JP4226905B2 - 半導体パッケージおよびその調製方法 - Google Patents

半導体パッケージおよびその調製方法 Download PDF

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Publication number
JP4226905B2
JP4226905B2 JP2002566524A JP2002566524A JP4226905B2 JP 4226905 B2 JP4226905 B2 JP 4226905B2 JP 2002566524 A JP2002566524 A JP 2002566524A JP 2002566524 A JP2002566524 A JP 2002566524A JP 4226905 B2 JP4226905 B2 JP 4226905B2
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JP
Japan
Prior art keywords
film
wafer
sio
platinum
silicone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2002566524A
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English (en)
Japanese (ja)
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JP2004530288A (ja
JP2004530288A5 (https=
Inventor
ベッカー、グレゴリー
ガードナー、ジェフリー
ハークネス、ブライアン
メレンファント、ルイス
サーマ、サティエンドラ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Dow Silicones Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp, Dow Silicones Corp filed Critical Dow Corning Corp
Publication of JP2004530288A publication Critical patent/JP2004530288A/ja
Publication of JP2004530288A5 publication Critical patent/JP2004530288A5/ja
Application granted granted Critical
Publication of JP4226905B2 publication Critical patent/JP4226905B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0012Processes making use of the tackiness of the photolithographic materials, e.g. for mounting; Packaging for photolithographic material; Packages obtained by processing photolithographic materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Paints Or Removers (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2002566524A 2001-02-20 2002-01-17 半導体パッケージおよびその調製方法 Expired - Lifetime JP4226905B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/789,083 US6617674B2 (en) 2001-02-20 2001-02-20 Semiconductor package and method of preparing same
PCT/US2002/001263 WO2002067292A2 (en) 2001-02-20 2002-01-17 Semiconductor package and method of preparing same

Publications (3)

Publication Number Publication Date
JP2004530288A JP2004530288A (ja) 2004-09-30
JP2004530288A5 JP2004530288A5 (https=) 2008-06-05
JP4226905B2 true JP4226905B2 (ja) 2009-02-18

Family

ID=25146536

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002566524A Expired - Lifetime JP4226905B2 (ja) 2001-02-20 2002-01-17 半導体パッケージおよびその調製方法

Country Status (11)

Country Link
US (1) US6617674B2 (https=)
EP (1) EP1362364B1 (https=)
JP (1) JP4226905B2 (https=)
KR (1) KR100813821B1 (https=)
CN (3) CN101581880B (https=)
AT (1) ATE494629T1 (https=)
AU (1) AU2002248357A1 (https=)
CA (1) CA2438126A1 (https=)
DE (1) DE60238823D1 (https=)
TW (1) TW563210B (https=)
WO (2) WO2002067292A2 (https=)

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JP3910907B2 (ja) * 2002-10-29 2007-04-25 新光電気工業株式会社 キャパシタ素子及びこの製造方法、半導体装置用基板、並びに半導体装置
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Also Published As

Publication number Publication date
ATE494629T1 (de) 2011-01-15
WO2002067292A2 (en) 2002-08-29
US20020158317A1 (en) 2002-10-31
TW563210B (en) 2003-11-21
AU2002248357A1 (en) 2002-09-04
CN1514954A (zh) 2004-07-21
DE60238823D1 (de) 2011-02-17
US6617674B2 (en) 2003-09-09
KR20030080012A (ko) 2003-10-10
EP1362364A2 (en) 2003-11-19
JP2004530288A (ja) 2004-09-30
CN101581880A (zh) 2009-11-18
WO2005017627A1 (en) 2005-02-24
WO2002067292A3 (en) 2002-12-19
CA2438126A1 (en) 2002-08-29
EP1362364B1 (en) 2011-01-05
CN101581880B (zh) 2011-12-14
KR100813821B1 (ko) 2008-03-17
CN1820230A (zh) 2006-08-16

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