JP4360770B2 - 凝集自己格子間原子欠陥を含まないチョクラルスキーシリコンの製造方法 - Google Patents

凝集自己格子間原子欠陥を含まないチョクラルスキーシリコンの製造方法 Download PDF

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Publication number
JP4360770B2
JP4360770B2 JP2001525019A JP2001525019A JP4360770B2 JP 4360770 B2 JP4360770 B2 JP 4360770B2 JP 2001525019 A JP2001525019 A JP 2001525019A JP 2001525019 A JP2001525019 A JP 2001525019A JP 4360770 B2 JP4360770 B2 JP 4360770B2
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defects
wafer
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JP2003510800A (ja
JP2003510800A5 (enExample
Inventor
ルチアーノ・ムレスターニョ
ジェフリー・エル・リバート
ジョゼフ・シー・ホルザー
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SunEdison Inc
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MEMC Electronic Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2001525019A 1999-09-23 2000-09-18 凝集自己格子間原子欠陥を含まないチョクラルスキーシリコンの製造方法 Expired - Fee Related JP4360770B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US15572599P 1999-09-23 1999-09-23
US60/155,725 1999-09-23
US17547800P 2000-01-11 2000-01-11
US60/175,478 2000-01-11
PCT/US2000/025524 WO2001021865A1 (en) 1999-09-23 2000-09-18 Method for producing czochralski silicon free of agglomerated self-interstitial defects

Publications (3)

Publication Number Publication Date
JP2003510800A JP2003510800A (ja) 2003-03-18
JP2003510800A5 JP2003510800A5 (enExample) 2005-12-22
JP4360770B2 true JP4360770B2 (ja) 2009-11-11

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JP2001525019A Expired - Fee Related JP4360770B2 (ja) 1999-09-23 2000-09-18 凝集自己格子間原子欠陥を含まないチョクラルスキーシリコンの製造方法

Country Status (7)

Country Link
US (1) US6635587B1 (enExample)
EP (1) EP1222325B1 (enExample)
JP (1) JP4360770B2 (enExample)
KR (1) KR100778194B1 (enExample)
DE (1) DE60019780T2 (enExample)
TW (1) TW574449B (enExample)
WO (1) WO2001021865A1 (enExample)

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US7160385B2 (en) * 2003-02-20 2007-01-09 Sumitomo Mitsubishi Silicon Corporation Silicon wafer and method for manufacturing the same
US7105050B2 (en) 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US6858307B2 (en) 2000-11-03 2005-02-22 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
EP2295619B1 (en) 2001-01-26 2014-04-23 MEMC Electronic Materials, Inc. Process for producing Low Defect Density Silicon Having a Vacancy-Dominated Core Substantially Free of Oxidation Induced Stacking Faults
CN1327041C (zh) 2002-11-12 2007-07-18 Memc电子材料有限公司 用于生长单晶锭的拉晶机和方法
DE102007020006A1 (de) * 2007-04-27 2008-10-30 Freiberger Compound Materials Gmbh Vorrichtung und Verfahren zur Herstellung von poly- oder multikristallinem Silizium, dadurch hergestellter Masseblock (Ingot) sowie Wafer aus poly- oder multikristallinem Silizium, und Verwendung zur Herstellung von Solarzellen
KR101168655B1 (ko) * 2007-12-28 2012-07-25 삼성코닝정밀소재 주식회사 Ｎ 타입 질화갈륨 웨이퍼의 광학 특성 향상 방법
FR3034108A1 (fr) 2015-03-24 2016-09-30 Soitec Silicon On Insulator Methode de reduction de defauts et fabrication de substrat
EP3346505B1 (en) * 2016-11-14 2025-09-03 Shin-Etsu Chemical Co., Ltd. Method for manufacturing high-photoelectric-conversion-efficiency solar cell
CN117393588A (zh) * 2023-10-12 2024-01-12 上海新昇半导体科技有限公司 单晶硅晶圆及其形成方法

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Also Published As

Publication number Publication date
JP2003510800A (ja) 2003-03-18
EP1222325A1 (en) 2002-07-17
KR100778194B1 (ko) 2007-11-27
US6635587B1 (en) 2003-10-21
TW574449B (en) 2004-02-01
DE60019780T2 (de) 2005-10-06
KR20020042688A (ko) 2002-06-05
EP1222325B1 (en) 2005-04-27
WO2001021865A1 (en) 2001-03-29
DE60019780D1 (de) 2005-06-02

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