KR100780021B1 - 플라즈마처리방법 및 플라즈마처리장치 - Google Patents

플라즈마처리방법 및 플라즈마처리장치 Download PDF

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KR100780021B1
KR100780021B1 KR1020060075692A KR20060075692A KR100780021B1 KR 100780021 B1 KR100780021 B1 KR 100780021B1 KR 1020060075692 A KR1020060075692 A KR 1020060075692A KR 20060075692 A KR20060075692 A KR 20060075692A KR 100780021 B1 KR100780021 B1 KR 100780021B1
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plasma
processing
discharge
time
break
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Korean (ko)
Inventor
에이지 이케가미
쇼지 이쿠하라
다케시 시마다
겐이치 구와바라
다카오 아라세
츠요시 마츠모토
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가부시키가이샤 히다치 하이테크놀로지즈
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32981—Gas analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/182—Obtaining or maintaining desired pressure
    • H01J2237/1825—Evacuating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/327—Arrangements for generating the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020060075692A 2006-05-31 2006-08-10 플라즈마처리방법 및 플라즈마처리장치 Expired - Fee Related KR100780021B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006152305A JP4914119B2 (ja) 2006-05-31 2006-05-31 プラズマ処理方法およびプラズマ処理装置
JPJP-P-2006-00152305 2006-05-31

Publications (1)

Publication Number Publication Date
KR100780021B1 true KR100780021B1 (ko) 2007-11-27

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KR1020060075692A Expired - Fee Related KR100780021B1 (ko) 2006-05-31 2006-08-10 플라즈마처리방법 및 플라즈마처리장치

Country Status (4)

Country Link
US (3) US8038896B2 (https=)
JP (1) JP4914119B2 (https=)
KR (1) KR100780021B1 (https=)
TW (1) TW200744129A (https=)

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KR101604844B1 (ko) * 2009-12-16 2016-03-18 주성엔지니어링(주) 기판 처리 장치 및 이의 처리 방법

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JP4914119B2 (ja) * 2006-05-31 2012-04-11 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
US9157151B2 (en) * 2006-06-05 2015-10-13 Applied Materials, Inc. Elimination of first wafer effect for PECVD films
KR100816453B1 (ko) * 2006-06-28 2008-03-27 (주)쎄미시스코 공정챔버의 실시간 리크 검출 시스템
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JP5160393B2 (ja) * 2008-12-16 2013-03-13 東京エレクトロン株式会社 プラズマ処理方法，プラズマ処理装置，プラズマ処理装置の水分量検出方法
JP2010165738A (ja) * 2009-01-13 2010-07-29 Hitachi High-Technologies Corp プラズマ処理装置のシーズニング方法およびシーズニングの終了判定方法。
US20100332010A1 (en) * 2009-06-30 2010-12-30 Brian Choi Seasoning plasma processing systems
JP5397215B2 (ja) * 2009-12-25 2014-01-22 ソニー株式会社 半導体製造装置、半導体装置の製造方法、シミュレーション装置及びシミュレーションプログラム
JP6078419B2 (ja) * 2013-02-12 2017-02-08 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法、プラズマ処理方法及びプラズマ処理装置
US10386828B2 (en) 2015-12-17 2019-08-20 Lam Research Corporation Methods and apparatuses for etch profile matching by surface kinetic model optimization
US9792393B2 (en) 2016-02-08 2017-10-17 Lam Research Corporation Methods and apparatuses for etch profile optimization by reflectance spectra matching and surface kinetic model optimization
US10032681B2 (en) 2016-03-02 2018-07-24 Lam Research Corporation Etch metric sensitivity for endpoint detection
US10197908B2 (en) 2016-06-21 2019-02-05 Lam Research Corporation Photoresist design layout pattern proximity correction through fast edge placement error prediction via a physics-based etch profile modeling framework
KR102543349B1 (ko) * 2016-07-11 2023-06-30 삼성전자주식회사 플라즈마 모니터링 장치
US10730082B2 (en) * 2016-10-26 2020-08-04 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for differential in situ cleaning
US10254641B2 (en) 2016-12-01 2019-04-09 Lam Research Corporation Layout pattern proximity correction through fast edge placement error prediction
US10534257B2 (en) 2017-05-01 2020-01-14 Lam Research Corporation Layout pattern proximity correction through edge placement error prediction
JP6772117B2 (ja) 2017-08-23 2020-10-21 株式会社日立ハイテク エッチング方法およびエッチング装置
WO2019053836A1 (ja) 2017-09-14 2019-03-21 株式会社日立ハイテクノロジーズ プラズマ処理装置およびウェットクリーニング方法
US10134569B1 (en) * 2017-11-28 2018-11-20 Lam Research Corporation Method and apparatus for real-time monitoring of plasma chamber wall condition
US10572697B2 (en) 2018-04-06 2020-02-25 Lam Research Corporation Method of etch model calibration using optical scatterometry
US11921433B2 (en) 2018-04-10 2024-03-05 Lam Research Corporation Optical metrology in machine learning to characterize features
WO2019199697A1 (en) 2018-04-10 2019-10-17 Lam Research Corporation Resist and etch modeling
US10896833B2 (en) * 2018-05-09 2021-01-19 Applied Materials, Inc. Methods and apparatus for detecting an endpoint of a seasoning process
US10854433B2 (en) * 2018-11-30 2020-12-01 Applied Materials, Inc. In-situ real-time plasma chamber condition monitoring
US10977405B2 (en) 2019-01-29 2021-04-13 Lam Research Corporation Fill process optimization using feature scale modeling
KR102386601B1 (ko) 2019-04-22 2022-04-15 주식회사 히타치하이테크 플라스마 처리 방법 및 플라스마 처리 장치
JP7110492B2 (ja) 2020-06-16 2022-08-01 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
JP7523553B2 (ja) 2021-10-21 2024-07-26 株式会社日立ハイテク エッチング方法およびエッチング装置
US12581881B2 (en) 2022-03-07 2026-03-17 Hitachi High-Tech Corporation Plasma processing method
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JP3766991B2 (ja) * 1995-10-20 2006-04-19 株式会社日立製作所 プラズマ処理の終点検出方法及び装置、並びに本検出方法及び装置を用いた半導体製造方法及び装置
JPH1050662A (ja) 1996-07-29 1998-02-20 Hitachi Ltd 半導体製造方法及び装置及びそれを用いて製造された半導体素子
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KR19990065311A (ko) 1998-01-12 1999-08-05 윤종용 식각 종말점 감지방법
KR100515548B1 (ko) * 1999-05-18 2005-09-20 동경 엘렉트론 주식회사 에칭 종점 검출 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101604844B1 (ko) * 2009-12-16 2016-03-18 주성엔지니어링(주) 기판 처리 장치 및 이의 처리 방법

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US20070281478A1 (en) 2007-12-06
US20100288195A1 (en) 2010-11-18
JP4914119B2 (ja) 2012-04-11
US8900401B2 (en) 2014-12-02
US8038896B2 (en) 2011-10-18
JP2007324341A (ja) 2007-12-13
US20150020970A1 (en) 2015-01-22
TWI342046B (https=) 2011-05-11
TW200744129A (en) 2007-12-01
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