DE60120278T8 - Wärmebehandlungsanlage und Verfahren zu ihrer Reinigung - Google Patents

Wärmebehandlungsanlage und Verfahren zu ihrer Reinigung Download PDF

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Publication number
DE60120278T8
DE60120278T8 DE60120278T DE60120278T DE60120278T8 DE 60120278 T8 DE60120278 T8 DE 60120278T8 DE 60120278 T DE60120278 T DE 60120278T DE 60120278 T DE60120278 T DE 60120278T DE 60120278 T8 DE60120278 T8 DE 60120278T8
Authority
DE
Germany
Prior art keywords
purification
heat treatment
treatment plant
plant
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE60120278T
Other languages
English (en)
Other versions
DE60120278T2 (de
DE60120278D1 (de
Inventor
Yutaka Esashi-Shi Takahashi
Kato Esashi-Shi Hitoshi
Hiroyuki Esashi-Shi Yamamoto
Katsutoshi Esashi-Shi Ishiti
Kazuaki Esashi-Shi Nishimura
Phillip Esashi-Shi Spaull
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000186942A external-priority patent/JP2002008991A/ja
Priority claimed from JP2000223233A external-priority patent/JP3891765B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of DE60120278D1 publication Critical patent/DE60120278D1/de
Publication of DE60120278T2 publication Critical patent/DE60120278T2/de
Publication of DE60120278T8 publication Critical patent/DE60120278T8/de
Active legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
DE60120278T 2000-06-21 2001-06-19 Wärmebehandlungsanlage und Verfahren zu ihrer Reinigung Active DE60120278T8 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000186942A JP2002008991A (ja) 2000-06-21 2000-06-21 クリーニング方法
JP2000186942 2000-06-21
JP2000223233 2000-07-25
JP2000223233A JP3891765B2 (ja) 2000-07-25 2000-07-25 被処理体の洗浄方法及び洗浄装置

Publications (3)

Publication Number Publication Date
DE60120278D1 DE60120278D1 (de) 2006-07-20
DE60120278T2 DE60120278T2 (de) 2007-05-24
DE60120278T8 true DE60120278T8 (de) 2007-09-06

Family

ID=26594410

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60120278T Active DE60120278T8 (de) 2000-06-21 2001-06-19 Wärmebehandlungsanlage und Verfahren zu ihrer Reinigung

Country Status (5)

Country Link
US (2) US20010055738A1 (de)
EP (1) EP1167568B1 (de)
KR (1) KR100791153B1 (de)
DE (1) DE60120278T8 (de)
TW (1) TW497150B (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3364488B1 (ja) * 2001-07-05 2003-01-08 東京エレクトロン株式会社 反応容器のクリーニング方法及び成膜装置
JP3872027B2 (ja) * 2003-03-07 2007-01-24 株式会社東芝 クリーニング方法及び半導体製造装置
JP4640800B2 (ja) * 2005-06-22 2011-03-02 東京エレクトロン株式会社 被処理体の処理方法、処理装置、薄膜形成方法、薄膜形成装置及びプログラム
CN100491588C (zh) * 2006-03-20 2009-05-27 中国科学院半导体研究所 一种石墨清洗装置
JP4939864B2 (ja) * 2006-07-25 2012-05-30 東京エレクトロン株式会社 ガス供給装置、ガス供給方法、薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置
JP4918453B2 (ja) * 2007-10-11 2012-04-18 東京エレクトロン株式会社 ガス供給装置及び薄膜形成装置
JP5036849B2 (ja) * 2009-08-27 2012-09-26 株式会社日立国際電気 半導体装置の製造方法、クリーニング方法および基板処理装置
TWI570777B (zh) * 2011-12-23 2017-02-11 索泰克公司 減少半導體沉積系統反應腔內非所需沉積物之製程及系統
TWI565825B (zh) * 2012-06-07 2017-01-11 索泰克公司 沉積系統之氣體注入組件及相關使用方法
CN102766853B (zh) * 2012-07-24 2016-03-09 上海华虹宏力半导体制造有限公司 直立式沉积炉管
KR101516587B1 (ko) * 2014-01-27 2015-05-04 주식회사 엘지실트론 웨이퍼용 열처리 노 세정 방법
CN107812768A (zh) * 2017-10-27 2018-03-20 国网福建省电力有限公司 绝缘瓷套翻转工装及其使用方法
JP6956660B2 (ja) * 2018-03-19 2021-11-02 東京エレクトロン株式会社 クリーニング方法及び成膜装置
KR102695925B1 (ko) * 2019-09-02 2024-08-16 삼성전자주식회사 반도체 제조 장치

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59143073A (ja) * 1983-02-03 1984-08-16 Seiko Instr & Electronics Ltd ドライエツチング装置
JP3140068B2 (ja) * 1991-01-31 2001-03-05 東京エレクトロン株式会社 クリーニング方法
JPH04341568A (ja) * 1991-05-16 1992-11-27 Toshiba Corp 薄膜形成方法及び薄膜形成装置
US5637153A (en) * 1993-04-30 1997-06-10 Tokyo Electron Limited Method of cleaning reaction tube and exhaustion piping system in heat processing apparatus
US5647945A (en) * 1993-08-25 1997-07-15 Tokyo Electron Limited Vacuum processing apparatus
US5616208A (en) * 1993-09-17 1997-04-01 Tokyo Electron Limited Vacuum processing apparatus, vacuum processing method, and method for cleaning the vacuum processing apparatus
US5609721A (en) * 1994-03-11 1997-03-11 Fujitsu Limited Semiconductor device manufacturing apparatus and its cleaning method
JP3247270B2 (ja) * 1994-08-25 2002-01-15 東京エレクトロン株式会社 処理装置及びドライクリーニング方法
JPH08209350A (ja) * 1995-02-03 1996-08-13 Mitsubishi Electric Corp 薄膜形成装置及び薄膜形成装置のクリーニング方法
JP3476638B2 (ja) * 1996-12-20 2003-12-10 東京エレクトロン株式会社 Ｃｖｄ成膜方法
US5849092A (en) * 1997-02-25 1998-12-15 Applied Materials, Inc. Process for chlorine trifluoride chamber cleaning
US6201219B1 (en) * 1998-02-25 2001-03-13 Micron Technology, Inc. Chamber and cleaning process therefor
KR20000000946A (ko) * 1998-06-05 2000-01-15 주재현 기화기 및 이를 사용한 화학 기상 증착장치
US6290779B1 (en) * 1998-06-12 2001-09-18 Tokyo Electron Limited Systems and methods for dry cleaning process chambers
JP2000040685A (ja) * 1998-07-22 2000-02-08 Toshiba Corp 半導体基板の洗浄装置及びその洗浄方法
JP4346741B2 (ja) * 1999-08-05 2009-10-21 キヤノンアネルバ株式会社 発熱体ｃｖｄ装置及び付着膜の除去方法
JP2001135576A (ja) * 1999-10-29 2001-05-18 Applied Materials Inc 薄膜形成装置及び薄膜形成方法

Also Published As

Publication number Publication date
KR100791153B1 (ko) 2008-01-02
DE60120278T2 (de) 2007-05-24
EP1167568A1 (de) 2002-01-02
US20010055738A1 (en) 2001-12-27
US20040163677A1 (en) 2004-08-26
EP1167568B1 (de) 2006-06-07
DE60120278D1 (de) 2006-07-20
TW497150B (en) 2002-08-01
KR20010114169A (ko) 2001-12-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8381 Inventor (new situation)

Inventor name: TAKAHASHI, YUTAKA, ESASHI-SHI, IWATE-KEN, JP

Inventor name: HITOSHI, KATO, ESASHI-SHI, IWATE-KEN, JP

Inventor name: YAMAMOTO, HIROYUKI, ESASHI-SHI, IWATE-KEN, JP

Inventor name: ISHITI, KATSUTOSHI, ESASHI-SHI, IWATE-KEN, JP

Inventor name: NISHIMURA, KAZUAKI, ESASHI-SHI, IWATE-KEN, JP

Inventor name: SPAULL, PHILLIP, ESASHI-SHI, IWATE-KEN, JP