DE60120278D1 - Wärmebehandlungsanlage und Verfahren zu ihrer Reinigung - Google Patents
Wärmebehandlungsanlage und Verfahren zu ihrer ReinigungInfo
- Publication number
- DE60120278D1 DE60120278D1 DE60120278T DE60120278T DE60120278D1 DE 60120278 D1 DE60120278 D1 DE 60120278D1 DE 60120278 T DE60120278 T DE 60120278T DE 60120278 T DE60120278 T DE 60120278T DE 60120278 D1 DE60120278 D1 DE 60120278D1
- Authority
- DE
- Germany
- Prior art keywords
- purification
- heat treatment
- treatment plant
- plant
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000186942 | 2000-06-21 | ||
JP2000186942A JP2002008991A (ja) | 2000-06-21 | 2000-06-21 | クリーニング方法 |
JP2000223233 | 2000-07-25 | ||
JP2000223233A JP3891765B2 (ja) | 2000-07-25 | 2000-07-25 | 被処理体の洗浄方法及び洗浄装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
DE60120278D1 true DE60120278D1 (de) | 2006-07-20 |
DE60120278T2 DE60120278T2 (de) | 2007-05-24 |
DE60120278T8 DE60120278T8 (de) | 2007-09-06 |
Family
ID=26594410
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60120278T Active DE60120278T8 (de) | 2000-06-21 | 2001-06-19 | Wärmebehandlungsanlage und Verfahren zu ihrer Reinigung |
Country Status (5)
Country | Link |
---|---|
US (2) | US20010055738A1 (de) |
EP (1) | EP1167568B1 (de) |
KR (1) | KR100791153B1 (de) |
DE (1) | DE60120278T8 (de) |
TW (1) | TW497150B (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3364488B1 (ja) * | 2001-07-05 | 2003-01-08 | 東京エレクトロン株式会社 | 反応容器のクリーニング方法及び成膜装置 |
JP3872027B2 (ja) * | 2003-03-07 | 2007-01-24 | 株式会社東芝 | クリーニング方法及び半導体製造装置 |
JP4640800B2 (ja) * | 2005-06-22 | 2011-03-02 | 東京エレクトロン株式会社 | 被処理体の処理方法、処理装置、薄膜形成方法、薄膜形成装置及びプログラム |
CN100491588C (zh) * | 2006-03-20 | 2009-05-27 | 中国科学院半导体研究所 | 一种石墨清洗装置 |
JP4939864B2 (ja) * | 2006-07-25 | 2012-05-30 | 東京エレクトロン株式会社 | ガス供給装置、ガス供給方法、薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置 |
JP4918453B2 (ja) * | 2007-10-11 | 2012-04-18 | 東京エレクトロン株式会社 | ガス供給装置及び薄膜形成装置 |
JP5036849B2 (ja) * | 2009-08-27 | 2012-09-26 | 株式会社日立国際電気 | 半導体装置の製造方法、クリーニング方法および基板処理装置 |
TWI570777B (zh) * | 2011-12-23 | 2017-02-11 | 索泰克公司 | 減少半導體沉積系統反應腔內非所需沉積物之製程及系統 |
TWI565825B (zh) * | 2012-06-07 | 2017-01-11 | 索泰克公司 | 沉積系統之氣體注入組件及相關使用方法 |
CN102766853B (zh) * | 2012-07-24 | 2016-03-09 | 上海华虹宏力半导体制造有限公司 | 直立式沉积炉管 |
KR101516587B1 (ko) * | 2014-01-27 | 2015-05-04 | 주식회사 엘지실트론 | 웨이퍼용 열처리 노 세정 방법 |
CN107812768A (zh) * | 2017-10-27 | 2018-03-20 | 国网福建省电力有限公司 | 绝缘瓷套翻转工装及其使用方法 |
JP6956660B2 (ja) * | 2018-03-19 | 2021-11-02 | 東京エレクトロン株式会社 | クリーニング方法及び成膜装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59143073A (ja) * | 1983-02-03 | 1984-08-16 | Seiko Instr & Electronics Ltd | ドライエツチング装置 |
JP3140068B2 (ja) * | 1991-01-31 | 2001-03-05 | 東京エレクトロン株式会社 | クリーニング方法 |
JPH04341568A (ja) * | 1991-05-16 | 1992-11-27 | Toshiba Corp | 薄膜形成方法及び薄膜形成装置 |
US5637153A (en) * | 1993-04-30 | 1997-06-10 | Tokyo Electron Limited | Method of cleaning reaction tube and exhaustion piping system in heat processing apparatus |
US5647945A (en) * | 1993-08-25 | 1997-07-15 | Tokyo Electron Limited | Vacuum processing apparatus |
US5616208A (en) * | 1993-09-17 | 1997-04-01 | Tokyo Electron Limited | Vacuum processing apparatus, vacuum processing method, and method for cleaning the vacuum processing apparatus |
US5609721A (en) * | 1994-03-11 | 1997-03-11 | Fujitsu Limited | Semiconductor device manufacturing apparatus and its cleaning method |
JP3247270B2 (ja) * | 1994-08-25 | 2002-01-15 | 東京エレクトロン株式会社 | 処理装置及びドライクリーニング方法 |
JPH08209350A (ja) * | 1995-02-03 | 1996-08-13 | Mitsubishi Electric Corp | 薄膜形成装置及び薄膜形成装置のクリーニング方法 |
JP3476638B2 (ja) * | 1996-12-20 | 2003-12-10 | 東京エレクトロン株式会社 | Cvd成膜方法 |
US5849092A (en) * | 1997-02-25 | 1998-12-15 | Applied Materials, Inc. | Process for chlorine trifluoride chamber cleaning |
US6201219B1 (en) * | 1998-02-25 | 2001-03-13 | Micron Technology, Inc. | Chamber and cleaning process therefor |
KR20000000946A (ko) * | 1998-06-05 | 2000-01-15 | 주재현 | 기화기 및 이를 사용한 화학 기상 증착장치 |
US6290779B1 (en) * | 1998-06-12 | 2001-09-18 | Tokyo Electron Limited | Systems and methods for dry cleaning process chambers |
JP2000040685A (ja) * | 1998-07-22 | 2000-02-08 | Toshiba Corp | 半導体基板の洗浄装置及びその洗浄方法 |
JP4346741B2 (ja) * | 1999-08-05 | 2009-10-21 | キヤノンアネルバ株式会社 | 発熱体cvd装置及び付着膜の除去方法 |
JP2001135576A (ja) * | 1999-10-29 | 2001-05-18 | Applied Materials Inc | 薄膜形成装置及び薄膜形成方法 |
-
2001
- 2001-06-19 EP EP01114658A patent/EP1167568B1/de not_active Expired - Lifetime
- 2001-06-19 DE DE60120278T patent/DE60120278T8/de active Active
- 2001-06-20 US US09/884,105 patent/US20010055738A1/en not_active Abandoned
- 2001-06-20 TW TW090115013A patent/TW497150B/zh not_active IP Right Cessation
- 2001-06-20 KR KR1020010034975A patent/KR100791153B1/ko not_active IP Right Cessation
-
2004
- 2004-03-02 US US10/790,013 patent/US20040163677A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
DE60120278T8 (de) | 2007-09-06 |
TW497150B (en) | 2002-08-01 |
DE60120278T2 (de) | 2007-05-24 |
US20040163677A1 (en) | 2004-08-26 |
US20010055738A1 (en) | 2001-12-27 |
KR20010114169A (ko) | 2001-12-29 |
KR100791153B1 (ko) | 2008-01-02 |
EP1167568A1 (de) | 2002-01-02 |
EP1167568B1 (de) | 2006-06-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8381 | Inventor (new situation) |
Inventor name: TAKAHASHI, YUTAKA, ESASHI-SHI, IWATE-KEN, JP Inventor name: HITOSHI, KATO, ESASHI-SHI, IWATE-KEN, JP Inventor name: YAMAMOTO, HIROYUKI, ESASHI-SHI, IWATE-KEN, JP Inventor name: ISHITI, KATSUTOSHI, ESASHI-SHI, IWATE-KEN, JP Inventor name: NISHIMURA, KAZUAKI, ESASHI-SHI, IWATE-KEN, JP Inventor name: SPAULL, PHILLIP, ESASHI-SHI, IWATE-KEN, JP |