DE60042892D1 - Verfahren zum reinigen und konditionieren einer plasma-reaktionskammer - Google Patents

Verfahren zum reinigen und konditionieren einer plasma-reaktionskammer

Info

Publication number
DE60042892D1
DE60042892D1 DE60042892T DE60042892T DE60042892D1 DE 60042892 D1 DE60042892 D1 DE 60042892D1 DE 60042892 T DE60042892 T DE 60042892T DE 60042892 T DE60042892 T DE 60042892T DE 60042892 D1 DE60042892 D1 DE 60042892D1
Authority
DE
Germany
Prior art keywords
purifying
conditioning
reaction chamber
plasma reaction
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60042892T
Other languages
English (en)
Inventor
Brett C Richardson
Duane Outka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Application granted granted Critical
Publication of DE60042892D1 publication Critical patent/DE60042892D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
DE60042892T 1999-12-22 2000-12-08 Verfahren zum reinigen und konditionieren einer plasma-reaktionskammer Expired - Lifetime DE60042892D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/469,286 US6350697B1 (en) 1999-12-22 1999-12-22 Method of cleaning and conditioning plasma reaction chamber
PCT/US2000/032441 WO2001046490A1 (en) 1999-12-22 2000-12-08 Method of cleaning and conditioning plasma reaction chamber

Publications (1)

Publication Number Publication Date
DE60042892D1 true DE60042892D1 (de) 2009-10-15

Family

ID=23863210

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60042892T Expired - Lifetime DE60042892D1 (de) 1999-12-22 2000-12-08 Verfahren zum reinigen und konditionieren einer plasma-reaktionskammer

Country Status (9)

Country Link
US (1) US6350697B1 (de)
EP (1) EP1252361B1 (de)
JP (1) JP4995390B2 (de)
KR (1) KR100789684B1 (de)
CN (1) CN1252313C (de)
AU (1) AU2049901A (de)
DE (1) DE60042892D1 (de)
TW (1) TW487988B (de)
WO (1) WO2001046490A1 (de)

Families Citing this family (194)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6564810B1 (en) * 2000-03-28 2003-05-20 Asm America Cleaning of semiconductor processing chambers
US20070042580A1 (en) * 2000-08-10 2007-02-22 Amir Al-Bayati Ion implanted insulator material with reduced dielectric constant
US6939434B2 (en) * 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
US7223676B2 (en) * 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US7166524B2 (en) * 2000-08-11 2007-01-23 Applied Materials, Inc. Method for ion implanting insulator material to reduce dielectric constant
US7294563B2 (en) * 2000-08-10 2007-11-13 Applied Materials, Inc. Semiconductor on insulator vertical transistor fabrication and doping process
US7137354B2 (en) * 2000-08-11 2006-11-21 Applied Materials, Inc. Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage
US7465478B2 (en) * 2000-08-11 2008-12-16 Applied Materials, Inc. Plasma immersion ion implantation process
US7303982B2 (en) * 2000-08-11 2007-12-04 Applied Materials, Inc. Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage
US7037813B2 (en) * 2000-08-11 2006-05-02 Applied Materials, Inc. Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
US7320734B2 (en) * 2000-08-11 2008-01-22 Applied Materials, Inc. Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage
US20050230047A1 (en) * 2000-08-11 2005-10-20 Applied Materials, Inc. Plasma immersion ion implantation apparatus
US7288491B2 (en) * 2000-08-11 2007-10-30 Applied Materials, Inc. Plasma immersion ion implantation process
US7430984B2 (en) * 2000-08-11 2008-10-07 Applied Materials, Inc. Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements
JP2002319571A (ja) 2001-04-20 2002-10-31 Kawasaki Microelectronics Kk エッチング槽の前処理方法及び半導体装置の製造方法
US6776851B1 (en) * 2001-07-11 2004-08-17 Lam Research Corporation In-situ cleaning of a polymer coated plasma processing chamber
US7060234B2 (en) * 2001-07-18 2006-06-13 Applied Materials Process and apparatus for abatement of by products generated from deposition processes and cleaning of deposition chambers
US20030062064A1 (en) * 2001-09-28 2003-04-03 Infineon Technologies North America Corp. Method of removing PECVD residues of fluorinated plasma using in-situ H2 plasma
KR20030078550A (ko) * 2002-03-30 2003-10-08 주식회사 하이닉스반도체 반응기의 세정 방법
US7204913B1 (en) * 2002-06-28 2007-04-17 Lam Research Corporation In-situ pre-coating of plasma etch chamber for improved productivity and chamber condition control
US6919279B1 (en) 2002-10-08 2005-07-19 Novellus Systems, Inc. Endpoint detection for high density plasma (HDP) processes
US20040134427A1 (en) * 2003-01-09 2004-07-15 Derderian Garo J. Deposition chamber surface enhancement and resulting deposition chambers
US20050087297A1 (en) * 2003-08-06 2005-04-28 Hiroyuki Kitsunai Plasma processing apparatus and method for stabilizing inner wall of processing chamber
CN1332064C (zh) * 2003-09-03 2007-08-15 统宝光电股份有限公司 降低沉积反应室腔体内氟残留的方法
US7022620B2 (en) * 2003-11-18 2006-04-04 Micron Technology, Inc. Conditioning of a reaction chamber
US7258892B2 (en) 2003-12-10 2007-08-21 Micron Technology, Inc. Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition
US7906393B2 (en) 2004-01-28 2011-03-15 Micron Technology, Inc. Methods for forming small-scale capacitor structures
JP4490704B2 (ja) 2004-02-27 2010-06-30 株式会社日立ハイテクノロジーズ プラズマ処理方法
US20050211546A1 (en) * 2004-03-26 2005-09-29 Applied Materials, Inc. Reactive sputter deposition plasma process using an ion shower grid
US20050211547A1 (en) * 2004-03-26 2005-09-29 Applied Materials, Inc. Reactive sputter deposition plasma reactor and process using plural ion shower grids
US7695590B2 (en) * 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US7244474B2 (en) * 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US7291360B2 (en) * 2004-03-26 2007-11-06 Applied Materials, Inc. Chemical vapor deposition plasma process using plural ion shower grids
US20050211171A1 (en) * 2004-03-26 2005-09-29 Applied Materials, Inc. Chemical vapor deposition plasma reactor having an ion shower grid
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US20050260354A1 (en) * 2004-05-20 2005-11-24 Varian Semiconductor Equipment Associates, Inc. In-situ process chamber preparation methods for plasma ion implantation systems
US7767561B2 (en) * 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
US8058156B2 (en) * 2004-07-20 2011-11-15 Applied Materials, Inc. Plasma immersion ion implantation reactor having multiple ion shower grids
US20060054183A1 (en) * 2004-08-27 2006-03-16 Thomas Nowak Method to reduce plasma damage during cleaning of semiconductor wafer processing chamber
US7531469B2 (en) * 2004-10-23 2009-05-12 Applied Materials, Inc. Dosimetry using optical emission spectroscopy/residual gas analyzer in conjunction with ion current
US7666464B2 (en) * 2004-10-23 2010-02-23 Applied Materials, Inc. RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor
US20060090773A1 (en) * 2004-11-04 2006-05-04 Applied Materials, Inc. Sulfur hexafluoride remote plasma source clean
US20060154494A1 (en) * 2005-01-08 2006-07-13 Applied Materials, Inc., A Delaware Corporation High-throughput HDP-CVD processes for advanced gapfill applications
US7422775B2 (en) * 2005-05-17 2008-09-09 Applied Materials, Inc. Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7312162B2 (en) * 2005-05-17 2007-12-25 Applied Materials, Inc. Low temperature plasma deposition process for carbon layer deposition
US20060260545A1 (en) * 2005-05-17 2006-11-23 Kartik Ramaswamy Low temperature absorption layer deposition and high speed optical annealing system
US7335611B2 (en) * 2005-08-08 2008-02-26 Applied Materials, Inc. Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
US7323401B2 (en) * 2005-08-08 2008-01-29 Applied Materials, Inc. Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
US7429532B2 (en) * 2005-08-08 2008-09-30 Applied Materials, Inc. Semiconductor substrate process using an optically writable carbon-containing mask
US7312148B2 (en) * 2005-08-08 2007-12-25 Applied Materials, Inc. Copper barrier reflow process employing high speed optical annealing
KR100731124B1 (ko) * 2005-12-28 2007-06-22 동부일렉트로닉스 주식회사 증착 챔버의 세정 방법
US20070235058A1 (en) * 2006-04-10 2007-10-11 Daniel Harrington System and method for removing residue from a wafer processing chamber using sound waves
WO2008089168A2 (en) * 2007-01-19 2008-07-24 Applied Materials, Inc. Plasma immersion chamber
US7871828B2 (en) * 2007-02-06 2011-01-18 Applied Materials, Inc. In-situ dose monitoring using optical emission spectroscopy
US7713757B2 (en) * 2008-03-14 2010-05-11 Applied Materials, Inc. Method for measuring dopant concentration during plasma ion implantation
JP5089513B2 (ja) * 2008-07-11 2012-12-05 東京エレクトロン株式会社 プラズマ処理装置システムの制御装置、プラズマ処理システムの制御方法および制御プログラムを記憶した記憶媒体
JP2010153508A (ja) 2008-12-24 2010-07-08 Hitachi High-Technologies Corp 試料のエッチング処理方法
KR101794069B1 (ko) * 2010-05-26 2017-12-04 삼성전자주식회사 반도체 제조설비 및 그의 시즈닝 공정 최적화 방법
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
CN104282518B (zh) * 2013-07-12 2016-12-28 中微半导体设备(上海)有限公司 等离子体处理装置的清洁方法
CN104282519B (zh) * 2013-07-12 2016-12-28 中微半导体设备(上海)有限公司 等离子体处理装置的清洁方法
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) * 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9190293B2 (en) * 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9613819B2 (en) * 2014-06-06 2017-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Process chamber, method of preparing a process chamber, and method of operating a process chamber
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9478434B2 (en) 2014-09-24 2016-10-25 Applied Materials, Inc. Chlorine-based hardmask removal
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9624578B2 (en) * 2014-09-30 2017-04-18 Lam Research Corporation Method for RF compensation in plasma assisted atomic layer deposition
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10128133B1 (en) 2017-06-30 2018-11-13 Infineon Technologies Austria Ag Method of conditioning an etch chamber for contaminant free etching of a semiconductor device
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
CN111919284A (zh) * 2018-03-01 2020-11-10 应用材料公司 在器件制造中形成金属硬掩模的系统和方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US20220189749A1 (en) * 2020-12-14 2022-06-16 Applied Materials, Inc. Process Kit Conditioning Chamber
KR20230043457A (ko) * 2021-09-24 2023-03-31 주성엔지니어링(주) 기판 처리 장치의 세정 방법

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57201016A (en) 1981-06-05 1982-12-09 Oki Electric Ind Co Ltd Cleaning method for semiconductor manufacturing apparatus
US4811684A (en) 1984-11-26 1989-03-14 Semiconductor Energy Laboratory Co., Ltd. Photo CVD apparatus, with deposition prevention in light source chamber
JPS61250185A (ja) 1985-04-25 1986-11-07 Anelva Corp 真空処理装置のクリ−ニング方法
US4657616A (en) 1985-05-17 1987-04-14 Benzing Technologies, Inc. In-situ CVD chamber cleaner
US4786352A (en) 1986-09-12 1988-11-22 Benzing Technologies, Inc. Apparatus for in-situ chamber cleaning
US4842683A (en) 1986-12-19 1989-06-27 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor
US5158644A (en) 1986-12-19 1992-10-27 Applied Materials, Inc. Reactor chamber self-cleaning process
JPS63210275A (ja) 1987-02-24 1988-08-31 Semiconductor Energy Lab Co Ltd プラズマ反応装置内を清浄にする方法
JPH029115A (ja) 1988-06-28 1990-01-12 Mitsubishi Electric Corp 半導体製造装置
JP2892694B2 (ja) 1989-07-31 1999-05-17 株式会社日立製作所 プラズマクリーニング方法
US5207836A (en) 1989-08-25 1993-05-04 Applied Materials, Inc. Cleaning process for removal of deposits from the susceptor of a chemical vapor deposition apparatus
JPH03130368A (ja) 1989-09-22 1991-06-04 Applied Materials Inc 半導体ウェーハプロセス装置の洗浄方法
JPH0487329A (ja) * 1990-07-31 1992-03-19 Oki Electric Ind Co Ltd ドライエッチング方法
US5877032A (en) * 1995-10-12 1999-03-02 Lucent Technologies Inc. Process for device fabrication in which the plasma etch is controlled by monitoring optical emission
DE69320963T2 (de) 1992-06-22 1999-05-12 Lam Res Corp Plasmareinigungsverfahren zum entfernen von rückständen in einer plasmabehandlungskammer
EP0648858A1 (de) 1993-10-15 1995-04-19 Applied Materials, Inc. Methoden zum Beschichten von Plasmaätzkammern, sowie Vorrichtung zum Plasmaätzen von Werkstücken
US5817574A (en) * 1993-12-29 1998-10-06 Intel Corporation Method of forming a high surface area interconnection structure
JPH07335626A (ja) * 1994-06-10 1995-12-22 Hitachi Ltd プラズマ処理装置およびプラズマ処理方法
JP2962181B2 (ja) * 1995-02-01 1999-10-12 ヤマハ株式会社 ドライエッチング方法及び装置
US6156663A (en) * 1995-10-03 2000-12-05 Hitachi, Ltd. Method and apparatus for plasma processing
US5756400A (en) * 1995-12-08 1998-05-26 Applied Materials, Inc. Method and apparatus for cleaning by-products from plasma chamber surfaces
US5647953A (en) 1995-12-22 1997-07-15 Lam Research Corporation Plasma cleaning method for removing residues in a plasma process chamber
US6136211A (en) * 1997-11-12 2000-10-24 Applied Materials, Inc. Self-cleaning etch process
JP3238137B2 (ja) * 1999-03-23 2001-12-10 株式会社日立製作所 プラズマ処理室のクリーニング方法

Also Published As

Publication number Publication date
KR100789684B1 (ko) 2008-01-02
US6350697B1 (en) 2002-02-26
CN1252313C (zh) 2006-04-19
JP4995390B2 (ja) 2012-08-08
WO2001046490A1 (en) 2001-06-28
CN1411514A (zh) 2003-04-16
JP2003518328A (ja) 2003-06-03
TW487988B (en) 2002-05-21
EP1252361B1 (de) 2009-09-02
EP1252361A1 (de) 2002-10-30
AU2049901A (en) 2001-07-03
KR20020062367A (ko) 2002-07-25

Similar Documents

Publication Publication Date Title
DE60042892D1 (de) Verfahren zum reinigen und konditionieren einer plasma-reaktionskammer
DE60014010D1 (de) Verfahren und Anlage zum Reifenaufbau
DE60016832D1 (de) Brennkammeranordnung und Verfahren zum Betrieb einer Brennkammeranordnung
DE60014534D1 (de) Abgasreinigungskatalysator und Verfahren zu dessen Herstellung
DE59803887D1 (de) Mikrosystem und verfahren zum herstellen eines mikrosystems
DE50109474D1 (de) Verfahren und Vorrichtung zum Betreiben einer Gasentladungslampe
DE69838857D1 (de) Verfahren zur Behandlung eines kontaminierten Gases
DE69829261D1 (de) Verfahren zur Rauchgasbehandlung
ID19557A (id) Proses dan alat pemurnian gas
DE69816509D1 (de) Verfahren zur Abgasbehandlung
DE59808697D1 (de) Verfahren und vorrichtung zum erzeugen eines plasmas
DE69503986D1 (de) Abgasreiniger und Verfahren zu dessen Reinigung
DE69838226D1 (de) Verfahren zur plasmabehandlung
DE69513615T2 (de) Verfahren zum Reinigen von Halogen-enthaltendem Gas
DE60021307D1 (de) Mittel, Verfahren und Einrichtung zur Gasreinigung
DE60120278D1 (de) Wärmebehandlungsanlage und Verfahren zu ihrer Reinigung
DE59907940D1 (de) Brennkammer und verfahren zum betrieb einer brennkammer
DE69910669D1 (de) Abgasreinigungskatalysator und Verfahren zu dessen Herstellung
ATE445099T1 (de) Verfahren und anlage zum regeln des pegelstandes einer stauanlage
DE69714015D1 (de) Verfahren zur steuerung eines industriellen roboters
DE60033388D1 (de) Verfahren zum katalytischen Hydrocracken
EP1409113A4 (de) Vorrichtung und verfahren zur reinigung von fluid
DE69832649D1 (de) Verfahren zur Abgasbehandlung
PL362055A1 (en) Method and installation for purifying cement plant fumes
ID30524A (id) Proses dan piranti untuk reaksi rendaman fluida

Legal Events

Date Code Title Description
8364 No opposition during term of opposition