa
TW201601358A (zh) * 2014-06-19 2016-01-01 道康寧公司 用於晶圓級ｚ軸熱中介層的可光圖案化聚矽氧
WO2016126438A1 (en) 2015-02-03 2016-08-11 Dow Corning Corporation Curable silicone formulations and related cured products, methods, articles, and devices
TWI678551B (zh) 2015-07-28 2019-12-01 美商道康寧公司 智慧型光學材料、配方、方法、用途、物品、及裝置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1369989A (en) 1970-11-27 1974-10-09 Dow Corning Ltd Organopolysiloxane elastomers
US3723497A (en) 1971-11-19 1973-03-27 Dow Corning Silicone compositions catalyzed with platinum ii diacetylacetonate
US4064027A (en) 1973-09-28 1977-12-20 Dow Corning Corporation UV curable composition
DE2736499C2 (de) 1977-08-12 1990-03-29 Wacker-Chemie GmbH, 8000 München Verfahren zum Herstellen von klebrige Stoffe abweisenden Überzügen
JPS5987840A (ja) 1982-11-10 1984-05-21 Toray Silicone Co Ltd 半導体装置
FR2597110A1 (fr) * 1986-04-14 1987-10-16 Rhone Poulenc Multi Tech Composition organopolysiloxane, potentiellement reticulable et utilisable notamment en microlithographie, et son procede d'application
US5045918A (en) 1986-12-19 1991-09-03 North American Philips Corp. Semiconductor device with reduced packaging stress
US5171716A (en) 1986-12-19 1992-12-15 North American Philips Corp. Method of manufacturing semiconductor device with reduced packaging stress
US5145886A (en) 1988-05-19 1992-09-08 Minnesota Mining And Manufacturing Company Radiation activated hydrosilation reaction
US5091103A (en) * 1990-05-01 1992-02-25 Alicia Dean Photoresist stripper
DE69131658T2 (de) 1990-06-25 2000-04-27 Matsushita Electronics Corp., Kadoma Licht- oder strahlungsempfindliche Zusammensetzung
US5679977A (en) * 1990-09-24 1997-10-21 Tessera, Inc. Semiconductor chip assemblies, methods of making same and components for same
US5678301A (en) * 1991-06-04 1997-10-21 Micron Technology, Inc. Method for forming an interconnect for testing unpackaged semiconductor dice
US5290397A (en) * 1992-08-21 1994-03-01 Cornell Research Foundation, Inc. Bilayer resist and process for preparing same
US5854302A (en) * 1993-04-29 1998-12-29 The Dow Chemical Company Partially polymerized divinylsiloxane linked bisbenzocyclobutene resins and methods for making said resins
US5834339A (en) * 1996-03-07 1998-11-10 Tessera, Inc. Methods for providing void-free layers for semiconductor assemblies
US6284563B1 (en) 1995-10-31 2001-09-04 Tessera, Inc. Method of making compliant microelectronic assemblies
US6211572B1 (en) * 1995-10-31 2001-04-03 Tessera, Inc. Semiconductor chip package with fan-in leads
CN1178230A (zh) * 1996-07-30 1998-04-08 日本化药株式会社 半导体封装用环氧树脂液体组合物
JP3639088B2 (ja) * 1997-06-06 2005-04-13 株式会社ルネサステクノロジ 半導体装置及び配線テープ
CN1244038A (zh) * 1998-08-04 2000-02-09 长兴化学工业股份有限公司 半导体封装用树脂组合物
US6103552A (en) 1998-08-10 2000-08-15 Lin; Mou-Shiung Wafer scale packaging scheme
JP4174174B2 (ja) * 2000-09-19 2008-10-29 株式会社ルネサステクノロジ 半導体装置およびその製造方法並びに半導体装置実装構造体
US6617674B2 (en) * 2001-02-20 2003-09-09 Dow Corning Corporation Semiconductor package and method of preparing same

Also Published As

Publication number Publication date
KR100813821B1 (ko) 2008-03-17
WO2002067292A2 (en) 2002-08-29
EP1362364B1 (en) 2011-01-05
JP2004530288A (ja) 2004-09-30
CN1820230A (zh) 2006-08-16
TW563210B (en) 2003-11-21
CN101581880B (zh) 2011-12-14
EP1362364A2 (en) 2003-11-19
DE60238823D1 (de) 2011-02-17
US6617674B2 (en) 2003-09-09
US20020158317A1 (en) 2002-10-31
AU2002248357A1 (en) 2002-09-04
ATE494629T1 (de) 2011-01-15
CN101581880A (zh) 2009-11-18
KR20030080012A (ko) 2003-10-10
WO2005017627A1 (en) 2005-02-24
CN1514954A (zh) 2004-07-21
CA2438126A1 (en) 2002-08-29
WO2002067292A3 (en) 2002-12-19

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