KR100802461B1 - 반도체 장치 - Google Patents
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- KR100802461B1 KR100802461B1 KR1020060077067A KR20060077067A KR100802461B1 KR 100802461 B1 KR100802461 B1 KR 100802461B1 KR 1020060077067 A KR1020060077067 A KR 1020060077067A KR 20060077067 A KR20060077067 A KR 20060077067A KR 100802461 B1 KR100802461 B1 KR 100802461B1
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Abstract
Description
Claims (16)
- 한쪽 주 표면의 표면영역에 N-영역과, 그 N-영역의 일부 또는 그 N-영역에 인접하여 설치된 P영역을 가지는 P형 기판에 설치된 반도체장치이며,상기 반도체장치는,상기 P영역의 표층부의 일부에 서로 분리하여 설치된 제1N형 영역 및 제2N형 영역과,상기 제1N형 영역 위에 설치된 제1전극과, 상기 제2N형 영역 위에 설치된 제2전극과,상기 제1N형 영역과 상기 제2N형 영역 사이의 상기 P영역의 표면에 설치된 게이트 전극을 가지고 이루어지는 반도체소자를 포함하고,상기 제1N형 영역 및 상기 제2N형 영역이 상기 P영역에 의해 둘러싸이고, 상기 N-영역과 분리되어 있는 것을 특징으로 하는 반도체장치.
- 제 1항에 있어서,상기 반도체소자와,상기 N-영역의 표면에 상기 P영역으로부터 분리되어 설치된 플로팅 전원전극과,상기 제2전극과 상기 플로팅 전원전극과의 사이에 접속된 저항을 가지고 이루어지는 레벨 시프트 회로를 포함하는 것을 특징으로 하는 반도체장치.
- 제 2항에 있어서,상기 레벨 시프트 회로를 복수개 포함하는 것을 특징으로 하는 반도체장치.
- 제 3항에 있어서,상기 각 레벨 시프트 회로에 있어서의 각 반도체소자에 대응하는 상기 P영역이 각각 상기 N-영역에 있어서 서로 분리되어 설치된 것을 특징으로 하는 반도체장치.
- 제 1항에 있어서,상기 P영역은, 상기 제1N형 영역이 설치되는 제1P영역과 상기 제2N형 영역이 설치되는 제2P영역을 가지고 이루어지는 것을 특징으로 하는 반도체장치.
- 제 5항에 있어서,상기 P영역은, 상기 제2전극과 상기 플로팅 전원전극 사이에 설치되고, 상기 제2P영역이 접속된 제3P영역을 더 가지고 이루어지는 것을 특징으로 하는 반도체장치.
- 제 6항에 있어서,상기 P형 기판과 상기 N-영역 사이에, 상기 제3P영역에 접합된 N+층을 설치한 것을 특징으로 하는 반도체장치.
- 제 1항 내지 제 7항 중 어느 한 항에 있어서,상기 N-영역은, 상기 P형 기판의 상기 한쪽의 주 표면으로부터 N형 불순물이 확산되어 이루어지는 N형 확산층이며, 상기 P영역은 상기 P형 기판의 표면영역으로 이루어지는 것을 특징으로 하는 반도체장치.
- 제 1항 내지 제 7항 중 어느 한 항에 있어서,상기 N-영역 및 상기 P영역과 상기 P형 기판 사이에, N-매립 영역을 가지는 것을 특징으로 하는 반도체장치.
- 제 1항 내지 제 7항 중 어느 한 항에 있어서,상기 제2N형 영역의 일부에 P+영역을 설치하고, 상기 제2전극 대신에 상기 P+영역에 접속된 제3전극을 가지는 것을 특징으로 하는 반도체장치.
- 제 1항 내지 제 7항 중 어느 한 항에 있어서,상기 제2N형 영역과 상기 게이트 전극이 형성된 상기 P영역 사이에, N-리서프 영역을 가지고, 상기 N-리서프 영역과 상기 P형 기판 사이에는, 상기 P형 기판측에서 순차적으로 상기 N-영역과 상기 P영역이 위치하고 있으며, 그 상기 P형 기판위에 겹쳐진 상기 N-영역, 상기 P영역, 상기 N-리서프 영역의 불순물 농도가 표면의 전계가 균일하게 되도록 설정되어 있는 것을 특징으로 하는 반도체장치.
- 제 11항에 있어서,상기 반도체소자가 형성되는 영역에 인접하고, 상기 P형 기판 위에, 상기 기판으로부터 순차적으로 겹쳐진 제1N형층, P형층, 제2N형층으로 이루어지는 적층구조를 가지며, 상기 제1N형층, 상기 P형층, 상기 제2N형층의 불순물 농도가 표면의 전계가 균일하게 되도록 설정되어 있는 것을 특징으로 하는 반도체장치.
- 제 11항에 있어서,상기 반도체소자가 형성되는 P영역에 인접하여, 상기 N-영역의 표면이 노출하고 있는 것을 특징으로 하는 반도체장치.
- 제 3항에 있어서,상기 P영역에 2개의 상기 반도체소자가 설치되고, 상기 2개의 상기 반도체소자 사이의 상기 P영역에, N형 분리층을 설치한 것을 특징으로 하는 반도체장치.
- 제 4항에 있어서,2개의 상기 반도체소자를 포함하고, 상기 2개의 반도체소자는 상기 N-영역에 있어서 서로 분리하여 설치된 상기 P영역에 설치되어 있고, 그 분리된 P영역 사이 에 위치하는 상기 N-영역에 P형 분리층을 설치한 것을 특징으로 하는 반도체장치.
- 제 9항에 있어서,상기 N-매립 영역에 접합하는 N형 영역을 설치하고, 상기 N-매립 영역과 상기 N형 영역에 의하여 상기 P형 기판과 상기 P영역을 분리한 것을 특징으로 하는 반도체장치.
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JPJP-P-2005-00274992 | 2005-09-22 | ||
JP2005274992A JP4832841B2 (ja) | 2005-09-22 | 2005-09-22 | 半導体装置 |
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KR20070033875A KR20070033875A (ko) | 2007-03-27 |
KR100802461B1 true KR100802461B1 (ko) | 2008-02-14 |
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US (1) | US7595536B2 (ko) |
JP (1) | JP4832841B2 (ko) |
KR (1) | KR100802461B1 (ko) |
CN (1) | CN100539186C (ko) |
DE (1) | DE102006038860B4 (ko) |
TW (1) | TWI305416B (ko) |
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JP5047653B2 (ja) * | 2007-03-13 | 2012-10-10 | 三菱電機株式会社 | 半導体装置 |
JP5092174B2 (ja) * | 2007-04-12 | 2012-12-05 | 三菱電機株式会社 | 半導体装置 |
US7687891B2 (en) * | 2007-05-14 | 2010-03-30 | Infineon Technologies Ag | Diode having one or more zones of a first conductivity type and one or more zones of a second conductivity type each located within a layer of the second conductivity type |
US8558307B2 (en) * | 2007-12-18 | 2013-10-15 | Sanyo Semiconductor Co., Ltd. | Semiconductor device with diffused MOS transistor and manufacturing method of the same |
JP5505499B2 (ja) * | 2010-06-04 | 2014-05-28 | 富士電機株式会社 | 半導体装置および駆動回路 |
JP5496826B2 (ja) * | 2010-08-25 | 2014-05-21 | 新電元工業株式会社 | 半導体装置及び半導体装置の製造方法 |
JP5502152B2 (ja) * | 2012-07-05 | 2014-05-28 | 三菱電機株式会社 | 半導体装置 |
JP5947151B2 (ja) * | 2012-08-24 | 2016-07-06 | 新電元工業株式会社 | 高耐圧半導体装置 |
JP5996969B2 (ja) * | 2012-08-24 | 2016-09-21 | 新電元工業株式会社 | 高耐圧半導体装置 |
US9252260B2 (en) | 2013-07-11 | 2016-02-02 | Analog Devices Global | Semiconductor device, and a method of improving breakdown voltage of a semiconductor device |
CN107359194B (zh) * | 2017-07-31 | 2020-03-31 | 电子科技大学 | 一种消除高电场的器件 |
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JP4832841B2 (ja) | 2011-12-07 |
US7595536B2 (en) | 2009-09-29 |
TWI305416B (en) | 2009-01-11 |
DE102006038860A1 (de) | 2007-03-29 |
KR20070033875A (ko) | 2007-03-27 |
CN1937251A (zh) | 2007-03-28 |
US20070063293A1 (en) | 2007-03-22 |
TW200713576A (en) | 2007-04-01 |
CN100539186C (zh) | 2009-09-09 |
DE102006038860B4 (de) | 2011-02-24 |
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