KR100778194B1 - 셀프-인터스티셜 응집 결함이 없는 초크랄스키 실리콘을제조하기 위한 방법 - Google Patents

셀프-인터스티셜 응집 결함이 없는 초크랄스키 실리콘을제조하기 위한 방법 Download PDF

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KR100778194B1
KR100778194B1 KR1020027003800A KR20027003800A KR100778194B1 KR 100778194 B1 KR100778194 B1 KR 100778194B1 KR 1020027003800 A KR1020027003800 A KR 1020027003800A KR 20027003800 A KR20027003800 A KR 20027003800A KR 100778194 B1 KR100778194 B1 KR 100778194B1
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KR20020042688A (ko
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루시아노 물레스태그노
제프리 엘. 리베르트
조세프 씨. 홀제르
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엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020027003800A 1999-09-23 2000-09-18 셀프-인터스티셜 응집 결함이 없는 초크랄스키 실리콘을제조하기 위한 방법 Expired - Fee Related KR100778194B1 (ko)

Applications Claiming Priority (4)

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US15572599P 1999-09-23 1999-09-23
US60/155,725 1999-09-23
US17547800P 2000-01-11 2000-01-11
US60/175,478 2000-01-11

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KR20020042688A KR20020042688A (ko) 2002-06-05
KR100778194B1 true KR100778194B1 (ko) 2007-11-27

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US (1) US6635587B1 (enExample)
EP (1) EP1222325B1 (enExample)
JP (1) JP4360770B2 (enExample)
KR (1) KR100778194B1 (enExample)
DE (1) DE60019780T2 (enExample)
TW (1) TW574449B (enExample)
WO (1) WO2001021865A1 (enExample)

Cited By (1)

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KR101168655B1 (ko) * 2007-12-28 2012-07-25 삼성코닝정밀소재 주식회사 Ｎ 타입 질화갈륨 웨이퍼의 광학 특성 향상 방법

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US7160385B2 (en) * 2003-02-20 2007-01-09 Sumitomo Mitsubishi Silicon Corporation Silicon wafer and method for manufacturing the same
US7105050B2 (en) 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US6858307B2 (en) 2000-11-03 2005-02-22 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
EP2295619B1 (en) 2001-01-26 2014-04-23 MEMC Electronic Materials, Inc. Process for producing Low Defect Density Silicon Having a Vacancy-Dominated Core Substantially Free of Oxidation Induced Stacking Faults
CN1327041C (zh) 2002-11-12 2007-07-18 Memc电子材料有限公司 用于生长单晶锭的拉晶机和方法
DE102007020006A1 (de) * 2007-04-27 2008-10-30 Freiberger Compound Materials Gmbh Vorrichtung und Verfahren zur Herstellung von poly- oder multikristallinem Silizium, dadurch hergestellter Masseblock (Ingot) sowie Wafer aus poly- oder multikristallinem Silizium, und Verwendung zur Herstellung von Solarzellen
FR3034108A1 (fr) 2015-03-24 2016-09-30 Soitec Silicon On Insulator Methode de reduction de defauts et fabrication de substrat
EP3346505B1 (en) * 2016-11-14 2025-09-03 Shin-Etsu Chemical Co., Ltd. Method for manufacturing high-photoelectric-conversion-efficiency solar cell
CN117393588A (zh) * 2023-10-12 2024-01-12 上海新昇半导体科技有限公司 单晶硅晶圆及其形成方法

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Publication number Priority date Publication date Assignee Title
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JP2003510800A (ja) 2003-03-18
EP1222325A1 (en) 2002-07-17
US6635587B1 (en) 2003-10-21
TW574449B (en) 2004-02-01
DE60019780T2 (de) 2005-10-06
JP4360770B2 (ja) 2009-11-11
KR20020042688A (ko) 2002-06-05
EP1222325B1 (en) 2005-04-27
WO2001021865A1 (en) 2001-03-29
DE60019780D1 (de) 2005-06-02

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