KR100789684B1 - 플라즈마 반응 챔버의 세정 및 조절 방법 - Google Patents
플라즈마 반응 챔버의 세정 및 조절 방법 Download PDFInfo
- Publication number
- KR100789684B1 KR100789684B1 KR1020027008036A KR20027008036A KR100789684B1 KR 100789684 B1 KR100789684 B1 KR 100789684B1 KR 1020027008036 A KR1020027008036 A KR 1020027008036A KR 20027008036 A KR20027008036 A KR 20027008036A KR 100789684 B1 KR100789684 B1 KR 100789684B1
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- KR
- South Korea
- Prior art keywords
- chamber
- cleaning
- gas
- plasma
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 130
- 238000004140 cleaning Methods 0.000 claims abstract description 71
- 239000000460 chlorine Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000005530 etching Methods 0.000 claims abstract description 22
- 230000003750 conditioning effect Effects 0.000 claims abstract description 21
- 238000012545 processing Methods 0.000 claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 238000000151 deposition Methods 0.000 claims abstract description 16
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 10
- 229920000642 polymer Polymers 0.000 claims abstract description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 7
- 239000011737 fluorine Substances 0.000 claims abstract description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract 4
- 229910052782 aluminium Inorganic materials 0.000 claims abstract 4
- 230000008021 deposition Effects 0.000 claims description 11
- 239000006227 byproduct Substances 0.000 claims description 9
- 230000001105 regulatory effect Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910003902 SiCl 4 Inorganic materials 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- 238000005305 interferometry Methods 0.000 claims 1
- 238000011065 in-situ storage Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 230000008569 process Effects 0.000 description 93
- 235000012431 wafers Nutrition 0.000 description 63
- 238000011084 recovery Methods 0.000 description 34
- 239000007789 gas Substances 0.000 description 23
- 238000012360 testing method Methods 0.000 description 12
- 230000001276 controlling effect Effects 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 238000001000 micrograph Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000001311 chemical methods and process Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000001143 conditioned effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 235000011194 food seasoning agent Nutrition 0.000 description 2
- 230000008570 general process Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 125000003821 2-(trimethylsilyl)ethoxymethyl group Chemical group [H]C([H])([H])[Si](C([H])([H])[H])(C([H])([H])[H])C([H])([H])C(OC([H])([H])[*])([H])[H] 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 150000005827 chlorofluoro hydrocarbons Chemical class 0.000 description 1
- NEHMKBQYUWJMIP-UHFFFAOYSA-N chloromethane Chemical compound ClC NEHMKBQYUWJMIP-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000007363 regulatory process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/469,286 US6350697B1 (en) | 1999-12-22 | 1999-12-22 | Method of cleaning and conditioning plasma reaction chamber |
| US09/469,286 | 1999-12-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20020062367A KR20020062367A (ko) | 2002-07-25 |
| KR100789684B1 true KR100789684B1 (ko) | 2008-01-02 |
Family
ID=23863210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020027008036A Expired - Lifetime KR100789684B1 (ko) | 1999-12-22 | 2000-12-08 | 플라즈마 반응 챔버의 세정 및 조절 방법 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6350697B1 (enExample) |
| EP (1) | EP1252361B1 (enExample) |
| JP (1) | JP4995390B2 (enExample) |
| KR (1) | KR100789684B1 (enExample) |
| CN (1) | CN1252313C (enExample) |
| AU (1) | AU2049901A (enExample) |
| DE (1) | DE60042892D1 (enExample) |
| TW (1) | TW487988B (enExample) |
| WO (1) | WO2001046490A1 (enExample) |
Families Citing this family (210)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| KR101794069B1 (ko) * | 2010-05-26 | 2017-12-04 | 삼성전자주식회사 | 반도체 제조설비 및 그의 시즈닝 공정 최적화 방법 |
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| KR20020062367A (ko) | 2002-07-25 |
| EP1252361A1 (en) | 2002-10-30 |
| JP4995390B2 (ja) | 2012-08-08 |
| CN1411514A (zh) | 2003-04-16 |
| US6350697B1 (en) | 2002-02-26 |
| DE60042892D1 (de) | 2009-10-15 |
| JP2003518328A (ja) | 2003-06-03 |
| AU2049901A (en) | 2001-07-03 |
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| EP1252361B1 (en) | 2009-09-02 |
| CN1252313C (zh) | 2006-04-19 |
| WO2001046490A1 (en) | 2001-06-28 |
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