JP4490704B2 - プラズマ処理方法 - Google Patents
プラズマ処理方法 Download PDFInfo
- Publication number
- JP4490704B2 JP4490704B2 JP2004054229A JP2004054229A JP4490704B2 JP 4490704 B2 JP4490704 B2 JP 4490704B2 JP 2004054229 A JP2004054229 A JP 2004054229A JP 2004054229 A JP2004054229 A JP 2004054229A JP 4490704 B2 JP4490704 B2 JP 4490704B2
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- JP
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- Prior art keywords
- processing
- lot
- processing chamber
- plasma
- wafer
- Prior art date
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- Expired - Fee Related
Links
- 238000003672 processing method Methods 0.000 title claims description 8
- 238000012545 processing Methods 0.000 claims description 316
- 235000012431 wafers Nutrition 0.000 claims description 88
- 238000004140 cleaning Methods 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 42
- 238000010438 heat treatment Methods 0.000 claims description 12
- 239000007789 gas Substances 0.000 description 36
- 235000011194 food seasoning agent Nutrition 0.000 description 23
- 238000005530 etching Methods 0.000 description 19
- 238000000295 emission spectrum Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000007795 chemical reaction product Substances 0.000 description 6
- 238000000513 principal component analysis Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000012937 correction Methods 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 238000007781 pre-processing Methods 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000006557 surface reaction Methods 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000001748 luminescence spectrum Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000491 multivariate analysis Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 238000007619 statistical method Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Description
2 電磁エネルギ供給手段
3 ガス供給管
4 流量制御器
5 石英シャワープレート
6 試料台
7 ウエハ
8 圧力調整弁
9 ガス排気系
10 バイアス電源
11 バイアス電力伝送路
12 温度調整器(ヒータ)
13 温度調整用電源
14 システム制御装置
15 処理室表面温度制御部
16 カセット
17 ウエハ搬送部
21 検索キー
22 ロット前温度制御処理条件データベース
23 処理条件
24 検索キー
25 ウエハ毎温度制御処理条件データベース
26 標準補正処理時間テーブル
31 分光器
32 光ファイバ
33 観測窓
34 終点判定部
41 ロット前処理
Claims (1)
- 真空処理室を形成する真空処理容器と、
前記真空処理容器内に処理ガスを供給する処理ガス供給装置と、
該真空処理容器内に電磁エネルギを供給し処理室内に供給した処理ガスを解離してプラズマを生成するプラズマ生成手段とを備え、
前記真空処理容器内に生成されたプラズマ用いてウエハを対象とするロット処理、ロット前クリーニング処理、およびロット前温度制御処理を施すプラズマ処理方法において、
直前のロットの処理時間、処理電力、処理圧力およびウエハ処理枚数をもとに、直前のロット終了時における処理室内表面温度上昇を見積もって直前のロット終了時における内表面温度を推定し、
前記直前のロット終了時からの空き時間をもとに該空き時間経過後のロット処理の開始時における処理室内表面温度を推定し、
次に、続いて行われる、ウエハ処理前における処理室内表面の温度を制御するためのロット前クリーニング処理における処理電力、処理圧力および処理時間をもとに、さらに続いて行われるロット前温度制御処理の開始時における処理室内表面温度を推定し、
この推定値をもとに、前記ロット前温度制御処理の処理条件を決定し、ウエハ処理前における処理室内表面の温度を加熱制御することを特徴とするプラズマ処理方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004054229A JP4490704B2 (ja) | 2004-02-27 | 2004-02-27 | プラズマ処理方法 |
US10/875,213 US6939435B1 (en) | 2004-02-27 | 2004-06-25 | Plasma processing apparatus and processing method |
US11/217,287 US20050284574A1 (en) | 2004-02-27 | 2005-09-02 | Plasma processing apparatus and processing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004054229A JP4490704B2 (ja) | 2004-02-27 | 2004-02-27 | プラズマ処理方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006116779A Division JP4490938B2 (ja) | 2006-04-20 | 2006-04-20 | プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005244065A JP2005244065A (ja) | 2005-09-08 |
JP4490704B2 true JP4490704B2 (ja) | 2010-06-30 |
Family
ID=34879734
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004054229A Expired - Fee Related JP4490704B2 (ja) | 2004-02-27 | 2004-02-27 | プラズマ処理方法 |
Country Status (2)
Country | Link |
---|---|
US (2) | US6939435B1 (ja) |
JP (1) | JP4490704B2 (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050233477A1 (en) * | 2004-03-05 | 2005-10-20 | Tokyo Electron Limited | Substrate processing apparatus, substrate processing method, and program for implementing the method |
US7879409B2 (en) * | 2004-07-23 | 2011-02-01 | Applied Materials, Inc. | Repeatability of CVD film deposition during sequential processing of substrates in a deposition chamber |
US8163087B2 (en) * | 2005-03-31 | 2012-04-24 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system and method |
JP2007158230A (ja) * | 2005-12-08 | 2007-06-21 | Nec Electronics Corp | プラズマエッチング装置のクリーニング方法、およびプラズマエッチング装置 |
US7846266B1 (en) | 2006-02-17 | 2010-12-07 | Kla-Tencor Technologies Corporation | Environment friendly methods and systems for template cleaning and reclaiming in imprint lithography technology |
JP4914119B2 (ja) * | 2006-05-31 | 2012-04-11 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法およびプラズマ処理装置 |
US9157151B2 (en) * | 2006-06-05 | 2015-10-13 | Applied Materials, Inc. | Elimination of first wafer effect for PECVD films |
JP4646941B2 (ja) * | 2007-03-30 | 2011-03-09 | 東京エレクトロン株式会社 | 基板処理装置及びその処理室内の状態安定化方法 |
US20080237184A1 (en) * | 2007-03-30 | 2008-10-02 | Mamoru Yakushiji | Method and apparatus for plasma processing |
US8226840B2 (en) | 2008-05-02 | 2012-07-24 | Micron Technology, Inc. | Methods of removing silicon dioxide |
CN101990707B (zh) * | 2008-09-30 | 2013-03-06 | 东京毅力科创株式会社 | 基板的异常载置状态的检测方法、基板处理方法、计算机可读取的存储介质以及基板处理装置 |
JP2010153508A (ja) | 2008-12-24 | 2010-07-08 | Hitachi High-Technologies Corp | 試料のエッチング処理方法 |
US8426763B2 (en) | 2009-04-23 | 2013-04-23 | Micron Technology, Inc. | Rapid thermal processing systems and methods for treating microelectronic substrates |
US20100332010A1 (en) * | 2009-06-30 | 2010-12-30 | Brian Choi | Seasoning plasma processing systems |
US9984906B2 (en) | 2012-05-25 | 2018-05-29 | Tokyo Electron Limited | Plasma processing device and plasma processing method |
JP5753866B2 (ja) * | 2013-03-11 | 2015-07-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
JP2016103496A (ja) * | 2014-11-27 | 2016-06-02 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
CN110832624B (zh) * | 2017-07-05 | 2024-02-27 | 株式会社爱发科 | 等离子体处理方法及等离子体处理装置 |
US10867812B2 (en) | 2017-08-30 | 2020-12-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor manufacturing system and control method |
JP7011033B2 (ja) * | 2018-03-01 | 2022-01-26 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法およびプログラム |
JP6623315B2 (ja) * | 2019-01-21 | 2019-12-18 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
US11869754B2 (en) * | 2019-09-06 | 2024-01-09 | Applied Materials, Inc. | Dynamic pressure control for processing chambers implementing real-time learning |
JP2022178406A (ja) | 2021-05-20 | 2022-12-02 | 東京エレクトロン株式会社 | 温度制御方法及び温度制御装置 |
WO2023003768A1 (en) * | 2021-07-21 | 2023-01-26 | Lam Research Corporation | Showerhead temperature based deposition time compensation for thickness trending in pecvd deposition system |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04354330A (ja) * | 1991-05-31 | 1992-12-08 | Victor Co Of Japan Ltd | ドライエッチング装置及びドライエッチング方法 |
JPH0888095A (ja) * | 1994-09-19 | 1996-04-02 | Hitachi Ltd | プラズマ処理装置及びその制御方法 |
JPH09172003A (ja) * | 1995-09-05 | 1997-06-30 | Applied Materials Inc | プラズマ処理における温度制御の方法及び装置 |
JPH10130872A (ja) * | 1996-10-29 | 1998-05-19 | Sumitomo Metal Ind Ltd | プラズマ処理方法 |
JPH10149899A (ja) * | 1996-10-18 | 1998-06-02 | Applied Materials Inc | 円錐形ドームを有する誘電結合平行平板型プラズマリアクター |
JP2002170819A (ja) * | 2000-12-04 | 2002-06-14 | Hitachi Ltd | プラズマエッチング処理装置 |
JP2003520431A (ja) * | 2000-01-13 | 2003-07-02 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 半導体ウェーハにプラズマウォームアップを行う方法 |
Family Cites Families (16)
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JP3404434B2 (ja) | 1994-09-19 | 2003-05-06 | 株式会社日立製作所 | マイクロ波プラズマ装置のクリーニング方法 |
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JP4105866B2 (ja) | 2001-12-05 | 2008-06-25 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理装置のクリーニング方法 |
JP3630666B2 (ja) | 2002-02-15 | 2005-03-16 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
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JP3699416B2 (ja) | 2002-04-16 | 2005-09-28 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
US6902648B2 (en) * | 2003-01-09 | 2005-06-07 | Oki Electric Industry Co., Ltd. | Plasma etching device |
-
2004
- 2004-02-27 JP JP2004054229A patent/JP4490704B2/ja not_active Expired - Fee Related
- 2004-06-25 US US10/875,213 patent/US6939435B1/en not_active Expired - Fee Related
-
2005
- 2005-09-02 US US11/217,287 patent/US20050284574A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04354330A (ja) * | 1991-05-31 | 1992-12-08 | Victor Co Of Japan Ltd | ドライエッチング装置及びドライエッチング方法 |
JPH0888095A (ja) * | 1994-09-19 | 1996-04-02 | Hitachi Ltd | プラズマ処理装置及びその制御方法 |
JPH09172003A (ja) * | 1995-09-05 | 1997-06-30 | Applied Materials Inc | プラズマ処理における温度制御の方法及び装置 |
JPH10149899A (ja) * | 1996-10-18 | 1998-06-02 | Applied Materials Inc | 円錐形ドームを有する誘電結合平行平板型プラズマリアクター |
JPH10130872A (ja) * | 1996-10-29 | 1998-05-19 | Sumitomo Metal Ind Ltd | プラズマ処理方法 |
JP2003520431A (ja) * | 2000-01-13 | 2003-07-02 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 半導体ウェーハにプラズマウォームアップを行う方法 |
JP2002170819A (ja) * | 2000-12-04 | 2002-06-14 | Hitachi Ltd | プラズマエッチング処理装置 |
Also Published As
Publication number | Publication date |
---|---|
US20050284574A1 (en) | 2005-12-29 |
US20050189070A1 (en) | 2005-09-01 |
JP2005244065A (ja) | 2005-09-08 |
US6939435B1 (en) | 2005-09-06 |
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