TW574449B - Method for producing Czochralski silicon free of agglomerated self-interstitial defects - Google Patents
Method for producing Czochralski silicon free of agglomerated self-interstitial defects Download PDFInfo
- Publication number
- TW574449B TW574449B TW89119618A TW89119618A TW574449B TW 574449 B TW574449 B TW 574449B TW 89119618 A TW89119618 A TW 89119618A TW 89119618 A TW89119618 A TW 89119618A TW 574449 B TW574449 B TW 574449B
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- Taiwan
- Prior art keywords
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Links
- 230000007547 defect Effects 0.000 title claims description 51
- 229910052710 silicon Inorganic materials 0.000 title claims description 26
- 239000010703 silicon Substances 0.000 title claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title description 5
- 238000000034 method Methods 0.000 claims description 82
- 238000010438 heat treatment Methods 0.000 claims description 49
- 238000001556 precipitation Methods 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 8
- 239000010410 layer Substances 0.000 claims description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 8
- 230000006641 stabilisation Effects 0.000 claims description 7
- 238000011105 stabilization Methods 0.000 claims description 7
- 150000002926 oxygen Chemical class 0.000 claims description 4
- 239000002244 precipitate Substances 0.000 claims description 4
- 239000002344 surface layer Substances 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 54
- 239000013078 crystal Substances 0.000 description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000005054 agglomeration Methods 0.000 description 4
- 239000004575 stone Substances 0.000 description 4
- 230000002776 aggregation Effects 0.000 description 3
- 230000002079 cooperative effect Effects 0.000 description 3
- 238000005034 decoration Methods 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000004151 rapid thermal annealing Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004581 coalescence Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 238000004971 IR microspectroscopy Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000006735 epoxidation reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000003325 tomography Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15572599P | 1999-09-23 | 1999-09-23 | |
| US17547800P | 2000-01-11 | 2000-01-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW574449B true TW574449B (en) | 2004-02-01 |
Family
ID=26852564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW89119618A TW574449B (en) | 1999-09-23 | 2000-10-12 | Method for producing Czochralski silicon free of agglomerated self-interstitial defects |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6635587B1 (enExample) |
| EP (1) | EP1222325B1 (enExample) |
| JP (1) | JP4360770B2 (enExample) |
| KR (1) | KR100778194B1 (enExample) |
| DE (1) | DE60019780T2 (enExample) |
| TW (1) | TW574449B (enExample) |
| WO (1) | WO2001021865A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7160385B2 (en) * | 2003-02-20 | 2007-01-09 | Sumitomo Mitsubishi Silicon Corporation | Silicon wafer and method for manufacturing the same |
| US7105050B2 (en) | 2000-11-03 | 2006-09-12 | Memc Electronic Materials, Inc. | Method for the production of low defect density silicon |
| US6858307B2 (en) | 2000-11-03 | 2005-02-22 | Memc Electronic Materials, Inc. | Method for the production of low defect density silicon |
| EP2295619B1 (en) | 2001-01-26 | 2014-04-23 | MEMC Electronic Materials, Inc. | Process for producing Low Defect Density Silicon Having a Vacancy-Dominated Core Substantially Free of Oxidation Induced Stacking Faults |
| CN1327041C (zh) | 2002-11-12 | 2007-07-18 | Memc电子材料有限公司 | 用于生长单晶锭的拉晶机和方法 |
| DE102007020006A1 (de) * | 2007-04-27 | 2008-10-30 | Freiberger Compound Materials Gmbh | Vorrichtung und Verfahren zur Herstellung von poly- oder multikristallinem Silizium, dadurch hergestellter Masseblock (Ingot) sowie Wafer aus poly- oder multikristallinem Silizium, und Verwendung zur Herstellung von Solarzellen |
| KR101168655B1 (ko) * | 2007-12-28 | 2012-07-25 | 삼성코닝정밀소재 주식회사 | Ｎ 타입 질화갈륨 웨이퍼의 광학 특성 향상 방법 |
| FR3034108A1 (fr) | 2015-03-24 | 2016-09-30 | Soitec Silicon On Insulator | Methode de reduction de defauts et fabrication de substrat |
| EP3346505B1 (en) * | 2016-11-14 | 2025-09-03 | Shin-Etsu Chemical Co., Ltd. | Method for manufacturing high-photoelectric-conversion-efficiency solar cell |
| CN117393588A (zh) * | 2023-10-12 | 2024-01-12 | 上海新昇半导体科技有限公司 | 单晶硅晶圆及其形成方法 |
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| JPS583375B2 (ja) | 1979-01-19 | 1983-01-21 | 超エル・エス・アイ技術研究組合 | シリコン単結晶ウエハ−の製造方法 |
| FR2460479A1 (fr) * | 1979-06-29 | 1981-01-23 | Ibm France | Procede de caracterisation de la teneur en oxygene des barreaux de silicium tires selon la methode czochralski |
| US4266986A (en) * | 1979-11-29 | 1981-05-12 | Bell Telephone Laboratories, Incorporated | Passivation of defects in laser annealed semiconductors |
| JPS5680139A (en) | 1979-12-05 | 1981-07-01 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
| US4437922A (en) | 1982-03-26 | 1984-03-20 | International Business Machines Corporation | Method for tailoring oxygen precipitate particle density and distribution silicon wafers |
| JPS59124136A (ja) * | 1982-12-28 | 1984-07-18 | Toshiba Corp | 半導体ウエハの処理方法 |
| US4548654A (en) | 1983-06-03 | 1985-10-22 | Motorola, Inc. | Surface denuding of silicon wafer |
| US4505759A (en) | 1983-12-19 | 1985-03-19 | Mara William C O | Method for making a conductive silicon substrate by heat treatment of oxygenated and lightly doped silicon single crystals |
| US4868133A (en) | 1988-02-11 | 1989-09-19 | Dns Electronic Materials, Inc. | Semiconductor wafer fabrication with improved control of internal gettering sites using RTA |
| US4851358A (en) | 1988-02-11 | 1989-07-25 | Dns Electronic Materials, Inc. | Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing |
| US4981549A (en) | 1988-02-23 | 1991-01-01 | Mitsubishi Kinzoku Kabushiki Kaisha | Method and apparatus for growing silicon crystals |
| US5264189A (en) | 1988-02-23 | 1993-11-23 | Mitsubishi Materials Corporation | Apparatus for growing silicon crystals |
| US4929564A (en) * | 1988-10-21 | 1990-05-29 | Nippon Mining Co., Ltd. | Method for producing compound semiconductor single crystals and method for producing compound semiconductor devices |
| JPH039078A (ja) | 1989-06-05 | 1991-01-16 | Komatsu Ltd | 斜板式ピストンモータ |
| IT1242014B (it) | 1990-11-15 | 1994-02-02 | Memc Electronic Materials | Procedimento per il trattamento di fette di silicio per ottenere in esse profili di precipitazione controllati per la produzione di componenti elettronici. |
| JP2613498B2 (ja) | 1991-03-15 | 1997-05-28 | 信越半導体株式会社 | Ｓｉ単結晶ウエーハの熱処理方法 |
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| US5401669A (en) | 1993-05-13 | 1995-03-28 | Memc Electronic Materials, Spa | Process for the preparation of silicon wafers having controlled distribution of oxygen precipitate nucleation centers |
| JPH0786289A (ja) | 1993-07-22 | 1995-03-31 | Toshiba Corp | 半導体シリコンウェハおよびその製造方法 |
| IT1280041B1 (it) | 1993-12-16 | 1997-12-29 | Wacker Chemitronic | Procedimento per il tiraggio di un monocristallo di silicio |
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| JP3285111B2 (ja) | 1994-12-05 | 2002-05-27 | 信越半導体株式会社 | 結晶欠陥の少ないシリコン単結晶の製造方法 |
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| KR100237829B1 (ko) | 1997-02-06 | 2000-01-15 | 윤종용 | 웨이퍼의 결함 분석방법 |
| US6045610A (en) | 1997-02-13 | 2000-04-04 | Samsung Electronics Co., Ltd. | Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance |
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| DE19711922A1 (de) | 1997-03-21 | 1998-09-24 | Wacker Siltronic Halbleitermat | Vorrichtung und Verfahren zum Ziehen eines Einkristalls |
| CN101070621B (zh) | 1997-04-09 | 2012-09-05 | Memc电子材料有限公司 | 低缺陷密度、理想氧沉淀的硅 |
| KR20010006202A (ko) | 1997-04-09 | 2001-01-26 | 헨넬리 헬렌 에프 | 저결함밀도, 이상적 산소침전 실리콘 |
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| TW429478B (en) | 1997-08-29 | 2001-04-11 | Toshiba Corp | Semiconductor device and method for manufacturing the same |
| JPH11150119A (ja) | 1997-11-14 | 1999-06-02 | Sumitomo Sitix Corp | シリコン半導体基板の熱処理方法とその装置 |
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| US6236104B1 (en) | 1998-09-02 | 2001-05-22 | Memc Electronic Materials, Inc. | Silicon on insulator structure from low defect density single crystal silicon |
| US6284384B1 (en) | 1998-12-09 | 2001-09-04 | Memc Electronic Materials, Inc. | Epitaxial silicon wafer with intrinsic gettering |
-
2000
- 2000-09-14 US US09/661,821 patent/US6635587B1/en not_active Expired - Fee Related
- 2000-09-18 DE DE60019780T patent/DE60019780T2/de not_active Expired - Lifetime
- 2000-09-18 KR KR1020027003800A patent/KR100778194B1/ko not_active Expired - Fee Related
- 2000-09-18 JP JP2001525019A patent/JP4360770B2/ja not_active Expired - Fee Related
- 2000-09-18 WO PCT/US2000/025524 patent/WO2001021865A1/en not_active Ceased
- 2000-09-18 EP EP00961957A patent/EP1222325B1/en not_active Expired - Lifetime
- 2000-10-12 TW TW89119618A patent/TW574449B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003510800A (ja) | 2003-03-18 |
| EP1222325A1 (en) | 2002-07-17 |
| KR100778194B1 (ko) | 2007-11-27 |
| US6635587B1 (en) | 2003-10-21 |
| DE60019780T2 (de) | 2005-10-06 |
| JP4360770B2 (ja) | 2009-11-11 |
| KR20020042688A (ko) | 2002-06-05 |
| EP1222325B1 (en) | 2005-04-27 |
| WO2001021865A1 (en) | 2001-03-29 |
| DE60019780D1 (de) | 2005-06-02 |
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| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |